Abstract: A triple-band trigger tool for a tire-pressure monitoring system is disclosed. The tool body includes a 315 MHz transceiver circuit and a 315 MHz antenna electrically connected to each other, and the 315 MHz transceiver circuit is electrically connected to a control unit; the tool body also includes a 433 MHz transceiver circuit and a 433 MHz antenna electrically connected to each other, and the 433 MHz transceiver circuit is electrically connected to the control unit; the tool body also includes a Bluetooth transceiver circuit and a Bluetooth antenna electrically connected to each other, and the Bluetooth transceiver circuit is electrically connected to the control unit. Therefore, the triple-band trigger is able to perform a firmware programming operation on a TPMS sensor at 315 MHz, 434 MHz or Bluetooth frequency band.

Abstract: A resistive random access memory is provided. The resistive random access memory includes a bottom electrode, a metal oxide layer including a plurality of conductive filament regions formed on the bottom electrode, and a plurality of top electrodes formed on the metal oxide layer, corresponding to the respective conductive filament regions. Each of the conductive filament regions has a bottom portion and a top portion. The width of the bottom portion is greater than that of the top portion. The conductive filament regions include oxygen vacancies, and regions other than the conductive filament regions in the metal oxide layer are nitrogen-containing regions.

Abstract: A manufacturing method is provided. The method includes steps below. Forming bottom electrodes. Blanketly forming a resistance switching layer on the bottom electrodes. Forming a first insulating material layer on the resistance switching layer. Patterning the first insulating material layer to form insulating patterns. Conformally forming a channel layer having a plurality of channel regions on the resistance switching layer and the insulating patterns, wherein the plurality of channel regions are located on the resistance switching layer and cover opposite sides of the insulating patterns. Forming a second electrode material layer on the channel layer. Patterning the second electrode material layer to form top electrodes, each of the top electrodes is located in corresponding to one of the insulating patterns and covers at least two of the plurality of channel regions.

Abstract: A resistive random access memory (RRAM) device and a manufacturing method are provided. The RRAM device includes bottom electrodes, a resistance switching layer, insulating patterns, a channel layer and top electrodes. The resistance switching layer blanketly covers the bottom electrodes. The insulating patterns are disposed on the resistance layer and located in corresponding to locations of the bottom electrodes. The channel layer conformally covers the resistance switching layer and the insulating patterns. The channel layer has a plurality of channel regions. The channel regions are located on the resistance switching layer, and cover sidewalls of the insulating patterns. The top electrodes respectively cover at least two of the channel regions, and respectively located in corresponding to one of the insulating patterns, such that the at least two of the channel regions are located between one of the bottom electrodes and one of the top electrodes.

Abstract: A resistive memory device and a reliability enhancement method thereof are provided. The reliability enhancement method includes the following steps. A forming operation is performed on a plurality of memory cells. The formed memory cells are read to respectively obtain a plurality of formed currents. A reference current is set according to a statistic value of the formed currents. A setting operation is performed on the memory cells. A ratio between a set current of each of the memory cells and the reference current is calculated, and a physical status of each of the memory cells is judged according to the ratio. It is determined whether to perform a fix operation of each of the memory cells or not according to physical status.

Abstract: A triple-band trigger tool for a tire-pressure monitoring system is disclosed. The tool body includes a 315 MHz transceiver circuit and a 315 MHz antenna electrically connected to each other, and the 315 MHz transceiver circuit is electrically connected to a control unit; the tool body also includes a 433 MHz transceiver circuit and a 433 MHz antenna electrically connected to each other, and the 433 MHz transceiver circuit is electrically connected to the control unit; the tool body also includes a Bluetooth transceiver circuit and a Bluetooth antenna electrically connected to each other, and the Bluetooth transceiver circuit is electrically connected to the control unit. Therefore, the triple-band trigger is able to perform a firmware programming operation on a TPMS sensor at 315 MHz, 434 MHz or Bluetooth frequency band.

Abstract: A resistive memory device and a reliability enhancement method thereof are provided. The reliability enhancement method includes the following steps. A forming operation is performed on a plurality of memory cells. The formed memory cells are read to respectively obtain a plurality of formed currents. A reference current is set according to a statistic value of the formed currents. A setting operation is performed on the memory cells. A ratio between a set current of each of the memory cells and the reference current is calculated, and a physical status of each of the memory cells is judged according to the ratio. It is determined whether to perform a fix operation of each of the memory cells or not according to physical status.

Abstract: A resistive random access memory (RRAM) device and a manufacturing method are provided. The RRAM device includes bottom electrodes, a resistance switching layer, insulating patterns, a channel layer and top electrodes. The resistance switching layer blanketly covers the bottom electrodes. The insulating patterns are disposed on the resistance layer and located in corresponding to locations of the bottom electrodes. The channel layer conformally covers the resistance switching layer and the insulating patterns. The channel layer has a plurality of channel regions. The channel regions are located on the resistance switching layer, and cover sidewalls of the insulating patterns. The top electrodes respectively cover at least two of the channel regions, and respectively located in corresponding to one of the insulating patterns, such that the at least two of the channel regions are located between one of the bottom electrodes and one of the top electrodes.

Abstract: A resistive random access memory is provided. The resistive random access memory includes a bottom electrode, a metal oxide layer including a plurality of conductive filament regions formed on the bottom electrode, and a plurality of top electrodes formed on the metal oxide layer, corresponding to the respective conductive filament regions. Each of the conductive filament regions has a bottom portion and a top portion. The width of the bottom portion is greater than that of the top portion. The conductive filament regions include oxygen vacancies, and regions other than the conductive filament regions in the metal oxide layer are nitrogen-containing regions.

Abstract: The invention discloses a radio frequency (RF) matching device for a tire pressure sensor, which includes a system control unit, a RF control unit, a RF matching unit, and a multi-frequency antenna in order, wherein the RF matching unit includes a resonance portion, a filtering portion, and a matching portion in order, wherein the resonance unit is connected to the RF control unit to be adjusted to the required initial frequency and cut-off frequency of various frequency bands; the filter unit is connected between the resonance unit and the matching unit to suppress and eliminate noise and unwanted frequency-doubling signals; the matching unit allows the maximum power of the multi-frequency RF signal to be transferred to the multi-frequency antenna, so that the multi-frequency antenna can transmit multiple RF signals of different frequencies.

Abstract: A non-volatile memory and a reset method thereof are provided. The reset method includes: performing a first reset operation on a plurality of memory cells; recording a plurality of first verifying currents respectively corresponding to a plurality of first failure memory cells; performing a second reset operation on the first failure memory cells, and verifying second failure memory cells to obtain a plurality of second verifying currents; setting a first voltage modify flag according to a plurality of first ratios between the first verifying currents and the respectively corresponding second verifying currents; and adjusting a reset voltage for performing the first reset operation and the second reset operation according to the first voltage modify flag.

Abstract: The invention discloses a radio frequency (RF) matching device for a tire pressure sensor, which includes a system control unit, a RF control unit, a RF matching unit, and a multi-frequency antenna in order, wherein the RF matching unit includes a resonance portion, a filtering portion, and a matching portion in order, wherein the resonance unit is connected to the RF control unit to be adjusted to the required initial frequency and cut-off frequency of various frequency bands; the filter unit is connected between the resonance unit and the matching unit to suppress and eliminate noise and unwanted frequency-doubling signals; the matching unit allows the maximum power of the multi-frequency RF signal to be transferred to the multi-frequency antenna, so that the multi-frequency antenna can transmit multiple RF signals of different frequencies.

Abstract: A method for forming a resistive random access memory includes forming a layer stack, patterning the layer stack to form a plurality of stack structures, forming a protection layer along sidewalls of the plurality of stack structures, forming a first isolation structure between the plurality of stack structures, forming at least one recess in at least one stack structure to define a plurality of filament units, and forming a second isolation structure in the at least one recess. The layer stack includes a bottom electrode and a resistive switching layer on the bottom electrode.

Abstract: Provided is a semiconductor device and a method of manufacturing the same. The semiconductor device includes a plurality of stacked structures and a dielectric layer. The stacked structures are disposed on a substrate. The dielectric layer is disposed on the substrate, and covers the stacked structures. An air gap is located between two adjacent stacked structures, and a top end of the air gap is higher than a top end of each of the stacked structures.

Abstract: A semiconductor element and a manufacturing method of the same are provided. The semiconductor element includes a substrate, a plurality of doping strips, a memory material layer, a plurality of conductive damascene structures, and a dielectric structure. The doping strips are formed in the substrate. The memory material layer is formed on the substrate, and the memory material layer comprises a memory area located on two sides of the doping strips. The conductive damascene structures are formed on the memory material layer. The dielectric structure is formed on the doping strips and between the conductive damascene structures. The conductive damascene structures are extended in a direction perpendicular to a direction which the doping strips are extended in.

Abstract: Provided is a method for fabricating a semiconductor device including the following steps. A silicon-containing conductive layer is formed on a substrate. Then, a dielectric layer is formed around the silicon-containing conductive layer. A portion of the dielectric layer is removed to expose a first sidewall of the silicon-containing conductive layer. A shielding structure is formed on a partial surface of the silicon-containing conductive layer, and the shielding structure exposes at least the first sidewall. A metal layer is formed on the substrate to cover the silicon-containing conductive layer not covered by the shielding structure. A salicide process is performed to form a silicide layer.

Abstract: Provided is a method for fabricating a semiconductor device including the following steps. A silicon-containing conductive layer is formed on a substrate. Then, a dielectric layer is formed around the silicon-containing conductive layer. A portion of the dielectric layer is removed to expose a first sidewall of the silicon-containing conductive layer. A shielding structure is formed on a partial surface of the silicon-containing conductive layer, and the shielding structure exposes at least the first sidewall. A metal layer is formed on the substrate to cover the silicon-containing conductive layer not covered by the shielding structure. A salicide process is performed to form a silicide layer.

Abstract: A semiconductor element and a manufacturing method of the same are provided. The semiconductor element includes a substrate, a plurality of doping strips, a memory material layer, a plurality of conductive damascene structures, and a dielectric structure. The doping strips are formed in the substrate. The memory material layer is formed on the substrate, and the memory material layer comprises a memory area located on two sides of the doping strips. The conductive damascene structures are formed on the memory material layer. The dielectric structure is formed on the doping strips and between the conductive damascene structures. The conductive damascene structures are extended in a direction perpendicular to a direction which the doping strips are extended in.

Abstract: A system and method for unnecessary dynamic branch prediction elimination in a processor with a dynamic branch predictor, includes a branch distance generation module for generating a branch distance between two consecutive branch instructions, a branch distance table for storing the branch distance generated by the branch distance generation module, and a dynamic branch predictor enabling module for determining enable or disable the dynamic branch prediction by using the branch distances stored in the branch distance table for the next incoming instructions. Through the configuration of the system, the dynamic branch prediction is performed only for branch instruction, so as to save power consumption due to unnecessary dynamic branch predictions.

Abstract: The present invention provides a flow-control apparatus with a check function for controlling the flow resistance of a photoresist solution. The apparatus is connected to a photoresist supply device, the photoresist supply device comprising a tank for storing the photoresist solution, a pipe partially submerged in the photoresist solution in the tank to transport the photoresist solution, and a pump for drawing the photoresist solution from the tank. The apparatus comprises a housing and a sphere. The housing comprises a chamber, a top opening positioned at the top of the chamber, and a bottom opening positioned at the bottom of the chamber, wherein the top opening can be mated to an end of the pipe or to a bottom opening of another apparatus. The sphere is moveably set inside the chamber of the housing and increases the flow resistance of the photoresist solution.