Patents by Inventor Chih-Chiang Lu

Chih-Chiang Lu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for forming light-emitting device
    Patent number: 9276166
    Abstract: A method for forming a light-emitting device of the present application comprises providing a wafer; forming a first plurality of light-emitting elements on the wafer; providing a first connection structure to connect each of the first plurality of light-emitting elements; and applying a current flow to one of the first plurality of light-emitting elements for testing at least one electrical property of the light-emitting element while no current flow is applied to the remaining of the first plurality of light-emitting elements.
    Type: Grant
    Filed: April 13, 2012
    Date of Patent: March 1, 2016
    Assignee: EPISTAR CORPORATION
    Inventors: Chia-Liang Hsu, Chih-Chiang Lu
  • Light-emitting device with intermediate layer
    Patent number: 9269870
    Abstract: This disclosure discloses a light-emitting device. The light-emitting device comprises: a substrate; an intermediate layer formed on the substrate; a transparent bonding layer; a first semiconductor window layer bonded to the semiconductor layer through the transparent bonding layer; and a light-emitting stack formed on the first semiconductor window layer. The intermediate layer has a refractive index between the refractive index of the substrate and the refractive index of the first semiconductor window layer.
    Type: Grant
    Filed: September 27, 2013
    Date of Patent: February 23, 2016
    Assignee: EPISTAR CORPORATION
    Inventors: Chien-Fu Huang, Shiuan-Leh Lin, Chih-Chiang Lu, Chia-Liang Hsu
  • SEMICONDUCTOR LIGHT-EMITTING DEVICE
    Publication number: 20160005941
    Abstract: A semiconductor light-emitting device includes a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer includes a periphery surface surrounding the active layer; a plurality of vias penetrating the semiconductor stack to expose the first semiconductor layer; and a patterned metal layer formed on the plurality of vias and covered the periphery surface of the first semiconductor layer.
    Type: Application
    Filed: September 14, 2015
    Publication date: January 7, 2016
    Inventors: Min-Yen Tsai, Chao-Hsing Chen, Tsung-Hsun Chiang, Wen-Hung Chuang, Bo-Jiun Hu, Tzu-Yao Tseng, Jia-Kuen Wang, Kuan-Yi Lee, Yi-Ming Chen, Chun-Yu Lin, Tsung-Hsien Yang, Tzu-Chieh Hsu, Kun-De Lin, Yao-Ning Chan, Chih-Chiang Lu
  • Light emitting device
    Patent number: 9196806
    Abstract: This disclosure discloses a light-emitting chip comprises: a light-emitting stack, having a side wall, comprising an active layer emitting light; and a light-absorbing layer having a first portion surrounding the side wall and being configured to absorb 50% light toward the light-absorbing layer.
    Type: Grant
    Filed: October 10, 2013
    Date of Patent: November 24, 2015
    Assignee: EPISTAR CORPORATION
    Inventors: Chun-Yu Lin, Tzu-Chieh Hsu, Fu-Chun Tsai, Yi-Wen Huang, Chih-Chiang Lu
  • Light-emitting array
    Patent number: 9153944
    Abstract: A light-emitting array comprises a plurality of light-emitting elements, wherein each of the plurality of light-emitting elements comprises a first semiconductor stack; and a plurality of bridge structures connected to the plurality of light-emitting elements, wherein the plurality of light-emitting elements are spaced apart by the plurality of bridge structures, wherein each of the plurality of bridge structures comprise a second semiconductor stack which has the same epitaxial stack as the first semiconductor stack.
    Type: Grant
    Filed: February 5, 2014
    Date of Patent: October 6, 2015
    Assignee: EPISTAR CORPORATION
    Inventors: Shih-Chang Lee, Chih-Chiang Lu, Yi-Hung Lin, Wu-Tsung Lo, Ta-Chuan Kuo
  • LIGHT-EMITTING ARRAY
    Publication number: 20150222094
    Abstract: A light-emitting array comprises a plurality of light-emitting elements, wherein each of the plurality of light-emitting elements comprises a first semiconductor stack; and a plurality of bridge structures connected to the plurality of light-emitting elements, wherein the plurality of light-emitting elements are spaced apart by the plurality of bridge structures, wherein each of the plurality of bridge structures comprise a second semiconductor stack which has the same epitaxial stack as the first semiconductor stack.
    Type: Application
    Filed: February 5, 2014
    Publication date: August 6, 2015
    Applicant: Epistar Corporation
    Inventors: Shih-Chang LEE, Chih-Chiang LU, Yi-Hung LIN, Wu-Tsung LO, Ta-Chuan KUO
  • LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF
    Publication number: 20150144980
    Abstract: The present disclosure provides a light-emitting device and manufacturing method thereof. The light-emitting device comprises: a metal connecting structure; a barrier layer on the metal connecting structure, the barrier layer comprising a first metal multilayer on the metal connecting structure and a second metal multilayer on the first metal multilayer; a metal reflective layer on the barrier layer; and a light-emitting stack electrically coupled to the metal reflective layer, wherein the first metal multilayer comprises a first metal layer comprising a first metal material and a second metal layer comprising a second metal material, and the second metal multilayer comprises a third metal layer comprising a third metal material and a fourth metal layer comprising a fourth metal material.
    Type: Application
    Filed: November 28, 2014
    Publication date: May 28, 2015
    Inventors: Fu Chun TSAI, Wen Luh LIAO, Shih I CHEN, Chia Liang HSU, Chih Chiang LU
  • LIGHT-EMITTING DEVICE
    Publication number: 20150144975
    Abstract: A light-emitting device comprises a substrate; and a semiconductor stack comprising a III-V group material formed on the substrate, wherein the substrate comprises a first amorphous portion adjacent to the semiconductor stack, and a portion having a material different from that of the first amorphous portion and away from the semiconductor stack, wherein the first amorphous portion has a first refractive index, the portion has a second refractive index, and the first refractive index is higher than the second refractive index and lower than a refractive index of the semiconductor stack.
    Type: Application
    Filed: November 25, 2013
    Publication date: May 28, 2015
    Applicant: EPISTAR CORPORATION
    Inventors: Fu-Chun TSAI, Wen-Luh LIAO, Yao-Ru CHANG, Shih-I CHEN, Chih-Chiang LU
  • SEMICONDUCTOR LIGHT-EMITTING DEVICE
    Publication number: 20150144984
    Abstract: A semiconductor light-emitting device comprises a semiconductor stack comprising a side, a first surface and a second surface opposite to the first surface, wherein the semiconductor stack further comprises a conductive via extending from the first surface to the second surface; a transparent conductive layer formed on the second surface; a first pad portion and a second pad portion formed on the first surface and electrically connected to the semiconductor stack; and an insulating layer formed between the first pad portion and the semiconductor stack and between the second pad portion and the semiconductor stack.
    Type: Application
    Filed: November 26, 2014
    Publication date: May 28, 2015
    Inventors: Yi-Ming CHEN, Chun-Yu LIN, Tsung-Hsien YANG, Tzu-Chieh HSU, Kun-De LIN, Yao-Ning CHAN, Chih-Chiang LU
  • LIGHT EMITTING DEVICE
    Publication number: 20150123151
    Abstract: A light-emitting structure includes a transparent substrate; a first transparent conductive layer formed on the transparent substrate and having a first top surface and a second top surface substantially coplanar with the first top surface; a first light-emitting stack formed on the first top surface; and a first electrode directly formed on the second top surface.
    Type: Application
    Filed: January 12, 2015
    Publication date: May 7, 2015
    Inventors: Min-Hsun HSIEH, Kuen-Ru CHUANG, Shu-Wen SUNG, Chia-Cheng LIU, Chao-Nien HUANG, Shane-Shyan WEY, Chih-Chiang LU, Ming-Jiunn JOU
  • Integrated lighting apparatus and method of manufacturing the same
    Patent number: 9024451
    Abstract: An integrated lighting apparatus comprises a first control device including a semiconductor substrate, an integrated circuit block formed above a first portion of the semiconductor substrate, and a plurality of power pads formed above the integrated circuit block; a first light emitting device formed above a second portion of the semiconductor substrate; and a through plug passing through the semiconductor substrate for electrically connecting the first control device and the first light emitting device.
    Type: Grant
    Filed: August 22, 2014
    Date of Patent: May 5, 2015
    Assignee: Epistar Corporation
    Inventors: Hsin-Mao Liu, Min-Hsun Hsieh, Tzer-Perng Chen, Meng-Yuan Hong, Cheng Nan Han, Tsung-Xian Lee, Ta-Cheng Hsu, Chih-Chiang Lu
  • LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF
    Publication number: 20150108494
    Abstract: The present disclosure provides a light-emitting device and manufacturing method thereof. The light-emitting device comprising: a light-emitting stack; and a semiconductor layer having a first surface connecting to the light-emitting stack, a second surface opposite to the first surface, and a void; wherein the void comprises a bottom part near the first surface and an opening on the second surface, and a dimension of the bottom part is larger than the dimension of the opening.
    Type: Application
    Filed: October 21, 2014
    Publication date: April 23, 2015
    Inventors: Wen-Luh LIAO, Chih-Chiang LU, Shih-Chang LEE, Hung-Ta CHENG, Hsin-Chan CHUNG, Yi-Chieh LIN
  • Light-emitting device with narrow dominant wavelength distribution and method of making the same
    Patent number: 8981411
    Abstract: This application discloses a light-emitting device with narrow dominant wavelength distribution and a method of making the same. The light-emitting device with narrow dominant wavelength distribution at least includes a substrate, a plurality of light-emitting stacked layers on the substrate, and a plurality of wavelength transforming layers on the light-emitting stacked layers, wherein the light-emitting stacked layer emits a first light with a first dominant wavelength variation; the wavelength transforming layer absorbs the first light and converts the first light into the second light with a second dominant wavelength variation; and the first dominant wavelength variation is larger than the second dominant wavelength variation.
    Type: Grant
    Filed: October 24, 2013
    Date of Patent: March 17, 2015
    Assignee: Epistar Corporation
    Inventors: Chih-Chiang Lu, Shu-Ting Hsu, Yen-Wen Chen, Chien-Yuan Wang, Ru-Shi Liu, Min-Hsun Hsieh
  • OPTOELECTRONIC SEMICONDUCTOR DEVICE
    Publication number: 20150048411
    Abstract: An optoelectronic semiconductor device includes a conductive layer; a plurality of electrical connectors extending into the conductive layer; a semiconductor system, formed on the conductive layer, electrically connected to the plurality of electrical connectors and having a side surface; an insulation material directly covering the side surface; and an electrode arranged at a position not corresponding to the plurality of electrical connectors.
    Type: Application
    Filed: October 10, 2014
    Publication date: February 19, 2015
    Inventors: Chih-Chiang LU, Wei-Chih PENG, Shiau-Huei SAN, Min-Hsun HSIEH
  • Method of making a multilayer structure
    Patent number: 8932885
    Abstract: A light emitting diode having a transparent substrate and a method for manufacturing the same. The light emitting diode is formed by creating two semiconductor multilayers and bonding them. The first semiconductor multilayer is formed on a non-transparent substrate. The second semiconductor multilayer is created by forming an amorphous interface layer on a transparent substrate. The two semiconductor multilayers are bonded and the non-transparent substrate is removed, leaving a semiconductor multilayer with a transparent substrate.
    Type: Grant
    Filed: December 28, 2012
    Date of Patent: January 13, 2015
    Assignee: Epistar Corporation
    Inventors: Min-Hsun Hsieh, Kuen-Ru Chuang, Shu-Wen Sung, Chia-Cheng Liu, Chao-Nien Huang, Shane-Shyan Wey, Chih-Chiang Lu, Ming-Jiunn Jou
  • INTERGRATED LIGHTING APPARATUS AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20140361319
    Abstract: An integrated lighting apparatus comprises a first control device including a semiconductor substrate, an integrated circuit block formed above a first portion of the semiconductor substrate, and a plurality of power pads formed above the integrated circuit block; a first light emitting device formed above a second portion of the semiconductor substrate; and a through plug passing through the semiconductor substrate for electrically connecting the first control device and the first light emitting device.
    Type: Application
    Filed: August 22, 2014
    Publication date: December 11, 2014
    Inventors: Hsin-Mao LIU, Min-Hsun HSIEH, Tzer-Perng CHEN, Meng-Yuan HONG, Cheng Nan HAN, Tsung-Xian LEE, Ta-Cheng HSU, Chih-Chiang LU
  • Light-mixing type light-emitting apparatus
    Patent number: 8882290
    Abstract: A light-mixing type light-emitting apparatus comprises a plurality of light-emitting diodes (LEDs) formed on a transparent carrier, wherein each of the LEDs with a transparent substrate emits light of a distinct color when driven, and the light beams generated from the LEDs are mixed to form a specific color. The transparent carrier setting forth in the present invention provides a mixing zone underlying the plurality of LEDs for the light beams to mix uniformly so as to improve the light-mixing efficiency of the light-emitting apparatus and shorten the mixing distance.
    Type: Grant
    Filed: May 15, 2007
    Date of Patent: November 11, 2014
    Assignee: Epistar Corporation
    Inventors: Min-Hsun Hsieh, Chia-Liang Hsu, Chien-Fu Huang, Chih-Chiang Lu, Chun-Yi Wu
  • LIGHT EMITTING DEVICE
    Publication number: 20140319558
    Abstract: This disclosure discloses a light-emitting device. The light-emitting device comprise a light-emitting stack having a first-type semiconductor layer, a second-type semiconductor layer, and an active formed between the first-type semiconductor layer and the second-type semiconductor layer and emitting a light; and a reflective structure formed on the first-type semiconductor layer and having a first interface and a second interface; wherein the critical angle of the light at the first interface is larger than that at the second interface; and wherein the reflective structure ohmically contacts the first-type semiconductor layer at the first interface.
    Type: Application
    Filed: April 24, 2014
    Publication date: October 30, 2014
    Applicant: EPISTAR CORPORATION
    Inventors: Yi-Ming CHEN, Hao-Min KU, Chih-Chiang LU, Tzu-Chieh HSU
  • Light Emitting Device
    Publication number: 20140306253
    Abstract: This disclosure relates to a light-emitting apparatus comprising a submount, a chip carrier formed on the submount, a light-emitting chip formed on the chip carrier, a reflecting cup formed on the submount and enclosing the light-emitting chip and the chip carrier, and a transparent encapsulating material for encapsulating the light-emitting chip.
    Type: Application
    Filed: April 7, 2014
    Publication date: October 16, 2014
    Applicant: EPISTAR CORPORATION
    Inventors: Min-Hsun Hsieh, Ta-Cheng Hsu, Meng-lan Tsai, Chih-Chiang Lu, Chien-Yuan Wang, Yen-Wen Chen, Ya-Ju Lee
  • Light emitting device
    Patent number: D725051
    Type: Grant
    Filed: March 31, 2014
    Date of Patent: March 24, 2015
    Assignee: Epistar Corporation
    Inventors: Hui-Fang Kao, Chih-Chiang Lu, Tzu-Chieh Hsu, Yi-Ming Chen