Abstract: A formulation comprising TML-6 or a pharmaceutically acceptable salt, solvate, hydrate, or prodrug thereof in an amorphous form, and one or more excipients,

Abstract: An electronic device used in the Universal Chiplet Interconnect Express (UCIe) standard is provided. The electronic device includes a substrate and first and second semiconductor devices. The first and second semiconductor devices are disposed on a top surface of the substrate. The substrate includes an interconnect structure electrically connected between the first and second semiconductor devices. The interconnect structure includes a first pad, a first signal trace and first and second via structures. The first pad is located on the top surface of the substrate. The first signal trace is covered by the first and second semiconductor devices. The first via structure is electrically connected between the first pad and the first signal trace. The second via structure is electrically connected between the first via structure and the first signal trace. The first via structure is misaligned with the second via structure.

Abstract: A memory device includes a stack, a first conductive pillar and a second conductive pillar, a channel material and a ferroelectric (FE) material. The stack includes alternating a plurality of conductive layers and a plurality of dielectric layers. The plurality of conductive layers each includes a bulk layer, and the bulk layer includes a first metal layer and a second metal layer connected to the first metal layer. The first conductive pillar and the second conductive pillar are through the stack and isolating each other. The channel material is disposed in the stack. The FE material is disposed between the channel material and the second metal layer. The FE material and the channel material are disposed between the second metal layer and the first conductive pillar, and between the second metal layer and the second conductive pillar.

Abstract: A method for configuring a plurality of memory units and a plurality of logic units in an integrated circuit includes providing a plurality of predefined parameters of the plurality of memory units, parsing the plurality of predefined parameters to generate a plurality of parsed parameters, compiling the plurality of memory units and the plurality of logic units at the same stage to generate a plurality of candidates of mapping results according to the plurality of parsed parameters, selecting a candidate of the mapping results from the plurality of candidates of the mapping results, and disposing the plurality of memory units and the plurality of logic units onto the integrated circuit according to the candidate of the mapping results.

Abstract: A method of manufacturing a memory cell includes the following steps. A channel material is formed to contact a source line and a bit line. A ferroelectric (FE) material is formed to contact the channel material. A word line is formed to contact the FE material. The FE material is disposed between the channel material and the word line. The word line includes a bulk layer. The bulk layer includes a first metal layer and a second metal layer. The second metal layer is sandwiched between the first metal layer and the FE material.

Abstract: A method for updating software comprises transmitting a first version of the software and a first decryption key to a computing system. The method further comprises generating a second version of the software and a second decryption key. The method further comprises encrypting the second version of the software and the second decryption key. The encrypted second version of the software is configured to be decrypted using the first decryption key and not the second decryption key. The method further comprises transmitting the encrypted second version of the software and the encrypted second decryption key to the computing system.

Abstract: A flash memory device includes a substrate, a semiconductor quantum well layer, a semiconductor spacer, a semiconductor channel layer, a gate structure, and source/drain regions. The semiconductor quantum well layer is formed of a first semiconductor material and is disposed over the substrate. The semiconductor spacer is formed of a second semiconductor material and is disposed over the first semiconductor channel layer. The semiconductor channel layer is formed of the first semiconductor material and is disposed over the semiconductor spacer. Thea gate structure is over the second semiconductor channel layer. The source/drain regions are over the substrate and are on opposite sides of the gate structure.

Abstract: The present disclosure describes a magnetic memory device. The magnetic memory device includes a magnetic sensing array configured to sense an external magnetic field strength. The magnetic memory device further includes a voltage modulator configured to, in response to the external magnetic field strength being greater than a threshold magnetic field strength, provide a test voltage different from a current write voltage of the magnetic memory device. The magnetic memory device further includes an error check array configured to use the test voltage as a write voltage of the error check array and provide a bit error rate corresponding to the test voltage. The magnetic memory device further includes a control unit configured to adjust, based on the bit error rate being equal to or less than a threshold bit error rate, a write voltage of the magnetic memory device from the current write voltage to the test voltage.

Abstract: An optical element driving mechanism is provided and includes a fixed assembly, a movable assembly, a driving assembly and a circuit assembly. The movable assembly is configured to connect an optical element, the movable assembly is movable relative to the fixed assembly, and the optical element has an optical axis. The driving assembly is configured to drive the movable assembly to move relative to the fixed assembly. The circuit assembly includes a plurality of circuits and is affixed to the fixed assembly.

Abstract: An electronic device includes a light guide plate, a plurality of light sources, a sealant frame and at least an optical film. The light guide plate includes a first end portion and a second end portion opposite to each other. The plurality of light sources are disposed adjacent to the second end portion and are arranged along the first direction. The sealant frame is disposed adjacent to the first end portion. One of the at least an optical film includes a body portion and a lug portion connected to the body portion, and the lug portion is fixed on the sealant frame. The body portion includes a first side adjacent to the sealant frame and, in a second direction, a shortest distance between the first side and the sealant film is in a range of 0 mm to 0.4 mm.

Abstract: A semiconductor package includes a first package having a first side and a second side opposing the first side. The first package comprises a first electronic component and a second electronic component arranged in a side-by-side manner on the second side. A second package is mounted on the first side of the first package. The second package comprises a radiative antenna element. A connector is disposed on the second side.

Abstract: An example method of two-stage voltage calibration upon power-up of a memory device comprises: identifying a set of memory pages that have been programmed within a time window; responsive to detecting a power up event, performing a first calibration operation with respect to the set of memory pages to determine a first value of a data state metric; identifying, among a plurality of voltage offset bins, a first voltage offset bin corresponding to the first value of the data state metric; storing, in a temporary metadata table, a first record associating the set of memory pages with the first voltage offset bin; performing a second calibration operation with respect to the set of memory pages to determine a second value of the data state metric, wherein a second accuracy of the second calibration operation exceeds a first accuracy of the first calibration operation; identifying, among a plurality of voltage offset bins, a second voltage offset bin corresponding to the second value of the data state metric; and

Abstract: Disclosed is a method of manufacturing a multi-porous biomass carbon material, comprising: a material preparation step of preparing a raw material mixture by evenly mixing a biomass carbon source and an oxidant at a stirring temperature; a reduction-oxidation step of heating the raw material mixture in an oxygen-deficient environment and making the raw material mixture undergo a reduction-oxidation reaction to obtain an original product; a first-pickling-drying step of pickling the original product to obtain a first-pickling product, performing a drying treatment thereon to obtain a dried product; a heat treatment step of heating the dried product at a heat treatment temperature in an oxygen-deficient thereby obtaining a volatile-component-removed product; and a second-pickling-drying step of making the second-pickling product become the multi-porous biomass carbon material.

Abstract: Transfer learning in machine learning can include receiving a machine learning model. Target domain training data for reprogramming the machine learning model using transfer learning can be received. The target domain training data can be transformed by performing a transformation function on the target domain training data. Output labels of the machine learning model can be mapped to target labels associated with the target domain training data. The transformation function can be trained by optimizing a parameter of the transformation function. The machine learning model can be reprogrammed based on input data transformed by the transformation function and a mapping of the output labels to target labels.

Abstract: A micro-electromechanical-system (MEMS) device may be formed to include an anti-stiction polysilicon layer on one or more moveable MEMS structures of a device wafer of the MEMS device to reduce, minimize, and/or eliminate stiction between the moveable MEMS structures and other components or structures of the MEMS device. The anti-stiction polysilicon layer may be formed such that a surface roughness of the anti-stiction polysilicon layer is greater than the surface roughness of a bonding polysilicon layer on the surfaces of the device wafer that are to be bonded to a circuitry wafer of the MEMS device. The higher surface roughness of the anti-stiction polysilicon layer may reduce the surface area of the bottom of the moveable MEMS structures, which may reduce the likelihood that the one or more moveable MEMS structures will become stuck to the other components or structures.

Abstract: A method includes depositing an etch stop layer over a first conductive feature, performing a first treatment to amorphize the etch stop layer, depositing a dielectric layer over the etch stop layer, etching the dielectric layer to form an opening, etching-through the etch stop layer to extend the opening into the etch stop layer, and filling the opening with a conductive material to form a second conductive feature.

Abstract: A flash memory device includes a substrate, a semiconductor quantum well layer, a semiconductor spacer, a semiconductor channel layer, a gate structure, and source/drain regions. The semiconductor quantum well layer is formed of a first semiconductor material and is disposed over the substrate. The semiconductor spacer is formed of a second semiconductor material and is disposed over the first semiconductor channel layer. The semiconductor channel layer is formed of the first semiconductor material and is disposed over the semiconductor spacer. Thea gate structure is over the second semiconductor channel layer. The source/drain regions are over the substrate and are on opposite sides of the gate structure.

Abstract: This document describes apparatuses and techniques enabling a scale down capture preview for a panorama capture user interface. This scale down preview enables users to more-easily and more-accurately capture images for a panorama.

Abstract: Techniques for a cloud-based workload optimization service to identify customer workloads that are optimized to run on burstable instance types. The techniques include identifying workloads that are successfully running on burstable instance types, and using historical-utilization data for those workloads to train classification models. The optimization service can extract feature data from the historical-utilization data, where the feature data represents utilization characteristics that are indicative of burstable workloads. The feature data is then used to train classification models to receive utilization data for candidate workloads, and determine whether the candidate workloads would be optimized for burstable instance types. The optimization service can then migrate suitable workloads to burstable instance types, and/or provide users with recommendations that their workloads are optimized or suitable for burstable instance types.

Abstract: The present disclosure describes a magnetic memory device. The magnetic memory device includes a magnetic sensing array configured to sense an external magnetic field strength. The magnetic memory device further includes a voltage modulator configured to, in response to the external magnetic field strength being greater than a threshold magnetic field strength, provide a test voltage different from a current write voltage of the magnetic memory device. The magnetic memory device further includes an error check array configured to use the test voltage as a write voltage of the error check array and provide a bit error rate corresponding to the test voltage. The magnetic memory device further includes a control unit configured to adjust, based on the bit error rate being equal to or less than a threshold bit error rate, a write voltage of the magnetic memory device from the current write voltage to the test voltage.