Patents by Inventor Chien-Hsien Tseng

Chien-Hsien Tseng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210265408
    Abstract: Various embodiments of the present application are directed to a narrow band filter with high transmission and an image sensor comprising the narrow band filter. In some embodiments, the filter comprises a first distributed Bragg reflector (DBR), a second DBR, a defect layer between the first and second DBRs, and a plurality of columnar structures. The columnar structures extend through the defect layer and have a refractive index different than a refractive index of the defect layer. The first and second DBRs define a low transmission band, and the defect layer defines a high transmission band dividing the low transmission band. The columnar structures shift the high transmission band towards lower or higher wavelengths depending upon a refractive index of the columnar structures and a fill factor of the columnar structures.
    Type: Application
    Filed: April 21, 2021
    Publication date: August 26, 2021
    Inventors: Cheng Yu Huang, Chun-Hao Chuang, Chien-Hsien Tseng, Kazuaki Hashimoto, Keng-Yu Chou, Wei-Chieh Chiang, Wen-Hau Wu
  • Publication number: 20210265414
    Abstract: A BSI image sensor includes a substrate including a front side and a back side opposite to the front side, a pixel sensor disposed in the substrate, and a color filter disposed over the pixel sensor. The pixel sensor includes a plurality of first micro structures disposed over the back side of the substrate. The color filter includes a plurality of second micro structures disposed over the back side of the substrate. The first micro structures are arranged symmetrically to a first axial, and the second micro structures are arranged symmetrically to a second axial.
    Type: Application
    Filed: May 7, 2021
    Publication date: August 26, 2021
    Inventors: WEI-CHIEH CHIANG, KENG-YU CHOU, CHUN-HAO CHUANG, WEN-HAU WU, JHY-JYI SZE, CHIEN-HSIEN TSENG, KAZUAKI HASHIMOTO
  • Patent number: 11037885
    Abstract: Various embodiments of the present application are directed towards a semiconductor packaging device including a shield structure configured to block magnetic and/or electric fields from a first electronic component and a second electronic component. The first and second electronic components may, for example, be inductors or some other suitable electronic components. In some embodiments, a first IC chip overlies a second IC chip. The first IC chip includes a first substrate and a first interconnect structure overlying the first substrate. The second IC chip includes a second substrate and a second interconnect structure overlying the second substrate. The first and second electronic components are respectively in the first and second interconnect structures. The shield structure is directly between the first and second electronic components.
    Type: Grant
    Filed: August 12, 2019
    Date of Patent: June 15, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Wei-Yu Chien, Chien-Hsien Tseng, Dun-Nian Yaung, Nai-Wen Cheng, Pao-Tung Chen, Yi-Shin Chu, Yu-Yang Shen
  • Patent number: 11004887
    Abstract: A BSI image sensor includes a substrate including a front side and a back side opposite to the front side, a pixel sensor disposed in the substrate, and a color filter disposed over the pixel sensor. The pixel sensor includes a plurality of first micro structures disposed over the back side of the substrate. The color filter includes a plurality of second micro structures disposed over the back side of the substrate. Each of the first micro structures has a first height, and each of the second micro structures has a second height. The second height is less than the first height.
    Type: Grant
    Filed: December 13, 2019
    Date of Patent: May 11, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Wei-Chieh Chiang, Keng-Yu Chou, Chun-Hao Chuang, Wen-Hau Wu, Jhy-Jyi Sze, Chien-Hsien Tseng, Kazuaki Hashimoto
  • Patent number: 10991740
    Abstract: Various embodiments of the present application are directed to a narrow band filter with high transmission and an image sensor comprising the narrow band filter. In some embodiments, the filter comprises a first distributed Bragg reflector (DBR), a second DBR, a defect layer between the first and second DBRs, and a plurality of columnar structures. The columnar structures extend through the defect layer and have a refractive index different than a refractive index of the defect layer. The first and second DBRs define a low transmission band, and the defect layer defines a high transmission band dividing the low transmission band. The columnar structures shift the high transmission band towards lower or higher wavelengths depending upon a refractive index of the columnar structures and a fill factor of the columnar structures.
    Type: Grant
    Filed: April 1, 2020
    Date of Patent: April 27, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Cheng Yu Huang, Chun-Hao Chuang, Chien-Hsien Tseng, Kazuaki Hashimoto, Keng-Yu Chou, Wei-Chieh Chiang, Wen-Hau Wu
  • Patent number: 10991739
    Abstract: Various embodiments of the present application are directed to a narrow band filter with high transmission and an image sensor comprising the narrow band filter. In some embodiments, the filter comprises a first distributed Bragg reflector (DBR), a second DBR, a defect layer between the first and second DBRs, and a plurality of columnar structures. The columnar structures extend through the defect layer and have a refractive index different than a refractive index of the defect layer. The first and second DBRs define a low transmission band, and the defect layer defines a high transmission band dividing the low transmission band. The columnar structures shift the high transmission band towards lower or higher wavelengths depending upon a refractive index of the columnar structures and a fill factor of the columnar structures.
    Type: Grant
    Filed: April 1, 2020
    Date of Patent: April 27, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Cheng Yu Huang, Chun-Hao Chuang, Chien-Hsien Tseng, Kazuaki Hashimoto, Keng-Yu Chou, Wei-Chieh Chiang, Wen-Hau Wu
  • Publication number: 20210082787
    Abstract: Various embodiments of the present disclosure are directed towards a semiconductor structure including a first through substrate via (TSV) within a substrate. The first TSV comprises a first doped region extending from a top surface of the substrate to a bottom surface of the substrate. A conductive via overlies the top surface of the substrate and is electrically coupled to the first TSV.
    Type: Application
    Filed: November 30, 2020
    Publication date: March 18, 2021
    Inventors: Yu-Yang Shen, Chien-Hsien Tseng, Dun-Nian Yaung, Nai-Wen Cheng, Pao-Tung Chen
  • Publication number: 20210050303
    Abstract: Various embodiments of the present application are directed towards a semiconductor packaging device including a shield structure configured to block magnetic and/or electric fields from a first electronic component and a second electronic component. The first and second electronic components may, for example, be inductors or some other suitable electronic components. In some embodiments, a first IC chip overlies a second IC chip. The first IC chip includes a first substrate and a first interconnect structure overlying the first substrate. The second IC chip includes a second substrate and a second interconnect structure overlying the second substrate. The first and second electronic components are respectively in the first and second interconnect structures. The shield structure is directly between the first and second electronic components.
    Type: Application
    Filed: August 12, 2019
    Publication date: February 18, 2021
    Inventors: Wei-Yu Chien, Chien-Hsien Tseng, Dun-Nian Yaung, Nai-Wen Cheng, Pao-Tung Chen, Yi-Shin Chu, Yu-Yang Shen
  • Publication number: 20210020670
    Abstract: A BSI image sensor includes a substrate including a front side and a back side opposite to the front side, a plurality of pixel sensors, an isolation grid disposed in the substrate and separating the plurality of pixel sensors from each other, a reflective grid disposed over the isolation grid on the back side of the substrate, an a low-n grid disposed over the back side of the substrate and overlapping the reflective grid from a top view. A width of the low-n grid is greater than a width of the reflective grid.
    Type: Application
    Filed: September 30, 2020
    Publication date: January 21, 2021
    Inventors: KENG-YU CHOU, WEI-CHIEH CHIANG, CHEN-JONG WANG, CHIEN-HSIEN TSENG, KAZUAKI HASHIMOTO
  • Patent number: 10867891
    Abstract: Various embodiments of the present disclosure are directed towards an integrated circuit (IC) including a first through substrate via (TSV) within a first semiconductor substrate. The first semiconductor substrate has a front-side surface and a back-side surface respectively on opposite sides of the first semiconductor substrate. The first semiconductor substrate includes a first doped channel region extending from the front-side surface to the back-side surface. The first through substrate via (TSV) is defined at least by the first doped channel region. A first interconnect structure on the front-side surface of the first semiconductor substrate. The first interconnect structure includes a plurality of first conductive wires and a plurality of first conductive vias, and the first conductive wires and the first conductive vias define a conductive path to the first TSV.
    Type: Grant
    Filed: April 23, 2019
    Date of Patent: December 15, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yu-Yang Shen, Chien-Hsien Tseng, Dun-Nian Yaung, Nai-Wen Cheng, Pao-Tung Chen
  • Patent number: 10797096
    Abstract: A BSI image sensor includes a substrate including a front side and a back side opposite to the front side, a plurality of pixel sensors arranged in an array, an isolation grid disposed in the substrate and separating the plurality of pixel sensors from each other, a reflective grid disposed over the isolation grid on the back side of the substrate, an a low-n grid disposed over the back side of the substrate and overlapping the reflective grid from a top view. A depth of the reflective grid is less than a depth of the isolation grid. A width of the low-n grid is greater than a width of the reflective grid.
    Type: Grant
    Filed: December 6, 2019
    Date of Patent: October 6, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Keng-Yu Chou, Wei-Chieh Chiang, Chen-Jong Wang, Chien-Hsien Tseng, Kazuaki Hashimoto
  • Publication number: 20200235159
    Abstract: In some embodiments, the present disclosure relates to an integrated chip structure. The integrated chip structure includes a first image sensor disposed within a first substrate and a second image sensor disposed within a second substrate. The second substrate has a first side facing the first substrate. The first side includes angled surfaces defining one or more recesses within the first side. A band-pass filter is arranged between the first substrate and the second substrate and is configured to reflect electromagnetic radiation that is within a first range of wavelengths.
    Type: Application
    Filed: April 1, 2020
    Publication date: July 23, 2020
    Inventors: Cheng Yu Huang, Chun-Hao Chuang, Chien-Hsien Tseng, Kazuaki Hashimoto, Keng-Yu Chou, Wei-Chieh Chiang, Wen-Hau Wu
  • Publication number: 20200227460
    Abstract: Various embodiments of the present application are directed to a narrow band filter with high transmission and an image sensor comprising the narrow band filter. In some embodiments, the filter comprises a first distributed Bragg reflector (DBR), a second DBR, a defect layer between the first and second DBRs, and a plurality of columnar structures. The columnar structures extend through the defect layer and have a refractive index different than a refractive index of the defect layer. The first and second DBRs define a low transmission band, and the defect layer defines a high transmission band dividing the low transmission band. The columnar structures shift the high transmission band towards lower or higher wavelengths depending upon a refractive index of the columnar structures and a fill factor of the columnar structures.
    Type: Application
    Filed: April 1, 2020
    Publication date: July 16, 2020
    Inventors: Cheng Yu Huang, Chun-Hao Chuang, Chien-Hsien Tseng, Kazuaki Hashimoto, Keng-Yu Chou, Wei-Chieh Chiang, Wen-Hau Wu
  • Publication number: 20200227461
    Abstract: Various embodiments of the present application are directed to a narrow band filter with high transmission and an image sensor comprising the narrow band filter. In some embodiments, the filter comprises a first distributed Bragg reflector (DBR), a second DBR, a defect layer between the first and second DBRs, and a plurality of columnar structures. The columnar structures extend through the defect layer and have a refractive index different than a refractive index of the defect layer. The first and second DBRs define a low transmission band, and the defect layer defines a high transmission band dividing the low transmission band. The columnar structures shift the high transmission band towards lower or higher wavelengths depending upon a refractive index of the columnar structures and a fill factor of the columnar structures.
    Type: Application
    Filed: April 1, 2020
    Publication date: July 16, 2020
    Inventors: Cheng Yu Huang, Chun-Hao Chuang, Chien-Hsien Tseng, Kazuaki Hashimoto, Keng-Yu Chou, Wei-Chieh Chiang, Wen-Hau Wu
  • Patent number: 10672812
    Abstract: An image sensor includes a color filter array and a light receiving element. The color filter array includes plural repeating unit cells including first, second, and third unit cells. The first and second unit cells are adjacent to each other in a first direction, the second and third unit cells are adjacent to each other in a second direction transverse to the first direction. Each of the first, second, and third unit cells includes at least one first yellow filter configured to transmit a green component and a red component of incident light, and each of the first, second, and third unit cells does not comprise a red filter configured to transmit the red component of the incident light. The light receiving element is configured to convert the incident light transmitted by the color filter array into electric signals.
    Type: Grant
    Filed: July 8, 2019
    Date of Patent: June 2, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Wei-Chieh Chiang, Keng-Yu Chou, Chun-Hao Chuang, Chien-Hsien Tseng, Kazuaki Hashimoto
  • Patent number: 10651225
    Abstract: In some embodiments, the present disclosure relates to a three-dimensional integrated chip. The three-dimensional integrated chip includes a first integrated chip (IC) die and a second IC die. The first IC die has a first image sensor element configured to generate electrical signals from electromagnetic radiation within a first range of wavelengths. The second IC die has a second image sensor element configured to generate electrical signals from electromagnetic radiation within a second range of wavelengths that is different than the first range of wavelengths. A first band-pass filter is arranged between the first IC die and the second IC die and is configured to reflect electromagnetic radiation that is within the first range of wavelengths.
    Type: Grant
    Filed: October 18, 2018
    Date of Patent: May 12, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Cheng Yu Huang, Chun-Hao Chuang, Chien-Hsien Tseng, Kazuaki Hashimoto, Keng-Yu Chou, Wei-Chieh Chiang, Wen-Hau Wu
  • Patent number: 10651220
    Abstract: Various embodiments of the present application are directed to a narrow band filter with high transmission and an image sensor comprising the narrow band filter. In some embodiments, the filter comprises a first distributed Bragg reflector (DBR), a second DBR, a defect layer between the first and second DBRs, and a plurality of columnar structures. The columnar structures extend through the defect layer and have a refractive index different than a refractive index of the defect layer. The first and second DBRs define a low transmission band, and the defect layer defines a high transmission band dividing the low transmission band. The columnar structures shift the high transmission band towards lower or higher wavelengths depending upon a refractive index of the columnar structures and a fill factor of the columnar structures.
    Type: Grant
    Filed: October 10, 2018
    Date of Patent: May 12, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Cheng Yu Huang, Chun-Hao Chuang, Chien-Hsien Tseng, Kazuaki Hashimoto, Keng-Yu Chou, Wei-Chieh Chiang, Wen-Hau Wu
  • Publication number: 20200135617
    Abstract: Various embodiments of the present disclosure are directed towards an integrated circuit (IC) including a first through substrate via (TSV) within a first semiconductor substrate. The first semiconductor substrate has a front-side surface and a back-side surface respectively on opposite sides of the first semiconductor substrate. The first semiconductor substrate includes a first doped channel region extending from the front-side surface to the back-side surface. The first through substrate via (TSV) is defined at least by the first doped channel region. A first interconnect structure on the front-side surface of the first semiconductor substrate. The first interconnect structure includes a plurality of first conductive wires and a plurality of first conductive vias, and the first conductive wires and the first conductive vias define a conductive path to the first TSV.
    Type: Application
    Filed: April 23, 2019
    Publication date: April 30, 2020
    Inventors: Yu-Yang Shen, Chien-Hsien Tseng, Dun-Nian Yaung, Nai-Wen Cheng, Pao-Tung Chen
  • Publication number: 20200119076
    Abstract: A BSI image sensor includes a substrate including a front side and a back side opposite to the front side, a pixel sensor disposed in the substrate, and a color filter disposed over the pixel sensor. The pixel sensor includes a plurality of first micro structures disposed over the back side of the substrate. The color filter includes a plurality of second micro structures disposed over the back side of the substrate. Each of the first micro structures has a first height, and each of the second micro structures has a second height. The second height is less than the first height.
    Type: Application
    Filed: December 13, 2019
    Publication date: April 16, 2020
    Inventors: WEI-CHIEH CHIANG, KENG-YU CHOU, CHUN-HAO CHUANG, WEN-HAU WU, JHY-JYI SZE, CHIEN-HSIEN TSENG, KAZUAKI HASHIMOTO
  • Publication number: 20200111822
    Abstract: A BSI image sensor includes a substrate including a front side and a back side opposite to the front side, a plurality of pixel sensors arranged in an array, an isolation grid disposed in the substrate and separating the plurality of pixel sensors from each other, a reflective grid disposed over the isolation grid on the back side of the substrate, an a low-n grid disposed over the back side of the substrate and overlapping the reflective grid from a top view. A depth of the reflective grid is less than a depth of the isolation grid. A width of the low-n grid is greater than a width of the reflective grid.
    Type: Application
    Filed: December 6, 2019
    Publication date: April 9, 2020
    Inventors: Keng-Yu Chou, Wei-Chieh Chiang, Chen-Jong Wang, Chien-Hsien Tseng, Kazuaki Hashimoto