Abstract: A piezoelectric material includes: an oxide containing Na, Ba, Nb, Ti, and Mn, in which the oxide has a perovskite-type structure, a total amount of metal elements other than Na, Ba, Nb, Ti, and Mn contained in the piezoelectric material is 0.5 mol % or less with respect to a total amount of Na, Ba, Nb, Ti, and Mn, a molar ratio x of Ti to a total molar amount of Nb and Ti is 0.05?x?0.12, a molar ratio y of Na to Nb is 0.93?y?0.98, a molar ratio z of Ba to Ti is 1.09?z?1.60, a molar ratio m of Mn to the total molar amount of Nb and Ti is 0.0006?m?0.0030, and 1.07?y×z?1.50 is satisfied.

Abstract: A lead-free piezoelectric material includes perovskite-type metal oxide containing Na, Nb, Ba, Ti, and Mg and indicates excellent piezoelectric properties. The piezoelectric material satisfies the following relational expression (1): 0.430?a?0.460, 0.433?b?0.479, 0.040?c?0.070, 0.0125?d?0.0650, 0.0015?e?0.0092, 0.9×3e?c?d?1.1×3e, a+b+c+d+e=1, where a, b, c, d, and e denote the relative numbers of Na, Nb, Ba, Ti, and Mg atoms, respectively.

Abstract: Provided is a lead-free piezoelectric material reduced in dielectric loss tangent, and achieving both a large piezoelectric constant and a large mechanical quality factor. A piezoelectric material according to at least one embodiment of the present disclosure is a piezoelectric material including a main component formed of a perovskite-type metal oxide represented by the general formula (1): Nax+s(1?y)(BiwBa1?s?w)1?yNbyTi1?yO3 (where 0.84?x?0.92, 0.84?y?0.92, 0.002?(w+s)(1?y)?0.035, and 0.9?w/s?1.1), and a Mn component, wherein the content of the Mn is 0.01 mol % or more and 1.00 mol % or less with respect to the perovskite-type metal oxide.

Abstract: Provided is a coating liquid for forming a piezoelectric thin film containing lead zirconate titanate, the coating liquid including a complex precursor containing at least three kinds of metal elements of Pb, Ti, and Zr, the coating liquid being free from an exothermic peak at a temperature of 450° C. or more, or having a heat generation amount at a temperature of from 400° C. to 450° C., which is larger than a heat generation amount at a temperature of from 450° C. to 500° C., in differential thermal analysis of the coating liquid.

Abstract: Provided is use of an oriented piezoelectric film including of a perovskite-type crystal represented by the following general formula (1): Ba1-xCaxTi1-yZryO3 (0?x?0.2, 0?y?0.2) (1). The oriented piezoelectric film is formed on an oriented underlayer oriented in a (111) plane and contains first crystals oriented in the (111) plane with respect to a film surface and randomly oriented second crystal grains. The first crystal grains have an average grain diameter of from 300 nm to 600 nm and the second crystal grains have an average grain diameter of from 50 nm to 200 nm.

Abstract: Provided is a lead-free piezoelectric material reduced in dielectric loss tangent, and achieving both a large piezoelectric constant and a large mechanical quality factor. A piezoelectric material according to at least one embodiment of the present disclosure is a piezoelectric material including a main component formed of a perovskite-type metal oxide represented by the general formula (1): Nax+s(1?y)(BiwBa1?s?w)1?yNbyTi1?yO3 (where 0.84?x?0.92, 0.84?y?0.92, 0.002?(w+s)(1?y)?0.035, and 0.9?w/s?1.1), and a Mn component, wherein the content of the Mn is 0.01 mol % or more and 1.00 mol % or less with respect to the perovskite-type metal oxide.

Abstract: A lead-free piezoelectric material includes perovskite-type metal oxide containing Na, Nb, Ba, Ti, and Mg and indicates excellent piezoelectric properties. The piezoelectric material satisfies the following relational expression (1): 0.430?a?0.460, 0.433?b?0.479, 0.040?c?0.070, 0.0125?d?0.0650, 0.0015?e?0.0092, 0.9×3e?c?d?1.1×3e, a+b+c+d+e=1, where a, b, c, d, and e denote the relative numbers of Na, Nb, Ba, Ti, and Mg atoms, respectively.

Abstract: A piezoelectric material includes: an oxide containing Na, Ba, Nb, Ti, and Mn, in which the oxide has a perovskite-type structure, a total amount of metal elements other than Na, Ba, Nb, Ti, and Mn contained in the piezoelectric material is 0.5 mol % or less with respect to a total amount of Na, Ba, Nb, Ti, and Mn, a molar ratio x of Ti to a total molar amount of Nb and Ti is 0.05?x?0.12, a molar ratio y of Na to Nb is 0.93?y?0.98, a molar ratio z of Ba to Ti is 1.09?z?1.60, a molar ratio m of Mn to the total molar amount of Nb and Ti is 0.0006?m?0.0030, and 1.07?y×z?1.50 is satisfied.

Abstract: Provided is use of an oriented piezoelectric film including of a perovskite-type crystal represented by the following general formula (1): Ba1-xCaxTi1-yZryO3 (0?x?0.2, 0?y?0.2) (1). The oriented piezoelectric film is formed on an oriented underlayer oriented in a (111) plane and contains first crystals oriented in the (111) plane with respect to a film surface and randomly oriented second crystal grains. The first crystal grains have an average grain diameter of from 300 nm to 600 nm and the second crystal grains have an average grain diameter of from 50 nm to 200 nm.

Abstract: Provided is a coating liquid for forming a piezoelectric thin film containing lead zirconate titanate, the coating liquid including a complex precursor containing at least three kinds of metal elements of Pb, Ti, and Zr, the coating liquid being free from an exothermic peak at a temperature of 450° C. or more, or having a heat generation amount at a temperature of from 400° C. to 450° C., which is larger than a heat generation amount at a temperature of from 450° C. to 500° C., in differential thermal analysis of the coating liquid.

Abstract: Provided is a lead-free piezoelectric material having a satisfactory and stable piezoelectric constant and electric insulation property in a wide practical temperature range. Provided is a piezoelectric material, including a perovskite-type metal oxide represented by the following general formula (1) as a main component, the piezoelectric material containing Mn in a content of 0.01 part by weight or more and 0.80 part by weight or less with respect to 100 parts by weight of the perovskite-type metal oxide: (Li?xNa?yK?zBa?Bi0.5?+?)a(Ti?+?Fe?) O3 . . . (1), where 0.800???0.999, 0???0.150, 0.001???0.050, ?+?+?=1, 0?x?0.050, 0.045?y?0.450, 0.045?z?0.450, 0.450?x+y+z?0.500, and 0.980?a?1.020.

Abstract: Provided is a lead-free dielectric ceramics having a low leakage current value, and a bismuth iron oxide powder as a raw material thereof. The bismuth iron oxide powder includes at least: (A) grains including a bismuth iron oxide having a perovskite-type crystal structure; (B) grains including a bismuth iron oxide having a crystal structure classified to a space group Pbam; and (C) grains including a bismuth iron oxide or a bismuth oxide having a crystal structure that is classified to a space group I23. The dielectric ceramics are made of bismuth iron oxide in which the bismuth iron oxide crystals having the crystal structure classified to the space group Pbam are distributed at a grain boundary of crystal grains of the bismuth iron oxide crystals having the perovskite-type crystal structure.

Abstract: Provided is a lead-free piezoelectric material having a satisfactory and stable piezoelectric constant and electric insulation property in a wide practical temperature range. Provided is a piezoelectric material, including a perovskite-type metal oxide represented by the following general formula (1) as a main component, the piezoelectric material containing Mn in a content of 0.01 part by weight or more and 0.80 part by weight or less with respect to 100 parts by weight of the perovskite-type metal oxide: (Li?xNa?yK?zBa?Bi0.5?+?)a(Ti?+?Fe?) O3 . . . (1), where 0.800???0.999, 0???0.150, 0.001???0.050, ?+?+?=1, 0?x?0.050, 0.045?y?0.450, 0.045?z?0.450, 0.450?x+y+z?0.500, and 0.980?a?1.020.

Abstract: Provided is a lead-free dielectric ceramics having a low leakage current value, and a bismuth iron oxide powder as a raw material thereof. The bismuth iron oxide powder includes at least: (A) grains including a bismuth iron oxide having a perovskite-type crystal structure; (B) grains including a bismuth iron oxide having a crystal structure classified to a space group Pbam; and (C) grains including a bismuth iron oxide or a bismuth oxide having a crystal structure that is classified to a space group I23. The dielectric ceramics are made of bismuth iron oxide in which the bismuth iron oxide crystals having the crystal structure classified to the space group Pbam are distributed at a grain boundary of crystal grains of the bismuth iron oxide crystals having the perovskite-type crystal structure.

Abstract: There are disclosed a piezoelectric thin film having less non-uniform portions and holding satisfactory piezoelectric characteristics, a method of manufacturing the film, a piezoelectric element using the piezoelectric thin film, and an ink jet system recording head using the piezoelectric element. In the piezoelectric thin film of perovskite crystals formed on a substrate by a sol-gel process and represented by a general formula Pb(1-x)Lax(ZryTi1-y)O3 (where 0?x<1, 0.05?y?1), a film thickness of the thin film is 1000 nm or more and 4000 nm or less, and a difference between a maximum value and a minimum value of y in an arbitrary portion of the thin film is 0.05 or less.

Abstract: Provided is a lead-free dielectric ceramics having a low leakage current value, and a bismuth iron oxide powder as a raw material thereof. The bismuth iron oxide powder includes at least: (A) grains including a bismuth iron oxide having a perovskite-type crystal structure; (B) grains including a bismuth iron oxide having a crystal structure classified to a space group Pbam; and (C) grains including a bismuth iron oxide or a bismuth oxide having a crystal structure that is classified to a space group I23. The dielectric ceramics are made of bismuth iron oxide in which the bismuth iron oxide crystals having the crystal structure classified to the space group Pbam are distributed at a grain boundary of crystal grains of the bismuth iron oxide crystals having the perovskite-type crystal structure.

Abstract: There is are disclosed a piezoelectric thin film having less non-uniform portions and holding satisfactory piezoelectric characteristics, a method of manufacturing the film, a piezoelectric element using the piezoelectric thin film, and an ink jet system recording head using the piezoelectric element. In the piezoelectric thin film of perovskite crystals formed on a substrate by a sol-gel process and represented by a general formula Pb(1?x)Lax (ZryTi1?y) O3 (where 0?x<1, 0.05?y?1), a film thickness of the thin film is 1000 nm or more and 4000 nm or less, and a difference between a maximum value and a minimum value of y in an arbitrary portion of the thin film is 0.05 or less.

Abstract: There are disclosed a piezoelectric thin film having less non-uniform portions and holding satisfactory piezoelectric characteristics, a method of manufacturing the film, a piezoelectric element using the piezoelectric thin film, and an ink jet system recording head using the piezoelectric element. In the piezoelectric thin film of perovskite crystals formed on a substrate by a sol-gel process and represented by a general formula Pb(1?x)Lax(ZryTi1?y)O3 (where 0?x<1, 0.05?y?1), a film thickness of the thin film is 1000 nm or more and 4000 nm or less, and a difference between a maximum value and a minimum value of y in an arbitrary portion of the thin film is 0.05 or less.

Abstract: Provided is a lead-free dielectric ceramics having a low leakage current value, and a bismuth iron oxide powder as a raw material thereof. The bismuth iron oxide powder includes at least: (A) grains including a bismuth iron oxide having a perovskite-type crystal structure; (B) grains including a bismuth iron oxide having a crystal structure classified to a space group Pbam; and (C) grains including a bismuth iron oxide or a bismuth oxide having a crystal structure that is classified to a space group I23. The dielectric ceramics are made of bismuth iron oxide in which the bismuth iron oxide crystals having the crystal structure classified to the space group Pbam are distributed at a grain boundary of crystal grains of the bismuth iron oxide crystals having the perovskite-type crystal structure.

Abstract: A piezoelectric element having a piezoelectric film and one pair of electrodes being in contact with the piezoelectric film on a substrate, wherein the piezoelectric film has a structure in which a lead-containing piezoelectric film and a lead-free piezoelectric film are laminated, and in the piezoelectric film, a layer furthest from the substrate and a layer closest to the substrate are lead-free piezoelectric films.