Abstract: An integrated circuit includes a first-voltage power rail and a second-voltage power rail in a first connection layer, and includes a first-voltage underlayer power rail and a second-voltage underlayer power rail below the first connection layer. Each of the first-voltage and second-voltage power rails extends in a second direction that is perpendicular to a first direction. Each of the first-voltage and second-voltage underlayer power rails extends in the first direction. The integrated circuit includes a first via-connector connecting the first-voltage power rail with the first-voltage underlayer power rail, and a second via-connector connecting the second-voltage power rail with the second-voltage underlayer power rail.

Abstract: A panel device including a substrate, a conductor pad, a turning wire, and a circuit board is provided. The substrate has a first surface and a second surface connected to the first surface while a normal direction of the second surface is different from a normal direction of the first surface. The conductor pad is disposed on the first surface of the substrate. The turning wire is disposed on the substrate and extends from the first surface to the second surface. The turning wire includes a wiring layer in contact with the conductor pad and a wire covering layer covering the wiring layer. The circuit board is bonded to and electrically connected to the wire covering layer. A manufacturing method of a panel device is also provided herein.

Abstract: A semiconductor device structure, along with methods of forming such, are described. The semiconductor device structure includes a first dielectric feature extending along a first direction, the first dielectric feature comprising a first dielectric layer having a first sidewall and a second sidewall opposing the first sidewall, a first semiconductor layer disposed adjacent the first sidewall, the first semiconductor layer extending along a second direction perpendicular to the first direction, a second dielectric feature extending along the first direction, the second dielectric feature disposed adjacent the first semiconductor layer, and a first gate electrode layer surrounding at least three surfaces of the first semiconductor layer, and a portion of the first gate electrode layer is exposed to a first air gap.

Abstract: A package structure is provided. The package structure includes a first die and a second die, a dielectric layer, a bridge, an encapsulant, and a redistribution layer structure. The dielectric layer is disposed on the first die and the second die. The bridge is electrically connected to the first die and the second die, wherein the dielectric layer is spaced apart from the bridge. The encapsulant is disposed on the dielectric layer and laterally encapsulating the bridge. The redistribution layer structure is disposed over the encapsulant and the bridge. A top surface of the bridge is in contact with the RDL structure.

Abstract: Semiconductor structures and methods for forming the same are provided. The semiconductor structure includes a plurality of first nanostructures formed over a substrate, and a dielectric wall adjacent to the first nanostructures. The semiconductor structure also includes a first liner layer between the first nanostructures and the dielectric wall, and the first liner layer is in direct contact with the dielectric wall. The semiconductor structure also includes a gate structure surrounding the first nanostructures, and the first liner layer is in direct contact with a portion of the gate structure.

Abstract: A method includes forming a dummy pattern over test region of a substrate; forming an interlayer dielectric (ILD) layer laterally surrounding the dummy pattern; removing the dummy pattern to form an opening; forming a dielectric layer in the opening; performing a first testing process on the dielectric layer; performing an annealing process to the dielectric layer; and performing a second testing process on the annealed dielectric layer.

Abstract: A semiconductor device and method of manufacture are provided. In embodiments a first liner is deposited to line a recess between a first semiconductor fin and a second semiconductor fin, the first liner comprising a first material. The first liner is annealed to transform the first material to a second material. A second liner is deposited to line the recess, the second liner comprising a third material. The second liner is annealed to transform the third material to a fourth material.

Abstract: A semiconductor device includes a substrate. The semiconductor device includes a fin that is formed over the substrate and extends along a first direction. The semiconductor device includes a gate structure that straddles the fin and extends along a second direction perpendicular to the first direction. The semiconductor device includes a first source/drain structure coupled to a first end of the fin along the first direction. The gate structure includes a first portion protruding toward the first source/drain structure along the first direction. A tip edge of the first protruded portion is vertically above a bottom surface of the gate structure.

Abstract: A method for forming a semiconductor device is provided. The method includes forming a plurality of first channel nanostructures and a plurality of second channel nanostructures in an n-type device region and a p-type device region of a substrate, respectively, and sequentially depositing a gate dielectric layer, an n-type work function metal layer, and a cap layer surrounding each of the first and second channel nanostructures. The cap layer merges in first spaces between adjacent first channel nanostructures and merges in second spaces between adjacent second channel nanostructures. The method further includes selectively removing the cap layer and the n-type work function metal layer in the p-type device region, and depositing a p-type work function metal layer over the cap layer in the n-type device region and the gate dielectric layer in the p-type device region. The p-type work function metal layer merges in the second spaces.

Abstract: Trenches in which to form a back side isolation structure for an array of CMOS image sensors are formed by a cyclic process that allows the trenches to be kept narrow. Each cycle of the process includes etching to add a depth segment to the trenches and coating the depth segment with an etch-resistant coating. The following etch step will break through the etch-resistant coating at the bottom of the trench but the etch-resistant coating will remain in the upper part of the trench to limit lateral etching and substrate damage. The resulting trenches have a series of vertically spaced nodes. The process may result in a 10% increase in photodiode area and a 30-40% increase in full well capacity.

Abstract: Some implementations described herein include systems and techniques for fabricating a wafer-on-wafer product using a filled lateral gap between beveled regions of wafers included in a stacked-wafer assembly and along a perimeter region of the stacked-wafer assembly. The systems and techniques include a deposition tool having an electrode with a protrusion that enhances an electromagnetic field along the perimeter region of the stacked-wafer assembly during a deposition operation performed by the deposition tool. Relative to an electromagnetic field generated by a deposition tool not including the electrode with the protrusion, the enhanced electromagnetic field improves the deposition operation so that a supporting fill material may be sufficiently deposited.

Abstract: A semiconductor structure, comprising a redistribution layer (RDL) including a dielectric layer and a conductive trace within the dielectric layer; a first conductive member disposed over the RDL and electrically connected with the conductive trace; a second conductive member disposed over the RDL and electrically connected with the conductive trace; a first die disposed over the RDL; a second die disposed over the first die, the first conductive member and the second conductive member; and a connector disposed between the second die and the second conductive member to electrically connect the second die with the conductive trace, wherein the first conductive member is electrically isolated from the second die.

Abstract: A quantization method for neural network model includes following steps: initializing a weight array of a neural network model, wherein the weight array includes a plurality of initial weights; performing a quantization procedure to generate a quantized weight array according to the weight array, wherein the quantized weight array includes a plurality of quantized weights within a fixed range; performing a training procedure of the neural network model according to the quantized weight array; and determining whether a loss function is convergent in the training procedure and outputting a post-trained quantized weight array when the loss function is convergent.

Abstract: A data processing system disposed on a sensor comprises a de-identified sensing device and a decoding device. The de-identified sensing device is configured to receive a sensing data of a target and to process the sensing data to generate a de-identified data. The decoding device communicably connects to the de-identified sensing device and is configured to generate a decoded data according to the de-identified data and a decoding parameter obtained from a database trained by machine learning. The de-identified sensing device comprises an analog encoder configured to encode the sensing data to generate a responsive data.

Abstract: A semiconductor manufacturing system includes an operating terminal, a first controller, and a plurality of second controllers. The operating terminal controls a main controller. Each of the plurality of second controllers is electrically connected to the first controller. In an initial or default state, the operating terminal controls the first controller as a main controller, and when the first controller fails, the operating terminal controls one of the plurality of the second controllers as a main controller, the others of the plurality of second controllers being controlled by the main controller.

Abstract: A front opening unified pod (FOUP) loading and air filling system comprises a FOUP loading device and an air filling device. The FOUP loading device is configured to load and unload a FOUP, and comprises a substrate and a controller. The substrate comprises a frame, a bearing platform installed on the frame, and a cavity under the bearing platform. The bearing platform is configured to support the FOUP. The controller and the air filling device are accommodated in the cavity. The air filling device is connected to the FOUP.

Abstract: A wafer supporting system includes a supporting pedestal. The supporting pedestal includes a main supporting body and a hollow frame surrounding the supporting pedestal. The main supporting body includes a top surface and a bottom surface opposite to the top surface, the top surface defined a plurality of vent grooves and a plurality of holding grooves. The main supporting body includes a plurality of holding channels extending through from the bottom surface to the holding grooves and a plurality of first through holes pass through from the top surface to the bottom surface, each holding groove is surrounded by a plurality of first through holes; an inner side surface of the hollow frame and a side wall of the supporting pedestal form a gap, and a plurality of exhaust cylinders are arranged in the annular gap and each exhaust cylinder is communicated with each vent groove.

Abstract: A reflective exposure apparatus includes a platform, an illuminating system, a photomask, a chip, and a reflecting convex mirror. The photomask is formed on the platform and faces the illuminating system. The chip is formed on the platform. The illuminating system and the reflecting curved mirror are formed on opposite sides of the platform. The platform can be moved relative to the illuminating system and the reflecting curved mirror.

Abstract: An air purifying device for an FOUP includes an air supply assembly. The air supply assembly includes an air supply tube and an airtight connecting unit connecting the tube to the FOUP in an airtight manner. The air tight connecting unit includes an elastic absorbing portion, a nozzle, and a driver. An initial position of the elastic absorbing portion is lower than a supporting surface of a load port before the FOUP is placed on the supporting surface. One end of the nozzle is fixedly inserted to the elastic absorbing portion, and another end of the nozzle is movably inserted to the air supply tube. The driver can drive the nozzle and the elastic absorbing portion to move upward to press against the FOUP when the FOUP is placed on the supporting surface, causing the elastic absorbing portion to be vertically deformed to maintain an airtight connection.

Abstract: An air purifying device for a front opening unified pod (FOUP) carrying silicon wafers includes an air supply assembly and an air discharging assembly. The air supply assembly can be triggered by a signal to supply purified air to the FOUP. The air discharging assembly discharges air from the FOUP when the air supply assembly begins to supply the FOUP with purified air and detects a humidity and a temperature of the discharged air. The detected humidity and the detected temperature correspond to a relative humidity of the discharged air. When the relative humidity is equal to a preset relative humidity, the air supply assembly is stopped and the air discharging assembly is stopped.