Abstract: A ceiling fan and a structure thereof are provided. The structure includes a blade holder, a plurality of blades, and a plurality of positioning elements. The blade holder includes a holder body and a plurality of support platforms. The holder body has a plurality of first matching structures spaced apart from each other. Each of the support platforms includes a first positioning structure. Each of the blades has a second matching structure and a second positioning structure. The second matching structures can be guided by the first matching structures, so that each of the blades is disposed at an installation position on one of the support platforms along an oblique track. When each of the blades is located at the installation position, the first positioning structures and the second positioning structures abut against each other.

Abstract: Semiconductor devices and methods of forming the same are provided. In some embodiments, a method includes receiving a workpiece having a redistribution layer disposed over and electrically coupled to an interconnect structure. In some embodiments, the method further includes patterning the redistribution layer to form a recess between and separating a first conductive feature and a second conductive feature of the redistribution layer, where corners of the first conductive feature and the second conductive feature are defined adjacent to and on either side of the recess. The method further includes depositing a first dielectric layer over the first conductive feature, the second conductive feature, and within the recess. The method further includes depositing a nitride layer over the first dielectric layer. In some examples, the method further includes removing portions of the nitride layer disposed over the corners of the first conductive feature and the second conductive feature.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate, a channel layer, a barrier layer, a compound semiconductor layer, a gate electrode, and a stack of dielectric layers. The channel layer is disposed on the substrate. The barrier layer is disposed on the channel layer. The compound semiconductor layer is disposed on the barrier layer. The gate electrode is disposed on the compound semiconductor layer. The stack of dielectric layers is disposed on the gate electrode. The stack of dielectric layers includes layers having different etching rates.

Abstract: A sense amplifier circuit includes a sense amplifier, a switch and a temperature compensation circuit. The temperature compensation circuit provides a control signal having a positive temperature coefficient, based on which the switch provides reference impedance for temperature compensation. The sense amplifier includes a first input end coupled to a target bit and a second input end coupled to the switch. The sense amplifier outputs a sense amplifier signal based on the reference impedance and the impedance of the target bit.

Abstract: A display device includes: a substrate having display and non-display areas; a first conductive layer including first and second sub-conductive lines; a second conductive layer including third and fourth sub-conductive lines, wherein, in the display area, the first sub-conductive line and the third sub-conductive lines cross from a top view; and a third conductive layer including third conductive lines and corresponding to the non-display area; wherein, corresponding to the non-display area, a portion of a projection of the one of the third conductive lines is overlapped with a portion of a projection of the second sub-conductive line on the substrate, and another portion of the projection of the one of the third conductive lines is overlapped with a portion of a projection of the fourth sub-conductive line on the substrate.

Abstract: A semiconductor device may include a compound substrate and a 3-dimensional inductor structure. The compound substrate may include a front surface and a back surface. The 3-dimensional inductor structure may include a front conductive stack, a back conductive layer, and at least one through-hole structure. At least one portion of the front conductive stack may include a first conductive layer disposed on the front surface of the compound substrate, and a second conductive layer disposed on the first conductive layer. The second conductive layer has a thickness ranging between 30 micrometers and 400 micrometers. The back conductive layer is disposed on the back surface of the compound substrate. The at least one through-hole structure penetrates through the compound substrate, and electrically connects the front conductive stack to the back conductive layer.

Abstract: An electronic device including a bracket and an antenna is provided. The bracket includes first, second, third, and fourth surfaces. The antenna includes a radiator. The radiator includes first, second, third, and fourth portions. The first portion is located on the first surface and includes connected first and second sections. The second portion is located on the second surface and includes third, fourth, fifth, and sixth sections. The third section, the fourth section, and the fifth sections are bent and connected to form a U shape. The third portion is located on the third surface and is connected to the second section and the fourth section. The fourth portion is located on the fourth surface and is connected to the fifth section, the sixth section, and the third portion. The radiator is adapted to resonate at a low frequency band and a first high frequency band.

Abstract: The present disclosure is directed to methods for the formation of high-voltage nano-sheet transistors and low-voltage gate-all-around transistors on a common substrate. The method includes forming a fin structure with first and second nano-sheet layers on the substrate. The method also includes forming a gate structure having a first dielectric and a first gate electrode on the fin structure and removing portions of the fin structure not covered by the gate structure. The method further includes partially etching exposed surfaces of the first nano-sheet layers to form recessed portions of the first nano-sheet layers in the fin structure and forming a spacer structure on the recessed portions. In addition, the method includes replacing the first gate electrode with a second dielectric and a second gate electrode, and forming an epitaxial structure abutting the fin structure.

Abstract: This disclosure provides systems, methods and apparatus, including computer programs encoded on computer storage media, for switching a secondary cell to a primary cell. A user equipment (UE) monitors a first radio condition of the UE for beams of a primary cell and a second radio condition for beams of one or more secondary cells configured for the UE in carrier aggregation. The UE transmits a request to configure a candidate beam of at least one candidate secondary cell as a new primary cell in response to the first radio condition not satisfying a first threshold and the second radio condition for the at least one candidate secondary cell satisfying a second threshold. A base station determines to reconfigure at least one secondary cell as the new primary cell. The base station and the UE perform a handover of the UE to the new primary cell.

Abstract: A package structure including a semiconductor die, a redistribution circuit structure and an electronic device is provided. The semiconductor die is laterally encapsulated by an insulating encapsulation. The redistribution circuit structure is disposed on the semiconductor die and the insulating encapsulation. The redistribution circuit structure includes a colored dielectric layer, inter-dielectric layers and redistribution conductive layers embedded in the inter-dielectric layers. The electronic device is disposed over the colored dielectric layer and electrically connected to the redistribution circuit structure.

Abstract: The present disclosure describes a method for forming metallization layers that include a ruthenium metal liner and a cobalt metal fill. The method includes depositing a first dielectric on a substrate having a gate structure and source/drain (S/D) structures, forming an opening in the first dielectric to expose the S/D structures, and depositing a ruthenium metal on bottom and sidewall surfaces of the opening. The method further includes depositing a cobalt metal on the ruthenium metal to fill the opening, reflowing the cobalt metal, and planarizing the cobalt and ruthenium metals to form S/D conductive structures with a top surface coplanar with a top surface of the first dielectric.

Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.

Abstract: Various embodiments of the present application are directed towards a control gate layout to improve an etch process window for word lines. In some embodiments, an integrated chip comprises a memory array, an erase gate, a word line, and a control gate. The memory array comprises a plurality of cells in a plurality of rows and a plurality of columns. The erase gate and the word line are elongated in parallel along a row of the memory array. The control gate is elongated along the row and is between and borders the erase gate and the word line. Further, the control gate has a pad region protruding towards the erase gate and the word line. Because the pad region protrudes towards the erase gate and the word line, a width of the pad region is spread between word-line and erase-gate sides of the control gate.

Abstract: In some implementations, one or more semiconductor processing tools may form a metal cap on a metal gate. The one or more semiconductor processing tools may form one or more dielectric layers on the metal cap. The one or more semiconductor processing tools may form a recess to the metal cap within the one or more dielectric layers. The one or more semiconductor processing tools may perform a bottom-up deposition of metal material on the metal cap to form a metal plug within the recess and directly on the metal cap.

Abstract: A display panel includes a first substrate, pixel structures, a first common pad, a second substrate, a second common electrode, a display medium and a conductive particle. The pixel structures are disposed on an active area of the first substrate. The first common pad is disposed on a peripheral area of the first substrate, and is electrically connected to first common electrodes of the pixel structures. The second common electrode is disposed on the second substrate. The conductive particle is disposed on the first common pad, and is electrically connected to the first common pad and the second common electrode. The conductive particle includes a core and a conductive film disposed on a surface of the core, where the conductive film has a main portion and raised portions, and a film thickness of each of the raised portions is greater than a film thickness of the main portion.

Abstract: Disclosed are calibration techniques that can be implemented by a device that conducts biological tests. In certain embodiments, the device for testing a biological specimen includes a receiving mechanism to receive a carrier, a camera module arranged to capture imagery of the carrier, and a processor. Some examples of the processor can detect a calibration mode trigger. In calibration mode, the processor can divide the captured imagery into segments and selectively perform one or more calibration procedures for each segment. Then, the processor records a calibration result for each segment.

Abstract: Method and apparatus for constrained de-blocking filter are disclosed. One method receives input data related to a current block in a current picture at a video encoder side or a video bitstream corresponding to compressed data including the current block in the current picture at a video decoder side, and determines a first boundary associated with the current block, wherein the first boundary corresponds to one vertical boundary or one horizontal boundary of the current block. The method then applies de-blocking process to a reconstructed current block corresponding to the current block to result in a filtered-reconstructed current block, using a plurality of first reference samples at a same side of the first boundary, and replaces a first set of the first reference samples by one or more padding values. The method then generates a filtered decoded picture including the filtered-reconstructed current block.

Abstract: A transmitter includes a transmitter circuit, a calibration circuit, and a transmitter signal strength indicator circuit. The transmitter circuit is coupled to a power node to receive a supply voltage and transmits an output signal via an antenna. The calibration circuit senses a current of the power node when the transmitter circuit operates in a first frequency band and operates in a second frequency band to generate a signal having different values and generates a calibration signal according to the signals having the different values. The transmitter signal strength indicator circuit detects power of the output signal to generate a first detection signal, and generate a second detection signal according to the calibration signal and the first detection signal. The transmitter circuit adjusts the power of the output signal to be target power according to the second detection signal.

Abstract: Medical imaging equipment and a medical imaging method are provided. The medical imaging equipment includes medical equipment, a controller, and a head-mounted display. The medical equipment is configured to investigate a body portion and output a first image signal corresponding to the body portion. The first image signal has a first resolution. The controller is coupled to the medical equipment to receive the first image signal and convert the first resolution of the first image signal to a second image signal having a second resolution. The head-mounted display is coupled to the controller to display a display image of the second image signal. The head-mounted display has a direction line. When the head-mounted display faces the body portion, the display image and the body portion are located along to the direction line.

Abstract: A connector assembly that may be used to connect an upper circuit board to a lower circuit board is disclosed. The connector assembly includes a base, and a bracket mechanically fastened to the base. The connector assembly also has a handle rotatably coupled to the base. The connector assembly includes a link bar movably coupling the handle to the base. The connector assembly further includes a guiding feature mechanically coupled between the base and the bracket. The guiding feature is configured to direct relative motion between the base and the bracket. The link bar and the guiding feature are also configured to transfer an external force applied to the handle, the external force being transferred to the upper and lower circuit boards via the base and the bracket.