Abstract: A wireless communication system comprises a transceiver, a housing, and a handle. The transceiver comprises an antenna. The housing has an interior volume. The handle is coupled to the housing externally from the interior volume, and the antenna is positioned within the handle.

Abstract: Disclosed are a heat-electricity discrete power module with two-way heat-dissipation ceramic substrates and a manufacturing method of the same, including: two double-sided metal-clad ceramic substrates, a power transistor die, and an insulation sealant; each double-sided metal-clad ceramic substrate including a ceramic insulation layer, a three-dimensional conductive layer formed on the first ceramic insulation layer and facing the opposite three-dimensional conductive layer to constitute an electrical circuit, and a thermally-conductive metallic layer opposite and insulated from the three-dimensional conductive layer, respectively; electrodes of each power transistor die are electrically conductively connected to the three-dimensional conductive layer, and their upper and lower surfaces are thermally conductively connected to respective three-dimensional conductive layers; circuit components are additionally mounted on the three-dimensional conductive layers; at least one conductive post is formed between th

Abstract: An electronic device includes a housing, an antenna structure, and a feeding element. The antenna structure includes a grounding element, a feeding radiation element, a switching circuit, and a first parasitic radiation element. The feeding radiation element includes a feeding portion, a first radiating portion, a second radiating portion, a first grounding arm, and a second grounding arm. The feeding portion is connected between the first radiating portion and the second radiating portion. The first grounding arm and the second grounding arm are connected to the first radiating portion. The switching circuit is electrically connected to the first grounding arm and the second grounding arm. The first parasitic radiation element is connected to the grounding element and coupled with the feeding radiation element.

Abstract: A method includes: forming a mask layer on a semiconductor wafer; forming a tin droplet, including: supplying tin to a high-pressure reservoir from a low-pressure reservoir; monitoring a level of tin in the high-pressure reservoir by at least two electrodes attached to the high-pressure reservoir; in response to the level of the tin exceeding a threshold value, supplying the tin to a droplet generator from the high-pressure reservoir; forming the tin droplet by the droplet generator using the tin supplied from the high-pressure reservoir; generating light by the tin droplet; and patterning the mask layer by the light.

Abstract: The present application discloses a light-emitting device comprises a semiconductor light-emitting element, a transparent element covering the semiconductor light-emitting element, an insulating layer which connects to the transparent element, an intermediate layer which connects to the insulating layer; and a conductive adhesive material connecting to the intermediate layer.

Abstract: A first capping layer is deposited over a substrate. A first capping layer is deposited over a substrate. A network of nanowires is grown over the first capping layer. A second capping layer is deposited over the network of nanowires. The substrate is etched to expose the first capping layer. The first capping layer and the second capping layer are thinned around the nanowires to form a coating on the nanowires.

Abstract: A rotating direction and rotating speed sensing device includes a tested unit, a housing, and a Hall effect sensor disposed in the housing. The tested unit includes an output shaft, and a toothed disk sleeved on and driven by the output shaft. The Hall effect sensor positionally corresponds to the toothed disk for detecting rotating direction and rotating speed, and includes three Hall effect sensing elements spaced apart along a first straight line, and a first pin and a second pin respectively outputting a first signal and a second signal when the toothed disk rotates. The first straight line cooperates with a tangential direction of the toothed disk to form an included angle that ranges in a predetermined angle range, such that a phase shift between the first signal and the second signal ranges from 45 degrees to 135 degrees when the toothed disk rotates.

Abstract: An interaction control method for detecting a default object in a real-time image and an electronic device are introduced. The method includes steps of image recognition, interaction area setting, movement detection, and playing execution, wherein a default object, a reference object and a setting object are recognized by artificial intelligence in the real-time image, and the electronic device triggers a preset instruction corresponding to the interaction content corresponding to an interaction area by artificial intelligence to recognize a preset instruction corresponding to the interaction content of an interaction area, and the electronic device executes the preset instruction to play a sound response. A terminal device in communication connection with an electronic device and a non-transitory computer-readable recording medium are further provided.

Abstract: The invention encompasses hydrogels, monomer precursors of the hydrogels, methods for the preparation thereof, and methods of use therefor. The linking of monomers can take place using non-radical, bioorthogonal reactions such as copper-free click-chemistry.

Abstract: A semiconductor structure and a semiconductor die are provided. The semiconductor structure includes a semiconductor substrate, an electronic circuit, a first seal ring, a buffer zone and a conductive routing. The semiconductor substrate has a circuit region and a seal ring region surrounding the circuit region. The electronic circuit is disposed on the semiconductor substrate in the circuit region. The first seal ring is disposed on the semiconductor substrate in the seal ring region and surrounding the circuit region. The buffer zone is located in the seal ring region and interposed between the circuit region and the first seal ring. The first seal ring is separated from the circuit region by the buffer zone. The conductive routing is disposed on the semiconductor substrate in the buffer zone. The conductive routing is electrically connected to the electronic circuit.

Abstract: A sand-proof sprinkler mechanism has a base. A housing and a connecting platform are provided on the base. A hose is rotatably connected between the housing and the connecting platform. The housing has a water outlet, a housing inner chamber and a water inlet that are in communication with the hose. The housing includes an impeller transmission member and a transmission device that is drivingly connected to the impeller transmission member and the hose. The housing further has a sealing chamber for mounting the transmission device. A water baffle is provided at an opening of the sealing chamber for covering the sealing chamber. The above structure prevents particles from entering and getting stuck.

Abstract: A ceramic material includes zirconia toughened alumina (ZTA) doped with scandium (Sc) ions. ZTA can be further doped with other metal ions, and the other metal ions include cobalt (Co) ions, chromium (Cr) ions, zinc (Zn) ions, titanium (Ti) ions, manganese (Mn) ions, nickel (Ni) ions, or a combination thereof. The ceramic material can be used as a ceramic object, such as a wire bonding capillary, a heat dissipation plate, a denture tooth, orthopedic implants, direct bonded copper, or a high-temperature co-fired ceramic.

Abstract: An electronic device having an antenna structure is disclosed. The antenna structure includes a substrate, a first radiating portion, a second radiating portion connected to the first radiating portion, a grounding portion, a shorting portion connected between the second radiating portion and the grounding portion, a third radiating portion, a first grounding extension portion connected between the third radiating portion and the grounding portion, and a first capacitive element coupled between a first section and a second section of the shorting portion. The coupling of the shorting portion, the first grounding extension portion, and the third radiating portion generates a first operating frequency band, and the coupling of the first radiating portion, the shorting portion, the first grounding extension portion, and the third radiating portion generates a second operating frequency band, which is higher than the first operating frequency band, through the matching of the first capacitive element.

Abstract: A pyrazole metal complex for absorption of carbon dioxide, a method for preparing the pyrazole metal complex, and a method for absorbing carbon dioxide are provided; wherein the product produced by reacting pyrazole metal complex and carbon dioxide may be transformed into several economically valuable compounds.

Abstract: Certain aspects of the present disclosure generally relate to electronic circuits and, more particularly, to an operational transconductance amplifier (OTA). One example amplifier generally includes: a first pair of input transistors; a first pair of cascode transistors coupled in cascode with the first pair of input transistors, respectively; a second pair of input transistors; a second pair of cascode transistors coupled in cascode with the second pair of input transistors, respectively; and a third pair of input transistors coupled to the second pair of cascode transistors, respectively.

Abstract: The present disclosure describes a semiconductor device having artificial field plates. The semiconductor device includes a first gallium nitride (GaN) layer on a substrate, an aluminum gallium nitride (AlGaN) layer on the first GaN layer, and a second GaN layer on the AlGaN layer. The first and second GaN layers includes different types of dopants. The semiconductor device further includes a gate contact structure in contact with the second GaN layer, first and second source/drain (S/D) contact structures in contact with the AlGaN layer, one or more artificial field plates between the gate contact structure and the first S/D contact structure. The first and second S/D contact structures are disposed at opposite sides of the gate contact structure. The one or more artificial field plates are separated from the first and second S/D contact structures and above the AlGaN layer.

Abstract: A rotating direction and rotating speed sensing device includes a tested unit, a housing, and a Hall effect sensor disposed in the housing. The tested unit includes an output shaft, and a toothed disk sleeved on and driven by the output shaft. The Hall effect sensor positionally corresponds to the toothed disk for detecting rotating direction and rotating speed, and includes three Hall effect sensing elements spaced apart along a first straight line, and a first pin and a second pin respectively outputting a first signal and a second signal when the toothed disk rotates. The first straight line cooperates with a tangential direction of the toothed disk to form an included angle that ranges in a predetermined angle range, such that a phase shift between the first signal and the second signal ranges from 45 degrees to 135 degrees when the toothed disk rotates.

Abstract: Various embodiments of the present disclosure are directed towards a semiconductor device comprising a plurality of quasi field plates (QFPs) for enhanced wafer uniformity and performance. A channel layer and a barrier layer are stacked on a substrate, and the channel layer accommodates a two-dimensional carrier gas (2DCG). A source electrode, a drain electrode, and a gate electrode overlie the channel and barrier layers, and the gate electrode is between the source and drain electrodes in a first direction. The plurality of QFPs are between the gate electrode and the drain electrode. Further, the plurality of QFPs are capacitively or directly electrically coupled to the drain electrode, and are spaced from each other laterally in a line in a second direction transverse to the first direction.

Abstract: The present invention provides an optical interposer for chip connection including a first total internal reflective layer, a waveguide and a second total internal reflective layer. The optical interposer is disposed above a first photonic integrated circuit chip and a second photonic integrated circuit chip, coupling the first photonic integrated circuit chip and the second photonic integrated circuit chip. The refractive indices of the first total internal reflective layer and the second total internal reflective layer are lower than the waveguide, making a light signal perform repetitive total internal reflections at the junctions between materials and advance in a zigzag shape within the waveguide, and further transmits between the first photonic integrated circuit chip and the second photonic integrated circuit chip.

Abstract: A pluggable optical packaging structure is provided, including: a substrate, a carrier ring, at least one optical connection assembly and a cover plate; the substrate includes at least one electronic integrated circuit (EIC) and at least one photonic integrated circuit (PIC); the carrier ring is located on the substrate, and the EIC and PIC are enclosed by the carrier ring; the optical connection assembly includes at least one socket, at least one connector, a plurality of optical fibers and at least one optical fiber array connector, the socket is located in a partial section of the carrier ring, the connector is in the socket, the optical fibers has one end coupled to the connector, the other end coupled to the fiber array connector, and is coupled to the PIC through the fiber array connector; the cover plate is located on the carrier ring and extends inwardly to above the PIC.