Abstract: A method for processing a biomedical material using a supercritical fluid includes introducing the supercritical fluid into a cavity. The supercritical fluid is doped with a hydrogen isotope-labeled compound, an organic metal compound, an element selecting from a halogen element, oxygen, sulfur, selenium, phosphorus or arsenic, or a compound containing the element. The biomedical material in the cavity is modified by the supercritical fluid at a temperature above a critical temperature of the supercritical fluid and a pressure above a critical pressure of the supercritical fluid.

Abstract: A method for processing an electronic component using a supercritical fluid includes introducing the supercritical fluid into a cavity. The supercritical fluid is doped with a hydrogen isotope-labeled compound, an organic metal compound, an element selecting from a halogen element, oxygen, sulfur, selenium, phosphorus or arsenic, or a compound containing the element. An electronic component in the cavity is modified by the supercritical fluid at a temperature above a critical temperature of the supercritical fluid and a pressure above a critical pressure of the supercritical fluid.

Abstract: The present disclosure provides a reaction method with homogeneous-phase supercritical fluid, including: preparing a supercritical fluid and a solute; supplying the supercritical fluid and the solute into a molecular sieve component to uniformly mix the supercritical fluid and the solute in the molecular sieve component, forming a homogeneous-phase supercritical fluid; and supplying the homogeneous-phase supercritical fluid into a reaction chamber for conducting a reaction.

Abstract: A resistive random access memory overcomes the low durability of the conventional resistive random access memory. The resistive random access memory includes a first electrode, a second electrode, an enclosing layer and an oxygen-containing resistance changing layer. The first and second electrodes are separate from each other. The enclosing layer forms a first via-hole. The oxygen-containing resistance changing layer is arranged for the first via-hole. The first and second electrodes and the enclosing layer jointly enclose the oxygen-containing resistance changing layer. Each of the first electrode, the second electrode and the enclosing layer is made of an element not containing oxygen.

Abstract: A resistive random access memory does not encounter the undesired effects caused by sneak current which occurs when a conventional resistive random access memory operates in an integrated circuit. The resistive random access memory includes a first electrode layer, a first insulating layer, an oxygen-containing layer, a second insulating layer and a second electrode layer. The first insulating layer is arranged on the first electrode layer. The oxygen-containing layer is arranged on the first insulating layer and includes an oxide doped with a metal element. The metal element does not exceed 10% of the oxygen-containing layer. The second insulating layer is arranged on the oxygen-containing layer, and the second electrode layer is arranged on the second insulating layer. In this arrangement, the undesired effects caused by sneak current can be effectively eliminated.