Patents by Inventor Chia-Wei Lee
Chia-Wei Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20200218349Abstract: An operating method in a virtual environment through a wearable device is disclosed, wherein the wearable device has a motion sensor, the virtual environment has an operated object and a virtual device corresponding to the wearable device, the corresponding virtual device has a first operational data constraint, and the operated object has a second operational data constraint. The operating method comprises the following steps of: using the motion sensor to generate a motion sensed data; causing the corresponding virtual device to generate a derived data according to the motion sensed data, wherein the derived data indicates an interaction relationship between the virtual device and the operated object; and when the virtual device separated from the operated object under the interaction relationship, moving the operated object in accordance with the derived data.Type: ApplicationFiled: January 2, 2020Publication date: July 9, 2020Applicant: J-MEX Inc.Inventors: Chin-Ting Chu, Chia-Wei Lee, Chih-Hung Hsu, Te-Hsi Chen, Chi-Hung Chen, Meng-Yu Lee
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Publication number: 20200216304Abstract: A semiconductor sensor, comprising a gas-sensing device and an integrated circuit is provided. The gas-sensing device includes a substrate having a sensing area and an interconnection area in the vicinity of the sensing area, an inter-metal dielectric (IMD) layer formed above the substrate in the sensing area and in the interconnection area, and an interconnect structure formed in the interconnection area; further includes a sensing electrode, a second TiO2-patterned portion, and a second Pt-patterned portion on the second TiO2-patterned portion in the sensing area. The interconnect structure includes a tungsten layer buried in the IMD layer, wherein part of a top surface of the tungsten layer is exposed by at least a via. The interconnect structure further includes a platinum layer formed in said at least the via, a TiO2 layer formed on the IMD layer, a first TiO2-patterned portion and a first Pt-patterned portion.Type: ApplicationFiled: March 19, 2020Publication date: July 9, 2020Inventors: Chih-Fan Hu, Chia-Wei Lee, Chang-Sheng Hsu, Weng-Yi Chen
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Patent number: 10640368Abstract: A semiconductor sensor, comprising a gas-sensing device and an integrated circuit electrically connected to the gas-sensing device, is provided. The gas-sensing device includes a substrate having a sensing area and an interconnection area in the vicinity of the sensing area, an inter-metal dielectric (IMD) layer formed above the substrate in the sensing area and in the interconnection area, and an interconnect structure formed in the interconnection area. The interconnect structure includes a tungsten layer buried in the IMD layer, wherein part of a top surface of the tungsten layer is exposed by at least a via. The interconnect structure further includes a platinum layer formed in said at least the via, wherein the platinum (Pt) layer directly contacts the top surface of the tungsten layer.Type: GrantFiled: October 14, 2016Date of Patent: May 5, 2020Assignee: UNITED MICROELECTRONICS CORP.Inventors: Chih-Fan Hu, Chia-Wei Lee, Chang-Sheng Hsu, Weng-Yi Chen
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Patent number: 10408780Abstract: The present invention provides a structure of a gas sensor, comprising: a support, having a front side, a back side opposite to the front side, a cell region, and a peripheral region circling the cell region; a cavity, formed on the back side of the support in the cell region; a heater, disposed on the front side of the support covering the cavity; a sensing element, disposed on the heater; and a sealing layer, formed on the back side of the support covering inside the cavity.Type: GrantFiled: April 20, 2017Date of Patent: September 10, 2019Assignee: UNITED MICROELECTRONICS CORPORATIONInventors: Chia-Wei Lee, Chang-Sheng Hsu, Chih-Fan Hu, Chin-Jen Cheng, Chang Hsin Wu
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Publication number: 20180354783Abstract: A microelectromechanical system structure and a method for fabricating the same are provided. A method for fabricating a MEMS structure includes the following steps. A first substrate is provided, wherein a transistor, a first dielectric layer and an interconnection structure are formed thereon. A second substrate is provided, wherein a second dielectric layer and a thermal stability layer are formed on the second substrate. The first substrate is bonded to the second substrate, and the second substrate removed. A conductive layer is formed within the second dielectric layer and electrically connected to the interconnection structure. The thermal stability layer is located between the conductive layer and the interconnection structure. A growth temperature of a material of the thermal stability layer is higher than a growth temperature of a material of the conductive layer and a growth temperature of a material of the interconnection structure.Type: ApplicationFiled: August 21, 2018Publication date: December 13, 2018Applicant: United Microelectronics Corp.Inventors: Chang-Sheng Hsu, Chih-Fan Hu, Chia-Wei Lee, En Chan Chen, Shih-Wei Li
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Publication number: 20180306738Abstract: The present invention provides a structure of a gas sensor, comprising: a support, having a front side, a back side opposite to the front side, a cell region, and a peripheral region circling the cell region; a cavity, formed on the back side of the support in the cell region; a heater, disposed on the front side of the support covering the cavity; a sensing element, disposed on the heater; and a sealing layer, formed on the back side of the support covering inside the cavity.Type: ApplicationFiled: April 20, 2017Publication date: October 25, 2018Inventors: Chia-Wei LEE, Chang-Sheng HSU, Chih-Fan HU, Chin-Jen CHENG, Chang Hsin WU
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Patent number: 10087072Abstract: A microelectromechanical system structure and a method for fabricating the same are provided. A method for fabricating a MEMS structure includes the following steps. A first substrate is provided, wherein a transistor, a first dielectric layer and an interconnection structure are formed thereon. A second substrate is provided, wherein a second dielectric layer and a thermal stability layer are formed on the second substrate. The first substrate is bonded to the second substrate, and the second substrate removed. A conductive layer is formed within the second dielectric layer and electrically connected to the interconnection structure. The thermal stability layer is located between the conductive layer and the interconnection structure. A growth temperature of a material of the thermal stability layer is higher than a growth temperature of a material of the conductive layer and a growth temperature of a material of the interconnection structure.Type: GrantFiled: May 4, 2016Date of Patent: October 2, 2018Assignee: United Microelectronics Corp.Inventors: Chang-Sheng Hsu, Chih-Fan Hu, Chia-Wei Lee, En Chan Chen, Shih-Wei Li
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Patent number: 10083807Abstract: A key mechanism is disclosed. The key mechanism comprises a keycap, a dome support structure positioned relative to the keycap and defining an opening, an actuation mechanism coupled to the keycap, and a collapsible dome positioned in the opening of the dome support structure. The actuation mechanism is configured to movably support the keycap relative to the dome support structure. The dome comprises an upstop member configured to limit upward travel of the collapsible dome.Type: GrantFiled: May 24, 2016Date of Patent: September 25, 2018Assignee: APPLE INC.Inventors: Chia-Chi Wu, Zheng Gao, Ming Gavin Gao, Paul X. Wang, Alex J. Lehmann, Richard Xu, Kenneth M. Silz, Chia-Wei Lee
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Publication number: 20180057354Abstract: A semiconductor sensor, comprising a gas-sensing device and an integrated circuit electrically connected to the gas-sensing device, is provided. The gas-sensing device includes a substrate having a sensing area and an interconnection area in the vicinity of the sensing area, an inter-metal dielectric (IMD) layer formed above the substrate in the sensing area and in the interconnection area, and an interconnect structure formed in the interconnection area. The interconnect structure includes a tungsten layer buried in the IMD layer, wherein part of a top surface of the tungsten layer is exposed by at least a via. The interconnect structure further includes a platinum layer formed in said at least the via, wherein the platinum (Pt) layer directly contacts the top surface of the tungsten layer.Type: ApplicationFiled: October 14, 2016Publication date: March 1, 2018Inventors: Chih-Fan Hu, Chia-Wei Lee, Chang-Sheng Hsu, Weng-Yi Chen
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Publication number: 20170345589Abstract: A key mechanism is disclosed. The key mechanism comprises a keycap, a dome support structure positioned relative to the keycap and defining an opening, an actuation mechanism coupled to the keycap, and a collapsible dome positioned in the opening of the dome support structure. The actuation mechanism is configured to movably support the keycap relative to the dome support structure. The dome comprises an upstop member configured to limit upward travel of the collapsible dome.Type: ApplicationFiled: May 24, 2016Publication date: November 30, 2017Inventors: Chia-Chi Wu, Zheng Gao, Ming Gavin Gao, Paul X. Wang, Alex J. Lehmann, Richard Xu, Kenneth M. Silz, Chia-Wei Lee
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Publication number: 20170320727Abstract: A microelectromechanical system structure and a method for fabricating the same are provided. A method for fabricating a MEMS structure includes the following steps. A first substrate is provided, wherein a transistor, a first dielectric layer and an interconnection structure are formed thereon. A second substrate is provided, wherein a second dielectric layer and a thermal stability layer are formed on the second substrate. The first substrate is bonded to the second substrate, and the second substrate removed. A conductive layer is formed within the second dielectric layer and electrically connected to the interconnection structure. The thermal stability layer is located between the conductive layer and the interconnection structure. A growth temperature of a material of the thermal stability layer is higher than a growth temperature of a material of the conductive layer and a growth temperature of a material of the interconnection structure.Type: ApplicationFiled: May 4, 2016Publication date: November 9, 2017Inventors: Chang-Sheng Hsu, Chih-Fan Hu, Chia-Wei Lee, En Chan Chen, Shih-Wei Li
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Patent number: 8381589Abstract: The present invention proposes a single-axis-control-input gyroscope system having imperfection compensation, which comprises a gyroscope and a state observer. The gyroscope includes a mechanical structure, and the dynamic behavior of the mechanical structure is described with a plurality of system parameters and a plurality of dynamic equations. The system parameters include a mass of the gyroscope, two main-axis spring constants, a cross-axis spring constant, two main-axis damping coefficients, a cross-axis damping coefficient and an angular velocity. The mechanical imperfections cause the system parameters to deviate from the designed values and become unknown values. The gyroscope receives a single-axis control signal and outputs a plurality of gyroscopic system dynamics. The single-axis control signal includes at least two frequency signals. The state observer is coupled to the gyroscope to receive the gyroscopic system dynamics as the inputs thereof to feed back compensations to the state observer.Type: GrantFiled: June 23, 2010Date of Patent: February 26, 2013Assignee: National Chiao Tung UniversityInventors: Tsung-Lin Chen, Chien-Yu Chi, Chia-Wei Lee
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Patent number: 8371165Abstract: An MEMS gyroscope is disclosed, capable of computing the rotating angle of a DUT being attached thereto without the need to execute an off-line calibration process, of precluding the execution of an integration process, and of executing an on-line compensation process for the error introduced by the sensing circuit defect and by the mechanical structure defect of its gyroscope module. The disclosed MEMS gyroscope comprises: a gyroscope module, a sensing module coupled with the gyroscope module, and a control module couple with the gyroscope module and the sensing module, respectively. The control module receives the system dynamic of the gyroscope module sensed by the sensing module, and applies a gyroscope control method for controlling the gyroscope module and computing the rotating angle of the DUT. Moreover, the control module outputs a control signal including two extra frequency signals, to the gyroscope module, for driving the gyroscope module into operation.Type: GrantFiled: July 28, 2010Date of Patent: February 12, 2013Assignee: National Chiao Tung UniversityInventors: Tsung-Lin Chen, Chien-Yu Chi, Chia-Wei Lee
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Publication number: 20110314910Abstract: The present invention proposes a single-axis-control-input gyroscope system having imperfection compensation, which comprises a gyroscope and a state observer. The gyroscope includes a mechanical structure, and the dynamic behavior of the mechanical structure is described with a plurality of system parameters and a plurality of dynamic equations. The system parameters include a mass of the gyroscope, two main-axis spring constants, a cross-axis spring constant, two main-axis damping coefficients, a cross-axis damping coefficient and an angular velocity. The mechanical imperfections cause the system parameters to deviate from the designed values and become unknown values. The gyroscope receives a single-axis control signal and outputs a plurality of gyroscopic system dynamics. The single-axis control signal includes at least two frequency signals. The state observer is coupled to the gyroscope to receive the gyroscopic system dynamics as the inputs thereof to feed back compensations to the state observer.Type: ApplicationFiled: June 23, 2010Publication date: December 29, 2011Applicant: National Chiao Tung UniversityInventors: Tsung-Lin CHEN, Chien-Yu CHI, Chia-Wei LEE
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Publication number: 20110259100Abstract: An MEMS gyroscope is disclosed, capable of computing the rotating angle of a DUT being attached thereto without the need to execute an off-line calibration process, of precluding the execution of an integration process, and of executing an on-line compensation process for the error introduced by the sensing circuit defect and by the mechanical structure defect of its gyroscope module. The disclosed MEMS gyroscope comprises: a gyroscope module, a sensing module coupled with the gyroscope module, and a control module couple with the gyroscope module and the sensing module, respectively. The control module receives the system dynamic of the gyroscope module sensed by the sensing module, and applies a gyroscope control method for controlling the gyroscope module and computing the rotating angle of the DUT. Moreover, the control module outputs a control signal including two extra frequency signals, to the gyroscope module, for driving the gyroscope module into operation.Type: ApplicationFiled: July 28, 2010Publication date: October 27, 2011Inventors: Tsung-Lin CHEN, Chien-Yu Chi, Chia-Wei Lee
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Patent number: 7724504Abstract: There are a first stopper and a second stopper positioned on a main body of a satellite receiver. A cover having a block is coupled with the main body of the satellite receiver. The block of the cover is capable of sliding between the first stopper and the second stopper when the cover is coupled with the main body.Type: GrantFiled: November 30, 2005Date of Patent: May 25, 2010Assignee: Wistron NeWeb CorporationInventor: Chia-Wei Lee
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Publication number: 20070087685Abstract: There are a first stopper and a second stopper positioned on a main body of a satellite receiver. A cover having a block is coupled with the main body of the satellite receiver. The block of the cover is capable of sliding between the first stopper and the second stopper when the cover is coupled with the main body.Type: ApplicationFiled: November 30, 2005Publication date: April 19, 2007Inventor: Chia-Wei Lee