Abstract: A drive device for a height adjustable table includes a gear box, a plurality of first and second drive shafts and first and second shaft connectors, and a drive motor. The gear box includes a main gear, a worm screw meshing with the main gear, and a main drive shaft coaxially connected to and co-rotatable with the main gear. The first and second drive shafts are disposed at opposite sides of the main drive shaft. The first shaft connectors are connected among the first drive shafts and the main drive shaft. The second shaft connectors are connected among the second drive shafts and the main drive shaft. The drive motor is adapted to be disposed under a middle portion of a table body and is connected to the worm screw for driving the worm screw to rotate when energized.

Abstract: The present disclosure provides a semiconductor device including a first epitaxial stack and a first contact electrode. The first epitaxial stack includes a first semiconductor, a second semiconductor, and a first active region disposed between the first semiconductor structure and the second semiconductor structure. The first semiconductor structure includes a first capping layer having a first thickness. The second semiconductor structure includes a second capping layer having a second thickness larger than the first thickness. The first active region includes a light-emitting stack, a first confinement structure located between the light-emitting stack and the first capping layer, and a second confinement structure located between the light-emitting stack and the second capping layer. The first confinement structure has a third thickness, and the second confinement has a fourth thickness less than the third thickness.

Abstract: A light-emitting device includes a first nitride semiconductor structure; a stress relief structure on the first nitride semiconductor structure including a plurality of narrow band gap layers and a plurality of wide band gap layers alternately stacked, wherein one of the plurality of wide band gap layers includes a plurality of wide band gap sub-layers and one of the plurality of wide band gap sub-layers includes aluminum; an active structure on the stress relief structure including a plurality of quantum well layers and a plurality of barrier layers alternately stacked, wherein one of the plurality of barrier layers includes a plurality of barrier sub-layers and one of the plurality of barrier sub-layers includes aluminum, an aluminum composition of the wide band gap sub-layer is greater than or equal to that of the barrier sub-layer, and an average aluminum composition of the wide band gap layer is greater than that of the barrier layer; and an electron blocking structure on the active structure.

Abstract: The present invention provides a magnetic component. The magnetic component includes a magnetic core, at least one winding and at least one insulating and thermal-conducting element. The at least one winding is wound around the magnetic core. The at least one insulating and thermal-conducting element is configured to at least partially encapsulate or be attached and coupled to at least one of the magnetic core and the winding. The insulating and thermal-conducting element is served as a thermal bus path for transferring the heat generated by the magnetic core and/or the winding.

Abstract: Provided are a device security analyzation method and an electronic device. The method includes the following. In response to an external device being connected to the electronic device, the external device is maintained in an isolation status, and it is determined whether the external device meets a de-isolation condition. If the external device does not meet the de-isolation condition, in a time period of the external device being in the isolation status, a security analyzation is performed on the external device through a sandbox analyzation module. Also, it is determined whether to switch the external device to a connection status according to an execution result of the security analyzation.

Abstract: A light-emitting device includes a first nitride semiconductor structure; a stress relief structure on the first nitride semiconductor structure including a plurality of narrow band gap layers and a plurality of wide band gap layers alternately stacked, wherein one of the plurality of wide band gap layers includes a plurality of wide band gap sub-layers and one of the plurality of wide band gap sub-layers includes aluminum; an active structure on the stress relief structure including a plurality of quantum well layers and a plurality of barrier layers alternately stacked, wherein one of the plurality of barrier layers includes a plurality of barrier sub-layers and one of the plurality of barrier sub-layers includes aluminum, an aluminum composition of the wide band gap sub-layer is greater than or equal to that of the barrier sub-layer, and an average aluminum composition of the wide band gap layer is greater than that of the barrier layer; and an electron blocking structure on the active structure.

Abstract: A semiconductor device, includes: a first conductive type semiconductor region including a first semiconductor structure, wherein the first semiconductor structure includes one or more pairs of stack, the one or more pairs of stack respectively includes a first layer and a second layer, the first layer includes AlxGa1-xN, the second layer includes AlyGa1-yN, wherein 0?x<1, 0<y<1, x<y, wherein one of the one or more pairs of stack includes an interface region located between the first layer and the second layer adjacent to the first layer; a second conductive type semiconductor region located on the first conductive type semiconductor region; and an active region located between the first conductive type semiconductor region and the second conductive type semiconductor region; wherein the first semiconductor structure includes a first dopant having a first doping concentration with a peak value at the interface region.

Abstract: A semiconductor device comprises: a first semiconductor structure; a second semiconductor structure on the first semiconductor structure; an active region between the first semiconductor structure and the second semiconductor structure, wherein the active region comprises multiple alternating well layers and first barrier layers, wherein each of the first barrier layers has a band gap, the active region further comprises an upper surface facing the second semiconductor structure and a bottom surface opposite the upper surface; a first electron blocking layer between the second semiconductor structure and the active region, wherein the first electron blocking layer having a band gap greater than the band gap of one of the first barrier layers; a first aluminum-containing layer between the first electron blocking layer and the active region, wherein the first aluminum-containing layer has a first thickness and a band gap greater than the band gap of the first electron blocking layer; and a second aluminum-conta

Abstract: The method of forming the semiconductor device includes the following steps. An isolation structure is formed between a plurality of active areas. Semiconductor structures are formed over the active areas, and a portion of each semiconductor structure is embedded in the isolation structure. Sacrificial structures are formed on the semiconductor structures. An ion implantation process is performed to form implanted regions between the portions of the semiconductor structures embedded in the isolation structure. The sacrificial structures are removed to form patterned semiconductor structures. A dielectric structure is formed on the patterned semiconductor structure. A control structure is formed on the dielectric structure.

Abstract: A shelf and ladder combination includes two support rod units, partition plates connected between the support rod units, a cross bar, two main connecting brackets connecting the cross bar to the support rod units, and a ladder unit. The ladder unit includes two ladder legs, at least one fixing unit, and a plurality of rungs connected between the ladder legs. Each ladder leg has a first end portion adjacent to the crossbar, and a second end portion opposite to the first end portion. The at least one fixing unit is sleeved on the crossbar, is slidable along the crossbar, and is connected to the first end portion of one of the ladder legs.

Abstract: A stove includes a heating unit, an adjustment unit and a grill grate. The adjustment unit includes two lifting units, a synchronizer, and a drive unit. Each lifting unit has a screw rod, a sliding block movable along the screw rod, and a lift frame mounted to the sliding block. The synchronizer connects the lifting units. The drive unit is connected to the screw rod of one of the lifting units and is operable to drive synchronized rotation of the screw rods through the synchronizer. The grill grate is supported by the lift frames for moving between a first position, where the grill grate is proximate to the heating unit, and a second position, where the grill grate is distal from the heating unit.

Abstract: An inductor device includes a hollow magnetic core and at least one winding assembly. The winding assembly includes a plurality of conductive structures and U-shaped conductors, and the conductive structures are below the hollow magnetic core. The conductive structures are arranged along a segment of the hollow magnetic core, and the U-shaped conductors are across the hollow magnetic core and arranged along the segment of the hollow magnetic core. Two ends of at least one of the U-shaped conductor are respectively in contact with two of the conductive structures such that the U-shaped conductors and the conductive structures are electrically connected to each other and collectively continuously surround the segment of the hollow magnetic core.

Abstract: A semiconductor device comprises: a first semiconductor structure; a second semiconductor structure on the first semiconductor structure; an active region between the first semiconductor structure and the second semiconductor structure, wherein the active region comprises multiple alternating well layers and first barrier layers, wherein each of the first barrier layers has a band gap, the active region further comprises an upper surface facing the second semiconductor structure and a bottom surface opposite the upper surface; a first electron blocking layer between the second semiconductor structure and the active region, wherein the first electron blocking layer having a band gap greater than the band gap of one of the first barrier layers; a first aluminum-containing layer between the first electron blocking layer and the active region, wherein the first aluminum-containing layer has a first thickness and a band gap greater than the band gap of the first electron blocking layer; and a second aluminum-conta

Abstract: A light-emitting device includes a first nitride semiconductor structure; a stress relief structure on the first nitride semiconductor structure including a plurality of narrow band gap layers and a plurality of wide band gap layers alternately stacked, wherein one of the plurality of wide band gap layers includes a plurality of wide band gap sub-layers and one of the plurality of wide band gap sub-layers includes aluminum; an active structure on the stress relief structure including a plurality of quantum well layers and a plurality of barrier layers alternately stacked, wherein one of the plurality of barrier layers includes a plurality of barrier sub-layers and one of the plurality of barrier sub-layers includes aluminum, an aluminum composition of the wide band gap sub-layer is greater than or equal to that of the barrier sub-layer, and an average aluminum composition of the wide band gap layer is greater than that of the barrier layer; and an electron blocking structure on the active structure.

Abstract: A semiconductor device comprises: a first semiconductor structure; a second semiconductor structure on the first semiconductor structure; an active region, wherein the active region comprises multiple alternating well layers and barrier layers, the active region further comprises an upper surface facing the second semiconductor structure and a bottom surface opposite the upper surface; an electron blocking region between the second semiconductor structure and the active region; a first aluminum-containing layer between the electron blocking region and the active region, wherein the first aluminum-containing layer has a band gap greater than the band gap of the first electron blocking layer; and a p-type dopant above the bottom surface of the active region and comprising a concentration profile comprising a peak shape having a peak concentration value, wherein the peak concentration value lies at a distance of between 15 nm and 60 nm from the upper surface of the active region.

Abstract: A semiconductor device, includes: a first conductive type semiconductor region including a first semiconductor structure, wherein the first semiconductor structure includes one or more pairs of stack, the one or more pairs of stack respectively includes a first layer and a second layer, the first layer includes AlxGa1-xN, the second layer includes AlyGa1-yN, wherein 0?x<1, 0<y<1, x<y, wherein one of the one or more pairs of stack includes an interface region located between the first layer and the second layer adjacent to the first layer; a second conductive type semiconductor region located on the first conductive type semiconductor region; and an active region located between the first conductive type semiconductor region and the second conductive type semiconductor region; wherein the first semiconductor structure includes a first dopant having a first doping concentration with a peak value at the interface region.

Abstract: A common mode choke is provided, including a hollow ferrite core, a plurality of coils wound around the ferrite core, and a substrate. Each of the coils has a first end and a second end. The substrate is disposed on the side of the ferrite core and has a plurality of through holes. The first and second ends of the coils are engaged in the through holes. When viewed along the central axis of the ferrite core, the first and second ends of the coils are located on the outer side the ferrite core.

Abstract: A semiconductor device includes: a first semiconductor region; and a first electrode on the first semiconductor region; wherein first semiconductor region includes a first layer and a second layer, the second layer includes a first portion and a second portion adjacent to the first portion, the first portion has a first thickness, the second portion has a second thickness less than the first thickness, the first layer includes a first material and a first dopant, the first material includes multiple elements, the first dopant has a first concentration, the second layer includes a second material and a second dopant, the second material includes multiple elements, the second dopant has a second concentration, one of the elements of the first material of the first layer is different from the elements of the second material of the second layer.

Abstract: A lifting device includes a guide unit, a support unit and a lifting unit. The guide unit is extendable and retractable along a direction. The support unit is disposed in the guide unit and includes a securing connector fixed to a seat body and made of elastic material, a support tube connected to the securing connector, and a support member disposed on the support tube. The lifting unit includes a first rod-actuating screw member disposed on the support member and having a first threaded hole, and a threaded rod unit including a first threaded rod extending into the support tube and being threadedly engaged with the first threaded hole, such that the first threaded rod is rotatable by an external force and movable in the direction.