Abstract: Imaging systems and techniques are described. An imaging system determines, based on image data of a scene received from an image sensor, a first plurality of pixel values corresponding to a first electromagnetic (EM) frequency domain and a second plurality of pixel values corresponding to a second EM frequency domain. The imaging system reduces the first plurality of pixel values using a plurality of cross-domain contamination values (based on the second plurality of pixel values) to generate a third plurality of pixel values. The imaging system determines a reconstructed pixel value based on a combination of at least an overexposed pixel value of the first plurality of pixel values and a corresponding pixel of the third plurality of pixel values. The imaging system outputs a reconstructed image that includes the reconstructed pixel value and a subset of the third plurality of pixel values.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first metal layer over a substrate, forming a dielectric layer over the first metal layer. The method includes forming a trench in the dielectric layer, and performing a surface treatment process on a sidewall surface of the trench to form a hydrophobic layer. The hydrophobic layer is formed on a sidewall surface of the dielectric layer. The method further includes depositing a metal material in the trench and over the hydrophobic layer to form a via structure.

Abstract: A semiconductor device comprises a fin structure disposed over a substrate; a gate structure disposed over part of the fin structure; a source/drain structure, which includes part of the fin structure not covered by the gate structure; an interlayer dielectric layer formed over the fin structure, the gate structure, and the source/drain structure; a contact hole formed in the interlayer dielectric layer; and a contact material disposed in the contact hole. The fin structure extends in a first direction and includes an upper layer, wherein a part of the upper layer is exposed from an isolation insulating layer. The gate structure extends in a second direction perpendicular to the first direction. The contact material includes a silicon phosphide layer and a metal layer.

Abstract: An installing module includes a seat bracket, a plurality of lower gaskets, a device bracket and an upper gasket. The seat bracket includes a first locking plate and a second locking plate locked to each other. The first locking plate includes a first concave and the second locking plate includes a second concave corresponding to the first concave. The lower gaskets are respectively disposed on the first concave and the second concave. The lower gaskets face each other and jointly define a lower assembly hole and are disposed on a lower side of a head-support fixer of a car seat. The device bracket is locked to the seat bracket and an electronic device is pivotally coupled to the device bracket. The upper gasket is disposed between the device bracket and the head-support fixer, and the head-support fixer is clamped between the upper gasket and the lower gaskets.

Abstract: A data transmission system is disclosed. The data transmission system includes at least one signal processing device, at least one conversion device, at least one antenna device, and at least one flexible printed circuit board. The at least one signal processing device is configured to generate or receive at least one data. The at least one conversion device is configured to transform between the at least one data and an optical signal. The at least one antenna device is configured to obtain the at least one data according to the optical signal, and configured to receive or transmit the at least one data wirelessly. The at least one flexible printed circuit board includes at least one conductive layer and at least one optical waveguide layer. The at least one optical waveguide layer is configured to transmit the optical signal.

Abstract: A transmission interface between at least a first module and a second module is proposed. The transmission interface includes at least two physical transmission mediums. Each physical transmission medium is arranged to carry a multiplexed signal in which at least two signals are integrated. The at least two physical transmission mediums include a first physical transmission medium arranged to carry a first multiplexed signal including a first IF signal and a reference clock signal. The first IF signal and the reference clock signal are at different frequencies.

Abstract: The present invention provides a protection circuit applied to a battery module, which includes a self-control protector, a switch element and a voltage clamping loop; the self-control protector includes a fuse unit and a heater; when the switch element receives a control signal, the switch element will be turned on; when the switch element is turned on, the voltage clamping loop provides a clamp voltage to clamp a working current passing through the self-control protector within a current range where the fuse unit can be blown; and as such, the fuse unit of the self-control protector will be blown by the working current heating the heater.

Abstract: A memory test circuit is provided. The memory test circuit is disposed in a memory chip and electrically coupled to a memory macro of the memory chip. A high speed clock receives an input signal and an external clock signal. The input signal includes a plurality of test bits. A finite state machine controller provides a pattern type. A pattern generator generates and provides a test signal to at least one memory cell of the memory chip to write the test signal to the at least one memory cell based on the pattern type and the external clock signal. A test frequency of the test signal is determined based on the high speed clock. An output comparator outputs a comparison signal based on a difference between the test signal and a readout signal corresponding to the test signal read from the at least one memory cell.

Abstract: A memory test circuit is provided. The memory test circuit is disposed in a memory array and including: a test array, including test cells out of memory cells of the memory array; a write multiplexer, configured to selectively output one of a test signal and a reference voltage based on a write measurement signal, wherein the test signal is output to write into at least one test cell and the reference voltage is output to a sense amplifier; and a read multiplexer, configured to selectively receive and output one of a readout signal corresponding to the test signal and an amplified signal based on a read measurement signal, wherein the readout signal is read from the at least one test cell and the amplified signal is obtained for a read margin evaluation from the sense amplifier by amplifying a voltage difference between the readout signal and the reference voltage.

Abstract: A display panel and a pixel circuit thereof are provided. The pixel circuit includes a driving current generator, a pulse width signal generator, a voltage provider, and a current enabler. The driving current generator provides a driving current. The pulse width signal generator includes an output switch. The output switch is controlled by a control signal, and provides a pulse width signal according to the control signal. The voltage provider adjusts the control signal according to a data write-in signal and a pulse width modulation enable signal. The current enabler provides the driving current to a lighting component according to the pulse width signal and an amplitude modulation enable signal.

Abstract: An apparatus includes a vacuum chamber, a reflective optical element arranged in the vacuum chamber and configured to reflect an extreme ultra-violet (EUV) light, and a cleaning module positioned in the vacuum chamber. the cleaning module is operable to provide a mitigation gas flowing towards the reflective optical element and provide a hydrogen-containing gas flowing towards the reflective optical element. The mitigation gas mitigates, by chemical reaction, contamination of the reflective optical element.

Abstract: A semiconductor device includes a first set of nanostructures stacked over a substrate in a vertical direction, and each of the first set of nanostructures includes a first end portion and a second end portion, and a first middle portion laterally between the first end portion and the second end portion. The first end portion and the second end portion are thicker than the first middle portion. The semiconductor device also includes a first plurality of semiconductor capping layers around the first middle portions of the first set of nanostructures, and a gate structure around the first plurality of semiconductor capping layers.

Abstract: Various embodiments of the present disclosure are directed towards an integrated chip. The integrated chip includes a first photodetector disposed in a first pixel region of a semiconductor substrate and a second photodetector disposed in a second pixel region of the semiconductor substrate. The second photodetector is laterally separated from the first photodetector. A first diffuser is disposed along a back-side of the semiconductor substrate and over the first photodetector. A second diffuser is disposed along the back-side of the semiconductor substrate and over the second photodetector. A first midline of the first pixel region and a second midline of the second pixel region are both disposed laterally between the first diffuser and the second diffuser.

Abstract: An electronic device, a carrying buckle, and a carrying frame of a carrying buckle are provided. The carrying frame is integrally formed as a single one-piece structure and is insertable into a retaining case along an insertion direction for being fixed in the retaining case. The carrying frame includes a body segment, two buckling arms respectively extending from two opposite sides of the body segment, and an elastic structure that extends from the body segment. The elastic structure is elastically deformable when being pressed along the insertion direction, such that an abutting end of each of the two buckling arms has a displacement that allows the abutting end to be abutted against the retaining case.

Abstract: The present disclosure provides a multi-state one-time programmable (MSOTP) memory circuit including a memory cell and a programming voltage driving circuit. The memory cell includes a MOS storage transistor, a first MOS access transistor and a second MOS access transistor electrically connected to store two bits of data. When the memory cell is in a writing state, the programming voltage driving circuit outputs a writing control potential to the gate of the MOS storage transistor, and when the memory cell is in a reading state, the programming voltage driving circuit outputs a reading control potential to the gate of the MOS storage transistor.

Abstract: A circuit includes a sense amplifier, a first clamping circuit, a second clamping circuit, and a feedback circuit. The first clamping circuit includes first clamping branches coupled in parallel between the sense amplifier and a memory array. The second clamping circuit includes second clamping branches coupled in parallel between the sense amplifier and a reference array. The feedback circuit is configured to selectively enable or disable one or more of the first clamping branches or one or more of the second clamping branches in response to an output data outputted by the sense amplifier.

Abstract: This disclosure relates to a surgical tool configured for holding an implant includes an inner rod and a sleeve. The inner rod includes a rod portion and a holding portion. The holding portion is located at one end of the rod portion and has a first accommodation space configured for accommodating at least part of the implant. The sleeve includes a sleeving portion and a retaining portion. The sleeving portion is slidably sleeved on the rod portion of the inner rod. The retaining portion is located at one end of the sleeving portion and selectively presses against the holding portion. The inner rod further includes at least one fin portion protruded from the holding portion and located in the first accommodation space for being inserted into at least one slot of the implant.

Abstract: A package assembly and a manufacturing method thereof are provided. The package assembly includes a first package component and an optical signal port disposed aside the first package component. The first package component includes a first die including an electronic integrated circuit, a first insulating encapsulation laterally covering the first die, a redistribution structure disposed on the first die and the first insulating encapsulation, and a second die including a photonic integrated circuit and electrically coupled to the first die through the redistribution structure. The optical signal port is optically coupled to an edge facet of the second die of the first package component.