Abstract: An inspection method for a semiconductor device is disclosed. The method includes providing a semiconductor device, performing heat treatment on the semiconductor device, and inspecting the semiconductor device utilizing electron beam to acquire an analysis image. The semiconductor device comprises a substrate, a plurality of gate electrodes protruding on the substrate, a blanket dielectric layer overlying the substrate and gate electrodes, and a plurality of polycrystalline silicon plugs, respectively disposed on the substrate between the gate electrodes, in the dielectric layer. A piping defect is detected by the analysis image showing an area with voltage contrast difference.

Abstract: An inspection method for a semiconductor device is disclosed. The method includes providing a semiconductor device, performing heat treatment on the semiconductor device, and inspecting the semiconductor device utilizing electron beam to acquire an analysis image. The semiconductor device comprises a substrate, a plurality of gate electrodes protruding on the substrate, a blanket dielectric layer overlying the substrate and gate electrodes, and a plurality of polycrystalline silicon plugs, respectively disposed on the substrate between the gate electrodes, in the dielectric layer. A piping defect is detected by the analysis image showing an area with voltage contrast difference.

Abstract: A method of managing wafer defects includes inspecting each chip in a wafer to generate a unit of wafer defect raw data, using a server to integrate the unit of wafer defect raw data to generate a unit of wafer defect distribution data for recording positions, types, and sizes of defects, using the server to generate a corresponding drawing file according to the unit wafer defect distribution data to show all kinds of defect distributions, and transmitting the drawing file to a terminal such that terminal users can view the defect distributions without receiving the unit of wafer defect raw data.

Abstract: A plurality of cassettes, each having a plurality of wafers respectively having a first defect information, is selected. Each of the cassettes is then assigned to a corresponding tool having at least one reaction chamber, and the wafers are substantially equally assigned to the reaction chambers. A first process is then performed on each of the wafers in the reaction chamber. Finally, a first defect inspection process is performed on each of the wafers.