Abstract: A static random access memory (SRAM) periphery circuit includes a first n-type transistor and a second n-type transistor that are disposed in a first well region of first conductivity type, the first well region occupies a first distance in a row direction equal to a bitcell-pitch of an SRAM array. The SRAM periphery circuit includes a first p-type transistor and a second p-type transistor that are disposed in a second well region of second conductivity type. The second well region occupies a second distance in the row direction equal to the bitcell-pitch of the SRAM array. The second well region is disposed adjacent to the first well region in the row direction.

Abstract: A static random access memory (SRAM) periphery circuit includes a first n-type transistor and a second n-type transistor that are disposed in a first well region of first conductivity type, the first well region occupies a first distance in a row direction equal to a bitcell-pitch of an SRAM array. The SRAM periphery circuit includes a first p-type transistor and a second p-type transistor that are disposed in a second well region of second conductivity type. The second well region occupies a second distance in the row direction equal to the bitcell-pitch of the SRAM array. The second well region is disposed adjacent to the first well region in the row direction.

Abstract: A static random access memory (SRAM) periphery circuit includes a first n-type transistor and a second n-type transistor that are disposed in a first well region of first conductivity type, the first well region occupies a first distance in a row direction equal to a bitcell-pitch of an SRAM array. The SRAM periphery circuit includes a first p-type transistor and a second p-type transistor that are disposed in a second well region of second conductivity type. The second well region occupies a second distance in the row direction equal to the bitcell-pitch of the SRAM array. The second well region is disposed adjacent to the first well region in the row direction.

Abstract: An integrated circuit (IC) memory device includes a first conductive layer. The IC memory device also includes a second conductive layer over the first conductive layer. The IC memory device further includes a first-type pin box electrically coupled with the first conductive layer. The IC memory device additionally includes a second-type pin box, different from the first-type pin box, electrically coupled with the second conductive layer.

Abstract: A sense amplifier (SA) comprises a semiconductor substrate having an oxide definition (OD) region, a pair of SA sensing devices, a SA enabling device, and a sense amplifier enabling signal (SAE) line for carrying an SAE signal. The pair of SA sensing devices have the same poly gate length Lg as the SA enabling device, and they all share the same OD region. When enabled, the SAE signal turns on the SA enabling device to discharge one of the pair of SA sensing devices for data read from the sense amplifier.

Abstract: A semiconductor memory cell array is disclosed that includes a memory cell unit. The memory cell unit includes an active region, a first transistor, a second transistor, a gate structure, and an interconnect. The first transistor and the second transistor are formed on the active region. The gate structure is formed on the active region and between the first transistor and the second transistor. The interconnect connects the gate structure and at least one of sources of the first transistor and the second transistor to a power line.

Abstract: An integrated circuit (IC) memory device includes a first conductive layer. The IC memory device also includes a second conductive layer over the first conductive layer. The IC memory device further includes a first-type pin box electrically coupled with the first conductive layer. The IC memory device additionally includes a second-type pin box, different from the first-type pin box, electrically coupled with the second conductive layer.

Abstract: An integrated circuit (IC) memory device that includes a first conductive layer, a second conductive layer electrically coupled to the first conductive layer, the second conductive layer formed over the first conductive layer, a third conductive layer separated from the second conductive layer, the third conductive layer formed over the second conductive layer, a fourth conductive layer electrically coupled to the third conductive layer, the fourth conductive layer formed over the third conductive layer, a 2P2E pin box formed in and electrically coupled to the first conductive layer or the second conductive layer and a 1P1E pin box formed in and electrically coupled to the third conductive layer or the fourth conductive layer.

Abstract: An integrated circuit (IC) memory device that includes a first conductive layer, a second conductive layer electrically coupled to the first conductive layer, the second conductive layer formed over the first conductive layer, a third conductive layer separated from the second conductive layer, the third conductive layer formed over the second conductive layer, a fourth conductive layer electrically coupled to the third conductive layer, the fourth conductive layer formed over the third conductive layer, a 2P2E pin box formed in and electrically coupled to the first conductive layer or the second conductive layer and a 1P1E pin box formed in and electrically coupled to the third conductive layer or the fourth conductive layer.

Abstract: A semiconductor memory cell array is disclosed that includes a memory cell unit. The memory cell unit includes an active region, a first transistor, a second transistor, a gate structure, and an interconnect. The first transistor and the second transistor are formed on the active region. The gate structure is formed on the active region and between the first transistor and the second transistor. The interconnect connects the gate structure and at least one of sources of the first transistor and the second transistor to a power line.

Abstract: A sense amplifier (SA) comprises a semiconductor substrate having an oxide definition (OD) region, a pair of SA sensing devices, a SA enabling device, and a sense amplifier enabling signal (SAE) line for carrying an SAE signal. The pair of SA sensing devices have the same poly gate length Lg as the SA enabling device, and they all share the same OD region. When enabled, the SAE signal turns on the SA enabling device to discharge one of the pair of SA sensing devices for data read from the sense amplifier.