Abstract: A method of fabricating a shallow trench isolation structure is disclosed. On a substrate, a pad oxide layer and a mask layer are successively formed. The pad oxide layer, the mask layer and a portion of the substrate are patterned to form a trench. After performing a rapid wet thermal process, a liner layer is formed on the exposed surface of the substrate, including the exposed silicon surface of the substrate in the trench and sidewalls and the surface of the mask layer. An oxide layer is deposited over the trench and the substrate and fills the trench. A planarization process is performed until the mask layer is exposed. The mask layer and the pad oxide layer are removed to complete the shallow trench isolation structure.

Abstract: A method of fabricating a MOS transistor having SEG Si. After the formation of a gate and a spacer and before a source/drain region is formed, a selective epitaxial growth (SEG) Si is deposited over the substrate. The spacer is then removed to form an ultra shallow junction in the exposed substrate covered by the spacer after the formation of the SEG Si.

Abstract: A method of manufacturing a binary phase shift photomask. A phase shift layer and a mask layer are sequentially formed over a transparent substrate. The mask layer and the phase shift layer are patterned to form a plurality of first openings and a plurality of second openings that expose a portion of the transparent substrate. The mask layer is patterned to form a layer of mask material around the edges of the first openings. All first openings occupy an area greater than a preset minimum area while all second openings occupy an area greater than the preset minimum area. The mask layer only surrounds the first openings while the phase shift layer surrounds both the first and the second openings.

Abstract: A method for manufacturing a metal oxide semiconductor transistor having a raised source/drain is described. A first spacer is formed on a sidewall of a gate electrode. An epitaxial layer is then formed on the exposed surface of the substrate and a top surface of the gate electrode. A light implantation step is then performed on the substrate while using the gate electrode and the first spacer as a first mask. Thereafter, a second spacer is formed on the sidewall of the gate electrode. A heavy implantation step is then performed on the substrate while using the gate electrode, the first spacer and the second spacer as a second mask. The epitaxial layer is then formed before the forming of the extension structure of the source/drain. Therefore, dopants in a source/drain extension structure avoid suffering the high temperature needed to form the epitaxial layer so that the redistribution of the dopants is prevented.

Abstract: A alternating phase shift mask comprises a phase shift layer formed between a light-penetrable substrate and a sheltering layer. The sheltering layer covers a sheltered region formed on the phase shift layer. The section of the light-penetrable substrate exposed by the phase shift layer and the sheltering layer is defined as a penetrating region. Incident light forms a phase angle of 180° in the penetrating region and the sheltering layer to make constructive interference and to enhance the resolution of photolithographic process.

Abstract: A method for producing a phase shifting mask comprising the steps of first forming a phase shifting layer capable of shifting incoming light by a 360.degree. phase shift angle over a transparent substrate, or forming two phase shifting layers, which are each capable of shifting incoming light by a 180.degree. phase shift angle, before carrying out the steps required to fabricate the phase shifting mask in a conventional method. With the additional phase shifting layer or layers, damage to the transparent substrate due to etching is prevented. Moreover, phase errors caused by defective regions in the phase shifting mask can be removed, easily resulting in the formation of a defect-free mask.

Abstract: A method of fabricating a single layer phase shift mask is provided. The method is characterized by depositing an opaque layer by using a defect repair machine on a given place of the phase shift layer formed by a conventional method. The opaque layer is formed on the alignment mark. The single layer phase shift mask of the invention can provide better resolution for transferred patterns projected on the wafer and can avoid registration deviation and reduce a problem of misalignment of the alignment mark efficiently by decreasing the transmittance of the alignment mark, such as a reticule mark or a stepper mark.

Abstract: A method for manufacturing phase-shifting masks utilizing a photolithographic process and sidewall spacers to fabricate a phase-shifting layer. The method provides precise control over the shape and size of the resulting phase-shifting layer, and thus, simplifies photomask production.

Abstract: A method for aligning a mask in a photolithographic process is provided. This method allows the technician to easily see by the naked eye or by use of a microscope any misalignment of the mask, such that the misalignment can be easily corrected. The method includes providing the mask with an opaque frame having four corners, forming a plurality of alignment patterns on a platform where the mask is to be placed, and performing an alignment of the mask by visually checking for misalignment of the mask with reference to the alignment patterns on the platform. The alignment patterns may include a plurality of parallel-spaced bars both in the crosswise and lengthwise directions, to allow the technician to visually check for any misalignment of the mask and thereby shift the mask pellicle to the aligned position.