Abstract: A semiconductor device includes a source/drain feature over a semiconductor substrate, channel layers connected to the source/drain feature, a gate structure between adjacent channel layers and wrapping the channel layers, and an inner spacer between the source/drain feature and the gate structure and between adjacent channel layers. The source/drain feature has a first interface with a first channel layer of the channel layer. The first interface has a convex profile protruding towards the first channel layer.

Abstract: A device comprises a plurality of 2D semiconductor nanostructures, a gate structure, a source region, and a drain region. The plurality of 2D semiconductor nanostructures extend in a first direction above a substrate and arranged in a second direction substantially perpendicular to the first direction. The gate structure surrounds each of the plurality of 2D semiconductor nanostructures. The source region and the drain region are respectively on opposite sides of the gate structure.

Abstract: A circuit board structure includes a redistribution structure layer, a build-up circuit structure layer, and a connection structure layer. The redistribution structure layer has a first and second surface, and includes an inner and outer dielectric layer, first connecting pads, and chip pads. A bottom surface of each first connecting pad is aligned with the first surface, and the chip pads are protruded from and located on the second surface. The build-up circuit structure layer includes second connecting pads. The connection structure layer is disposed between the redistribution structure layer and the build-up circuit structure layer and includes a substrate and conductive paste pillars penetrating the substrate. The first connecting pads are electrically connected to the second connecting pads via the conductive paste pillars, respectively. A top surface of each conductive paste pillar is aligned with the first surface of the redistribution structure layer.

Abstract: A semiconductor device includes a semiconductor layered structure, an electrode unit, and an anti-adsorption layer. The electrode unit is disposed on an electrode connecting region of the semiconductor layered structure, and is a multi-layered structure. The anti-adsorption layer is disposed on a top surface of the electrode unit opposite to the semiconductor layered structure. Also disclosed herein is a light-emitting system including the semiconductor device.

Abstract: A package structure includes a redistribution layer, a chip assembly, a plurality of solder balls, and a molding compound. The redistribution layer includes redistribution circuits, photoimageable dielectric layers, conductive through holes, and chip pads. One of the photoimageable dielectric layers located on opposite two outermost sides has an upper surface and openings. The chip pads are located on the upper surface and are electrically connected to the redistribution circuits through the conductive through holes. The openings expose portions of the redistribution circuits to define solder ball pads. Line widths and line spacings of the redistribution circuits decrease in a direction from the solder ball pads towards the chip pads. The chip assembly is disposed on the chip pads and includes at least two chips with different sizes. The solder balls are disposed on the solder ball pads, and the molding compound at least covers the chip assembly.

Abstract: A package structure includes at least one first redistribution layer, at least one second redistribution layer, a chip pad, a solder ball pad, a chip, a solder ball, and a molding compound. The first redistribution layer includes a first dielectric layer and a first redistribution circuit that fills a first opening and a second opening of the first dielectric layer. The first dielectric layer is aligned with the first redistribution circuit. The second redistribution layer includes a second and a third dielectric layers and a second redistribution circuit. The third dielectric layer is aligned with the second redistribution circuit. The chip pad and the solder ball pad are electrically connected to the first and the second redistribution circuits respectively. The chip and the solder ball are disposed on the chip pad and the solder ball pad respectively. The molding compound at least covers the chip and the chip pad.

Abstract: A package carrier includes a first redistribution layer having a first upper surface and a first lower surface and including a plurality of first redistribution circuits, a plurality of conductive through holes, a plurality of photoimageable dielectric layers, and a plurality of chip pads and a second redistribution layer disposed on the first upper surface of the first redistribution layer. The second redistribution layer has a second upper surface and a second lower surface aligned with and directly connected to the first upper surface of the first redistribution layer and includes a plurality of second redistribution circuits, a plurality of conductive structures, a plurality of Ajinomoto build-up Film (ABF) layers, and a plurality of solder ball pads. A line width and a line pitch of each of the first redistribution circuits are smaller than a line width and a line pitch of each of the second redistribution circuits.

Abstract: An IC structure comprises a first transistor formed on a substrate, a first interconnect structure over the first transistor, a dielectric layer over the first interconnect structure, a plurality of 2D semiconductor islands on the dielectric layer, and a plurality of second transistors formed on the plurality of 2D semiconductor islands.

Abstract: A semiconductor device includes a semiconductor layered structure, an electrode unit, and an anti-adsorption layer. The electrode unit is disposed on an electrode connecting region of the semiconductor layered structure. The anti-adsorption layer is disposed on a top surface of the electrode unit opposite to the semiconductor layered structure and is electrically connected to the electrode unit. The anti-adsorption layer has an adsorption capacity for at least one of gaseous contaminants and particulate contaminants which is lower than that of the electrode unit. Also disclosed herein is a light-emitting system including the semiconductor device.

Abstract: A circuit board structure includes a first sub-board including a plurality of circuit patterns, a second sub-board including a plurality of pads, and a connecting structure layer having a plurality of through holes and including an insulating layer, first and second adhesive layers, and a plurality of conductive blocks. The first adhesive layer is directly connected to the first sub-board. The second adhesive layer is directly connected to the second sub-board. The through holes penetrate through the first adhesive layer, the insulating layer, and the second adhesive layer. The conductive blocks are located in the through holes. An upper surface and a lower surface of each conductive block are respectively lower than a first surface of the first adhesive layer and a second surface of the second adhesive layer relatively away from the insulating layer. Each circuit pattern contacts the upper surface, and each pad contacts the lower surface.

Abstract: A memory device and a manufacturing method thereof are provided. The memory device includes a magnetic tunneling junction (MTJ) and a spin Hall electrode (SHE). The MTJ includes a free layer, a reference layer and a barrier layer lying between the free layer and the reference layer. The SHE is in contact with the MTJ, and configured to convert a charge current to a spin current for programming the MTJ. The SHE is formed of an alloy comprising at least one heavy metal element and at least one light transition metal element. The heavy metal element is selected from metal elements with one or more valence electrons filling in 5d orbitals, and the light transition metal element is selected from transition metal elements with one or more valence electrons partially filling in 3d orbitals.

Abstract: A chip packaging structure includes a chip, a redistribution layer, a solder ball, an encapsulant, and a stress buffer layer. The chip has an active surface and a back surface opposite to each other, and a peripheral surface connected to the active surface and the back surface. The redistribution layer is disposed on the active surface of the chip. The solder ball is disposed on the redistribution layer, and the chip is electrically connected to the solder ball through the redistribution layer. The encapsulant encapsulates the active surface and the back surface of the chip, the redistribution layer, and part of the solder ball. The stress buffer layer at least covers the peripheral surface of the chip. An outer surface of the stress buffer layer is aligned with a side surface of the encapsulant.

Abstract: A circuit board structure, including a redistribution circuit structure layer, a build-up circuit structure layer, and a connection structure layer, is provided. The redistribution circuit structure layer includes multiple first connecting pads. The build-up circuit structure layer is disposed on one side of the redistribution circuit structure layer and includes multiple second connecting pads. A line width and a line spacing of the redistribution circuit structure layer are smaller than a line width and a line spacing of the build-up circuit structure layer. The connection structure layer is disposed between the redistribution circuit structure layer and the build-up circuit structure layer, and includes a substrate and multiple conductive paste pillars penetrating the substrate. The first connecting pads are electrically connected to the second connecting pads respectively through the conductive paste pillars.

Abstract: An integrated circuit (IC) package structure includes a chip, a redistribution layer (RDL) structure, a molding compound structure and an electromagnetic interference (EMI) shielding structure. The RDL structure is formed on the chip and electrically connected thereto. The molding compound layer is provided on outer surfaces of the chip and the RDL structure. The EMI shielding structure is provided on outer surfaces of the molding compound structure. The molding compound structure layer provided on outer surfaces of the chip and the RDL structure provide protection and reinforcement to multiple faces of the IC package structure; and the EMI shielding structure provided on outer surfaces of the molding compound structure provides EMI protection to multiple faces of the chip and the RDL structure. The IC package structure has upgraded structural strength, reliability and stability in use. A method of manufacturing the above IC package structure is also introduced.