Abstract: The present disclosure provides an illuminating system including a light emitting device and a luminescent material disposed approximate the light-emitting device. The luminescent material includes a strontium silicon nitride (SrSi6N8) doped by one of cerium (Ce3+) and cerium (Ce3+) and lithium (Li+).

Abstract: The present invention provides a phosphor composition for AC LEDs, which is represented by the following formula (I): M1?x?ySi2O2?wN2+2w/3:Eux,Ry??(I) wherein, M, R, x, y, and w are defined the same as the specification. In addition, the present invention also provides an AC LED manufactured with the same.

Abstract: A method of protecting alignment marks from damage in a planarization process includes providing a substrate including a surface, forming trenches in the substrate from the surface, forming a first dielectric layer on the substrate, forming a second dielectric layer on the first dielectric layer, forming a patterned second dielectric layer by removing second dielectric over the trenches, resulting in openings defined by the trenches and the patterned second dielectric layer, forming a third dielectric layer on the patterned second dielectric layer, the third dielectric layer filling the openings, and planarizing the third dielectric layer by using the patterned second dielectric layer as a stop layer, resulting in residual third dielectric in the openings that includes a first portion in the substrate and a second portion above the surface of the substrate.

Abstract: An integrated circuit that includes a line end created through use of a mask that controls line end shortening and corner rounding arising from proximity effects is provided. The mask includes a main feature having opaque and transmissive areas arranged to reflect a patterned feature of the line end, at least one of an opaque edge or a transmissive edge located at each end of the main feature, wherein the opaque edge has a set of transmissive assist features arranged therein such that the set of transmissive assist features align alternately with the transmissive areas of the main feature, and the transmissive edge has a set of opaque assist features arranged therein such that the set of opaque assist features align alternately with the opaque areas of the main feature.

Abstract: A mask for producing an image feature on an image surface during a semiconductor fabrication process is provided, the mask comprising a main feature having opaque areas and transmissive areas arranged in the form of the image feature, wherein each end of the main feature includes at least one of an opaque edge and a transmissive edge, wherein the opaque edge includes a set of transmissive assist features arranged therein such that the set of transmissive assist features align alternately with the transmissive areas of the main feature, and the transmissive edge includes a set of opaque assist features arranged therein such that the set of opaque assist features align alternately with the opaque areas of the main feature.

Abstract: An alignment mark on a wafer is described, including at least one dense pattern and at least one block-like pattern adjacent thereto and shown as at least one dark image and at least one bright image adjacent thereto. A method of getting a position reference for a wafer is also described. An above alignment mark is formed. The alignment mark, which is shown as at least one dark image and at least one bright image adjacent thereto that are formed by the at least one dense pattern and the at least one block-like pattern, is then detected.

Abstract: An alignment mark on a wafer is described, including at least one dense pattern and at least one block-like pattern adjacent thereto and shown as at least one dark image and at least one bright image adjacent thereto. A method of getting a position reference for a wafer is also described. An above alignment mark is formed. The alignment mark, which is shown as at least one dark image and at least one bright image adjacent thereto that are formed by the at least one dense pattern and the at least one block-like pattern, is then detected.

Abstract: A mask for producing an image feature on an image surface during a semiconductor fabrication process is provided, the mask comprising a main feature having opaque areas and transmissive areas arranged in the form of the image feature, wherein each end of the main feature includes at least one of an opaque edge and a transmissive edge, wherein the opaque edge includes a set of transmissive assist features arranged therein such that the set of transmissive assist features align alternately with the transmissive areas of the main feature, and the transmissive edge includes a set of opaque assist features arranged therein such that the set of opaque assist features align alternately with the opaque areas of the main feature.