Abstract: Various embodiments of the present application are directed to a narrow band filter with high transmission and an image sensor comprising the narrow band filter. In some embodiments, the filter comprises a first distributed Bragg reflector (DBR), a second DBR, a defect layer between the first and second DBRs, and a plurality of columnar structures. The columnar structures extend through the defect layer and have a refractive index different than a refractive index of the defect layer. The first and second DBRs define a low transmission band, and the defect layer defines a high transmission band dividing the low transmission band. The columnar structures shift the high transmission band towards lower or higher wavelengths depending upon a refractive index of the columnar structures and a fill factor of the columnar structures.

Abstract: Various embodiments of the present disclosure are directed towards a semiconductor structure including a first through substrate via (TSV) within a substrate. The first TSV comprises a first doped region extending from a top surface of the substrate to a bottom surface of the substrate. A conductive via overlies the top surface of the substrate and is electrically coupled to the first TSV.

Abstract: Various embodiments of the present application are directed towards a semiconductor packaging device including a shield structure configured to block magnetic and/or electric fields from a first electronic component and a second electronic component. The first and second electronic components may, for example, be inductors or some other suitable electronic components. In some embodiments, a first IC chip overlies a second IC chip. The first IC chip includes a first substrate and a first interconnect structure overlying the first substrate. The second IC chip includes a second substrate and a second interconnect structure overlying the second substrate. The first and second electronic components are respectively in the first and second interconnect structures. The shield structure is directly between the first and second electronic components.

Abstract: A BSI image sensor includes a substrate including a front side and a back side opposite to the front side, a plurality of pixel sensors, an isolation grid disposed in the substrate and separating the plurality of pixel sensors from each other, a reflective grid disposed over the isolation grid on the back side of the substrate, an a low-n grid disposed over the back side of the substrate and overlapping the reflective grid from a top view. A width of the low-n grid is greater than a width of the reflective grid.

Abstract: Various embodiments of the present disclosure are directed towards an integrated circuit (IC) including a first through substrate via (TSV) within a first semiconductor substrate. The first semiconductor substrate has a front-side surface and a back-side surface respectively on opposite sides of the first semiconductor substrate. The first semiconductor substrate includes a first doped channel region extending from the front-side surface to the back-side surface. The first through substrate via (TSV) is defined at least by the first doped channel region. A first interconnect structure on the front-side surface of the first semiconductor substrate. The first interconnect structure includes a plurality of first conductive wires and a plurality of first conductive vias, and the first conductive wires and the first conductive vias define a conductive path to the first TSV.

Abstract: A BSI image sensor includes a substrate including a front side and a back side opposite to the front side, a plurality of pixel sensors arranged in an array, an isolation grid disposed in the substrate and separating the plurality of pixel sensors from each other, a reflective grid disposed over the isolation grid on the back side of the substrate, an a low-n grid disposed over the back side of the substrate and overlapping the reflective grid from a top view. A depth of the reflective grid is less than a depth of the isolation grid. A width of the low-n grid is greater than a width of the reflective grid.

Abstract: In some embodiments, the present disclosure relates to an integrated chip structure. The integrated chip structure includes a first image sensor disposed within a first substrate and a second image sensor disposed within a second substrate. The second substrate has a first side facing the first substrate. The first side includes angled surfaces defining one or more recesses within the first side. A band-pass filter is arranged between the first substrate and the second substrate and is configured to reflect electromagnetic radiation that is within a first range of wavelengths.

Abstract: Various embodiments of the present application are directed to a narrow band filter with high transmission and an image sensor comprising the narrow band filter. In some embodiments, the filter comprises a first distributed Bragg reflector (DBR), a second DBR, a defect layer between the first and second DBRs, and a plurality of columnar structures. The columnar structures extend through the defect layer and have a refractive index different than a refractive index of the defect layer. The first and second DBRs define a low transmission band, and the defect layer defines a high transmission band dividing the low transmission band. The columnar structures shift the high transmission band towards lower or higher wavelengths depending upon a refractive index of the columnar structures and a fill factor of the columnar structures.

Abstract: Various embodiments of the present application are directed to a narrow band filter with high transmission and an image sensor comprising the narrow band filter. In some embodiments, the filter comprises a first distributed Bragg reflector (DBR), a second DBR, a defect layer between the first and second DBRs, and a plurality of columnar structures. The columnar structures extend through the defect layer and have a refractive index different than a refractive index of the defect layer. The first and second DBRs define a low transmission band, and the defect layer defines a high transmission band dividing the low transmission band. The columnar structures shift the high transmission band towards lower or higher wavelengths depending upon a refractive index of the columnar structures and a fill factor of the columnar structures.

Abstract: An image sensor includes a color filter array and a light receiving element. The color filter array includes plural repeating unit cells including first, second, and third unit cells. The first and second unit cells are adjacent to each other in a first direction, the second and third unit cells are adjacent to each other in a second direction transverse to the first direction. Each of the first, second, and third unit cells includes at least one first yellow filter configured to transmit a green component and a red component of incident light, and each of the first, second, and third unit cells does not comprise a red filter configured to transmit the red component of the incident light. The light receiving element is configured to convert the incident light transmitted by the color filter array into electric signals.

Abstract: Various embodiments of the present application are directed to a narrow band filter with high transmission and an image sensor comprising the narrow band filter. In some embodiments, the filter comprises a first distributed Bragg reflector (DBR), a second DBR, a defect layer between the first and second DBRs, and a plurality of columnar structures. The columnar structures extend through the defect layer and have a refractive index different than a refractive index of the defect layer. The first and second DBRs define a low transmission band, and the defect layer defines a high transmission band dividing the low transmission band. The columnar structures shift the high transmission band towards lower or higher wavelengths depending upon a refractive index of the columnar structures and a fill factor of the columnar structures.

Abstract: In some embodiments, the present disclosure relates to a three-dimensional integrated chip. The three-dimensional integrated chip includes a first integrated chip (IC) die and a second IC die. The first IC die has a first image sensor element configured to generate electrical signals from electromagnetic radiation within a first range of wavelengths. The second IC die has a second image sensor element configured to generate electrical signals from electromagnetic radiation within a second range of wavelengths that is different than the first range of wavelengths. A first band-pass filter is arranged between the first IC die and the second IC die and is configured to reflect electromagnetic radiation that is within the first range of wavelengths.

Abstract: Various embodiments of the present disclosure are directed towards an integrated circuit (IC) including a first through substrate via (TSV) within a first semiconductor substrate. The first semiconductor substrate has a front-side surface and a back-side surface respectively on opposite sides of the first semiconductor substrate. The first semiconductor substrate includes a first doped channel region extending from the front-side surface to the back-side surface. The first through substrate via (TSV) is defined at least by the first doped channel region. A first interconnect structure on the front-side surface of the first semiconductor substrate. The first interconnect structure includes a plurality of first conductive wires and a plurality of first conductive vias, and the first conductive wires and the first conductive vias define a conductive path to the first TSV.

Abstract: A BSI image sensor includes a substrate including a front side and a back side opposite to the front side, a pixel sensor disposed in the substrate, and a color filter disposed over the pixel sensor. The pixel sensor includes a plurality of first micro structures disposed over the back side of the substrate. The color filter includes a plurality of second micro structures disposed over the back side of the substrate. Each of the first micro structures has a first height, and each of the second micro structures has a second height. The second height is less than the first height.

Abstract: A BSI image sensor includes a substrate including a front side and a back side opposite to the front side, a plurality of pixel sensors arranged in an array, an isolation grid disposed in the substrate and separating the plurality of pixel sensors from each other, a reflective grid disposed over the isolation grid on the back side of the substrate, an a low-n grid disposed over the back side of the substrate and overlapping the reflective grid from a top view. A depth of the reflective grid is less than a depth of the isolation grid. A width of the low-n grid is greater than a width of the reflective grid.

Abstract: In some embodiments, the present disclosure relates to a three-dimensional integrated chip. The three-dimensional integrated chip includes a first integrated chip (IC) die and a second IC die. The first IC die has a first image sensor element configured to generate electrical signals from electromagnetic radiation within a first range of wavelengths. The second IC die has a second image sensor element configured to generate electrical signals from electromagnetic radiation within a second range of wavelengths that is different than the first range of wavelengths. A first band-pass filter is arranged between the first IC die and the second IC die and is configured to reflect electromagnetic radiation that is within the first range of wavelengths.

Abstract: The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip has an image sensor within a substrate. A first dielectric has an upper surface that extends over a first side of the substrate and over one or more trenches within the first side of the substrate. The one or more trenches laterally surround the image sensor. An internal reflection structure arranged over the upper surface of the first dielectric. The internal reflection structure is configured to reflect radiation exiting from the substrate back into the substrate.

Abstract: In some embodiments, an image sensor is provided. The image sensor includes a photodetector disposed in a semiconductor substrate. A wave guide filter having a substantially planar upper surface is disposed over the photodetector. The wave guide filter includes a light filter disposed in a light filter grid structure. The light filter includes a first material that is translucent and has a first refractive index. The light filter grid structure includes a second material that is translucent and has a second refractive index less than the first refractive index.

Abstract: A BSI image sensor includes a substrate including a front side and a back side opposite to the front side, a pixel sensor disposed in the substrate, an isolation structure surrounding the pixel sensor and disposed in the substrate, a dielectric layer disposed over the pixel sensor on the front side of the substrate, and a plurality of conductive structures disposed in the dielectric layer and arranged to align with the isolation structure.

Abstract: Various embodiments of the present application are directed to a narrow band filter with high transmission and an image sensor comprising the narrow band filter. In some embodiments, the filter comprises a first distributed Bragg reflector (DBR), a second DBR, a defect layer between the first and second DBRs, and a plurality of columnar structures. The columnar structures extend through the defect layer and have a refractive index different than a refractive index of the defect layer. The first and second DBRs define a low transmission band, and the defect layer defines a high transmission band dividing the low transmission band. The columnar structures shift the high transmission band towards lower or higher wavelengths depending upon a refractive index of the columnar structures and a fill factor of the columnar structures.