Abstract: A thin film transistor includes a substrate, a semiconductor layer, a gate insulating layer, a gate, a source and a drain. The semiconductor layer is located above the substrate. The gate insulating layer is located above the semiconductor layer. The gate is located above the gate insulating layer and overlapping with the semiconductor layer. The gate includes a first portion, a second portion and a third portion. The first portion is extending along the surface of the gate insulating layer and directly in contact with the gate insulating layer. The second portion is separated from the gate insulating layer. Taking the surface of the gate insulating layer as a reference, the top surface of the second portion is higher than the top surface of the first portion. The third portion connects the first portion to the second portion. The source and the drain are electrically connected to the semiconductor layer.

Abstract: A switchable backlight module is disclosed. The switchable backlight module includes two light source modules arranged parallelly with respect to a plane. Each of the light source modules includes a turning film and a LGP. The LGP is of an edge-lit type arranged parallelly under the turning film. A light ray enters the LGP from a light incident side of the LGP, exits the LGP from a light emergent surface of the LGP, enters the turning film, and exits the turning film from a surface of the turning film away from the LGP. The light incident side of the LGP of one of the light source modules is perpendicular to the light incident side of the LGP of the other light source module. The switchable backlight module is in an anti-peeping mode having a narrow viewing angle when only an upper one of the light source modules emits light.

Abstract: A switching converter circuit for switching one end of an inductor therein between plural voltages according to a pulse width modulation (PWM) signal to convert an input voltage to an output voltage. The switching converter circuit has a driver circuit including a high side driver, a low side driver, a high side sensor circuit, and a low side sensor circuit. The high side sensor circuit is configured to sense a gate-source voltage of a high side metal oxide semiconductor field effect transistor (MOSFET), to generate a low side enable signal for enabling the low side driver to switch a low side MOSFET according to the PWM signal. The low side sensor circuit is configured to sense a gate-source voltage of a low side MOSFET, to generate a high side enable signal for enabling the high side driver to switch a high side MOSFET according to the PWM signal.

Abstract: An electronic device including a bracket and an antenna is provided. The bracket includes first, second, third, and fourth surfaces. The antenna includes a radiator. The radiator includes first, second, third, and fourth portions. The first portion is located on the first surface and includes connected first and second sections. The second portion is located on the second surface and includes third, fourth, fifth, and sixth sections. The third section, the fourth section, and the fifth sections are bent and connected to form a U shape. The third portion is located on the third surface and is connected to the second section and the fourth section. The fourth portion is located on the fourth surface and is connected to the fifth section, the sixth section, and the third portion. The radiator is adapted to resonate at a low frequency band and a first high frequency band.

Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.

Abstract: An electronic device includes a metal back cover, a metal frame, and a first, second, third, and fourth radiators. The metal frame includes a discrete part and two connection parts. The connection parts are located by two sides of the discrete part, separated from the discrete part, and connected to the metal back cover. A U-shaped slot is formed between the discrete part and the metal back cover and between the discrete part and the connection parts. The first radiator is separated from the discrete part and includes a feed end. The second, third, and fourth radiators are connected to the discrete part and the metal back cover. The third radiator is located between the first and second radiators. The first radiator is located between the third and fourth radiators. The discrete part and the first, second, third, and fourth radiators form an antenna module together.

Abstract: An electronic device includes a metal back cover, a metal frame, a first antenna module and a second antenna module. The metal frame includes a first and a second disconnection portion, a first and a second connection portion. The first and the second connection portion are connected to the metal back cover. The first disconnection portion is separated from the first connection portion, the metal back cover and the second disconnection portion to form a first slot. The second disconnection portion is connected to the second connection portion and is separated from the metal back cover to form a second slot. The first antenna module is connected to the first disconnection portion, and forms a first antenna path. The second antenna module is connected to the second disconnection portion, and forms a second and a third antenna path with the second disconnection portion and the metal back cover.

Abstract: A backlight module includes a light guide plate and a light source module. The light guide plate includes a light receiving surface, a light exit surface, and a bottom surface. The light exit surface is connected to a first end of the light receiving surface. The bottom surface is connected to a second end of the light receiving surface opposite to the first end and located opposite to the light exit surface. The bottom surface includes a central region and a peripheral girdle region at least partially surrounding the central region. The central region includes a plurality of first reflecting structures, and the peripheral girdle region includes a plurality of second reflecting structures. The second reflecting structure is different from the first reflecting structure. The light source module is disposed along the light receiving surface and provides light beams incident into the light receiving surface.

Abstract: The present disclosure provides a fabrication method of a light guide plate including the following steps. A first substrate with a processing plane is provided. A plurality of first mold trenches are formed along a second direction on the processing plane by a first cutter, where the first mold trenches are connected to each other. A plurality of second mold trenches are formed along a first direction different from the second direction in a first processing region of the processing plane by a second cutter, where the first processing region is near to a first edge of the processing plane. A light-emitting surface of the light guide plate is formed by using the first substrate as a mold.

Abstract: The present disclosure provides a backlight module including a plurality of light-emitting elements and a light guide plate, in which the light guide plate includes a light-emitting surface, a bottom surface opposite to the light-emitting surface, and a light-incident side connecting the light-emitting surface and the bottom surface. The light-emitting elements are disposed at the light-incident side along a first direction, and the light-emitting surface includes a first region near the light-incident side. The light guide plate includes a plurality of columns extending along the first direction and disposed in the first region of the light-emitting surface and a plurality of microstructure groups, in which each microstructure group includes a plurality of microstructures arranged along a second direction different from the first direction, and each microstructure connects the adjacent two of the columns.

Abstract: The present disclosure provides a backlight module including a light guide plate including a light-emitting surface, a bottom surface opposite to the light-emitting surface, and a light-incident side connecting the light-emitting surface and the bottom surface and light-emitting elements disposed at the light-incident side along a first direction. The light guide plate includes first columnar microstructures extending along a second direction perpendicular to the first direction on the light-emitting surface and columnar microstructure groups with second columnar microstructures, which are 1-15 times the number of the adjacent first columnar microstructures, between the first columnar microstructures extending along the second direction on the light-emitting surface. A first width of the first columnar microstructures is larger than or equal to a second width of the columnar microstructure groups along the first direction.

Abstract: The present disclosure provides a backlight module including a plurality of light-emitting elements and a light guide plate, in which the light guide plate includes a light-emitting surface, a bottom surface opposite to the light-emitting surface, and a light-incident side connecting the light-emitting surface and the bottom surface. The light-emitting elements are disposed at the light-incident side along a first direction, and the light-emitting surface includes a first region near the light-incident side. The light guide plate includes a plurality of columns extending along the first direction and disposed in the first region of the light-emitting surface and a plurality of microstructure groups, in which each microstructure group includes a plurality of microstructures arranged along a second direction different from the first direction, and each microstructure connects the adjacent two of the columns.

Abstract: The present disclosure provides a backlight module including a light guide plate including a light-emitting surface, a bottom surface opposite to the light-emitting surface, and a light-incident side connecting the light-emitting surface and the bottom surface and light-emitting elements disposed at the light-incident side along a first direction. The light guide plate includes first columnar microstructures extending along a second direction perpendicular to the first direction on the light-emitting surface and columnar microstructure groups with second columnar microstructures, which are 1-15 times the number of the adjacent first columnar microstructures, between the first columnar microstructures extending along the second direction on the light-emitting surface. A first width of the first columnar microstructures is larger than or equal to a second width of the columnar microstructure groups along the first direction.

Abstract: A temperature correction method is provided for detecting a temperature of a computer device that includes a first ambient temperature sensor and a second ambient temperature sensor that are spaced apart from each other, and a fan module. When a temperature difference between the temperatures sensed by the first and second ambient temperature sensors is greater than a predetermined threshold value, a controller of the computer device performs temperature correction that is related to the temperature difference, a fan speed of the fan module, and at least one of the sensed temperatures.

Abstract: A band gap engineered, charge trapping memory cell includes a charge trapping element that is separated from a gate by a blocking layer of metal doped silicon oxide material having a medium dielectric constant, such as aluminum doped silicon oxide, and separated from the semiconductor body including the channel by an engineered tunneling dielectric.

Abstract: A blocking dielectric engineered, charge trapping memory cell includes a charge trapping element that is separated from a gate by a blocking dielectric including a buffer layer in contact with the charge trapping element, such as silicon dioxide which can be made with high-quality, and a second capping layer in contact with said one of the gate and the channel. The capping layer has a dielectric constant that is higher than that of the first layer, and preferably includes a high-? material. The second layer also has a conduction band offset that is relatively high. A bandgap engineered tunneling layer between the channel and the charge trapping element is provided which, in combination with the multilayer blocking dielectric described herein, provides for high-speed erase operations by hole tunneling. In an alternative, a single layer tunneling layer is used.

Abstract: A blocking dielectric engineered, charge trapping memory cell includes a charge trapping element that is separated from a gate by a blocking dielectric including a buffer layer in contact with the charge trapping element, such as silicon dioxide which can be made with high-quality, and a second capping layer in contact with said one of the gate and the channel. The capping layer has a dielectric constant that is higher than that of the first layer, and preferably includes a high-? material. The second layer also has a conduction band offset that is relatively high. A bandgap engineered tunneling layer between the channel and the charge trapping element is provided which, in combination with the multilayer blocking dielectric described herein, provides for high-speed erase operations by hole tunneling. In an alternative, a single layer tunneling layer is used.

Abstract: A blocking dielectric engineered, charge trapping memory cell includes a charge trapping element that is separated from a gate by a blocking dielectric including a buffer layer in contact with the charge trapping element, such as silicon dioxide which can be made with high-quality, and a second capping layer in contact with said one of the gate and the channel. The capping layer has a dielectric constant that is higher than that of the first layer, and preferably includes a high-? material. The second layer also has a conduction band offset that is relatively high. A bandgap engineered tunneling layer between the channel and the charge trapping element is provided which, in combination with the multilayer blocking dielectric described herein, provides for high-speed erase operations by hole tunneling. In an alternative, a single layer tunneling layer is used.

Abstract: A blocking dielectric engineered, charge trapping memory cell includes a charge trapping element that is separated from a gate by a blocking dielectric including a buffer layer in contact with the charge trapping element, such as silicon dioxide which can be made with high-quality, and a second capping layer in contact with said one of the gate and the channel. The capping layer has a dielectric constant that is higher than that of the first layer, and preferably includes a high-? material. The second layer also has a conduction band offset that is relatively high. A bandgap engineered tunneling layer between the channel and the charge trapping element is provided which, in combination with the multilayer blocking dielectric described herein, provides for high-speed erase operations by hole tunneling. In an alternative, a single layer tunneling layer is used.

Abstract: A blocking dielectric engineered, charge trapping memory cell includes a charge trapping element that is separated from a gate by a blocking dielectric including a buffer layer in contact with the charge trapping element, such as silicon dioxide which can be made with high-quality, and a second capping layer in contact with said one of the gate and the channel. The capping layer has a dielectric constant that is higher than that of the first layer, and preferably includes a high-? material. The second layer also has a conduction band offset that is relatively high. A bandgap engineered tunneling layer between the channel and the charge trapping element is provided which, in combination with the multilayer blocking dielectric described herein, provides for high-speed erase operations by hole tunneling. In an alternative, a single layer tunneling layer is used.