Patents by Inventor Chiao-Chi Wang
Chiao-Chi Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11961866Abstract: A method of forming an image sensor includes forming a photodiode within a semiconductor substrate. The method further includes disposing an interconnect structure over the semiconductor substrate. The interconnect structure includes a contact etch stop layer (CESL) over the photodiode; and a plurality of dielectric layers over the CESL, wherein at least one dielectric layer of the plurality of dielectric layers comprises a low dielectric constant (low-k) material. The method further includes patterning at least the plurality of dielectric layers, wherein patterning at least the plurality of dielectric layers comprises defining an opening above an active region of the photodiode. The method further includes depositing a cap layer on sidewalls of the opening, wherein the cap layer includes a dielectric material having a higher moisture resistance than the low-k dielectric material.Type: GrantFiled: October 27, 2020Date of Patent: April 16, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chiao-Chi Wang, Chia-Ping Lai, Chung-Chuan Tseng
-
Patent number: 11894411Abstract: A method includes forming a plurality of openings extending into a substrate from a front surface of the substrate. The substrate includes a first semiconductor material. Each of the plurality of openings has a curve-based bottom surface. The method includes filling the plurality of openings with a second semiconductor material. The second semiconductor material is different from the first semiconductor material. The method includes forming a plurality of pixels that are configured to sense light in the plurality of openings, respectively, using the second semiconductor material.Type: GrantFiled: November 28, 2022Date of Patent: February 6, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Yeh-Hsun Fang, Chiao-Chi Wang, Chung-Chuan Tseng, Chia-Ping Lai
-
Publication number: 20230378234Abstract: A method includes forming a plurality of openings extending into a substrate from a front surface of the substrate. The substrate includes a first semiconductor material. Each of the plurality of openings has a curve-based bottom surface. The method includes filling the plurality of openings with a second semiconductor material. The second semiconductor material is different from the first semiconductor material. The method includes forming a plurality of pixels that are configured to sense light in the plurality of openings, respectively, using the second semiconductor material.Type: ApplicationFiled: August 4, 2023Publication date: November 23, 2023Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yeh-Hsun Fang, Chiao-Chi Wang, Chung-Chuan Tseng, Chia-Ping Lai
-
Publication number: 20230378218Abstract: Various embodiments of the present disclosure are directed towards methods for forming an image sensor in which a device layer overlies and has a different semiconductor material than a substrate and in which the device layer has high crystalline quality. Some embodiments of the methods include: epitaxially growing the device layer on the substrate; patterning the device layer to form a trench dividing the device layer into mesa structures corresponding to pixels; forming an inter-pixel dielectric layer filling the trench and separating the mesa structures; and forming photodetectors in the mesa structures. Other embodiments of the methods include: depositing the inter-pixel dielectric layer over the substrate; patterning the inter-pixel dielectric layer to form cavities corresponding to the pixels; epitaxially growing the mesa structures in the cavities; and forming the photodetectors in the mesa structures.Type: ApplicationFiled: August 8, 2023Publication date: November 23, 2023Inventors: Chiao-Chi Wang, Chung-Chuan Tseng, Chia-Ping Lai, Szu-Chien Tseng, Yeh-Hsun Fang
-
Publication number: 20230317743Abstract: A semiconductor device includes a first semiconductor structure and a second semiconductor structure. The first semiconductor structure includes silicon. The second semiconductor structure is embedded in the first semiconductor structure, in which the second semiconductor structure has at least one convex portion and at least one concave portion. The convex portion and the concave portion are on at least one edge of the second semiconductor structure, and a shape of the concave portion includes rectangle, trapezoid, inverted trapezoid, or parallelogram. The second semiconductor structure includes germanium, elements of group III or group V, or combinations thereof. The convex portion of the second semiconductor structure has a top surface substantially coplanar with a top surface of the first semiconductor structure.Type: ApplicationFiled: June 5, 2023Publication date: October 5, 2023Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Zong-Jie WU, Chiao-Chi WANG, Chung-Chuan TSENG, Chia-Ping LAI
-
Publication number: 20230246056Abstract: A semiconductor device with dummy and active pixel structures and a method of fabricating the same are disclosed. The semiconductor device includes a first pixel region with a first pixel structure, a second pixel region, surrounding the first pixel region, includes a second pixel structure adjacent to the first pixel structure and electrically isolated from the first pixel structure, and a contact pad region with a pad structure disposed adjacent to the second pixel region. The first pixel structure includes a first epitaxial structure disposed within a substrate and a first capping layer disposed on the first epitaxial structure. The second pixel structure includes a second epitaxial structure disposed within the substrate and a second capping layer disposed on the second epitaxial structure. Top surfaces of the first and second epitaxial structures are substantially coplanar with each other. The first and second epitaxial structures includes a same semiconductor material.Type: ApplicationFiled: April 10, 2023Publication date: August 3, 2023Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yu-Wei CHEN, Chung-Chuan Tseng, Chiao-Chi Wang, Chia-Ping Lai
-
Patent number: 11670650Abstract: A semiconductor device includes a first semiconductor structure and a second semiconductor structure. The first semiconductor structure includes silicon. The second semiconductor structure is embedded in the first semiconductor structure, in which the second semiconductor structure has at least one convex portion and at least one concave portion. The convex portion and the concave portion are on at least one edge of the second semiconductor structure, and a shape of the concave portion includes rectangle, trapezoid, inverted trapezoid, or parallelogram. The second semiconductor structure includes germanium, elements of group III or group V, or combinations thereof.Type: GrantFiled: June 5, 2020Date of Patent: June 6, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Zong-Jie Wu, Chiao-Chi Wang, Chung-Chuan Tseng, Chia-Ping Lai
-
Patent number: 11626444Abstract: A semiconductor device with dummy and active pixel structures and a method of fabricating the same are disclosed. The semiconductor device includes a first pixel region with a first pixel structure, a second pixel region, surrounding the first pixel region, includes a second pixel structure adjacent to the first pixel structure and electrically isolated from the first pixel structure, and a contact pad region with a pad structure disposed adjacent to the second pixel region. The first pixel structure includes a first epitaxial structure disposed within a substrate and a first capping layer disposed on the first epitaxial structure. The second pixel structure includes a second epitaxial structure disposed within the substrate and a second capping layer disposed on the second epitaxial structure. Top surfaces of the first and second epitaxial structures are substantially coplanar with each other. The first and second epitaxial structures includes a same semiconductor material.Type: GrantFiled: August 27, 2020Date of Patent: April 11, 2023Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yu-Wei Chen, Chung-Chuan Tseng, Chiao-Chi Wang, Chia-Ping Lai
-
Patent number: 11626442Abstract: Various embodiments of the present disclosure are directed towards methods for forming an image sensor in which a device layer overlies and has a different semiconductor material than a substrate and in which the device layer has high crystalline quality. Some embodiments of the methods include: epitaxially growing the device layer on the substrate; patterning the device layer to form a trench dividing the device layer into mesa structures corresponding to pixels; forming an inter-pixel dielectric layer filling the trench and separating the mesa structures; and forming photodetectors in the mesa structures. Other embodiments of the methods include: depositing the inter-pixel dielectric layer over the substrate; patterning the inter-pixel dielectric layer to form cavities corresponding to the pixels; epitaxially growing the mesa structures in the cavities; and forming the photodetectors in the mesa structures.Type: GrantFiled: August 10, 2020Date of Patent: April 11, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chiao-Chi Wang, Chung-Chuan Tseng, Chia-Ping Lai, Szu-Chien Tseng, Yeh-Hsun Fang
-
Publication number: 20230093001Abstract: A method includes forming a plurality of openings extending into a substrate from a front surface of the substrate. The substrate includes a first semiconductor material. Each of the plurality of openings has a curve-based bottom surface. The method includes filling the plurality of openings with a second semiconductor material. The second semiconductor material is different from the first semiconductor material. The method includes forming a plurality of pixels that are configured to sense light in the plurality of openings, respectively, using the second semiconductor material.Type: ApplicationFiled: November 28, 2022Publication date: March 23, 2023Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yeh-Hsun Fang, Chiao-Chi Wang, Chung-Chuan Tseng, Chia-Ping Lai
-
Patent number: 11545518Abstract: A method for fabricating an image sensor is described which includes forming an insulating layer on a semiconductor substrate and forming a recess in the semiconductor substrate and the insulating layer. An epitaxial structure is grown in the recess. A first polish treatment is then performed to the insulating layer and the epitaxial structure. The insulating layer is detected to obtain a signal intensity, and the signal intensity increases as a thickness of the insulating layer decreases. The first polish treatment stops when the signal intensity reaches a target value.Type: GrantFiled: August 11, 2020Date of Patent: January 3, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chiao-Chi Wang, Chung-Chuan Tseng, Chia-Ping Lai
-
Patent number: 11515355Abstract: A method includes forming a plurality of openings extending into a substrate from a front surface of the substrate. The substrate includes a first semiconductor material. Each of the plurality of openings has a curve-based bottom surface. The method includes filling the plurality of openings with a second semiconductor material. The second semiconductor material is different from the first semiconductor material. The method includes forming a plurality of pixels that are configured to sense light in the plurality of openings, respectively, using the second semiconductor material.Type: GrantFiled: June 15, 2020Date of Patent: November 29, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LIMITEDInventors: Yeh-Hsun Fang, Chiao-Chi Wang, Chung-Chuan Tseng, Chia-Ping Lai
-
Publication number: 20220375972Abstract: Various embodiments of the present disclosure are directed towards methods for forming an image sensor in which a device layer overlies and has a different semiconductor material than a substrate and in which the device layer has high crystalline quality. Some embodiments of the methods include: epitaxially growing the device layer on the substrate; patterning the device layer to form a trench dividing the device layer into mesa structures corresponding to pixels; forming an inter-pixel dielectric layer filling the trench and separating the mesa structures; and forming photodetectors in the mesa structures. Other embodiments of the methods include: depositing the inter-pixel dielectric layer over the substrate; patterning the inter-pixel dielectric layer to form cavities corresponding to the pixels; epitaxially growing the mesa structures in the cavities; and forming the photodetectors in the mesa structures.Type: ApplicationFiled: August 4, 2022Publication date: November 24, 2022Inventors: Chiao-Chi Wang, Chung-Chuan Tseng, Chia-Ping Lai, Szu-Chien Tseng, Yeh-Hsun Fang
-
Publication number: 20220052105Abstract: A method for fabricating an image sensor is described which includes forming an insulating layer on a semiconductor substrate and forming a recess in the semiconductor substrate and the insulating layer. An epitaxial structure is grown in the recess. A first polish treatment is then performed to the insulating layer and the epitaxial structure. The insulating layer is detected to obtain a signal intensity, and the signal intensity increases as a thickness of the insulating layer decreases. The first polish treatment stops when the signal intensity reaches a target value.Type: ApplicationFiled: August 11, 2020Publication date: February 17, 2022Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chiao-Chi WANG, Chung-Chuan TSENG, Chia-Ping LAI
-
Publication number: 20220045109Abstract: Various embodiments of the present disclosure are directed towards methods for forming an image sensor in which a device layer overlies and has a different semiconductor material than a substrate and in which the device layer has high crystalline quality. Some embodiments of the methods include: epitaxially growing the device layer on the substrate; patterning the device layer to form a trench dividing the device layer into mesa structures corresponding to pixels; forming an inter-pixel dielectric layer filling the trench and separating the mesa structures; and forming photodetectors in the mesa structures. Other embodiments of the methods include: depositing the inter-pixel dielectric layer over the substrate; patterning the inter-pixel dielectric layer to form cavities corresponding to the pixels; epitaxially growing the mesa structures in the cavities; and forming the photodetectors in the mesa structures.Type: ApplicationFiled: August 10, 2020Publication date: February 10, 2022Inventors: Chiao-Chi Wang, Chung-Chuan Tseng, Chia-Ping Lai, Szu-Chien Tseng, Yeh-Hsun Fang
-
Publication number: 20210391378Abstract: A method includes forming a plurality of openings extending into a substrate from a front surface of the substrate. The substrate includes a first semiconductor material. Each of the plurality of openings has a curve-based bottom surface. The method includes filling the plurality of openings with a second semiconductor material. The second semiconductor material is different from the first semiconductor material. The method includes forming a plurality of pixels that are configured to sense light in the plurality of openings, respectively, using the second semiconductor material.Type: ApplicationFiled: June 15, 2020Publication date: December 16, 2021Applicant: Taiwan Semiconductor Manufacturing Company LimitedInventors: Yeh-Hsun Fang, Chiao-Chi Wang, Chung-Chuan Tseng, Chia-Ping Lai
-
Publication number: 20210272988Abstract: A semiconductor device with dummy and active pixel structures and a method of fabricating the same are disclosed. The semiconductor device includes a first pixel region with a first pixel structure, a second pixel region, surrounding the first pixel region, includes a second pixel structure adjacent to the first pixel structure and electrically isolated from the first pixel structure, and a contact pad region with a pad structure disposed adjacent to the second pixel region. The first pixel structure includes a first epitaxial structure disposed within a substrate and a first capping layer disposed on the first epitaxial structure. The second pixel structure includes a second epitaxial structure disposed within the substrate and a second capping layer disposed on the second epitaxial structure. Top surfaces of the first and second epitaxial structures are substantially coplanar with each other. The first and second epitaxial structures includes a same semiconductor material.Type: ApplicationFiled: August 27, 2020Publication date: September 2, 2021Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yu-Wei CHEN, Chung-Chuan Tseng, Chiao-Chi Wang, Chia-Ping Lai
-
Publication number: 20210098514Abstract: A semiconductor device includes a first semiconductor structure and a second semiconductor structure. The first semiconductor structure includes silicon. The second semiconductor structure is embedded in the first semiconductor structure, in which the second semiconductor structure has at least one convex portion and at least one concave portion. The convex portion and the concave portion are on at least one edge of the second semiconductor structure, and a shape of the concave portion includes rectangle, trapezoid, inverted trapezoid, or parallelogram. The second semiconductor structure includes germanium, elements of group III or group V, or combinations thereof.Type: ApplicationFiled: June 5, 2020Publication date: April 1, 2021Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Zong-Jie WU, Chiao-Chi WANG, Chung-Chuan TSENG, Chia-Ping LAI
-
Publication number: 20210043675Abstract: A method of forming an image sensor includes forming a photodiode within a semiconductor substrate. The method further includes disposing an interconnect structure over the semiconductor substrate. The interconnect structure includes a contact etch stop layer (CESL) over the photodiode; and a plurality of dielectric layers over the CESL, wherein at least one dielectric layer of the plurality of dielectric layers comprises a low dielectric constant (low-k) material. The method further includes patterning at least the plurality of dielectric layers, wherein patterning at least the plurality of dielectric layers comprises defining an opening above an active region of the photodiode. The method further includes depositing a cap layer on sidewalls of the opening, wherein the cap layer includes a dielectric material having a higher moisture resistance than the low-k dielectric material.Type: ApplicationFiled: October 27, 2020Publication date: February 11, 2021Inventors: Chiao-Chi WANG, Chia-Ping LAI, Chung-Chuan TSENG
-
Patent number: 10854658Abstract: An image sensor includes a photodiode within a semiconductor substrate and an interconnect structure over the semiconductor substrate. The interconnect structure includes a contact etch stop layer (CESL), a plurality of dielectric layers over the CESL and a plurality of metallization layers in the plurality of dielectric layers. At least one dielectric layer of the plurality of dielectric layers includes a low-k dielectric material. An opening is extended through the plurality of dielectric layers to expose a portion of the CESL above an active region of the photodiode. A cap layer is on sidewalls of the opening. The cap layer includes a dielectric material having a higher moisture resistance than the low-k dielectric material.Type: GrantFiled: July 9, 2019Date of Patent: December 1, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chiao-Chi Wang, Chung-Chuan Tseng, Chia-Ping Lai