Abstract: An electronic device is provided. The electronic device includes a first dielectric layer, an electronic element, an encapsulant, and a second dielectric layer. The first dielectric layer has a first coefficient of thermal expansion (CTE). The electronic element is disposed over the first dielectric layer. The encapsulant encapsulates the electronic element and has a second CTE. The second dielectric layer is disposed over the encapsulant and having a third CTE. The second CTE ranges between the first CTE and the third CTE.

Abstract: The present disclosure provides a semiconductor device package. The semiconductor device package includes a first die, a second die, and a thermal dissipation element. The first die has a first surface. The second die is disposed on the first surface. The thermal dissipation element is disposed on the first surface. The thermal dissipation element includes a first portion extending in a first direction substantially parallel to the first surface and partially covered by the second die and a second portion extending in a second direction substantially perpendicular to the first surface to be adjacent to an edge of the second die.

Abstract: The present disclosure provides a semiconductor device package. The semiconductor device package includes a first die, a second die, and a thermal dissipation element. The first die has a first surface. The second die is disposed on the first surface. The thermal dissipation element is disposed on the first surface. The thermal dissipation element includes a first portion extending in a first direction substantially parallel to the first surface and partially covered by the second die and a second portion extending in a second direction substantially perpendicular to the first surface to be adjacent to an edge of the second die.

Abstract: A semiconductor device package includes a plurality of semiconductor chips and an interposer structure. The interposer structure has a plurality of tiers for accommodating the plurality of semiconductor chips. The interposer structure includes at least one conductive via connecting to a pad of the plurality of semiconductor chips.

Abstract: A method of manufacturing a semiconductor package includes: (a) providing a carrier; (b) disposing a dielectric layer and a conductive pad on the carrier; (c) disposing a redistribution layer on the dielectric layer to electrically connect to the conductive pad; (d) connecting a die to the redistribution layer; (e) removing at least a portion of the carrier to expose the conductive pad; and (f) disposing an electrical contact to electrically connect to the conductive pad.

Abstract: An electronic apparatus includes a substrate structure, a plurality of pillar bases, at least one light emitting device and a plurality of electrically connective materials. The substrate structure has a top surface and a bottom surface opposite to the top surface, and included a non III-V group material. The pillar bases are disposed adjacent to the top surface of the substrate structure. The light emitting device includes a III-V group material, and comprises a plurality of electrode pads. The electrically connective materials are interposed between the electrode pads of the light emitting device and the pillar bases.

Abstract: A semiconductor package device includes a first interconnection structure, a non-silicon interposer and a first die. The first interconnection structure has a first pitch. The non-silicon interposer surrounds the first interconnection structure. The non-silicon interposer includes a second interconnection structure having a second pitch. The second pitch is larger than the first pitch. The first die is above the first interconnection structure and is electrically connected to the first interconnection structure.

Abstract: A semiconductor package device includes a first interconnection structure, a non-silicon interposer and a first die. The first interconnection structure has a first pitch. The non-silicon interposer surrounds the first interconnection structure. The non-silicon interposer includes a second interconnection structure having a second pitch. The second pitch is larger than the first pitch. The first die is above the first interconnection structure and is electrically connected to the first interconnection structure.

Abstract: A semiconductor device package includes a package substrate, a first electronic device, a second electronic device and a first molding layer. The package substrate includes a first surface, a second surface opposite to the first surface, and an edge. The first electronic device is positioned over and electrically connected to the package substrate through the first surface. The second electronic device is positioned over and electrically connected to the first electronic device. The first molding layer is positioned over the package substrate, and the first molding layer encapsulates a portion of the first surface and the edge of the package substrate.

Abstract: A method of manufacturing a semiconductor package includes: (a) providing a carrier; (b) disposing a dielectric layer and a conductive pad on the carrier; (c) disposing a redistribution layer on the dielectric layer to electrically connect to the conductive pad; (d) connecting a die to the redistribution layer; (e) removing at least a portion of the carrier to expose the conductive pad; and (f) disposing an electrical contact to electrically connect to the conductive pad.

Abstract: In one or more embodiments, a semiconductor package includes a redistribution layer, a conductive pad, a dielectric layer, a silicon layer, and a conductive contact. The redistribution layer includes a first surface and a second surface opposite to the first surface. The conductive pad is on the first surface of the redistribution layer. The dielectric layer is disposed on the first surface of the redistribution layer to cover a first portion of the conductive pad and to expose a second portion of the conductive pad. The silicon layer is disposed on the dielectric layer, the silicon layer having a recess to expose the second portion of the conductive pad. The conductive contact is disposed over the silicon layer and extends into the recess of the silicon layer.

Abstract: A semiconductor device package includes a package substrate, a first electronic device, a second electronic device and a first molding layer. The package substrate includes a first surface, a second surface opposite to the first surface, and an edge. The first electronic device is positioned over and electrically connected to the package substrate through the first surface. The second electronic device is positioned over and electrically connected to the first electronic device. The first molding layer is positioned over the package substrate, and the first molding layer encapsulates a portion of the first surface and the edge of the package substrate.

Abstract: In one or more embodiments, a semiconductor package includes a redistribution layer, a conductive pad, a dielectric layer, a silicon layer, and a conductive contact. The redistribution layer includes a first surface and a second surface opposite to the first surface. The conductive pad is on the first surface of the redistribution layer. The dielectric layer is disposed on the first surface of the redistribution layer to cover a first portion of the conductive pad and to expose a second portion of the conductive pad. The silicon layer is disposed on the dielectric layer, the silicon layer having a recess to expose the second portion of the conductive pad. The conductive contact is disposed over the silicon layer and extends into the recess of the silicon layer.

Abstract: A light emitting diode package includes a substrate, several light emitting diodes mounted on the substrate, and a package member enveloping the light emitting diodes. The light emitting diodes are electrically coupled to the substrate. The package member includes at least two layers, the first layer and the second layer. The first layer is spread on the substrate and completely covers the light emitting diodes and the wires. The second layer is formed on the first layer. Fluidity of colloid forming the second layer is worse than that of the first layer. A method is also provided to manufacture the present light emitting diode package.

Abstract: An light emitting diode (LED) module includes a circuit board, a plurality of LED chips arranged on and electrically connected to the circuit board, and an encapsulant arranged on the circuit board and covering the LED chips, a plurality of first recesses defined in a first surface of the circuit board.

Abstract: A light emitting diode package includes a substrate, several light emitting diodes mounted on the substrate, and a package member enveloping the light emitting diodes. The light emitting diodes are electrically coupled to the substrate. The package member includes at least two layers, the first layer and the second layer. The first layer is spread on the substrate and completely covers the light emitting diodes and the wires. The second layer is formed on the first layer. Fluidity of colloid forming the second layer is worse than that of the first layer. A method is also provided to manufacture the present light emitting diode package.

Abstract: An light emitting diode (LED) module includes a circuit board, a set of LED chips formed on and electrically connected to the circuit board, and an encapsulant arranged on the circuit board and covering the LED chips, a set of first recesses defined in a top surface of the encapsulant.

Abstract: An exemplary light emitting device includes a blue-green light source and a orange-red light source. The blue-green light source emits blue-green light and the orange-red light source emits orange-red light when they are activated. The blue-green light and the orange-red light are mixed together to obtain white light.

Abstract: An LED light emitting apparatus includes an LED light source, a light guiding device and an emitting window. The emitting window is covered with a phosphor layer. Light emitted directly from the LED light source is first transmitted to the light guiding device and then guided by the light guiding device towards the emitting window to evenly excite the phosphor layer.

Abstract: A light emitting diode (LED) package includes a substrate with a flat top surface, an LED chip mounted on the substrate, and a group of blocking structure and encapsulation body. The LED chip electrically connects with the substrate. The blocking structure surrounds the LED chip. The encapsulation body covers the LED chip. A bottom of the encapsulation body is enclosed by the blocking structure; the encapsulation body has a light outputting surface, and an outer surface of the blocking structure is continuously connected with the light outputting surface. The light outputting surface has a semispherical profile. An angle between a normal line extending from the outer surface of the blocking structure and perpendicular to the substrate and a tangent line tangent to the light outputting surface at a point thereof adjacent to the outer surface is smaller than 60 degrees.