Patents by Inventor Chien Sen Weng

Chien Sen Weng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20180024513
    Abstract: In a data management system, a host is configured to send a data access request to a target measurement device among a plurality of measurement devices using a USB dongle. When the USB dongle is unable to receive data from the target measurement device within a predetermined period of time, the host determines that a connection interruption has occurred and releases the connection resource of the USB dongle.
    Type: Application
    Filed: June 21, 2017
    Publication date: January 25, 2018
    Inventors: Hao-Chun Tung, Chen-Chen Tsai, Chien-Sen Weng, Yung-Ti Wang
  • Patent number: 8415182
    Abstract: A manufacturing method of a thin film transistor array substrate is provided. In the method, a substrate having a display region and a sensing region is provided. At least a display thin film transistor is formed in the display region, a first sensing electrode is formed in the sensing region, and an inter-layer dielectric layer is disposed on the substrate, covers the display thin film transistor, and exposes the first sensing electrode. A patterned photo sensitive dielectric layer is then formed on the first sensing electrode. A patterned transparent conductive layer is subsequently formed on the substrate, wherein the patterned transparent conductive layer includes a pixel electrode coupled to the corresponding display thin film transistor and includes a second sensing electrode located on the patterned photo sensitive dielectric layer. A manufacturing method of a liquid crystal display panel adopting the aforementioned thin film transistor array substrate is also provided.
    Type: Grant
    Filed: December 22, 2009
    Date of Patent: April 9, 2013
    Assignee: Au Optronics Corporation
    Inventors: An-Thung Cho, Chia-Tien Peng, Yuan-Jun Hsu, Ching-Chieh Shih, Chien-Sen Weng, Kun-Chih Lin, Hang-Wei Tseug, Ming-Huang Chuang
  • Patent number: 8373179
    Abstract: A LED chip including a substrate, a semiconductor device layer, a current blocking layer, a current spread layer, a first electrode and a second electrode is provided. The semiconductor device layer is disposed on the substrate. The current blocking layer is disposed on a part of the semiconductor device layer and includes a current blocking segment and a current distribution adjusting segment. The current spread layer is disposed on a part of the semiconductor device layer and covers the current blocking layer. The first electrode is disposed on the current spread layer, wherein a part of the current blocking segment is overlapped with the first electrode. Contours of the current blocking segment and the first electrode are similar figures. Contour of the first electrode and is within contour of the current blocking segment. The current distribution adjusting segment is not overlapped with the first electrode.
    Type: Grant
    Filed: June 14, 2011
    Date of Patent: February 12, 2013
    Assignee: Lextar Electronics Corp.
    Inventors: Kuo-Lung Fang, Chien-Sen Weng, Chih-Wei Chao
  • Publication number: 20130029476
    Abstract: A dicing process is provided for cutting a wafer along a plurality of predetermined scribe lines into a plurality of dies that are releasably adhered to a release film. The dicing process includes: (a) disposing a wafer-breaking carrier on a supporting device, the wafer-breaking carrier having a chipping unit; (b) disposing the wafer above the supporting device such that the chipping unit is at a position corresponding to the scribe lines; and (c) adhering a release surface of the release film to the wafer by applying a force to the release film to contact the chipping unit of the wafer-breaking carrier with the wafer, such that the wafer is split along the scribe lines into the dies.
    Type: Application
    Filed: July 3, 2012
    Publication date: January 31, 2013
    Applicant: LEXTAR ELECTRONICS CORP.
    Inventors: Chien-Sen WENG, Mong-Yeng Xing, Yu-Ching Chang, Wei-Chang Yu, Yao-Hui Lin
  • Patent number: 8329487
    Abstract: In a fabricating method of an LED, a first-type doped semiconductor material layer, a light emitting material layer, and a second-type doped semiconductor material layer are sequentially formed on a substrate. The first-type and second-type doped semiconductor material layers and the light emitting material layer are patterned to form a first-type doped semiconductor layer, an active layer, and a second-type doped semiconductor layer. The active layer is disposed on a portion of the first-type doped semiconductor layer. The second-type doped semiconductor layer is disposed on the active layer and has a first top surface. A wall structure is formed on the first-type doped semiconductor layer that is not covered by the active layer, and the wall structure surrounds the active layer and has a second top surface higher than the first top surface of the second-type doped semiconductor layer. Electrodes are formed on the first-type and second-type doped semiconductor layers.
    Type: Grant
    Filed: November 1, 2010
    Date of Patent: December 11, 2012
    Assignee: Lextar Electronics Corp.
    Inventors: Kuo-Lung Fang, Chien-Sen Weng, Chih-Wei Chao
  • Patent number: 8314898
    Abstract: A display device includes a first substrate, a heating layer formed on the first substrate, an insulating layer having a first opening formed on the heating layer, at least one switching device, two contact pads formed on the insulating layer, and respectively electrically connected to the scan line and the data line, a capacitor, a passivation layer covering the switching device and the capacitor, and a pixel electrode formed on the passivation layer and electrically connected to the drain of the switching device. The source of the switching device is connected to the data line. The passivation layer has a plurality of second openings exposing the contact pads.
    Type: Grant
    Filed: March 18, 2011
    Date of Patent: November 20, 2012
    Assignee: AU Optronics Corp.
    Inventors: Mao-Yi Chang, Chia-Tien Peng, Chih-Wei Chao, Chien-Sen Weng, Chao-Shun Liao
  • Patent number: 8283188
    Abstract: A method for fabricating a light emitting diode chip is provided. Firstly, a semiconductor device layer is formed on a substrate. Afterwards, a current spreading layer is formed on a portion of the semiconductor device layer. Then, a current blocking layer and a passivation layer are formed on a portion of the semiconductor device layer not covered by the current spreading layer. Finally, a first electrode is formed on the current blocking layer and the current spreading layer. Moreover, a second electrode is formed on the semiconductor device layer.
    Type: Grant
    Filed: August 30, 2011
    Date of Patent: October 9, 2012
    Assignee: Lextar Electronics Corp.
    Inventors: Kuo-Lung Fang, Chien-Sen Weng, Chih-Wei Chao
  • Patent number: 8232978
    Abstract: An optical reflective touch panel and pixels and a system thereof are provided. Each pixel of the optical reflective touch panel includes a display circuit and a sensing circuit. The display circuit controls the display of the pixel. The sensing circuit is coupled to the display circuit for sensing a sensitization state of the pixel during a turned-on period and a turned-off period of a backlight module and outputting a digital signal to notify an optical reflective touch panel system that whether the pixel is touched or not.
    Type: Grant
    Filed: May 14, 2009
    Date of Patent: July 31, 2012
    Assignee: Au Optronics Corporation
    Inventors: Wen-Jen Chiang, An-Thung Cho, Chrong-Jung Lin, Chia-Tien Peng, Ya-Chin King, Kun-Chih Lin, Chih-Wei Chao, Chien-Sen Weng, Feng-Yuan Gan
  • Publication number: 20120160227
    Abstract: A wafer splitting apparatus suitable for splitting a plurality of chip regions of a wafer into a plurality of independent dice is provided. The wafer splitting apparatus includes a splitting knife body and at least a vibrating hammer. The splitting knife body is disposed at one side of the wafer, and has a first surface facing the wafer. The first surface stretches over a plurality of chip regions in all extending directions of the first surface passing through a center of the first surface. The splitting knife body is disposed between the wafer and the vibrating hammer, and the vibrating hammer is suitable for knocking the splitting knife body in a direction toward the wafer to make the splitting knife body move toward the wafer, so as to split the chip regions of the wafer into a plurality of independent dice. A wafer splitting process is also provided.
    Type: Application
    Filed: March 9, 2011
    Publication date: June 28, 2012
    Applicant: LEXTAR ELECTRONICS CORP.
    Inventors: Chien-Sen Weng, Meng-Yeng Xing, Wei-Chang Yu, Chih-Sheng Chen, Yu-Ching Chang
  • Patent number: 8178377
    Abstract: A method for fabricating a light emitting diode chip is provided. In the method, a half-tone mask process, a gray-tone mask process or a multi-tone mask process is applied and combined with a lift-off process to further reduce process steps of the light emitting diode chip. In the present invention, some components may also be simultaneously formed by an identical process to reduce the process steps of the light emitting diode chip. Consequently, the fabricating method of the light emitting diode provided in the present invention reduces the cost and time for the fabrication of the light emitting diode.
    Type: Grant
    Filed: March 11, 2011
    Date of Patent: May 15, 2012
    Assignee: Lextar Electronics Corp.
    Inventors: Kuo-Lung Fang, Chien-Sen Weng, Chih-Wei Chao
  • Patent number: 8178376
    Abstract: A method for fabricating a light emitting diode chip is provided. In the method, a half-tone mask process, a gray-tone mask process or a multi-tone mask process is applied and combined with a lift-off process to further reduce process steps of the light emitting diode chip. In the present invention, some components may also be simultaneously formed by an identical process to reduce the process steps of the light emitting diode chip. Consequently, the fabricating method of the light emitting diode provided in the present invention reduces the cost and time for the fabrication of the light emitting diode.
    Type: Grant
    Filed: March 11, 2011
    Date of Patent: May 15, 2012
    Assignee: Lextar Electronics Corp.
    Inventors: Kuo-Lung Fang, Chien-Sen Weng, Chih-Wei Chao
  • Patent number: 8173467
    Abstract: A method for fabricating a light emitting diode chip is provided. In the method, a half-tone mask process, a gray-tone mask process or a multi-tone mask process is applied and combined with a lift-off process to further reduce process steps of the light emitting diode chip. In the present invention, some components may also be simultaneously formed by an identical process to reduce the process steps of the light emitting diode chip. Consequently, the fabricating method of the light emitting diode provided in the present invention reduces the cost and time for the fabrication of the light emitting diode.
    Type: Grant
    Filed: March 11, 2011
    Date of Patent: May 8, 2012
    Assignee: Lextar Electronics Corp.
    Inventors: Kuo-Lung Fang, Chien-Sen Weng, Chih-Wei Chao
  • Patent number: 8173466
    Abstract: A method for fabricating a light emitting diode chip is provided. In the method, a half-tone mask process, a gray-tone mask process or a multi-tone mask process is applied and combined with a lift-off process to further reduce process steps of the light emitting diode chip. In the present invention, some components may also be simultaneously formed by an identical process to reduce the process steps of the light emitting diode chip. Consequently, the fabricating method of the light emitting diode provided in the present invention reduces the cost and time for the fabrication of the light emitting diode.
    Type: Grant
    Filed: March 11, 2011
    Date of Patent: May 8, 2012
    Assignee: Lextar Electronics Corp.
    Inventors: Kuo-Lung Fang, Chien-Sen Weng, Chih-Wei Chao
  • Patent number: 8173465
    Abstract: A method for fabricating a light emitting diode chip is provided. In the method, a half-tone mask process, a gray-tone mask process or a multi-tone mask process is applied and combined with a lift-off process to further reduce process steps of the light emitting diode chip. In the present invention, some components may also be simultaneously formed by an identical process to reduce the process steps of the light emitting diode chip. Consequently, the fabricating method of the light emitting diode provided in the present invention reduces the cost and time for the fabrication of the light emitting diode.
    Type: Grant
    Filed: March 11, 2011
    Date of Patent: May 8, 2012
    Assignee: Lextar Electronics Corp.
    Inventors: Kuo-Lung Fang, Chien-Sen Weng, Chih-Wei Chao
  • Patent number: 8173468
    Abstract: A method for fabricating a light emitting diode chip is provided. In the method, a half-tone mask process, a gray-tone mask process or a multi-tone mask process is applied and combined with a lift-off process to further reduce process steps of the light emitting diode chip. In the present invention, some components may also be simultaneously formed by an identical process to reduce the process steps of the light emitting diode chip. Consequently, the fabricating method of the light emitting diode provided in the present invention reduces the cost and time for the fabrication of the light emitting diode.
    Type: Grant
    Filed: March 11, 2011
    Date of Patent: May 8, 2012
    Assignee: Lextar Electronics Corp.
    Inventors: Kuo-Lung Fang, Chien-Sen Weng, Chih-Wei Chao
  • Patent number: 8143090
    Abstract: A method of fabricating a photo sensor includes the following steps. First, a substrate is provided, having a conductive layer, a buffer dielectric layer, a patterned semiconductor layer, a dielectric layer, and a planarization layer disposed thereon from bottom to top, wherein the patterned semiconductor layer comprises a first doped region, an intrinsic region, and a second doped region disposed in order. Then, the planarization layer is patterned to form an opening in the planarization layer to expose a portion of the dielectric layer, wherein the opening is positioned on the intrinsic region and portions of the first and the second doped regions. Thereafter, at least a patterned transparent conductive layer is formed in the opening, covering the boundary of the intrinsic region and the first doped region and the boundary of the intrinsic region and the second doped region.
    Type: Grant
    Filed: March 10, 2011
    Date of Patent: March 27, 2012
    Assignee: AU Optronics Corp.
    Inventors: Chien-Sen Weng, Chih-Wei Chao, Chrong-Jung Lin, Ya-Chin King
  • Patent number: 8101440
    Abstract: A method for fabricating a light emitting diode chip is provided. Firstly, a semiconductor device layer is formed on a substrate. Afterwards, a current spreading layer is formed on a portion of the semiconductor device layer. Then, a current blocking layer and a passivation layer are formed on a portion of the semiconductor device layer not covered by the current spreading layer. Finally, a first electrode is formed on the current blocking layer and the current spreading layer. Moreover, a second electrode is formed on the semiconductor device layer.
    Type: Grant
    Filed: August 30, 2011
    Date of Patent: January 24, 2012
    Assignee: Lextar Electronics Corp.
    Inventors: Kuo-Lung Fang, Chien-Sen Weng, Chih-Wei Chao
  • Publication number: 20110318855
    Abstract: A method for fabricating a light emitting diode chip is provided. Firstly, a semiconductor device layer is formed on a substrate. Afterwards, a current spreading layer is formed on a portion of the semiconductor device layer. Then, a current blocking layer and a passivation layer are formed on a portion of the semiconductor device layer not covered by the current spreading layer. Finally, a first electrode is formed on the current blocking layer and the current spreading layer. Moreover, a second electrode is formed on the semiconductor device layer.
    Type: Application
    Filed: August 30, 2011
    Publication date: December 29, 2011
    Applicant: LEXTAR ELECTRONICS CORP.
    Inventors: Kuo-Lung Fang, Chien-Sen Weng, Chih-Wei Chao
  • Publication number: 20110318858
    Abstract: A method for fabricating a light emitting diode chip is provided. Firstly, a semiconductor device layer is formed on a substrate. Afterwards, a current spreading layer is formed on a portion of the semiconductor device layer. Then, a current blocking layer and a passivation layer are formed on a portion of the semiconductor device layer not covered by the current spreading layer. Finally, a first electrode is formed on the current blocking layer and the current spreading layer. Moreover, a second electrode is formed on the semiconductor device layer.
    Type: Application
    Filed: August 30, 2011
    Publication date: December 29, 2011
    Applicant: LEXTAR ELECTRONICS CORP.
    Inventors: Kuo-Lung Fang, Chien-Sen Weng, Chih-Wei Chao
  • Patent number: 8063464
    Abstract: A photo detector is disclosed. The photo detector has a substrate, a semiconductor layer disposed on the substrate, an insulating layer covered on the semiconductor layer, an interlayer dielectric layer covered on the insulating layer, and two electrodes formed on a portion of the interlayer dielectric layer. The semiconductor layer has a first doping region, a second doping region, and an intrinsic region located between the first doping region and the second doping region. The interlayer dielectric layer has at least three holes to expose a portion of the insulating layer, a portion of the first doping region, and the second doping region. The electrodes are connected to the first doping region and the second doping region through two of the holes.
    Type: Grant
    Filed: August 17, 2009
    Date of Patent: November 22, 2011
    Assignee: AU Optronics Corp.
    Inventors: Chien-Sen Weng, Yi-Wei Chen, Chih-Wei Chao, Kun-Chih Lin