Abstract: A method of manufacturing an electronic device, including the following steps, is provided. A first dielectric layer and a second dielectric layer are provided. The first dielectric layer has a first surface and a second surface opposite to each other, and the second dielectric layer has a third surface and a fourth surface opposite to each other. A first unit is formed on the first surface or the second surface of the first dielectric layer. The first dielectric layer and the second dielectric layer are combined to form a substrate structure. The second surface of the first dielectric layer faces the third surface of the second dielectric layer. A dielectric loss of the first unit is less than a dielectric loss of the first dielectric layer. The method of manufacturing the electronic device of the embodiment of the disclosure can reduce the dielectric loss by using the unit.

Abstract: An ammonium fluoride gas may be used to form a protection layer for one or more interlayer dielectric layers, one or more insulating caps, and/or one or more source/drain regions of a semiconductor device during a pre-clean etch process. The protection layer can be formed through an oversupply of nitrogen trifluoride during the pre-clean etch process. The oversupply of nitrogen trifluoride causes an increased formation of ammonium fluoride, which coats the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) with a thick protection layer. The protection layer protects the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) during the pre-clean process from being etched by fluorine ions formed during the pre-clean process.

Abstract: The present disclosure describes an apparatus with a local interconnect structure. The apparatus can include a first transistor, a second transistor, a first interconnect structure, a second interconnect structure, and a third interconnect structure. The local interconnect structure can be coupled to gate terminals of the first and second transistors and routed at a same interconnect level as reference metal lines coupled to ground and a power supply voltage. The first interconnect structure can be coupled to a source/drain terminal of the first transistor and routed above the local interconnect structure. The second interconnect structure can be coupled to a source/drain terminal of the second transistor and routed above the local interconnect structure. The third interconnect structure can be routed above the local interconnect structure and at a same interconnect level as the first and second interconnect structures.

Abstract: A stacked integrated circuit (IC) device and a method are disclosed. The stacked IC device includes a first semiconductor element. The first substrate includes a dielectric block in the first substrate; and a plurality of first conductive features formed in first inter-metal dielectric layers over the first substrate. The stacked IC device also includes a second semiconductor element bonded on the first semiconductor element. The second semiconductor element includes a second substrate and a plurality of second conductive features formed in second inter-metal dielectric layers over the second substrate. The stacked IC device also includes a conductive deep-interconnection-plug coupled between the first conductive features and the second conductive features. The conductive deep-interconnection-plug is isolated by dielectric block, the first inter-metal-dielectric layers and the second inter-metal-dielectric layers.

Abstract: An antenna device is provided. The antenna device includes a first substrate, a first conductive layer, a second substrate, a liquid-crystal layer, a buffer layer, and an alignment layer. The first conductive layer is disposed on the first substrate, and the first conductive layer has an opening. The second substrate is disposed opposite to the first substrate. The second conductive layer is disposed on the second substrate. The liquid-crystal layer is disposed between the first conductive layer and the second conductive layer. The buffer layer is disposed in the opening and adjacent to an overlapping region of the first conductive layer and the second conductive layer. The alignment layer is disposed between the first conductive layer and the liquid-crystal layer.

Abstract: A ratchet wrench is provided, including a main body, a driving member, a ratchet assembly and a switch button. The main body has a receiving chamber, and a circumferential wall of the receiving chamber has an interior circumferential toothed portion. The driving member is disposed within the receiving chamber and rotatable about an axial direction. The ratchet assembly includes a first ratchet member and a second ratchet member which are swingably arranged in the driving member. The switch button is pivoted to the driving member, extends along a direction lateral to the axial direction and is swingable to be on a first position and a second position.

Abstract: A sounding body contains: an accommodation chamber and at least one locking tab. A respective one of the at least one locking tab includes a fixing groove. The sounding body further contains a speaker unit which includes a fitting member having a cavity, and the cavity is engaged with a speaker. A first support loop is fitted on the fitting member and has multiple first extension portions, and each of the multiple first extension portions has a first positioning knob. The fitting member is fitted with a second support loop on which multiple second extension portions obliquely extend, and each of the multiple second extension portions has a second positioning knob engaged with the fixing groove of the respective one locking tab. Furthermore, a shock-absorbing space is defined between the speaker unit and the accommodation chamber.

Abstract: An antenna device is provided. The antenna device includes a first substrate, a first conductive layer, a second substrate, a liquid-crystal layer, a buffer layer, and an alignment layer. The first conductive layer is disposed on the first substrate, and the first conductive layer has an opening. The second substrate is disposed opposite to the first substrate. The second conductive layer is disposed on the second substrate. The liquid-crystal layer is disposed between the first conductive layer and the second conductive layer. The buffer layer is disposed in the opening and adjacent to an overlapping region of the first conductive layer and the second conductive layer. The alignment layer is disposed between the first conductive layer and the liquid-crystal layer.

Abstract: A ratchet wrench is provided, including a main body, a driving member, a ratchet assembly and a switch button. The main body has a receiving chamber, and a circumferential wall of the receiving chamber has an interior circumferential toothed portion. The driving member is disposed within the receiving chamber and rotatable about an axial direction. The ratchet assembly includes a first ratchet member and a second ratchet member which are swingably arranged in the driving member. The switch button is pivoted to the driving member, extends along a direction lateral to the axial direction and is swingable to be on a first position and a second position.

Abstract: The invention relates to a process for forming a cobalt-iron alloy film. In particular, the process is performed under ultrasonic vibrations to form the cobalt-iron alloy film. The cobalt-iron alloy film consists of about 75-95 wt. % of cobalt, 4.5-20 wt. % of iron and 0.5-5 wt. % of phosphorus and also has peaks at about 43.2, 45.1, 50.4, 65.5, 74.1 and 83.2 2-theta degree (2?) in the X-ray diffraction pattern.

Abstract: The invention discloses a soldering structure and process of making the same. The soldering structure comprises: a solder, a Sn—Co—Fe intermetallic compound having a thickness less than 10 ?m and a diffusion barrier layer. The process of making the soldering structure is to react the solder containing Sn with an alloy consisting of 85˜95 wt % of Co and 5˜15 wt % of Fe at the temperature between 250 and 300° C.

Abstract: The present disclosure provides a novel method to fabricate the basic nickel carbonate particulates. The nickel content in the basic nickel carbonate particulates fabricated by this invention (51-53 mass %) is higher than the present commercialized products (44-46 mass %). Basic nickel carbonate is an important intermediate to prepare NiO and pure Ni particles, and NiO and pure Ni particles are important materials in electronic industrial. Therefore, basic nickel carbonate has its potential market.

Abstract: The invention discloses a soldering structure and process of making the same. The soldering structure comprises: a solder, a Sn—Co—Fe intermetallic compound having a thickness less than 10 ?m and a diffusion barrier layer. The process of making the soldering structure is to react the solder containing Sn with an alloy consisting of 85˜95 wt % of Co and 5˜15 wt % of Fe at the temperature between 250 and 300° C.

Abstract: The present disclosure provides a novel method to fabricate the basic nickel carbonate particulates. The nickel content in the basic nickel carbonate particulates fabricated by this invention (51-53 mass %) is higher than the present commercialized products (44-46 mass %). Basic nickel carbonate is an important intermediate to prepare NiO and pure Ni particles, and NiO and pure Ni particles are important materials in electronic industrial. Therefore, basic nickel carbonate has its potential market.

Abstract: The invention discloses a novel method to prepare the Ni(Sn, Sb)3 skutterudite compound. Skutterudite compounds are thermoelectric materials, which can transform heat into electric energy. Besides, the Ni(Sn, Sb)3 compound is also an anode material of Li ion battery. The solid state diffusion method is used to prepare the Ni(Sn1-x, Sbx)3 compound. Compared to traditional physical or chemical processes, the method disclosed in the invention is simpler and operates at a lower temperature. By the method according to the invention, the composition of the Ni(Sn, Sb)3 compound can be adjusted to fulfill variety requirements for different applications. It is noteworthy that the invention can prepare ternary compounds. In comparison with the frequently used binary compounds such as Ni3Sn4 or Cu6Sn5, the invention can produce materials with better performance.

Abstract: A ratchet wrench includes a head and a handle. The head is assembled with a switch member and an active mechanism which provides a ratchet function. The switch member is switched to selectively engage the active mechanism, so that the active mechanism may be fixed or be rotatable to achieve the ratchet function. Therefore, the wrench is provided with the function of ratchet which makes the wrench easy to use and with the function of fixing which makes the structure strength of the wrench strengthened. Conveniency of using wrench is improved.

Abstract: A ratchet wrench includes a head and a handle. The head is assembled with a switch member and an active mechanism which provides a ratchet function. The switch member is switched to selectively engage the active mechanism, so that the active mechanism may be fixed or be rotatable to achieve the ratchet function. Therefore, the wrench is provided with the function of ratchet which makes the wrench easy to use and with the function of fixing which makes the structure strength of the wrench strengthened. Conveniency of using wrench is improved.

Abstract: The invention discloses a novel method to prepare the Ni(Sn, Sb)3 skutterudite compound. Skutterudite compounds are thermoelectric materials, which can transform heat into electric energy. Besides, the Ni(Sn, Sb)3 compound is also an anode material of Li ion battery. The solid state diffusion method is used to prepare the Ni(Sn1-x, Sbx)3 compound. Compared to traditional physical or chemical processes, the method disclosed in the invention is simpler and operates at a lower temperature. By the method according to the invention, the composition of the Ni(Sn, Sb)3 compound can be adjusted to fulfill variety requirements for different applications. It is noteworthy that the invention can prepare ternary compounds. In comparison with the frequently used binary compounds such as Ni3Sn4 or Cu6Sn5, the invention can produce materials with better performance.