Patents by Inventor Chien-Ying WU

Chien-Ying WU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11327228
    Abstract: A method for fabricating a photonic device is provided. The method includes forming an optical coupler and a waveguide structure connected to the optical coupler over a semiconductor substrate; forming a metal-dielectric stack over the optical coupler and the waveguide structure; etching a hole in the metal-dielectric stack and vertically overlapping the optical coupler; and forming a protection layer on a sidewall and a bottom of the hole.
    Type: Grant
    Filed: July 9, 2020
    Date of Patent: May 10, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Sui-Ying Hsu, Yueh-Ying Lee, Chien-Ying Wu, Chen-Hao Huang, Chien-Chang Lee, Chia-Ping Lai
  • Publication number: 20220011511
    Abstract: A method for fabricating a photonic device is provided. The method includes forming an optical coupler and a waveguide structure connected to the optical coupler over a semiconductor substrate; forming a metal-dielectric stack over the optical coupler and the waveguide structure; etching a hole in the metal-dielectric stack and vertically overlapping the optical coupler; and forming a protection layer on a sidewall and a bottom of the hole.
    Type: Application
    Filed: July 9, 2020
    Publication date: January 13, 2022
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Sui-Ying HSU, Yueh-Ying LEE, Chien-Ying WU, Chen-Hao HUANG, Chien-Chang LEE, Chia-Ping LAI
  • Patent number: 11175452
    Abstract: A method for fabricating a photonic device is provided. The method includes patterning a semiconductor layer to form a waveguide structure, a semiconductor structure connected to the waveguide structure, and a dummy semiconductor structure disconnected from the waveguide structure and the semiconductor structure; epitaxially growing an epitaxial semiconductor feature over the semiconductor structure and a dummy epitaxial semiconductor feature over the dummy semiconductor structure; depositing a first capping film over the epitaxial semiconductor feature and the dummy epitaxial semiconductor feature; depositing a second capping film over the first capping film, wherein an oxide concentration of the second capping film is greater than an oxide concentration of the first capping film; and patterning the first and second capping films to form at least a dummy composite capping layer over the dummy epitaxial semiconductor feature.
    Type: Grant
    Filed: August 11, 2020
    Date of Patent: November 16, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Sui-Ying Hsu, Yueh-Ying Lee, Chien-Ying Wu, Chen-Hao Huang, Chien-Chang Lee, Chia-Ping Lai
  • Publication number: 20200052018
    Abstract: A method includes epitaxially growing a first III-V compound layer over a semiconductive substrate. A second III-V compound layer is epitaxially grown over the first III-V compound layer. A source/drain contact is formed over the second III-V compound layer. A gate structure is formed over the second III-V compound layer. A pattern is formed shielding the gate structure and the source/drain contact, in which a portion of the second III-V compound layer is free from coverage by the pattern.
    Type: Application
    Filed: October 21, 2019
    Publication date: February 13, 2020
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chien-Ying WU, Li-Hsin CHU, Chung-Chuan TSENG, Chia-Wei LIU
  • Patent number: 10453881
    Abstract: An infrared image sensor component includes a semiconductor substrate, an active pixel region disposed on the semiconductor substrate for receiving an infrared ray, and a transistor coupled to the active pixel region. The transistor includes a gate and a source/drain stressor disposed adjacent to the gate. The active pixel region includes a III-V compound material.
    Type: Grant
    Filed: January 13, 2018
    Date of Patent: October 22, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chien-Ying Wu, Li-Hsin Chu, Chung-Chuan Tseng, Chia-Wei Liu
  • Patent number: 10050103
    Abstract: A method of making a metal insulator metal (MIM) capacitor includes forming a copper bulk layer in a base layer, wherein the copper bulk layer includes a hillock extending from a top surface thereof. The method further includes depositing an etch stop layer over the base layer and the copper bulk layer. The method further includes depositing an oxide-based dielectric layer over the etch stop layer. The method further includes forming a capacitor over the oxide-based dielectric layer. The method further includes forming a contact extending through the oxide-based dielectric layer and the etch stop layer to contact the copper bulk layer, wherein the forming of the contact removes the hillock.
    Type: Grant
    Filed: May 25, 2017
    Date of Patent: August 14, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Fang-Ting Kuo, Ren-Wei Xiao, Sheng Yu Lin, Chia-Wei Liu, Chun Hua Chang, Chien-Ying Wu
  • Publication number: 20180138220
    Abstract: An infrared image sensor component includes a semiconductor substrate, an active pixel region disposed on the semiconductor substrate for receiving an infrared ray, and a transistor coupled to the active pixel region. The transistor includes a gate and a source/drain stressor disposed adjacent to the gate. The active pixel region includes a III-V compound material.
    Type: Application
    Filed: January 13, 2018
    Publication date: May 17, 2018
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chien-Ying WU, Li-Hsin CHU, Chung-Chuan TSENG, Chia-Wei LIU
  • Patent number: 9871067
    Abstract: An infrared image sensor component includes at least one III-V compound layer on the semiconductor substrate, in which the portion of the III-V compound layer(s) uncovered by the patterns is utilized as active pixel region for detecting the incident infrared ray. The infrared image sensor component includes at least one transistor coupled to the active pixel region, and charge generated by the active pixel region is transmitted to the transistor.
    Type: Grant
    Filed: February 23, 2016
    Date of Patent: January 16, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chien-Ying Wu, Li-Hsin Chu, Chung-Chuan Tseng, Chia-Wei Liu
  • Publication number: 20170263694
    Abstract: A method of making a metal insulator metal (MIM) capacitor includes forming a copper bulk layer in a base layer, wherein the copper bulk layer includes a hillock extending from a top surface thereof. The method further includes depositing an etch stop layer over the base layer and the copper bulk layer. The method further includes depositing an oxide-based dielectric layer over the etch stop layer. The method further includes forming a capacitor over the oxide-based dielectric layer. The method further includes forming a contact extending through the oxide-based dielectric layer and the etch stop layer to contact the copper bulk layer, wherein the forming of the contact removes the hillock.
    Type: Application
    Filed: May 25, 2017
    Publication date: September 14, 2017
    Inventors: Fang-Ting KUO, Ren-Wei XIAO, Sheng Yu LIN, Chia-Wei LIU, Chun Hua CHANG, Chien-Ying WU
  • Patent number: 9666660
    Abstract: A metal insulator metal (MIM) capacitor includes a base layer and a copper bulk layer in the base layer. The MIM capacitor further includes an etch stop layer over the base layer and the copper bulk layer and an oxide-based dielectric layer over the etch stop layer. The MIM capacitor further includes a capacitor bottom layer over the oxide-based dielectric layer, an insulator layer over the capacitor bottom layer, and a capacitor top layer over the insulator layer.
    Type: Grant
    Filed: August 16, 2013
    Date of Patent: May 30, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Fang-Ting Kuo, Ren-Wei Xiao, Sheng Yu Lin, Chia-Wei Liu, Chun Hua Chang, Chien-Ying Wu
  • Publication number: 20170141148
    Abstract: An infrared image sensor component includes at least one III-V compound layer on the semiconductor substrate, in which the portion of the III-V compound layer(s) uncovered by the patterns is utilized as active pixel region for detecting the incident infrared ray. The infrared image sensor component includes at least one transistor coupled to the active pixel region, and charge generated by the active pixel region is transmitted to the transistor.
    Type: Application
    Filed: February 23, 2016
    Publication date: May 18, 2017
    Inventors: Chien-Ying WU, Li-Hsin CHU, Chung-Chuan TSENG, Chia-Wei LIU
  • Publication number: 20150048483
    Abstract: A metal insulator metal (MIM) capacitor includes a base layer and a copper bulk layer in the base layer. The MIM capacitor further includes an etch stop layer over the base layer and the copper bulk layer and an oxide-based dielectric layer over the etch stop layer. The MIM capacitor further includes a capacitor bottom layer over the oxide-based dielectric layer, an insulator layer over the capacitor bottom layer, and a capacitor top layer over the insulator layer.
    Type: Application
    Filed: August 16, 2013
    Publication date: February 19, 2015
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Fang-Ting KUO, Ren-Wei XIAO, Sheng Yu LIN, Chia-Wei LIU, Chun Hua CHANG, Chien-Ying WU