Abstract: The present invention relates to a three-dimensional package and a method of making the same. The method comprises: (a) providing a semiconductor body; (b) forming at least one blind hole in the semiconductor body; (c) forming an isolation layer on the side wall of the blind hole; (d) forming a conductive layer on the isolation layer; (e) patterning the conductive layer; (f) removing a part of the lower surface of the semiconductor body and a part of the isolation layer, so as to expose a part of the conductive layer; (g) forming a solder on the lower end of the conductive layer; (h) stacking a plurality of the semiconductor bodies, and performing a reflow process; and (i) cutting the stacked semiconductor bodies, so as to form a plurality of three-dimensional packages.

Abstract: The present invention relates to a three-dimensional package and a method of making the same. The method comprises: (a) providing a wafer; (b) forming at least one blind hole in the wafer; (c) forming an isolation layer on the side wall of the blind hole; (d) forming a conductive layer on the isolation layer; (e) forming a dry film on the conductive layer; (f) filling the blind hole with a solder; (g) removing the dry film; (h) patterning the conductive layer; (i) removing a part of the lower surface of the wafer and a part of the isolation layer, so as to expose a part of the conductive layer; (j) stacking a plurality of the wafers, and performing a reflow process; and (k) cutting the stacked wafers, so as to form a plurality of three-dimensional packages.

Abstract: The present invention relates to a three-dimensional package and a method of making the same. The three-dimensional package structure comprises a first wafer, at least one first hole, a first isolation layer, a first conductive layer, a first metal, a first solder, a second wafer, at least one second hole, a second isolation layer, a second conductive layer, a second metal and a second space. The first wafer has at least one first pad and a first protection layer exposing the first pad. The first hole penetrates the first wafer. The first isolation layer is disposed on the side wall of the first hole. The lower end of the first conductive layer extends below the surface of the first wafer. The first metal is disposed in the first hole, and is electrically connected to the first pad via the first conductive layer. The first solder is disposed on the first metal in the first hole, wherein the melting point of the first solder is lower than that of the first metal.

Abstract: A bumping process mainly comprises the following steps. Initially, a wafer having a plurality of bonding pads and a passivation layer with passivation openings exposing the bonding pads is provided. Next, a first dielectric layer with first openings and second openings is disposed on the wafer. The first openings and second openings expose the bonding pads and the portions of the passivation layer respectively. Afterwards, a patterned first electrically conductive layer is formed over the first dielectric layer and the bonding pads. Then a second dielectric layer is formed over the first dielectric layer and the patterned first electrically conductive layer and exposes the patterned first conductive layer through the second openings to form a plurality of bump pads wherein the bump pads are electrically connected to bonding pads. Next, a second electrically conductive layer is formed over the second dielectric layer and the bump pads.

Abstract: A multi-chips module package comprises a lead frame, a first chip, a second chip, a plurality of electrically conductive wires and an encapsulation. The lead frame has a plurality of first leads, second leads and chip pads connecting to the first leads. The first chip is placed on the lead frame and electrically connected to the lead frame through the bumps connecting the bump-bonding pads and the chip pads and the first leads; the second chip is placed over the first chip and electrically connected to the lead frame through the wires connecting the wire-bonding pads to the second leads; and the encapsulation covers the first chip, the second chip, the lead frame, and the wires. In such a manner, it not only reduces the distance of transmitting the electrical signals from chips to the outside but also it can save cost due to the lead frame manufactured by a simple manufacturing processes. In addition, a manufacturing method of the multi-chips module package is provided.

Abstract: The present invention relates to a multi-chip package structure, which comprises a first substrate, a first chip, a sub-package structure, a plurality of first solder balls, and a first molding compound. The first substrate has a first surface and a second surface. The first chip is electrically connected to the first surface of the first substrate. The sub-package structure comprises a second substrate, a second chip, and a second molding compound. The first solder balls are disposed between the first substrate and the second substrate and are used for connecting the first surface of the first substrate and the second surface of the second substrate so as to omit a step of wire bonding.

Abstract: A multi-chip package structure includes a first substrate, a first chip, a sub-package, and a first molding compound. The first substrate has a first surface and a second surface. The first chip is attached to the first surface of the first substrate by flip-chip bonding so as to reduce a step of wire bonding and reduce the total height of the package structure. The sub-package includes a second substrate, a second chip, and a second molding compound. The second substrate has a first surface and a second surface. The second substrate is a flexible substrate and is directly connected to the first surface of the first substrate so as to reduce another step of wire bonding.

Abstract: A multi-chips bumpless assembly package with a patterned conductive layer, a patterned dielectric layer and an insulation layer interposed between the chips is provided, which can shorten the distance of the electrical connection between the chips so as to upgrade the electrical performance of the assembly package and make the package thinner and thinner. Moreover, a manufacturing method thereof is also provided to form a package with high electrical performance.

Abstract: A thermal enhance multi-chips module (MCM) package mainly comprises a first package, a first carrier, a second package, a second carrier, an intermediate substrate and a cap-like heat spreader. The intermediate substrate has an opening. The first carrier and the second carrier are electrically connected to the first package and the second package respectively. The second package is accommodated in the opening and electrically connected to the first package via the first carrier, the second carrier and the intermediate carrier. The cap-like heat spreader has a supporting portion and an alignment portion wherein the supporting portion is connected to the alignment portion to define a cavity.

Abstract: A multi-chips bumpless assembly package with a patterned conductive layer, a patterned dielectric layer and an insulation layer interposed between the chips is provided, which can shorten the distance of the electrical connection between the chips so as to upgrade the electrical performance of the assembly package and make the package thinner and thinner. Moreover, a manufacturing method thereof is also provided to form a package with high electrical performance.

Abstract: A multi-chips module package comprises a lead frame, a first chip, a second chip, a plurality of electrically conductive wires and an encapsulation. The lead frame has a plurality of first leads, second leads and chip pads connecting to the first leads. The first chip is placed on the lead frame and electrically connected to the lead frame through the bumps connecting the bump-bonding pads and the chip pads and the first leads; the second chip is placed over the first chip and electrically connected to the lead frame through the wires connecting the wire-bonding pads to the second leads; and the encapsulation covers the first chip, the second chip, the lead frame, and the wires. In such a manner, it not only reduces the distance of transmitting the electrical signals from chips to the outside but also it can save cost due to the lead frame manufactured by a simple manufacturing processes. In addition, a manufacturing method of the multi-chips module package is provided.

Abstract: A bumping process mainly comprises the following steps. Initially, a wafer having a plurality of bonding pads and a passivation layer with passivation openings exposing the bonding pads is provided. Next, a first dielectric layer with first openings and second openings is disposed on the wafer. The first openings and second openings expose the bonding pads and the portions of the passivation layer respectively. Afterwards, a patterned first electrically conductive layer is formed over the first dielectric layer and the bonding pads. Then a second dielectric layer is formed over the first dielectric layer and the patterned first electrically conductive layer and exposes the patterned first conductive layer through the second openings to form a plurality of bump pads wherein the bump pads are electrically connected to bonding pads. Next, a second electrically conductive layer is formed over the second dielectric layer and the bump pads.

Abstract: A thermal enhance multi-chips module (MCM) package mainly comprises a first package, a first carrier, a second package, a second carrier, an intermediate substrate and a cap-like heat spreader. The intermediate substrate has an opening. The first carrier and the second carrier are electrically connected to the first package and the second package respectively. The second package is accommodated in the opening and electrically connected to the first package via the first carrier, the second carrier and the intermediate carrier. The cap-like heat spreader has a supporting portion and an alignment portion wherein the supporting portion is connected to the alignment portion to define a cavity.

Abstract: A thermal enhance MCM package mainly comprises a first chip, a second chip, a substrate and a thermally conductive device. The first chip and the second chip are electrically connected to the substrate, and the thermally conductive device is mounted on the substrate. The thermally conductive device is exposed to the outside so as to prevent the heat generated from the first chip and the second chip from being accumulated in the substrate and transmitted to the motherboard. Accordingly, the thermal performance of the MCM package will be upgraded.

Abstract: A semiconductor package with a thermal enhance film mainly comprises a substrate, a semiconductor chip and a thermal enhance film. The semiconductor chip is electrically connected to the substrate and the thermal enhance film is formed on the back surface of the semiconductor chip. Therein, the thermal enhance film can be regarded as a heat transmission layer to transmit the heat to the outside and upgrade the thermal efficiency of the semiconductor package. In addition, the thermal enhance film can be made of a material comprising polymer. For example, the thermal enhance film is a thermally conductive polymer layer and can be regarded as a buffer layer to prevent the active surface of the semiconductor chip from being chipped. Furthermore, a manufacturing method to manufacture the semiconductor package is provided.