Patents by Inventor Chia-Wei Lee
Chia-Wei Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11972974Abstract: An IC structure includes a transistor, a source/drain contact, a metal oxide layer, a non-metal oxide layer, a barrier structure, and a via. The transistor includes a gate structure and source/drain regions on opposite sides of the gate structure. The source/drain contact is over one of the source/drain regions. The metal oxide layer is over the source/drain contact. The non-metal oxide layer is over the metal oxide layer. The barrier structure is over the source/drain contact. The barrier structure forms a first interface with the metal oxide layer and a second interface with the non-metal oxide layer, and the second interface is laterally offset from the first interface. The via extends through the non-metal oxide layer to the barrier structure.Type: GrantFiled: January 13, 2022Date of Patent: April 30, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Sung-Li Wang, Shuen-Shin Liang, Yu-Yun Peng, Fang-Wei Lee, Chia-Hung Chu, Mrunal Abhijith Khaderbad, Keng-Chu Lin
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Publication number: 20240132667Abstract: Provided is a polyamide foam molded body and method for manufacturing the same. The method includes performing polymerization with a monomer composition to form a polyamide terpolymer; mixing a supercritical carbon dioxide foaming agent and the polyamide terpolymer under a pressure to form a mixture; and releasing the pressure of the mixture to foam the polyamide terpolymer for forming the polyamide foam molded body. The monomer composition comprises 50 to 70 mole % of a caprolactam, 4 to 15 mole % of a polyetheramine, 4 to 15 mole % of a dicarboxylic acid and 15 to 30 mole % of a Nylon salt. The polyamide terpolymer includes a hard segment formed by the caprolactam, the dicarboxylic acid and the Nylon salt and a soft segment formed by the polyetheramine. The polyamide foam molded body exhibits excellent properties and is environmental-friendly.Type: ApplicationFiled: September 7, 2023Publication date: April 25, 2024Inventors: Yi-Huan Lee, Chia-Hsing Lin, Chia-Wei Lee
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Publication number: 20240133949Abstract: An outlier IC detection method includes acquiring first measured data of a first IC set, training the first measured data for establishing a training model, acquiring second measured data of a second IC set, generating predicted data of the second IC set by using the training model according to the second measured data, generating a bivariate dataset distribution of the second IC set according to the predicted data and the second measured data, acquiring a predetermined Mahalanobis distance on the bivariate dataset distribution of the second IC set, and identifying at least one outlier IC from the second IC set when at least one position of the at least one outlier IC on the bivariate dataset distribution is outside a range of the predetermined Mahalanobis distance.Type: ApplicationFiled: October 3, 2023Publication date: April 25, 2024Applicant: MEDIATEK INC.Inventors: Yu-Lin Yang, Chin-Wei Lin, Po-Chao Tsao, Tung-Hsing Lee, Chia-Jung Ni, Chi-Ming Lee, Yi-Ju Ting
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Patent number: 11966546Abstract: A display device includes a base layer, a touch sensing layer, a light guide module and a display panel. The touch sensing layer is disposed on the base layer. The light guide module is disposed on the touch sensing layer. The touch sensing layer is located between the light guide module and the display panel, and the touch sensing layer and one of the light guide module and the display panel have no adhesive material therebetween.Type: GrantFiled: August 19, 2021Date of Patent: April 23, 2024Assignee: E Ink Holdings Inc.Inventors: Chen-Cheng Lin, Chia-I Liu, Kun-Hsien Lee, Hung-Wei Tseng
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Patent number: 11955154Abstract: A sense amplifier circuit includes a sense amplifier, a switch and a temperature compensation circuit. The temperature compensation circuit provides a control signal having a positive temperature coefficient, based on which the switch provides reference impedance for temperature compensation. The sense amplifier includes a first input end coupled to a target bit and a second input end coupled to the switch. The sense amplifier outputs a sense amplifier signal based on the reference impedance and the impedance of the target bit.Type: GrantFiled: May 16, 2022Date of Patent: April 9, 2024Assignee: UNITED MICROELECTRONICS CORP.Inventors: Cheng-Tung Huang, Jen-Yu Wang, Po-Chun Yang, Yi-Ting Wu, Yung-Ching Hsieh, Jian-Jhong Chen, Chia-Wei Lee
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Patent number: 11955397Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate, a channel layer, a barrier layer, a compound semiconductor layer, a gate electrode, and a stack of dielectric layers. The channel layer is disposed on the substrate. The barrier layer is disposed on the channel layer. The compound semiconductor layer is disposed on the barrier layer. The gate electrode is disposed on the compound semiconductor layer. The stack of dielectric layers is disposed on the gate electrode. The stack of dielectric layers includes layers having different etching rates.Type: GrantFiled: November 9, 2020Date of Patent: April 9, 2024Assignee: Vanguard International Semiconductor CorporationInventors: Shin-Cheng Lin, Cheng-Wei Chou, Ting-En Hsieh, Yi-Han Huang, Kwang-Ming Lin, Yung-Fong Lin, Cheng-Tao Chou, Chi-Fu Lee, Chia-Lin Chen, Shu-Wen Chang
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Patent number: 11933809Abstract: The present application discloses an inertial sensor comprising a proof mass, an anchor, a flexible member and several sensing electrodes. The anchor is positioned on one side of the sensing, mass block in a first axis. The flexible member is connected to the anchor point and extends along the first axis towards the proof mass to connect the proof mass, in which the several sensing electrodes are provided. In this way, the present application can effectively solve the problems of high difficulty in the production and assembly of inertial sensors and poor product reliability thereof.Type: GrantFiled: April 6, 2022Date of Patent: March 19, 2024Assignee: SENSORTEK TECHNOLOGY CORP.Inventors: Shih-Wei Lee, Chia-Hao Lin, Shih-Hsiung Tseng, Kuan-Ju Tseng, Chao-Shiun Wang
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Publication number: 20240088650Abstract: In some aspects of the present disclosure, an electrostatic discharge (ESD) protection circuit is disclosed. In some aspects, the ESD protection circuit includes a first transistor coupled to a pad, a second transistor coupled between the first transistor and ground, a stack of transistors coupled to the first transistor, and an ESD clamp coupled between the stack of transistors and the ground.Type: ApplicationFiled: November 20, 2023Publication date: March 14, 2024Applicant: Taiwan Semiconductor Manufacturing Company Ltd.Inventors: Li-Wei Chu, Tao Yi Hung, Chia-Hui Chen, Wun-Jie Lin, Jam-Wem Lee
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Publication number: 20240088019Abstract: A connecting structure includes a first dielectric layer, a first connecting via in the first dielectric layer, a second connecting via in the first dielectric layer, and an isolation between the first connecting via and the second connecting via. The isolation separates the first and second connecting vias from each other. The first connecting via, the isolation and the second connecting via are line symmetrical about a central line perpendicular to a top surface of the first dielectric layer.Type: ApplicationFiled: January 11, 2023Publication date: March 14, 2024Inventors: CHIA CHEN LEE, CHIA-TIEN WU, SHIH-WEI PENG, KUAN YU CHEN
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Publication number: 20230343379Abstract: A sense amplifier circuit includes a sense amplifier, a switch and a temperature compensation circuit. The temperature compensation circuit provides a control signal having a positive temperature coefficient, based on which the switch provides reference impedance for temperature compensation. The sense amplifier includes a first input end coupled to a target bit and a second input end coupled to the switch. The sense amplifier outputs a sense amplifier signal based on the reference impedance and the impedance of the target bit.Type: ApplicationFiled: May 16, 2022Publication date: October 26, 2023Applicant: UNITED MICROELECTRONICS CORP.Inventors: Cheng-Tung Huang, Jen-Yu Wang, Po-Chun Yang, Yi-Ting Wu, Yung-Ching Hsieh, Jian-Jhong Chen, Chia-Wei Lee
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Patent number: 11776649Abstract: A method for generating a memory built-in self-test circuit includes steps of providing an editable file, wherein the editable file configured to be edited by a user to customize a memory test algorithm; performing a syntax parsing on the editable file to obtain the memory test data, wherein the memory test data being corresponding to the memory test algorithm; and generating the memory built-in self-test circuit based on the memory test data.Type: GrantFiled: April 11, 2022Date of Patent: October 3, 2023Assignee: ISTART-TEK INC.Inventor: Chia Wei Lee
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Publication number: 20230223093Abstract: A method for generating a memory built-in self-test circuit includes steps of providing an editable file, wherein the editable file configured to be edited by a user to customize a memory test algorithm; performing a syntax parsing on the editable file to obtain the memory test data, wherein the memory test data being corresponding to the memory test algorithm; and generating the memory built-in self-test circuit based on the memory test data.Type: ApplicationFiled: April 11, 2022Publication date: July 13, 2023Inventor: Chia Wei Lee
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Publication number: 20230223480Abstract: Some implementations described herein provide a semiconductor structure. The semiconductor structure includes a first terminal coupled to a substrate of the semiconductor structure. The first terminal comprises a tunneling layer formed on the substrate, a first conductive structure formed on the tunneling layer, and a dielectric structure formed on a top surface and on a first curved side surface of the first conductive structure. The semiconductor structure includes a second terminal coupled to the substrate. The second terminal comprises a second conductive structure formed on an isolation structure. The second conductive structure has a second curved side surface, and the dielectric structure is disposed between the first curved side surface and the second curved side surface.Type: ApplicationFiled: February 27, 2023Publication date: July 13, 2023Inventors: Yu-Chu LIN, Wen-Chih CHIANG, Chi-Chung JEN, Ming-Hong SU, Mei-Chen SU, Chia-Wei LEE, Kuan-Wei SU, Chia-Ming PAN
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Publication number: 20230064914Abstract: Some implementations described herein provide a semiconductor structure. The semiconductor structure includes a first terminal coupled to a substrate of the semiconductor structure. The first terminal comprises a tunneling layer formed on the substrate, a first conductive structure formed on the tunneling layer, and a dielectric structure formed on a top surface and on a first curved side surface of the first conductive structure. The semiconductor structure includes a second terminal coupled to the substrate. The second terminal comprises a second conductive structure formed on an isolation structure. The second conductive structure has a second curved side surface, and the dielectric structure is disposed between the first curved side surface and the second curved side surface.Type: ApplicationFiled: August 31, 2021Publication date: March 2, 2023Inventors: Yu-Chu LIN, Wen-Chih CHIANG, Chi-Chung JEN, Ming-Hong SU, Mei-Chen SU, Chia-Wei LEE, Kuan-Wei SU, Chia-Ming PAN
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Patent number: 11594645Abstract: Some implementations described herein provide a semiconductor structure. The semiconductor structure includes a first terminal coupled to a substrate of the semiconductor structure. The first terminal comprises a tunneling layer formed on the substrate, a first conductive structure formed on the tunneling layer, and a dielectric structure formed on a top surface and on a first curved side surface of the first conductive structure. The semiconductor structure includes a second terminal coupled to the substrate. The second terminal comprises a second conductive structure formed on an isolation structure. The second conductive structure has a second curved side surface, and the dielectric structure is disposed between the first curved side surface and the second curved side surface.Type: GrantFiled: August 31, 2021Date of Patent: February 28, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yu-Chu Lin, Wen-Chih Chiang, Chi-Chung Jen, Ming-Hong Su, Mei-Chen Su, Chia-Wei Lee, Kuan-Wei Su, Chia-Ming Pan
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Patent number: 11345590Abstract: A semiconductor sensor, comprising a gas-sensing device and an integrated circuit is provided. The gas-sensing device includes a substrate having a sensing area and an interconnection area in the vicinity of the sensing area, an inter-metal dielectric (IMD) layer formed above the substrate in the sensing area and in the interconnection area, and an interconnect structure formed in the interconnection area; further includes a sensing electrode, a second TiO2-patterned portion, and a second Pt-patterned portion on the second TiO2-patterned portion in the sensing area. The interconnect structure includes a tungsten layer buried in the IMD layer, wherein part of a top surface of the tungsten layer is exposed by at least a via. The interconnect structure further includes a platinum layer formed in said at least the via, a TiO2 layer formed on the IMD layer, a first TiO2-patterned portion and a first Pt-patterned portion.Type: GrantFiled: November 13, 2020Date of Patent: May 31, 2022Assignee: UNITED MICROELECTRONICS CORP.Inventors: Chih-Fan Hu, Chia-Wei Lee, Chang-Sheng Hsu, Weng-Yi Chen
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Patent number: 11169605Abstract: An operating method in a virtual environment through a wearable device is disclosed, wherein the wearable device has a motion sensor, the virtual environment has an operated object and a virtual device corresponding to the wearable device, the corresponding virtual device has a first operational data constraint, and the operated object has a second operational data constraint. The operating method comprises the following steps of: using the motion sensor to generate a motion sensed data; causing the corresponding virtual device to generate a derived data according to the motion sensed data, wherein the derived data indicates an interaction relationship between the virtual device and the operated object; and when the virtual device separated from the operated object under the interaction relationship, moving the operated object in accordance with the derived data.Type: GrantFiled: January 2, 2020Date of Patent: November 9, 2021Assignee: J-MEX INC.Inventors: Chin-Ting Chu, Chia-Wei Lee, Chih-Hung Hsu, Te-Hsi Chen, Chi-Hung Chen, Meng-Yu Lee
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Publication number: 20210061643Abstract: A semiconductor sensor, comprising a gas-sensing device and an integrated circuit is provided. The gas-sensing device includes a substrate having a sensing area and an interconnection area in the vicinity of the sensing area, an inter-metal dielectric (IMD) layer formed above the substrate in the sensing area and in the interconnection area, and an interconnect structure formed in the interconnection area; further includes a sensing electrode, a second TiO2-patterned portion, and a second Pt-patterned portion on the second TiO2-patterned portion in the sensing area. The interconnect structure includes a tungsten layer buried in the IMD layer, wherein part of a top surface of the tungsten layer is exposed by at least a via. The interconnect structure further includes a platinum layer formed in said at least the via, a TiO2 layer formed on the IMD layer, a first TiO2-patterned portion and a first Pt-patterned portion.Type: ApplicationFiled: November 13, 2020Publication date: March 4, 2021Inventors: Chih-Fan Hu, Chia-Wei Lee, Chang-Sheng Hsu, Weng-Yi Chen
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Patent number: 10870576Abstract: A semiconductor sensor, comprising a gas-sensing device and an integrated circuit is provided. The gas-sensing device includes a substrate having a sensing area and an interconnection area in the vicinity of the sensing area, an inter-metal dielectric (IMD) layer formed above the substrate in the sensing area and in the interconnection area, and an interconnect structure formed in the interconnection area; further includes a sensing electrode, a second TiO2-patterned portion, and a second Pt-patterned portion on the second TiO2-patterned portion in the sensing area. The interconnect structure includes a tungsten layer buried in the IMD layer, wherein part of a top surface of the tungsten layer is exposed by at least a via. The interconnect structure further includes a platinum layer formed in said at least the via, a TiO2 layer formed on the IMD layer, a first TiO2-patterned portion and a first Pt-patterned portion.Type: GrantFiled: March 19, 2020Date of Patent: December 22, 2020Assignee: UNITED MICROELECTRONICS CORP.Inventors: Chih-Fan Hu, Chia-Wei Lee, Chang-Sheng Hsu, Weng-Yi Chen
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Patent number: 10793426Abstract: A microelectromechanical system structure and a method for fabricating the same are provided. A method for fabricating a MEMS structure includes the following steps. A first substrate is provided, wherein a transistor, a first dielectric layer and an interconnection structure are formed thereon. A second substrate is provided, wherein a second dielectric layer and a thermal stability layer are formed on the second substrate. The first substrate is bonded to the second substrate, and the second substrate removed. A conductive layer is formed within the second dielectric layer and electrically connected to the interconnection structure. The thermal stability layer is located between the conductive layer and the interconnection structure. A growth temperature of a material of the thermal stability layer is higher than a growth temperature of a material of the conductive layer and a growth temperature of a material of the interconnection structure.Type: GrantFiled: August 21, 2018Date of Patent: October 6, 2020Assignee: UNITED MICROELECTRONICS CORP.Inventors: Chang-Sheng Hsu, Chih-Fan Hu, Chia-Wei Lee, En Chan Chen, Shih-Wei Li