Abstract: A light-emitting device includes a semiconductor light-emitting stack; a current injected portion formed on the semiconductor light-emitting stack; an extension portion having a first branch radiating from the current injected portion and having a first width, and a first length greater than the first width, and a second branch extending from the first branch and having a second width larger than the first width, and a second length greater than the second width; and an electrical contact structure between the second branch and the semiconductor light-emitting stack.

Abstract: The present invention is related to a light-emitting device. The present invention illustrates a vertical light-emitting device in one embodiment, comprising the following elements: a conductive substrate includes a through-hole, a patterned semiconductor structure disposed on a first surface of the substrate, a first bonding pad and a second bonding pad disposed on a second surface of the substrate, a conductive line passing through the through-hole connecting electrically the semiconductor structure layer, and an insulation layer on at least one sidewall of the through-hole insulates the conductive line form the substrate.

Abstract: Disclosed is a method for testing a light-emitting device comprising the steps of: providing a light-emitting device comprising a plurality of light-emitting diodes; driving the plurality of the light-emitting diodes with current; generating an image of the light-emitting device; and determining a luminous intensity of each of the light-emitting diodes with the image. An apparatus for testing a light-emitting device comprising a plurality of light-emitting diodes is also disclosed. The apparatus comprises: a current source to provide a current to drive the plurality of the light-emitting diodes; an image receiving device for receiving an image of the light-emitting device in the driven state; and a processing unit for determining a luminous intensity of each of the light-emitting diodes with the image.

Abstract: A semiconductor light-emitting device having a thinned structure comprises a thinned structure formed between a semiconductor light-emitting structure and a carrier. The manufacturing method comprises the steps of forming a semiconductor light-emitting structure above a substrate; attaching the semiconductor light-emitting structure to a support; thinning the substrate to form a thinned structure; forming or attaching a carrier to the thinned substrate; and removing the support.

Abstract: This application discloses a light-emitting device with narrow dominant wavelength distribution and a method of making the same. The light-emitting device with narrow dominant wavelength distribution at least includes a substrate, a plurality of light-emitting stacked layers on the substrate, and a plurality of wavelength transforming layers on the light-emitting stacked layers, wherein the light-emitting stacked layer emits a first light with a first dominant wavelength variation; the wavelength transforming layer absorbs the first light and converts the first light into the second light with a second dominant wavelength variation; and the first dominant wavelength variation is larger than the second dominant wavelength variation.

Abstract: A light-emitting device includes a semiconductor light-emitting stack; a current injected portion formed on the semiconductor light-emitting stack; an extension portion having a first branch radiating from the current injected portion and having a first width, and a first length greater than the first width, and a second branch extending from the first branch and having a second width larger than the first width, and a second length greater than the second width; and an electrical contact structure between the second branch and the semiconductor light-emitting stack.

Abstract: The application discloses a light-emitting diode chip level package structure including: a permanent substrate having a first surface and a second surface; a first electrode on the first surface; a second electrode on the second surface; an adhesive layer on where the first surface of the permanent substrate is not covered by the first electrode; a growth substrate on the adhesive layer; a patterned semiconductor structure on the growth substrate; a third electrode and a fourth electrode on the patterned semiconductor structure and electrically connect with the patterned semiconductor structure; an electrical connecting structure on the sidewall of the patterned semiconductor structure electrically connecting the third electrode and the fourth electrode with the first electrode; and an insulation layer located on the side wall of the patterned semiconductor structure and between the electrical connecting structure for electrically insulating the patterned semiconductor structure.

Abstract: A light emitting diode having a transparent substrate and a method for manufacturing the same. The light emitting diode is formed by creating two semiconductor multilayers and bonding them. The first semiconductor multilayer is formed on a non-transparent substrate. The second semiconductor multilayer is created by forming an amorphous interface layer on a transparent substrate. The two semiconductor multilayers are bonded and the non-transparent substrate is removed, leaving a semiconductor multilayer with a transparent substrate.

Abstract: A light-emitting semiconductor apparatus includes a light-emitting structure, a reflective structure, and a carrier. The light-emitting structure includes a first type semiconductor layer, a second type semiconductor layer, and a light-emitting layer positioned between the first type semiconductor layer and the second type semiconductor layer. The reflective structure has a first transparent conductive layer, a first patterned reflective layer, a second transparent conductive layer, and a second patterned reflective layer. The first patterned reflective layer is disposed between the first transparent conductive layer and the second transparent conductive layer, and has an opening for physically connecting the first transparent conductive layer and the second transparent conductive layer. The second transparent conductive layer is disposed between the first patterned reflective layer and the second patterned reflective layer.

Abstract: A semiconductor light-emitting device having a thinned structure comprises a thinned structure formed between a semiconductor light-emitting structure and a carrier. The manufacturing method comprises the steps of forming a semiconductor light-emitting structure above a substrate; attaching the semiconductor light-emitting structure to a support; thinning the substrate to form a thinned structure; forming or attaching a carrier to the thinned substrate; and removing the support.

Abstract: A light-emitting device comprising a semiconductor light-emitting stack, comprising a light emitting area; an electrode formed on the semiconductor light-emitting stack, wherein the electrode comprises a current injected portion and an extension portion; a current blocking structure formed between the current injected portion and the semiconductor light-emitting stack, and formed between a first part of the extension portion and the semiconductor light-emitting stack; and an electrical contact structure formed between a second part of the extension portion and the semiconductor light-emitting stack.

Abstract: An embodiment of the invention discloses a wavelength converting system. The wavelength converting system comprises: a wavelength converter having a first area and a second area; a first light source disposed under the first area and inducing a first mixed light being visible above the first area; a second light source disposed under the second area and inducing a second mixed light being visible above the second area; and a carrier supporting the first light source and the second light source. The first light source and the second light source have a dominant wavelength difference of 1 nm˜20 nm, and the first mixed light and the second mixed light have a color temperature difference less than 100K.

Abstract: A semiconductor light-emitting device having a thinned structure comprises a thinned structure formed between a semiconductor light-emitting structure and a carrier. The manufacturing method comprises the steps of forming a semiconductor light-emitting structure above a substrate; attaching the semiconductor light-emitting structure to a support; thinning the substrate to form a thinned structure; forming or attaching a carrier to the thinned substrate; and removing the support.

Abstract: A stacked electrode includes an optical match layer, a transparent conductive layer, and a metal layer. A complex refractive index of the optical match layer is N1, and N1=n1?ik1, wherein n1 represents a refractive index of the optical match layer and k1 represents an extinction coefficient of the optical match layer. A complex refractive index of the transparent conductive layer is N2, and N2=n2?ik2, wherein n2 represents a refractive index of the transparent conductive layer, k2 represents an extinction coefficient of the transparent conductive layer, n1>n2, and k1<k2. The metal layer is disposed between the optical match layer and the transparent conductive layer. A photo-electric device having the above-mentioned stacked electrode is also provided.

Abstract: A flexible projective capacitive touch sensor structure includes following elements. A roll of first flexible transparent substrate has sensing unit regions thereon, and each of the sensing unit regions includes at least two first transparent patterned electrodes and at least three second transparent patterned electrodes. Bridging wires respectively stride over the corresponding first transparent patterned electrodes and respectively and electrically bridge the second transparent patterned electrodes located at two sides of each of the first transparent patterned electrodes to form at least one conducting wire. Dielectric pads are disposed between the bridging wires and the first transparent patterned electrodes. First connection wires are connected to the first transparent patterned electrodes and have first electrical connection terminals.

Abstract: A flexible resistive touch sensor structure includes a roll of first and a roll of second flexible transparent substrates, first connection wires, second connection wires, spacer dots and insulation frames. The rolls of first and the second flexible transparent substrate have first and second electrode unit regions thereon respectively. Each first electrode unit region includes at least one first transparent electrode. Each second electrode unit region includes at least one second transparent electrode correspondingly facing to the first electrode unit regions. The first connection wires are connected to the first transparent electrodes. The second connection wires are connected to the second transparent electrodes. The spacer dots are disposed between the first and the second transparent electrodes.

Abstract: A light-emitting device and manufacturing method thereof are disclosed. The light-emitting device includes a substrate, a semiconductor light-emitting structure, a filter layer, and a fluorescent conversion layer. The method comprises forming a semiconductor light-emitting structure over a substrate, forming a filter layer over the semiconductor light-emitting structure, and forming a fluorescent conversion layer over the filter layer.

Abstract: A touch panel roll and a manufacturing method thereof are provided. The method includes providing a first structure roll and a second structure roll. A manufacturing method of the first structure roll includes forming an opening in a first flexible substrate, wherein conductive lines respectively connected with electrodes extend to the opening. A manufacturing method of the second structure roll includes forming conductive lines respectively connected with electrodes and independent conductive lines corresponding to the conductive lines in the first structure roll on a second flexible substrate, wherein one end of each conductive line in the second structure roll is located at a position corresponding to the opening. The method further includes laminating the first structure roll and the second structure roll by a roll-to-roll process.

Abstract: This invention provides a color passive matrix bistable liquid crystal display system, in which one respective scan line corresponds to sub-pixels of same color and neighboring scan lines correspond to sub-pixels of different colors. The scan lines are grouped in accordance with the colors of the sub-pixels corresponding thereto such that different scan driving voltages can be provided to the sub-pixels of different colors when the scan lines are scanned. By way of the arrangement of the sub-pixels, different scan driving voltages are switched to the respective scan lines in accordance with the colors of the sub-pixels corresponding thereto. As a result, a demand that the sub-pixels of different colors require different scan driving voltages is satisfied. The image quality is improved.

Abstract: The application is related to a method of forming a substrate of a light-emitting diode by composite electroplating. The application illustrates a light-emitting diode comprising the following elements: a light-emitting epitaxy structure, a reflective layer disposed on the light-emitting epitaxy structure, a seed layer disposed on the reflective layer, a composite electroplating substrate disposed on the seed layer by composite electroplating, and a protection layer disposed on the composite electroplating substrate.