Abstract: A wide input voltage range power converter circuit in a one-stage-two-switch configuration has a power input terminal, a switch node connected to the power input terminal, a transformer, two electronic switches, a pulse width modulation (PWM) circuit, and an output circuit. An input side of the transformer has a first winding and a second winding that are connected to the switch node. An output side of the transformer has an output winding. A turns ratio between the first winding and the output winding is different from a turns ratio between the second winding and the output winding. The two electronic switches are respectively connected to the first winding and the second winding in series. The PWM circuit is connected to the power input terminal and control terminals of the two electronic switches. The output circuit is connected to the output winding.

Abstract: Semiconductor structures and methods for forming a semiconductor structure are provided. An active semiconductor region is disposed in a substrate. A gate is formed over the substrate. Source and drain regions of a transistor are formed in the active semiconductor region on opposite sides of the gate. The drain region has a first width, and the source region has a second width that is not equal to the first width.

Abstract: A chip packaging structure includes a circuit redistribution structure, a chip, a sealing layer, and an antenna pattern. The circuit redistribution structure includes a first and a second circuit layer, and a conductive pad. The second circuit layer is disposed on and electrically connected to the first circuit layer. The conductive pad is electrically connected to the second circuit layer. The chip is disposed on the circuit redistribution structure and electrically connected to the second circuit layer. The sealing layer having an opening and a groove covers the chip and the circuit redistribution structure. The opening exposes the conductive pad. A portion of the groove communicates with the opening. The antenna pattern includes a first and a second portion. The first portion covers sidewalls of the opening and is electrically connected to the conductive pad. The second portion is filled in the groove and electrically connected to the first portion.

Abstract: A light-emitting diode package including a carrier structure, a patterned conductive layer, at least one chip, a dielectric layer, at least one first conductive via, a build-up circuit structure, and at least one light-emitting diode is provided. The patterned conductive layer is disposed on the carrier structure. The chip is disposed on the carrier structure. The dielectric layer is disposed on the carrier structure and encapsulates the chip and the patterned conductive layer. The first conductive via penetrates the dielectric layer and is electrically connected to the patterned conductive layer. The build-up circuit structure is disposed on the dielectric layer and electrically connected to the first conductive via. The light-emitting diode is disposed on the build-up circuit structure.

Abstract: A substrate structure includes a glass substrate, a first circuit layer, a second circuit layer, and at least one conductive region. The glass substrate has a first surface and a second surface opposing the first surface. The first circuit layer is disposed on the first surface. The second circuit layer is disposed on the second surface. The conductive region includes a plurality of conductive micro vias. The conductive micro vias penetrate through the glass substrate. The conductive micro vias are electrically connected to the first circuit layer and the second circuit layer, and the conductive micro vias have a via size of 2 ?m to 10 ?m.

Abstract: A manufacturing method of a substrate structure includes the following steps. A first build-up circuit structure is formed. At least one copper pillar is formed on the first build-up circuit structure. A dielectric layer is formed on the first build-up circuit structure, and the dielectric layer wraps the copper pillar. A second build-up circuit structure and a capacitive element are formed on the dielectric layer. In particular, the second build-up circuit structure and the first build-up circuit structure are respectively located at two opposite sides of the dielectric layer. The capacitive element is disposed in a capacitive element setting region within the second build-up circuit structure. The copper pillar penetrates the dielectric layer and is electrically connected to the second build-up circuit structure and the first build-up circuit structure.

Abstract: A chip packaging structure includes a circuit redistribution structure, a chip, a sealing layer, and an antenna pattern. The circuit redistribution structure includes a first and a second circuit layer, and a conductive pad. The second circuit layer is disposed on and electrically connected to the first circuit layer. The conductive pad is electrically connected to the second circuit layer. The chip is disposed on the circuit redistribution structure and electrically connected to the second circuit layer. The sealing layer having an opening and a groove covers the chip and the circuit redistribution structure. The opening exposes the conductive pad. A portion of the groove communicates with the opening. The antenna pattern includes a first and a second portion. The first portion covers sidewalls of the opening and is electrically connected to the conductive pad. The second portion is filled in the groove and electrically connected to the first portion.

Abstract: A circuit carrier board structure includes a first substrate, a second substrate, an adhesive layer, and a plurality of contact pads. The first substrate includes a first surface and a second surface, and also includes a plurality of first build-up layers sequentially stacked. The first build-up layers include a first dielectric layer and a first circuit layer. The second substrate includes a third surface and a fourth surface, and also includes a plurality of second build-up layers sequentially stacked. The second build-up layers include a second dielectric layer and a second circuit layer. The second surface is combined to the third surface. The connection pads are on the first surface and electrically connected to the first circuit layer. The first substrate is electrically connected to the second substrate. A manufacturing method of the circuit carrier board structure is also provided.

Abstract: A circuit carrier board structure includes a first substrate, a second substrate, an adhesive layer, and a plurality of contact pads. The first substrate includes a first surface and a second surface, and also includes a plurality of first build-up layers sequentially stacked. The first build-up layers include a first dielectric layer and a first circuit layer. The second substrate includes a third surface and a fourth surface, and also includes a plurality of second build-up layers sequentially stacked. The second build-up layers include a second dielectric layer and a second circuit layer. The second surface is combined to the third surface. The connection pads are on the first surface and electrically connected to the first circuit layer. The first substrate is electrically connected to the second substrate. A manufacturing method of the circuit carrier board structure is also provided.

Abstract: A chip packaging structure includes a circuit redistribution structure, a chip, a sealing layer, and an antenna pattern. The circuit redistribution structure includes a first and a second circuit layer, and a conductive pad. The second circuit layer is disposed on and electrically connected to the first circuit layer. The conductive pad is electrically connected to the second circuit layer. The chip is disposed on the circuit redistribution structure and electrically connected to the second circuit layer. The sealing layer having an opening and a groove covers the chip and the circuit redistribution structure. The opening exposes the conductive pad. A portion of the groove communicates with the opening. The antenna pattern includes a first and a second portion. The first portion covers sidewalls of the opening and is electrically connected to the conductive pad. The second portion is filled in the groove and electrically connected to the first portion.

Abstract: A composite substrate structure includes a circuit substrate, a first anisotropic conductive film, a first glass substrate, a dielectric layer, a patterned circuit layer and a conductive via. The first anisotropic conductive film is disposed on the circuit substrate. The first glass substrate is disposed on the first anisotropic conductive film and has a first surface and a second surface opposite to the first surface. The first glass substrate includes a first circuit layer, a second circuit layer and at least one first conductive via. The first circuit layer is disposed on the first surface. The second circuit layer is disposed on the second surface. The first conductive via penetrates the first glass substrate and is electrically connected to the first circuit layer and the second circuit layer. The first glass substrate and the circuit substrate are respectively located on two opposite sides of the first anisotropic conductive film.

Abstract: An embedded chip package includes a circuit board, a chip, a dielectric material layer, and a build-up circuit structure. The circuit board includes a glass substrate and at least one conductive via. The glass substrate has a first surface, a second surface opposite the first surface, and a through-hole penetrating the glass substrate. The conductive via penetrates the glass substrate. The chip is disposed inside the through-hole. The dielectric material layer is filled inside the through-hole and covers the chip. The build-up circuit structure is disposed on the circuit board. The build-up circuit structure is electrically connected to the conductive via. A lower surface of the chip is exposed outside the dielectric material layer.

Abstract: A manufacturing method of a substrate structure includes the following steps. A first build-up circuit structure is formed. At least one copper pillar is formed on the first build-up circuit structure. A dielectric layer is formed on the first build-up circuit structure, and the dielectric layer wraps the copper pillar. A second build-up circuit structure and a capacitive element are formed on the dielectric layer. In particular, the second build-up circuit structure and the first build-up circuit structure are respectively located at two opposite sides of the dielectric layer. The capacitive element is disposed in a capacitive element setting region within the second build-up circuit structure. The copper pillar penetrates the dielectric layer and is electrically connected to the second build-up circuit structure and the first build-up circuit structure.

Abstract: A manufacturing method of a substrate structure includes the following steps. A first build-up circuit structure is formed. At least one copper pillar is formed on the first build-up circuit structure. A dielectric layer is formed on the first build-up circuit structure, and the dielectric layer wraps the copper pillar. A second build-up circuit structure and a capacitive element are formed on the dielectric layer. In particular, the second build-up circuit structure and the first build-up circuit structure are respectively located at two opposite sides of the dielectric layer. The capacitive element is disposed in a capacitive element setting region within the second build-up circuit structure. The copper pillar penetrates the dielectric layer and is electrically connected to the second build-up circuit structure and the first build-up circuit structure. A substrate structure obtained by the manufacturing method of the substrate structure is provided.

Abstract: A substrate structure includes a glass substrate, a first circuit layer, a second circuit layer, and at least one conductive region. The glass substrate has a first surface and a second surface opposing the first surface. The first circuit layer is disposed on the first surface. The second circuit layer is disposed on the second surface. The conductive region includes a plurality of conductive micro vias. The conductive micro vias penetrate through the glass substrate. The conductive micro vias are electrically connected to the first circuit layer and the second circuit layer, and the conductive micro vias have a via size of 2 ?m to 10 ?m.

Abstract: A composite substrate structure includes a circuit substrate, a first anisotropic conductive film, a first glass substrate, a dielectric layer, a patterned circuit layer and a conductive via. The first anisotropic conductive film is disposed on the circuit substrate. The first glass substrate is disposed on the first anisotropic conductive film and has a first surface and a second surface opposite to the first surface. The first glass substrate includes a first circuit layer, a second circuit layer and at least one first conductive via. The first circuit layer is disposed on the first surface. The second circuit layer is disposed on the second surface. The first conductive via penetrates the first glass substrate and is electrically connected to the first circuit layer and the second circuit layer. The first glass substrate and the circuit substrate are respectively located on two opposite sides of the first anisotropic conductive film.

Abstract: A carrier structure including a glass substrate, a buffer layer, and an inner circuit layer is provided. The glass substrate has a first surface, a second surface opposite to the first surface, and at least one through hole penetrating through the glass substrate. The buffer layer is disposed on the first surface and the second surface of the glass substrate. The inner circuit layer is disposed on the buffer layer and in the through hole of the glass substrate. The inner circuit layer exposes a part of the buffer layer.

Abstract: A light-emitting diode package including a carrier structure, a patterned conductive layer, at least one chip, a dielectric layer, at least one first conductive via, a build-up circuit structure, and at least one light-emitting diode is provided. The patterned conductive layer is disposed on the carrier structure. The chip is disposed on the carrier structure. The dielectric layer is disposed on the carrier structure and encapsulates the chip and the patterned conductive layer. The first conductive via penetrates the dielectric layer and is electrically connected to the patterned conductive layer. The build-up circuit structure is disposed on the dielectric layer and electrically connected to the first conductive via. The light-emitting diode is disposed on the build-up circuit structure.

Abstract: A carrier structure including a glass substrate, a buffer layer, and an inner circuit layer is provided. The glass substrate has a first surface, a second surface opposite to the first surface, and at least one through hole penetrating through the glass substrate. The buffer layer is disposed on the first surface and the second surface of the glass substrate. The inner circuit layer is disposed on the buffer layer and in the through hole of the glass substrate. The inner circuit layer exposes a part of the buffer layer.

Abstract: A chip packaging structure includes a circuit redistribution structure, a chip, a sealing layer, and an antenna pattern. The circuit redistribution structure includes a first and a second circuit layer, and a conductive pad. The second circuit layer is disposed on and electrically connected to the first circuit layer. The conductive pad is electrically connected to the second circuit layer. The chip is disposed on the circuit redistribution structure and electrically connected to the second circuit layer. The sealing layer having an opening and a groove covers the chip and the circuit redistribution structure. The opening exposes the conductive pad. A portion of the groove communicates with the opening. The antenna pattern includes a first and a second portion. The first portion covers sidewalls of the opening and is electrically connected to the conductive pad. The second portion is filled in the groove and electrically connected to the first portion.