Patents by Inventor Chiao-Ti HUANG

Chiao-Ti HUANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Metal vertical transfer gate with high-k dielectric passivation lining
    Patent number: 11121169
    Abstract: A method for manufacturing an image sensor includes, for each of a plurality of photosensitive pixels of the image sensor, forming a trench in a semiconductor substrate of the image sensor, and depositing temporary transfer gate material in and above the trench. The method further includes, after the step of depositing temporary transfer gate material, high-temperature annealing at least a portion of the semiconductor substrate. In addition, the method includes, after the step of high-temperature annealing, (a) removing the temporary transfer gate material, thereby reopening the trench, (b) depositing a passivation lining, having a high-k dielectric, in the reopened trench, and (c) depositing metal on the high-k dielectric passivation lining to form a metal vertical transfer gate in the trench and extending above the trench.
    Type: Grant
    Filed: June 25, 2019
    Date of Patent: September 14, 2021
    Assignee: OmniVision Technologies, Inc.
    Inventors: Chiao-Ti Huang, Shiyu Sun, Gang Chen
  • METAL VERTICAL TRANSFER GATE WITH HIGH-K DIELECTRIC PASSIVATION LINING
    Publication number: 20200411585
    Abstract: A method for manufacturing an image sensor includes, for each of a plurality of photosensitive pixels of the image sensor, forming a trench in a semiconductor substrate of the image sensor, and depositing temporary transfer gate material in and above the trench. The method further includes, after the step of depositing temporary transfer gate material, high-temperature annealing at least a portion of the semiconductor substrate. In addition, the method includes, after the step of high-temperature annealing, (a) removing the temporary transfer gate material, thereby reopening the trench, (b) depositing a passivation lining, having a high-k dielectric, in the reopened trench, and (c) depositing metal on the high-k dielectric passivation lining to form a metal vertical transfer gate in the trench and extending above the trench.
    Type: Application
    Filed: June 25, 2019
    Publication date: December 31, 2020
    Inventors: Chiao-Ti HUANG, Shiyu SUN, Gang CHEN