Abstract: An optical filter and a matching composite layer thereof are provided. The matching composite layer includes a plurality of first refraction layers, a plurality of second refraction layers, and a plurality of third refraction layers. A refractive index of the second refraction layer is greater than that of the first refraction layer, and is less than that of the third refraction layer. Any two of the second refraction layers provided with one of the first refraction layers sandwiched there-between are sandwiched between two of the third refraction layers so as to be jointly defined as a bidirectional incremental module. A number of the bidirectional incremental module included in the matching composite layer is at least M, where M is a positive integer greater than three. The M number of the bidirectional incremental modules are stacked and connected with each other.

Abstract: The present disclosure provides a voice coil structure, a method for manufacturing the voice coil structure, and a loudspeaker. The voice coil structure includes a first insulation layer, a first wiring layer, a second insulation layer, at least one second wiring layer, and a third insulation layer. The second insulation layer extends to wiring gaps of the first wiring layer. The third insulation layer extends to wiring gaps of the at least one second wiring layer. Each of the first wiring layer and the at least one second wiring layer has a winding structure. The first wiring layer is electrically connected in series or in parallel with the at least one second wiring layer and forming two output terminals.

Abstract: A semiconductor structure includes a substrate, an isolation structure disposed in the substrate, and a hybrid structure disposed over the isolation structure. The hybrid structure is substantially conformal with respect to a profile of the isolation structure. The hybrid structure includes an oxide component, a nitride component surrounding the oxide component, and a first polysilicon component alongside the nitride component. The nitride component includes a first upper surface closed to the first polysilicon component, and a second upper surface distal to the first polysilicon component. The second upper surface is lower than the first upper surface.

Abstract: A method of predicting an effect of a chemotherapy treatment on a cancer patient's cognitive status using the patient's predicted age difference (PAD) comprises acquiring at least one medical brain image of a patient's brain before a chemotherapy treatment; processing the medical brain image to obtain at least one feature of the image; generating a PAD value of the individual based on the at least one feature of the image; and predicting an effect of the chemotherapy treatment on a cancer patient's cognitive status using the PAD value.

Abstract: A semiconductor device includes an application processor (AP) die and a memory die directly bonded to the AP die. The memory die includes a substrate, a non-volatile memory structure on the substrate, and at least one trench capacitor in the substrate.

Abstract: A missing data compensation method, missing data compensation system and non-transitory computer-readable medium are provided in this disclosure. The method includes the following operations: inputting a sensing signal by a sensor; searching for a historical data sections similar to a first data section from the plurality of historical data sections to generate a plurality of candidate data sections; calculating a plurality of data relation diagrams according to the first data section and the candidate data sections, respectively; utilizing a feature recognition model to calculate a plurality of similarity values according to the data relation diagrams; selecting a candidate data section corresponding to the maximum similarity value as a sample data section; and utilizing the data in the sample data section to compensate the data in the first data section to generate compensated data section.

Abstract: A missing data compensation method, missing data compensation system and non-transitory computer-readable medium are provided in this disclosure. The method includes the following operations: inputting a sensing signal by a sensor; searching for a historical data sections similar to a first data section from the plurality of historical data sections to generate a plurality of candidate data sections; calculating a plurality of data relation diagrams according to the first data section and the candidate data sections, respectively; utilizing a feature recognition model to calculate a plurality of similarity values according to the data relation diagrams; selecting a candidate data section corresponding to the maximum similarity value as a sample data section; and utilizing the data in the sample data section to compensate the data in the first data section to generate compensated data section.

Abstract: A device recommendation system includes an environmental monitoring module, a device monitoring module, an abnormality monitoring module and a decision module. The environmental monitoring module receives environmental data obtained by environmental sensors and generates environmental history data accordingly. The device monitoring module retrieves enablement counts from electronic devices and generates enablement history data accordingly. The abnormality monitoring module determines whether the environmental data exceeds a threshold in a first time section and generates an abnormal signal accordingly. According to the abnormal signal, the decision module calculates the environmental history data based on an initial weight matrix to generate a recommendation data used to change the enablement status of the electronic devices.

Abstract: A semiconductor device includes a semiconductor substrate and a pair of first well regions formed in the semiconductor substrate, wherein the pair of first well regions have a first conductivity type and are separated by at least one portion of the semiconductor substrate. The semiconductor device also includes a first doping region formed in a portion of at least one portion of the semiconductor substrate separating the pair of first well regions, and a pair of second doping regions, respectively formed in one of the pair of first well regions, having the first conductivity type. Further, the semiconductor device includes a pair of insulating layers, respectively formed over a portion of the semiconductor substrate to cover a portion of the first doped region and one of the pair of second doping regions.

Abstract: The present invention provides a semiconductor capacitor structure. The semiconductor capacitor structure comprises a first metal layer, a second metal layer and a first dielectric layer. The first metal layer is arranged to be a part of a first electrode of the semiconductor capacitor structure, and the first metal layer comprises a first portion and a second portion. The first portion is formed to have a first pattern, and the second portion is connected to the first portion. The second metal layer is arranged to be a part of a second electrode of the semiconductor capacitor structure, and the first dielectric layer is formed between the first metal layer and the second metal layer.

Abstract: A semiconductor device includes a semiconductor substrate and a pair of first well regions formed in the semiconductor substrate, wherein the pair of first well regions have a first conductivity type and are separated by at least one portion of the semiconductor substrate. The semiconductor device also includes a first doping region formed in a portion of at least one portion of the semiconductor substrate separating the pair of first well regions, and a pair of second doping regions, respectively formed in one of the pair of first well regions, having the first conductivity type. Further, the semiconductor device includes a pair of insulating layers, respectively formed over a portion of the semiconductor substrate to cover a portion of the first doped region and one of the pair of second doping regions.

Abstract: An electrostatic discharge (ESD) protection device includes a semiconductor substrate and a pair of first well regions formed in the semiconductor substrate, wherein the pair of first well regions have a first conductivity type and are separated by at least one portion of the semiconductor substrate. In addition, the ESD protection device further includes a first doping region formed in a portion of the at least one portion of the semiconductor substrate separating the pair of first well regions, having a second conductivity type opposite to the first conductivity type. Moreover, the ESD protection device further includes a pair of second doping regions respectively formed in one of the first well regions, having the first conductivity type, and a pair of insulating layers respectively formed over a portion of the semiconductor substrate to cover a portion of the first doped region and one of the second doping regions.

Abstract: An electrostatic discharge (ESD) protection device includes a semiconductor substrate and a pair of first well regions formed in the semiconductor substrate, wherein the pair of first well regions have a first conductivity type and are separated by at least one portion of the semiconductor substrate. In addition, the ESD protection device further includes a first doping region formed in a portion of the at least one portion of the semiconductor substrate separating the pair of first well regions, having a second conductivity type opposite to the first conductivity type. Moreover, the ESD protection device further includes a pair of second doping regions respectively formed in one of the first well regions, having the first conductivity type, and a pair of insulating layers respectively formed over a portion of the semiconductor substrate to cover a portion of the first doped region and one of the second doping regions.

Abstract: The present invention provides a semiconductor capacitor structure. The semiconductor capacitor structure comprises a first metal layer, a second metal layer and a first dielectric layer. The first metal layer is arranged to be a part of a first electrode of the semiconductor capacitor structure, and the first metal layer comprises a first portion and a second portion. The first portion is formed to have a first pattern, and the second portion is connected to the first portion. The second metal layer is arranged to be a part of a second electrode of the semiconductor capacitor structure, and the first dielectric layer is formed between the first metal layer and the second metal layer.

Abstract: A method and apparatus for alignment are disclosed. An exemplary apparatus includes a substrate having an alignment region; an alignment feature in the alignment region of the substrate; and a dummy feature disposed within the alignment feature. A dimension of the dummy feature is less than a resolution of an alignment mark detector.

Abstract: A method and apparatus for alignment are disclosed. An exemplary apparatus includes a substrate having an alignment region; an alignment feature in the alignment region of the substrate; and a dummy feature disposed within the alignment feature. A dimension of the dummy feature is less than a resolution of an alignment mark detector.

Abstract: A springless shooting dart composed of a hollow cylinder, a shuttle, a rope, and a dart is provided. Inside the hollow cylinder is a shuttle. A dart can be disposed at the front end of the shuttle. The shuttle is connected to a rope having one end tied to the user's waist. A user can control the dart to be shot out by holding on to the cylinder and extending from his arm.

Abstract: A chair adjustable device includes a base with which a seat frame and a backrest frame are respectively and pivotably connected. A positioning mechanism is connected to the base and includes an operation handle which is able to shift a transmission frame and a positioning plate is movably connected to the transmission frame and biased by a spring, so that the positioning plate can be movably engaged with one of notches defined in a positioning member on the seat frame. The seat frame and the backrest frame are connected by a connection member so that the chair can be adjusted its tilt angle by operating the operation handle.

Abstract: A pressing board operation mechanism for paper cutter includes an eccentric driving rod to pivot a first link assembly composed of two pairs of triangular plates and the first link assembly is connected to a second link assembly which includes a rack member, two first links and two second links. The two first links are operationally connected to the rack member by two respective rack ends and the two second links are pivotably connected between the first links and the pressing board which is lowered or lifted by the pivotal movement of the first and second links. Two sensors are provided and activated when the first link assembly is moved to a pre-set positions and the sensors send commands to stop the motor.

Abstract: A chair adjustable device includes a base with which a seat frame and a backrest frame are respectively and pivotably connected. A positioning mechanism is connected to the base and includes an operation handle which is able to shift a transmission frame and a positioning plate is movably connected to the transmission frame and biased by a spring, so that the positioning plate can be movably engaged with one of notches defined in a positioning member on the seat frame. The seat frame and the backrest frame are connected by a connection member so that the chair can be adjusted its tilt angle by operating the operation handle.