Abstract: A semiconductor structure includes a conductive line, a pad layer, and a barrier layer. The conductive line is embedded in a multi-level interconnect structure. The pad layer is over the conductive line. The barrier layer is between the conductive line and the pad layer. The pad layer is electrically connected to the conductive line through the barrier layer, and the barrier layer includes a first poly-crystalline layer and a second poly-crystalline layer. A boundary is between the first poly-crystalline layer and the second poly-crystalline layer.

Abstract: A method includes forming a first conductive feature over a semiconductor substrate, forming an ILD layer over the first conductive feature, patterning the ILD layer to form a trench, and forming a conductive layer over the patterned ILD layer to fill the trench. The method further includes polishing the conductive layer to form a via contact configured to interconnect the first conductive feature with a second conductive feature, where polishing the conductive layer exposes a top surface of the ILD layer, polishing the exposed top surface of the ILD layer, such that a top portion of the via contact protrudes from the exposed top surface of the ILD layer, and forming the second conductive feature over the via contact, such that the top portion of the via contact extends into the second conductive feature.

Abstract: A semiconductor structure including a substrate, a first well, a first doped region, a second doped region, a third doped region, a second well, a fourth doped region, and a fifth doped region is provided. The substrate has a first conductivity type. The first well is disposed in the substrate and has a second conductivity type. The first doped region is disposed in the first well and has the second conductivity type. The second doped region is disposed in the first well and has the first conductivity type. The third doped region is disposed in the first well and has the first conductivity type. The second well is disposed in the first well. The fourth doped region is disposed in the second well and has the first conductivity type. The fifth doped region is disposed in the second well and has the second conductivity type.

Abstract: The invention provides a communication system and a communication method. The communication system includes a wireless communication apparatus, a control center apparatus, and an unmanned aerial vehicle. The control center apparatus controls the unmanned aerial vehicle to fly within a first range, so that the unmanned aerial vehicle searches for the wireless communication apparatus within the first range. When the unmanned aerial vehicle finds the wireless communication apparatus within the first range, the control center apparatus controls the unmanned aerial vehicle to fly within a second range. The second range is equal to or less than a communicable range of the wireless communication apparatus. The unmanned aerial vehicle continuously receives a physiological information signal with physiological information transmitted by the wireless communication apparatus. The unmanned aerial vehicle transmits the physiological information signal back to the control center apparatus.

Abstract: An electronic device includes a scattering structure, a dimming structure and a controller. The dimming structure is arranged on the scattering structure. The controller is electrically connected to the dimming structure. The controller includes a first control unit, and the first control unit is provided to adjust the transmittance of the dimming structure.

Abstract: The present disclosure, in some embodiments, relates to an image sensor integrated chip. The image sensor integrated chip includes a substrate having a first side and a second side opposing the first side. The substrate has one or more sidewalls defining a trench extending along opposing sides of a pixel region having a first width. An isolation structure including one or more dielectric materials is disposed within the trench. The isolation structure has a second width. An image sensing element and a focal region are disposed within the pixel region. The focal region is configured to receive incident radiation along the second side of the substrate. A ratio of the second width to the first width is in a range of between approximately 0.1 and approximately 0.2, so that the focal region is completely confined between interior sidewall of the isolation structure facing the image sensing element.

Abstract: A flexible display module includes a first light-transmissive layer and a first display layer. The first light-transmissive layer includes a display surface. The first light-transmissive layer has a first width in a second direction. The first display layer is disposed below the first light-transmissive layer. The first display layer has a second width in the second direction. The first display layer includes a circuit layer. The flexible display module is configured to be bent along an axis, the axis extends along a first direction, the first direction is perpendicular to the second direction, and the first width is greater than the second width. A line width of the circuit layer more close to a periphery of the display surface is less than a line width of the circuit layer more close to an inner area of the display surface.

Abstract: An example compute cabinet assembly includes an equipment room, an air inlet channel coupled to the equipment room, and a cabinet fan module coupled to the equipment room. The compute cabinet assembly further includes first and second air outlet channels. The first air outlet channel extends along a side of the equipment room towards an outlet of the first air outlet channel. The second air outlet channel extends along another side of the equipment room towards an outlet of the second air outlet channel. The compute cabinet assembly also includes electric fans positioned in the cabinet fan module. The electric fans are configured to create airflow originating at an inlet of the air inlet channel, extending through the equipment room and cabinet fan module, and exiting the compute cabinet assembly at the outlets of the first and second air outlet channels.

Abstract: An electronic device with switchable modes includes a light scattering switching element, a light absorbing switching and an image generating element. The light absorbing switching element is disposed adjacent to the light scattering switching element. The image generating element is provided for generating an image. In a projection mode, the image generated by the image generating element sequentially passes through the light scattering switching element and the light absorbing switching element to be displayed.

Abstract: An example compute cabinet assembly includes an equipment room configured to implement electrical components therein, an air inlet channel coupled to a first side of the equipment room, and a cabinet fan module coupled to a second side of the equipment room opposite the first side. A first air outlet channel is coupled to the cabinet fan module and extends along a third side of the equipment room towards a first outlet of the first air outlet channel. Moreover, electric fans are positioned in the cabinet fan module, the electric fans being configured to create an airflow path originating at an inlet of the air inlet channel. The airflow path further extends through the equipment room and cabinet fan module. A guide plate is also positioned adjacent to an inlet of the equipment room, the guide plate being configured to uniformly distribute the airflow path through the equipment room.

Abstract: An optical element driving mechanism is provided and includes a fixed assembly, a movable assembly, a driving assembly and a stopping assembly. The fixed assembly has a main axis. The movable assembly is configured to connect an optical element, and the movable assembly is movable relative to the fixed assembly. The driving assembly is configured to drive the movable assembly to move relative to the fixed assembly. The stopping assembly is configured to limit the movement of the movable assembly relative to the fixed assembly within a range of motion.

Abstract: An example assembly includes an equipment room, a cabinet fan module having fans, and a processor configured to execute logic. Temperature sensors are positioned in the air inlet channel and the equipment room. An electrical component having an air inlet area is also positioned in the equipment room. The logic causes the fans to operate at a predetermined speed, and compare a temperature in the air inlet channel with a temperature at the air inlet area. In response to determining that the temperature at the air inlet area is greater than the temperature in the air inlet channel plus a constant value, the operating speed of the fans is increased. Moreover, the operating speed of the fans is decreased in response to determining that the ambient temperature in the air inlet channel plus a constant value is greater than or equal to the temperature at the air inlet area.

Abstract: A read voltage adjustment method, a memory storage device, and a memory control circuit unit are disclosed. The method includes: sending a write command sequence instructing to program a plurality of first memory cells in a rewritable non-volatile memory module; sending a first read command sequence instructing to read the programmed first memory cells using a first read voltage level to obtain first count information; obtaining first compensation information corresponding to the first read voltage level, wherein the first compensation information reflects a deviation in evenly programming the first memory cells to a plurality of states; and adjusting the first read voltage level according to the first count information, the first compensation information, and default count information corresponding to the first read voltage level.

Abstract: Storage systems and method of using the same are provided. An exemplary storage system according to the present disclosure includes a storage device including a plurality of storage locations arranged in an upright stadium shape and a plurality of load ports each movable to engage any of the plurality of storage locations.

Abstract: An electronic device and a method for manufacturing the same are provided. The method for manufacturing the electronic device comprises the following steps: forming a protective layer on a plurality of electronic units; disposing the plurality of electronic units with the protective layer and a plurality of driving units on a substrate, respectively; forming a color layer on the plurality of electronic units with the protective layer, the plurality of driving units and the substrate; and removing the color layer on the plurality of electronic units with the protective layer.

Abstract: An electronic device includes: a panel, including: a first substrate; a second substrate disposed opposite to the first substrate; a light modulation layer disposed between the first substrate and the second substrate; a plurality of first strip electrodes disposed between the first substrate and the light modulation layer; a plurality of second strip electrodes disposed between the second substrate and the light modulation layer; a first electrode disposed between the first substrate and the plurality of first strip electrodes; and a second electrode disposed between the second substrate and the plurality of second strip electrodes, wherein the light modulation layer includes a liquid crystal material and a dye material, and an extension direction of the plurality of first strip electrodes is different from an extension direction of the plurality of second strip electrodes.

Abstract: A method for manufacturing a semiconductor device includes forming a first dielectric layer over a semiconductor fin. The method includes forming a second dielectric layer over the first dielectric layer. The method includes exposing a portion of the first dielectric layer. The method includes oxidizing a surface of the second dielectric layer while limiting oxidation on the exposed portion of the first dielectric layer.

Abstract: A dual-chamber pressure control method and a dual-chamber pressure control device are described. The dual-chamber pressure control method uses a stepped pressure adjustment to ensure that the pressure adjustment at each stage will not exceed a safe value of an internal chamber body. The dual-chamber pressure control device includes a dual-chamber member, an external chamber pressure control module, and an internal chamber pressure control module. The external chamber pressure control module is used to adjust an external chamber pressure of the dual-chamber member, such that an external chamber pressure value changes with time to show a stepped external chamber pressure adjustment line. The internal chamber pressure control module is used to adjust an internal chamber pressure of the dual-chamber member, such that an internal chamber pressure value changes with time to show a stepped internal chamber pressure adjustment line.

Abstract: A semiconductor high pressure annealing device is described. The semiconductor high pressure annealing device includes a chamber body, a cover, a lifting mechanism, and a floating sealing structure. Air tightness between the chamber body and the cover is achieved by the floating sealing structure. A first sealing ring and a second sealing ring of the floating sealing structure are arranged on the top and the bottom for reducing the damage to the first sealing ring and the second sealing ring when the cover moves up and down. A preload spring assembly of the floating sealing structure can provide tension to assist in improving the air tightness between the chamber body and the cover.

Abstract: A vertical dual-chamber annealing device is provided. The vertical dual-chamber annealing device includes an outer chamber unit, an inner chamber body, a temperature control unit, a supporting structure, and a gas-tight seal structure. The inner chamber body can be moved upward, such that the inner chamber body can be located in the outer chamber unit and supported by the supporting structure. After the supporting of the supporting structure is removed, the inner chamber body is moved downward and separated from the outer chamber unit. Therefore, an arrangement of the inner chamber body and the outer chamber unit can increase the convenience of cleaning and replacing the inner chamber body. The structure of the inner chamber body can enhance the uniformity of a reaction temperature. The gas-tight seal structure isolates an inert gas and a reactive gas, which is beneficial to the recovery and the reuse of the reactive gas.