Abstract: A system in package structure and an electrostatic discharge protection structure thereof are provided. The electrostatic discharge protection structure includes a redistribution layer and a first transistor array. The redistribution layer has a first electrode and a second electrode. The first transistor array is coupled to a pin end of at least one integrated circuit, the first electrode and the second electrode. The first transistor array has a plurality of transistors. A plurality of first transistors of the transistors are coupled in parallel, and a plurality of second transistors of the transistors are coupled in parallel. The first transistors and the second transistors are configured to be turned on for dissipating an electrostatic discharge current.

Abstract: A chip package structure including a redistribution structure layer, at least one chip, and an encapsulant is provided. The redistribution structure layer includes at least one redistribution circuit, at least one transistor electrically connected to the redistribution circuit, and a plurality of conductive vias electrically connected to the redistribution circuit and the transistor. The chip is disposed on the redistribution structure layer and electrically connected to the redistribution structure layer. The encapsulant is disposed on the redistribution structure layer and at least encapsulates the chip. A manufacturing method of a chip package structure is also provided.

Abstract: A pixel structure including a substrate, a power wire, a planarization layer, a drive circuit and a conductive structure is provided. The substrate has a layout area and a light-transmitting area located outside the layout area. The power wire is disposed on the layout area of the substrate. The power wire includes a shielding layer. The planarization layer is disposed on the substrate and covers the power wire. The drive circuit is disposed on the planarization layer and corresponds to the layout area. The drive circuit includes a first active device. The shielding layer overlaps with the first active device. The conductive structure is disposed in the planarization layer and distributed corresponding to the layout area. The power wire is electrically connected with the drive circuit through the conductive structure. A display panel is also provided.

Abstract: A flexible chip package is provided. The flexible chip package includes a first flexible substrate; a first redistribution layer disposed on the first flexible substrate; a second flexible substrate; a second redistribution layer disposed on the second flexible substrate; a semiconductor chip disposed between the first and second redistribution layers and electrically connected to at least one of the first and second redistribution layers; and a first bonding layer disposed between the first and second redistribution layers and encapsulating the semiconductor chip, wherein the first bonding layer, the first redistribution layer and the second redistribution layer are between the first flexible substrate and the second flexible substrate.

Abstract: A pixel structure including a substrate, a power wire, a planarization layer, a drive circuit and a conductive structure is provided. The substrate has a layout area and a light-transmitting area located outside the layout area. The power wire is disposed on the layout area of the substrate. The power wire includes a shielding layer. The planarization layer is disposed on the substrate and covers the power wire. The drive circuit is disposed on the planarization layer and corresponds to the layout area. The drive circuit includes a first active device. The shielding layer overlaps with the first active device. The conductive structure is disposed in the planarization layer and distributed corresponding to the layout area. The power wire is electrically connected with the drive circuit through the conductive structure. A display panel is also provided.

Abstract: A transistor device including a semiconductor material layer, a gate layer, and an insulation layer between the gate layer and the semiconductor material layer is provided. The semiconductor material layer includes a first conductive portion, a second conductive portion, a channel portion between the first conductive portion and the second conductive portion, and a first protruding portion formed integrally. The channel portion has a first boundary adjacent to the first conductive portion, a second boundary adjacent to the second conductive portion, a third boundary, and a fourth boundary. The third boundary and the fourth boundary connect the terminals of the first boundary and the second boundary. The first protruding portion is protruded outwardly from the third boundary of the channel portion. The first gate boundary and the second gate boundary are overlapped with the first boundary and the second boundary of the channel portion.

Abstract: A thin film transistor disposed on a substrate is provided. The thin film transistor includes a channel, a gate, a source, a drain and an etching stop layer. The channel is disposed above the substrate and is located between the etching stop layer and the source. The gate is disposed on the substrate and overlapped with the channel. The source is disposed between the channel and the substrate and electrically connected to the channel. The channel is disposed between the drain and the substrate. The etching stop layer is disposed between the drain and the channel and has a first through hole exposing a portion of the channel. The drain is filled in the first through hole of the etching stop layer and is electrically connected to the channel. The drain covers the channel completely.

Abstract: A thin film transistor disposed on a substrate is provided. The thin film transistor includes a channel, a gate, a source, a drain and an etching stop layer. The channel is disposed above the substrate and is located between the etching stop layer and the source. The gate is disposed on the substrate and overlapped with the channel. The source is disposed between the channel and the substrate and electrically connected to the channel. The channel is disposed between the drain and the substrate. The etching stop layer is disposed between the drain and the channel and has a first through hole exposing a portion of the channel. The drain is filled in the first through hole of the etching stop layer and is electrically connected to the channel. The drain covers the channel completely.