Patents by Inventor Chien Chi TIEN
Chien Chi TIEN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12171092Abstract: A static random access memory (SRAM) periphery circuit includes a first n-type transistor and a second n-type transistor that are disposed in a first well region of first conductivity type, the first well region occupies a first distance in a row direction equal to a bitcell-pitch of an SRAM array. The SRAM periphery circuit includes a first p-type transistor and a second p-type transistor that are disposed in a second well region of second conductivity type. The second well region occupies a second distance in the row direction equal to the bitcell-pitch of the SRAM array. The second well region is disposed adjacent to the first well region in the row direction.Type: GrantFiled: November 9, 2023Date of Patent: December 17, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Yangsyu Lin, Chi-Lung Lee, Chien Chi Tien, Chiting Cheng
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Publication number: 20240404566Abstract: Header circuitry for a memory device includes multiple backside power rails that form distinct voltage sources for a plurality of switching devices in the header circuitry. The header circuitry includes at least one region of a first conductivity type. A first section in the first region includes one backside power rail (BPR) that forms a first voltage source that provides a first voltage. A second section in the same first region includes another BPR that forms a second voltage source that provides a second voltage that is different from the first voltage.Type: ApplicationFiled: July 25, 2024Publication date: December 5, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Haruki MORI, Chien-Chi TIEN, Chia-En HUANG, Hidehiro FUJIWARA, Yen-Huei CHEN, Feng-Lun CHEN
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Patent number: 12136466Abstract: Header circuitry for a memory device includes multiple backside power rails that form distinct voltage sources for a plurality of switching devices in the header circuitry. The header circuitry includes at least one region of a first conductivity type. A first section in the first region includes one backside power rail (BPR) that forms a first voltage source that provides a first voltage. A second section in the same first region includes another BPR that forms a second voltage source that provides a second voltage that is different from the first voltage.Type: GrantFiled: July 31, 2023Date of Patent: November 5, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Haruki Mori, Chien-Chi Tien, Chia-En Huang, Hidehiro Fujiwara, Yen-Huei Chen, Feng-Lun Chen
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Publication number: 20240311543Abstract: An integrated circuit includes a first active region of a first set of transistors of a first type, a second active region of a second set of transistors of the first type, a third active region of a third set of transistors of the first type and a fourth active region of a fourth set of transistors of a second type. The first, second, third and fourth active regions extend in a first direction, and are in a first level. The first and second active regions are adjacent to a first boundary and have a first width in a second direction. The third active region is adjacent to a second boundary, and has a second width. The fourth active region is between the second active region and the third active region, and has the first width.Type: ApplicationFiled: May 28, 2024Publication date: September 19, 2024Inventors: Po-Sheng WANG, Chao Yuan CHENG, Chien-Chi TIEN, Yangsyu LIN
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Patent number: 11995388Abstract: An integrated circuit includes a first active region of a first set of transistors of a first type, a second active region of a second set of transistors of the first type, a third active region of a third set of transistors of the first type, a fourth active region of a fourth set of transistors of the first type and a fifth active region of a fifth set of transistors of a second type. The first, second, fourth and fifth active region have a first width in a second direction, and are on a first level. The third active region is on the first level, and has a second width different from the first width. The second active region is adjacent to the first boundary, and is separated from the first active region in the second direction. The fourth active region is adjacent to the second boundary.Type: GrantFiled: May 15, 2023Date of Patent: May 28, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Po-Sheng Wang, Chao Yuan Cheng, Chien-Chi Tien, Yangsyu Lin
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Publication number: 20240074136Abstract: A static random access memory (SRAM) periphery circuit includes a first n-type transistor and a second n-type transistor that are disposed in a first well region of first conductivity type, the first well region occupies a first distance in a row direction equal to a bitcell-pitch of an SRAM array. The SRAM periphery circuit includes a first p-type transistor and a second p-type transistor that are disposed in a second well region of second conductivity type. The second well region occupies a second distance in the row direction equal to the bitcell-pitch of the SRAM array. The second well region is disposed adjacent to the first well region in the row direction.Type: ApplicationFiled: November 9, 2023Publication date: February 29, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yangsyu LIN, Chi-Lung LEE, Chien-Chi TIEN, Chiting CHENG
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Publication number: 20240056074Abstract: An integrated circuit device includes: an integrated circuit module; a first field-effect transistor coupled between the integrated circuit module and a first reference voltage, and controlled by a first control signal; and a second field-effect transistor coupled between the integrated circuit module and the first reference voltage; wherein the second field-effect transistor is a complementary field-effect transistor of the first field-effect transistor, and the first field-effect transistor and the second field-effect transistor are configured to generate a second reference voltage for the integrated circuit module according to the first control signal.Type: ApplicationFiled: October 29, 2023Publication date: February 15, 2024Inventors: TZUNG-YO HUNG, PIN-DAI SUE, CHIEN-CHI TIEN, TING-WEI CHIANG
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Patent number: 11856747Abstract: A static random access memory (SRAM) periphery circuit includes a first n-type transistor and a second n-type transistor that are disposed in a first well region of first conductivity type, the first well region occupies a first distance in a row direction equal to a bitcell-pitch of an SRAM array. The SRAM periphery circuit includes a first p-type transistor and a second p-type transistor that are disposed in a second well region of second conductivity type. The second well region occupies a second distance in the row direction equal to the bitcell-pitch of the SRAM array. The second well region is disposed adjacent to the first well region in the row direction.Type: GrantFiled: May 23, 2022Date of Patent: December 26, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Yangsyu Lin, Chi-Lung Lee, Chien-Chi Tien, Chiting Cheng
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Patent number: 11855619Abstract: An integrated circuit device includes: an integrated circuit module; a first field-effect transistor coupled between the integrated circuit module and a first reference voltage, and controlled by a first controlled signal; and a second field-effect transistor coupled between the integrated circuit module and the first reference voltage; wherein the second field-effect transistor is a complementary field-effect transistor of the first field-effect transistor, and the first field-effect transistor and the second field-effect transistor are configured to generate a second reference voltage for the integrated circuit module according to the first control signal.Type: GrantFiled: January 15, 2020Date of Patent: December 26, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Tzung-Yo Hung, Pin-Dai Sue, Chien-Chi Tien, Ting-Wei Chiang
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Publication number: 20230410851Abstract: Header circuitry for a memory device includes multiple backside power rails that form distinct voltage sources for a plurality of switching devices in the header circuitry. The header circuitry includes at least one region of a first conductivity type. A first section in the first region includes one backside power rail (BPR) that forms a first voltage source that provides a first voltage. A second section in the same first region includes another BPR that forms a second voltage source that provides a second voltage that is different from the first voltage.Type: ApplicationFiled: July 31, 2023Publication date: December 21, 2023Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Haruki MORI, Chien-Chi TIEN, Chia-En HUANG, Hidehiro FUJIWARA, Yen-Huei CHEN, Feng-Lun CHEN
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Publication number: 20230297754Abstract: An integrated circuit includes a first active region of a first set of transistors of a first type, a second active region of a second set of transistors of the first type, a third active region of a third set of transistors of the first type, a fourth active region of a fourth set of transistors of the first type and a fifth active region of a fifth set of transistors of a second type. The first, second, fourth and fifth active region have a first width in a second direction, and are on a first level. The third active region is on the first level, and has a second width different from the first width. The second active region is adjacent to the first boundary, and is separated from the first active region in the second direction. The fourth active region is adjacent to the second boundary.Type: ApplicationFiled: May 15, 2023Publication date: September 21, 2023Inventors: Po-Sheng WANG, Chao Yuan CHENG, Chien-Chi TIEN, Yangsyu LIN
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Patent number: 11715501Abstract: Header circuitry for a memory device includes multiple backside power rails that form distinct voltage sources for a plurality of switching devices in the header circuitry. The header circuitry includes at least one region of a first conductivity type. A first section in the first region includes one backside power rail (BPR) that forms a first voltage source that provides a first voltage. A second section in the same first region includes another BPR that forms a second voltage source that provides a second voltage that is different from the first voltage.Type: GrantFiled: June 29, 2022Date of Patent: August 1, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Haruki Mori, Chien-Chi Tien, Chia-En Huang, Hidehiro Fujiwara, Yen-Huei Chen, Feng-Lun Chen
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Patent number: 11651133Abstract: A method of forming an integrated circuit includes placing a first cell layout design of the integrated circuit on a layout design, and manufacturing the integrated circuit based on the layout design. Placing the first cell layout design includes placing a first active region layout pattern adjacent to a first cell boundary, placing a second active region layout pattern adjacent to a second cell boundary, and placing a first set of active region layout patterns between the first and second active region layout patterns, according to a first set of guidelines. The first set of guidelines includes selecting transistors of a first type with a first driving strength and transistors of a second type with a second driving strength. In some embodiments, the first, second and first set of active region layout patterns extend in the first direction, and are on a first layout level.Type: GrantFiled: September 24, 2020Date of Patent: May 16, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Po-Sheng Wang, Chao Yuan Cheng, Chien-Chi Tien, Yangsyu Lin
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Publication number: 20220328077Abstract: Header circuitry for a memory device includes multiple backside power rails that form distinct voltage sources for a plurality of switching devices in the header circuitry. The header circuitry includes at least one region of a first conductivity type. A first section in the first region includes one backside power rail (BPR) that forms a first voltage source that provides a first voltage. A second section in the same first region includes another BPR that forms a second voltage source that provides a second voltage that is different from the first voltage.Type: ApplicationFiled: June 29, 2022Publication date: October 13, 2022Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Haruki MORI, Chien-Chi TIEN, Chia-En HUANG, Hidehiro FUJIWARA, Yen-Huei CHEN, Feng-Lun CHEN
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Publication number: 20220285370Abstract: A static random access memory (SRAM) periphery circuit includes a first n-type transistor and a second n-type transistor that are disposed in a first well region of first conductivity type, the first well region occupies a first distance in a row direction equal to a bitcell-pitch of an SRAM array. The SRAM periphery circuit includes a first p-type transistor and a second p-type transistor that are disposed in a second well region of second conductivity type. The second well region occupies a second distance in the row direction equal to the bitcell-pitch of the SRAM array. The second well region is disposed adjacent to the first well region in the row direction.Type: ApplicationFiled: May 23, 2022Publication date: September 8, 2022Inventors: Yangsyu LIN, Chi-Lung LEE, Chien-Chi TIEN, Chiting CHENG
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Patent number: 11398257Abstract: Header circuitry for a memory device includes multiple backside power rails that form distinct voltage sources for a plurality of switching devices in the header circuitry. The header circuitry includes at least one region of a first conductivity type. A first section in the first region includes one backside power rail (BPR) that forms a first voltage source that provides a first voltage. A second section in the same first region includes another BPR that forms a second voltage source that provides a second voltage that is different from the first voltage.Type: GrantFiled: October 30, 2020Date of Patent: July 26, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Haruki Mori, Chien-Chi Tien, Chia-En Huang, Hidehiro Fujiwara, Yen-Huei Chen, Feng-Lun Chen
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Patent number: 11342340Abstract: A static random access memory (SRAM) periphery circuit includes a first n-type transistor and a second n-type transistor that are disposed in a first well region of first conductivity type, the first well region occupies a first distance in a row direction equal to a bitcell-pitch of an SRAM array. The SRAM periphery circuit includes a first p-type transistor and a second p-type transistor that are disposed in a second well region of second conductivity type. The second well region occupies a second distance in the row direction equal to the bitcell-pitch of the SRAM array. The second well region is disposed adjacent to the first well region in the row direction.Type: GrantFiled: October 26, 2020Date of Patent: May 24, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Yangsyu Lin, Chi-Lung Lee, Chien-Chi Tien, Chiting Cheng
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Publication number: 20210279396Abstract: A method of forming an integrated circuit includes placing a first cell layout design of the integrated circuit on a layout design, and manufacturing the integrated circuit based on the layout design. Placing the first cell layout design includes placing a first active region layout pattern adjacent to a first cell boundary, placing a second active region layout pattern adjacent to a second cell boundary, and placing a first set of active region layout patterns between the first and second active region layout patterns, according to a first set of guidelines. The first set of guidelines includes selecting transistors of a first type with a first driving strength and transistors of a second type with a second driving strength. In some embodiments, the first, second and first set of active region layout patterns extend in the first direction, and are on a first layout level.Type: ApplicationFiled: September 24, 2020Publication date: September 9, 2021Inventors: Po-Sheng WANG, Chao Yuan CHENG, Chien-Chi TIEN, Yangsyu LIN
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Publication number: 20210218398Abstract: An integrated circuit device includes: an integrated circuit module; a first field-effect transistor coupled between the integrated circuit module and a first reference voltage, and controlled by a first controlled signal; and a second field-effect transistor coupled between the integrated circuit module and the first reference voltage; wherein the second field-effect transistor is a complementary field-effect transistor of the first field-effect transistor, and the first field-effect transistor and the second field-effect transistor are configured to generate a second reference voltage for the integrated circuit module according to the first control signal.Type: ApplicationFiled: January 15, 2020Publication date: July 15, 2021Inventors: TZUNG-YO HUNG, PIN-DAI SUE, CHIEN-CHI TIEN, TING-WEI CHIANG
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Publication number: 20210201961Abstract: Header circuitry for a memory device includes multiple backside power rails that form distinct voltage sources for a plurality of switching devices in the header circuitry. The header circuitry includes at least one region of a first conductivity type. A first section in the first region includes one backside power rail (BPR) that forms a first voltage source that provides a first voltage. A second section in the same first region includes another BPR that forms a second voltage source that provides a second voltage that is different from the first voltage.Type: ApplicationFiled: October 30, 2020Publication date: July 1, 2021Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Haruki MORI, Chien-Chi TIEN, Chia-En HUANG, Hidehiro FUJIWARA, Yen-Huei CHEN, Feng-Lun CHEN