Abstract: Structures and techniques introduced here enable the design and fabrication of photodetectors (PDs) and/or other electronic circuits using typical semiconductor device manufacturing technologies meanwhile reducing the adverse impacts on PDs' performance. Examples of the various structures and techniques introduced here include, but not limited to, a pre-PD homogeneous wafer bonding technique, a pre-PD heterogeneous wafer bonding technique, a post-PD wafer bonding technique, their combinations, and a number of mirror equipped PD structures. With the introduced structures and techniques, it is possible to implement PDs using typical direct growth material epitaxy technology while reducing the adverse impact of the defect layer at the material interface caused by lattice mismatch.

Abstract: A method includes forming a stacked structure of a plurality of first semiconductor layers and a plurality of second semiconductor layers alternately stacked in a first direction over a substrate, the first semiconductor layers being thicker than the second semiconductor layers. The method also includes patterning the stacked structure into a first fin structure and a second fin structure extending along a second direction substantially perpendicular to the first direction. The method further includes removing the first semiconductor layers of the first fin structure to form a plurality of nanowires. Each of the nanowires has a first height, there is a distance between two adjacent nanowires along the vertical direction, and the distance is greater than the first height. The method includes forming a first gate structure between the second semiconductor layers of the first fin structure.

Abstract: A driving mechanism is provided, including a housing, a hollow frame, a holder, and a driving assembly. The frame is fixed to the housing and has a stop surface. The holder is movably disposed in the housing for holding the optical element. The driving assembly is disposed in the housing to drive the holder and the optical element moving along the optical axis of the optical element relative to the frame. Specifically, the stop surface is parallel to the optical axis to contact the holder and restrict the holder in a limit position.

Abstract: A display panel able to receive full fingerprint impressions in a display area together with command touches, in addition to showing images, includes a substrate, scan lines, data lines, touch scan lines, touch lines, sub-pixels, and fingerprint sensing units. A method for driving such multifunctional touch display panel is also provided.

Abstract: A TFT substrate for a touch display panel of reduced thickness defines a display area and a surrounding non-display area. The TFT substrate includes a first conductive layer on the substrate and a second conductive layer on the first conductive layer. In the display area, the first conductive layer includes data lines and the second conductive layer includes common electrodes. Each common electrode extends as a strip along a first direction. Each data line extends along a second direction. The first direction intersects the second direction. Each data line crosses the common electrodes. Each data line functions as a touch driving electrode and each common electrode functions as a touch sensing electrode.

Abstract: A semiconductor device includes a first type region including a first conductivity type and a second type region including a second conductivity type. The semiconductor device includes a channel region extending between the first type region and the second type region. The semiconductor device includes a gate electrode surrounding at least some of the channel region. A first gate edge of the gate electrode is separated a first distance from a first type region edge of the first type region and a second gate edge of the gate electrode is separated a second distance from a second type region edge of the second type region. The first distance is less than the second distance.

Abstract: A self-luminescence display apparatus capable of detecting pressure of touches applied by a user, the apparatus includes a display panel having a plurality of conductive layers and a supporting frame. One of the conductive layers cooperates with the supporting frame to form a plurality of force sensing capacitors. When a touch is applied, the display panel deforms according to pressure applied, which cause the capacitances of the force sensing capacitors to alter. The change in capacitance value, corresponding to a position where the touch operation is applied, can be calculated.

Abstract: A method for fabricating a semiconductor structure is shown. A first gate of a first device and a second gate of a second device are formed over a semiconductor substrate. First LDD regions are formed in the substrate beside the first gate using the first gate as a mask. A conformal layer is formed covering the first gate, the second gate and the substrate, wherein the conformal layer has sidewall portions on sidewalls of the second gate. Second LDD regions are formed in the substrate beside the second gate using the second gate and the sidewall portions of the conformal layer as a mask.

Abstract: An integrated circuit for driving a display panel is provided. The integrated circuit includes a gamma mapping unit and a mura compensation unit. The gamma mapping unit is configured to receive a gray level of an image data, map the gray level to a gamma code according to at least one gamma table, and output the gamma code. The mura compensation unit is configured to receive the gamma code, and compensate the gamma code according to at least one de-mura table to generate a compensation result after the gamma mapping unit performs the step of mapping the gray level to the gamma code. The integrated circuit drives the display panel according to the compensation result. In addition, a method for driving a display panel is also provided.

Abstract: Vertical gate all around (VGAA) devices and methods of manufacture thereof are described. A method for manufacturing a VGAA device includes: exposing a top surface and sidewalls of a first portion of a protrusion extending from a doped region, wherein a second portion of the protrusion is surrounded by a gate stack; and enlarging the first portion of the protrusion using an epitaxial growth process.

Abstract: A touch display device includes a touch display module. The touch display module includes a TFT substrate, a color filtering substrate, and a liquid crystal layer encapsulated between the TFT substrate and the color filtering substrate. A first electrode layer is formed on a surface of the color filtering substrate facing the TFT substrate. A second electrode layer is formed on a surface of the TFT substrate facing the color filtering substrate. The touch display device further includes at least one supporting element on a side of the touch display module. The supporting element is elastic and configured for elastically resisting against the touch display module.

Abstract: A display panel able to receive full fingerprint impressions in a display area together with command touches, in addition to showing images, includes a substrate, scan lines, data lines, touch scan lines, touch lines, sub-pixels, and fingerprint sensing units. A method for driving such multifunctional touch display panel is also provided.

Abstract: A device includes a substrate, a stacked structure and a first gate stack. The stacked structure includes a plurality of first semiconductor layers and a plurality of second semiconductor layers alternately stacked over the substrate. One of the first semiconductor layers has a height greater than a height of one the second semiconductor layers. The first gate stack wraps around the stacked structure.

Abstract: A thin film transistor array substrate in a touch display panel having reinforced common voltage uniformity on sub-electrodes therein includes a common electrode layer, a driving circuit, a controlling switch, a plurality of first lines, at least one second line, and at least one third line. The common electrode layer includes the spaced sub-electrodes. Each sub-electrode uses a first line electrically connect to the driving circuit and the controlling switch. The at least one second line is electrically connected to the driving circuit and the controlling switch, and when the controlling switch is turned on, the second line is electrically connected to the first lines, the driving circuit thus applying a common voltage to the sub-electrodes. A touch display panel using the thin film transistor array substrate is also provided.

Abstract: The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device may include a substrate; a gate structure disposed on a first surface of the substrate and an interface layer formed on the second surface of the substrate. The interface layer may allow for a receptor to be placed on the interface layer to detect the presence of a biomolecule or bio-entity.

Abstract: A multi-gate semiconductor device having a fin element, a gate structure over the fin element, an epitaxial source/drain feature adjacent the fin element; a dielectric spacer interposing the gate structure and the epitaxial source/drain feature.

Abstract: A touch display panel includes a first sensing matrix and a second sensing matrix. The first sensing matrix includes a plurality of grid units and a first switch unit. The grid units are arranged in matrix, wherein each grid unit includes at least one first electrode. The first switch unit includes a plurality of switches, and the switches are disposed between adjacent grid units. Wherein, the control end of the switches is configured to receive a first controlling signal, and one end of each of the switches is configured to output a sensing signal. The second sensing matrix includes at least one second electrode, and is configured to receive a common signal. The second sensing matrix includes a plurality of opening units, and each opening unit overlaps with the open area of each pixel circuit in a vertical projection direction of the first substrate.

Abstract: Vertical gate all around (VGAA) devices and methods of manufacture thereof are described. A method for manufacturing a VGAA device includes: exposing a top surface and sidewalls of a first portion of a protrusion extending from a doped region, wherein a second portion of the protrusion is surrounded by a gate stack; and enlarging the first portion of the protrusion using an epitaxial growth process.

Abstract: Some embodiments of the present disclosure relate to a processing tool. The tool includes a housing enclosing a processing chamber, and an input/output port configured to pass a wafer through the housing into and out of the processing chamber. A back-side macro-inspection system is arranged within the processing chamber and is configured to image a back side of the wafer. A front-side macro-inspection system is arranged within the processing chamber and is configured to image a front side of the wafer according to a first image resolution. A front-side micro-inspection system is arranged within the processing chamber and is configured to image the front side of the wafer according to a second image resolution which is higher than the first image resolution.

Abstract: A touch display panel which includes an integral fingerprint recognition portion also comprises a central processor, a switch module, and a main touch portion. The fingerprint recognition portion comprises fingerprint recognition electrodes connected to the central processor. The main touch portion comprises touch electrodes to sense touches. At least one touch electrode is electrically connected to one fingerprint recognition electrode through the switch module, and the switch module is controlled by the processor to cycle through connected or disconnected states between the touch electrode and the fingerprint recognition electrode.