Abstract: An optical transceiver module temperature control device includes a processor, a printed circuit board assembly, an optical transceiver module and a temperature adjustment element. The processor is configured to measure an ambient temperature. The printed circuit board assembly includes a first side and a second side. The first side is opposite to the second side. The optical transceiver module is disposed on the first side of the printed circuit board assembly. The temperature adjustment element is coupled to the processor and disposed on the second side of the printed circuit board assembly. The processor is configured to generate a temperature adjustment signal according to the ambient temperature and an operating temperature range. The temperature adjustment element is configured to perform heat exchange with the printed circuit board assembly according to the temperature adjustment signal to adjust a temperature of the optical transceiver module into the operating temperature range.

Abstract: Some implementations described herein provide techniques and apparatuses for a stacked semiconductor die package. The stacked semiconductor die package may include an upper semiconductor die package above a lower semiconductor die package. The stacked semiconductor die package includes one or more rows of pad structures located within a footprint of a semiconductor die of the lower semiconductor die package. The one or more rows of pad structures may be used to mount the upper semiconductor die package above the lower semiconductor die package. Relative to another stacked semiconductor die package including a row of dummy connection structures adjacent to the semiconductor die that may be used to mount the upper semiconductor die package, a size of the stacked semiconductor die package may be reduced.

Abstract: A light-emitting device, including a first type semiconductor layer, a patterned insulating layer, a light-emitting layer, and a second type semiconductor layer, is provided. The patterned insulating layer covers the first type semiconductor layer and has a plurality of insulating openings. The insulating openings are separated from each other. The light-emitting layer is located in the plurality of insulating openings and covers a portion of the first type semiconductor layer. The second type semiconductor layer is located on the light-emitting layer.

Abstract: A package structure is provided. The package structure includes a first die and a second die, a dielectric layer, a bridge, an encapsulant, and a redistribution layer structure. The dielectric layer is disposed on the first die and the second die. The bridge is electrically connected to the first die and the second die, wherein the dielectric layer is spaced apart from the bridge. The encapsulant is disposed on the dielectric layer and laterally encapsulating the bridge. The redistribution layer structure is disposed over the encapsulant and the bridge. A top surface of the bridge is in contact with the RDL structure.

Abstract: A method for manufacturing a package structure includes: providing a first electrical element and a second electrical element on a surface of a first carrier, wherein the second electrical element is shifted with respect to the first electrical element; and moving the first electrical element along at least one direction substantially parallel with the surface of the first carrier until a first surface of the first electrical element is substantially aligned with a first surface of the second electrical element from a top view.

Abstract: Trenches in which to form a back side isolation structure for an array of CMOS image sensors are formed by a cyclic process that allows the trenches to be kept narrow. Each cycle of the process includes etching to add a depth segment to the trenches and coating the depth segment with an etch-resistant coating. The following etch step will break through the etch-resistant coating at the bottom of the trench but the etch-resistant coating will remain in the upper part of the trench to limit lateral etching and substrate damage. The resulting trenches have a series of vertically spaced nodes. The process may result in a 10% increase in photodiode area and a 30-40% increase in full well capacity.

Abstract: Some implementations described herein include systems and techniques for fabricating a wafer-on-wafer product using a filled lateral gap between beveled regions of wafers included in a stacked-wafer assembly and along a perimeter region of the stacked-wafer assembly. The systems and techniques include a deposition tool having an electrode with a protrusion that enhances an electromagnetic field along the perimeter region of the stacked-wafer assembly during a deposition operation performed by the deposition tool. Relative to an electromagnetic field generated by a deposition tool not including the electrode with the protrusion, the enhanced electromagnetic field improves the deposition operation so that a supporting fill material may be sufficiently deposited.

Abstract: In some embodiments, the present disclosure relates to an integrated chip that includes a first image sensing element and a second image sensing element arranged over a substrate. A first micro-lens is arranged over the first image sensing element, and a second micro-lens is arranged over the second image sensing element. A composite deep trench isolation structure is arranged between the first and second image sensing elements. The composite deep trench isolation structure includes a lower portion arranged over the substrate and an upper portion arranged over the lower portion. The lower portion includes a first material, and the upper portion includes a second material that has a lower reflectivity than the first material.

Abstract: A tunable plasma exclusion zone in semiconductor fabrication is provided. A semiconductor wafer is provided within a chamber of a plasma processing apparatus between a first plasma electrode and a second plasma electrode. A plasma is generated from a process gas within the chamber and an electric field between the first plasma electrode and the second plasma electrode. The plasma is at least partially excluded from an edge region of the semiconductor wafer by a plasma exclusion zone (PEZ) ring within the chamber. The plasma may be tuned toward a center of the semiconductor wafer by electrically coupling an electrode ring of the PEZ ring to a voltage potential.

Abstract: In some embodiments, the present disclosure relates to an integrated chip that includes a first image sensing element and a second image sensing element arranged over a substrate. A first micro-lens is arranged over the first image sensing element, and a second micro-lens is arranged over the second image sensing element. A composite deep trench isolation structure is arranged between the first and second image sensing elements. The composite deep trench isolation structure includes a lower portion arranged over the substrate and an upper portion arranged over the lower portion. The lower portion includes a first material, and the upper portion includes a second material that has a higher reflectivity than the first material.

Abstract: A method for processing a biomedical material using a supercritical fluid includes introducing the supercritical fluid into a cavity. The supercritical fluid is doped with a hydrogen isotope-labeled compound, an organic metal compound, an element selecting from a halogen element, oxygen, sulfur, selenium, phosphorus or arsenic, or a compound containing the element. The biomedical material in the cavity is modified by the supercritical fluid at a temperature above a critical temperature of the supercritical fluid and a pressure above a critical pressure of the supercritical fluid.

Abstract: A method for reducing defects of an electronic component using a supercritical fluid includes recrystallizing and rearranging grains in the electronic component by introducing the supercritical fluid doped with H2S together with an electromagnetic wave into a cavity. The cavity has a temperature above a critical temperature of the supercritical fluid and a pressure above a critical pressure of the supercritical fluid.

Abstract: A method for bonding a first component to a second component includes placing the first and second components in a cavity. Each of the first and second components has a bonding portion, and the bonding portion of the first component faces the bonding portion of the second component. A supercritical fluid is then introduced into the cavity with a temperature of 40-400° C. and a pressure of 1,500-100,000 psi, and a pressure of 4-100,000 psi is applied on both the first and second components, assuring the bonding portion of the first component bond to the bonding portion of the second component. Moreover, a method for separating a first component from a second component includes placing a composite in a cavity. The composite includes the first component, the second component and a connecting layer by which the first component joins to the second component. The supercritical is then introduced into the cavity.

Abstract: A reaction method with a homogeneous-phase supercritical fluid includes introducing a first fluid into a mixing chamber. A mass is less than or equal to that can be absorbed by the molecular sieve component, totally absorbing the first fluid by the molecular sieve component. A second fluid is introduced into the mixing chamber with a mass being greater than that can be absorbed by the molecular sieve component. A temperature and a pressure in the mixing chamber are adjusted to a critical temperature and a critical pressure of the second fluid, respectively, releasing the first fluid in supercritical phase from the molecular sieve component into the mixing chamber, followed by homogeneously mixing with the second fluid in supercritical phase in the mixing chamber to obtain a homogeneous-phase mixing fluid. The homogeneous-phase mixing fluid is then introduced into a reaction chamber connected to the mixing chamber.

Abstract: A method for reducing defects of an electronic component using a supercritical fluid includes recrystallizing and rearranging grains in the electronic component by introducing the supercritical fluid doped with H2S together with an electromagnetic wave into a cavity. The cavity has a temperature above a critical temperature of the supercritical fluid and a pressure above a critical pressure of the supercritical fluid.

Abstract: A resistive random access memory overcomes the low durability of the conventional resistive random access memory. The resistive random access memory includes a first electrode, a second electrode, an enclosing layer and an oxygen-containing resistance changing layer. The first and second electrodes are separate from each other. The enclosing layer forms a first via-hole. The oxygen-containing resistance changing layer is arranged for the first via-hole. The first and second electrodes and the enclosing layer jointly enclose the oxygen-containing resistance changing layer. Each of the first electrode, the second electrode and the enclosing layer is made of an element not containing oxygen.

Abstract: A method for bonding a first component to a second component includes placing the first and second components in a cavity. Each of the first and second components has a bonding portion, and the bonding portion of the first component faces the bonding portion of the second component. A supercritical fluid is then introduced into the cavity with a temperature of 40-400° C. and a pressure of 1,500-100,000 psi, and a pressure of 4-100,000 psi is applied on both the first and second components, assuring the bonding portion of the first component bond to the bonding portion of the second component. Moreover, a method for separating a first component from a second component includes placing a composite in a cavity. The composite includes the first component, the second component and a connecting layer by which the first component joins to the second component. The supercritical is then introduced into the cavity.

Abstract: A reaction method with a homogeneous-phase supercritical fluid includes introducing a first fluid into a mixing chamber. A mass is less than or equal to that can be absorbed by the molecular sieve component, totally absorbing the first fluid by the molecular sieve component. A second fluid is introduced into the mixing chamber with a mass being greater than that can be absorbed by the molecular sieve component. A temperature and a pressure in the mixing chamber are adjusted to a critical temperature and a critical pressure of the second fluid, respectively, releasing the first fluid in supercritical phase from the molecular sieve component into the mixing chamber, followed by homogeneously mixing with the second fluid in supercritical phase in the mixing chamber to obtain a homogeneous-phase mixing fluid. The homogeneous-phase mixing fluid is then introduced into a reaction chamber connected to the mixing chamber.

Abstract: A method for increasing the luminous intensity of an ultraviolet light emitting diode includes heating an ultraviolet light emitting diode to a working temperature, and supplying electricity to the ultraviolet light emitting diode at the working temperature to make the ultraviolet light emitting diode emit ultraviolet light. An apparatus for increasing the luminous intensity of an ultraviolet light emitting diode includes a substrate, an ultraviolet light emitting diode mounted on the substrate, an electric heater mounted on the substrate, a temperature sensor, and a controller electrically connected to the ultraviolet light emitting diode, the electric heater, and the temperature sensor. The controller can heat the ultraviolet light emitting diode through the substrate.

Abstract: A method for increasing the luminous intensity of an ultraviolet light emitting diode includes heating an ultraviolet light emitting diode to a working temperature, and supplying electricity to the ultraviolet light emitting diode at the working temperature to make the ultraviolet light emitting diode emit ultraviolet light. An apparatus for increasing the luminous intensity of an ultraviolet light emitting diode includes a substrate, an ultraviolet light emitting diode mounted on the substrate, an electric heater mounted on the substrate, a temperature sensor, and a controller electrically connected to the ultraviolet light emitting diode, the electric heater, and the temperature sensor. The controller can heat the ultraviolet light emitting diode through the substrate.