Patents by Inventor Chih-chieh Chen
Chih-chieh Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12224212Abstract: A semiconductor structure has a frontside and a backside. The semiconductor structure includes an isolation structure at the backside; one or more transistors at the frontside, wherein the one or more transistors have source/drain epitaxial features; two metal plugs through the isolation structure and contacting two of the source/drain electrodes from the backside; and a dielectric liner filling a space between the two metal plugs, wherein the dielectric liner partially or fully surrounds an air gap between the two metal plugs.Type: GrantFiled: May 25, 2023Date of Patent: February 11, 2025Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chun-Yuan Chen, Huan-Chieh Su, Cheng-Chi Chuang, Yu-Ming Lin, Chih-Hao Wang
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Publication number: 20250046718Abstract: Embodiments of the present disclosure provide a method for forming backside gate contacts and semiconductor fabricated thereof. A semiconductor device includes both signal outputs, such as source/drain contacts, and signal inputs, such as gate contacts, formed on a backside of the substrate. The backside gate contacts and backside source/drain contacts are formed in a self-aligned manner.Type: ApplicationFiled: November 30, 2023Publication date: February 6, 2025Inventors: Chun-Yuan CHEN, Huan-Chieh SU, Kuo-Cheng CHIANG, Chih-Hao WANG
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Publication number: 20250046667Abstract: A method includes forming a device die including forming integrated circuits on a semiconductor substrate; and forming a thermally conductive pillar extending into the semiconductor substrate. A cooling medium is attached over and contacting the semiconductor substrate to form a package, wherein the cooling medium is thermally coupled to the thermally conductive pillar.Type: ApplicationFiled: October 6, 2023Publication date: February 6, 2025Inventors: Tsung-Chieh Hsiao, Ke-Gang Wen, Chih-Pin Chiu, Hsin-Feng Chen, Yu-Bey Wu, Liang-Wei Wang, Dian-Hau Chen
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Publication number: 20250048710Abstract: An integrated circuit includes a substrate having a semiconductor layer. The integrated circuit includes a transistor. The transistor includes stacked channels above the semiconductor layer, a first source/drain region in contact with the channels, and a second source/drain region in contact with the channels. A backside source/drain contact is positioned in the substrate directly below and electrically coupled to the first source/drain region. A frontside source/drain contact is directly above and electrically coupled to the first source/drain region. A bottom semiconductor structure is positioned below the second source/drain region and in contact with the semiconductor layer.Type: ApplicationFiled: January 12, 2024Publication date: February 6, 2025Inventors: Lo-Heng CHANG, Huan-Chieh SU, Chun-Yuan CHEN, Kuo-Cheng CHIANG, Chih-Hao WANG
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Publication number: 20250038073Abstract: A package structure and a method for forming the same are provided. The package structure includes a first package structure and a second package structure. The first package structure includes a first device formed over a first substrate. The first device includes a first conductive plug connected to a through substrate via (TSV) structure formed in the first substrate. A buffer layer surrounds the first substrate. A first bonding layer is formed over the first substrate and the buffer layer. The second package structure includes a second device formed over a second substrate. A second bonding layer is formed over the second device. A hybrid bonding structure is between the first package structure and the second package structure by bonding the first bonding layer to the second bonding layer.Type: ApplicationFiled: July 27, 2023Publication date: January 30, 2025Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ke-Han SHEN, Chih-Yuan CHEN, Jiung WU, Hung-Yi Kuo, Chung-Ju LEE, Tung-He CHOU, Ji CUI, Kuo-Chung YEE, Chen-Hua YU, Cheng-Chieh HSIEH, Yu-Jen LIEN, Yian-Liang KUO, Shih-Hao TSENG, Jen Yu WANG, Tzu-Chieh Chou
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Patent number: 12211753Abstract: A semiconductor device includes a first set of nanostructures stacked over a substrate in a vertical direction, and each of the first set of nanostructures includes a first end portion and a second end portion, and a first middle portion laterally between the first end portion and the second end portion. The first end portion and the second end portion are thicker than the first middle portion. The semiconductor device also includes a first plurality of semiconductor capping layers around the first middle portions of the first set of nanostructures, and a gate structure around the first plurality of semiconductor capping layers.Type: GrantFiled: January 24, 2024Date of Patent: January 28, 2025Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Sai-Hooi Yeong, Bo-Feng Young, Chi-On Chui, Chih-Chieh Yeh, Cheng-Hsien Wu, Chih-Sheng Chang, Tzu-Chiang Chen, I-Sheng Chen
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Publication number: 20250031404Abstract: A semiconductor device may include one or more transistor structures that include a plurality of source/drain regions and a gate structure between the source/drain regions. The semiconductor device may further include one or more dielectric layers between a source/drain contact structure and a gate structure of the one or more of the transistor structures. The one or more dielectric layers may be manufactured using on oxidation treatment process to tune the dielectric constant of the one or more dielectric layers. The dielectric constant of the one or more dielectric layers may be tuned to reduce the parasitic capacitance between the source/drain contact structure and the gate structure (which are conductive structures). In particular, the dielectric constant of the one or more spacer dielectric may be tuned using the oxidation treatment process to lower the as-deposited dielectric constant of the one or more dielectric layers.Type: ApplicationFiled: July 21, 2023Publication date: January 23, 2025Inventors: Min-Hsuan LU, Sheng-Tsung WANG, Huan-Chieh SU, Tzu Pei CHEN, Hao-Heng LIU, Chien-Hung LIN, Chih-Hao WANG
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Publication number: 20250029925Abstract: An integrated circuit includes a substrate at a front side of the integrated circuit. A first gate all around transistor is disposed on the substrate. The first gate all around transistor includes a channel region including at least one semiconductor nanostructure, source/drain regions arranged at opposite sides of the channel region, and a gate electrode. A shallow trench isolation region extends into the integrated circuit from the backside. A backside gate plug extends into the integrated circuit from the backside and contacts the gate electrode of the first gate all around transistor. The backside gate plug laterally contacts the shallow trench isolation region at the backside of the integrated circuit.Type: ApplicationFiled: July 29, 2024Publication date: January 23, 2025Inventors: Chun-Yuan CHEN, Huan-Chieh SU, Cheng-Chi CHUANG, Chih-Hao WANG
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Patent number: 12204195Abstract: An electronic device includes a scattering structure, a dimming structure and a controller. The dimming structure is arranged on the scattering structure. The controller is electrically connected to the dimming structure. The controller includes a first control unit, and the first control unit is provided to adjust the transmittance of the dimming structure.Type: GrantFiled: January 16, 2024Date of Patent: January 21, 2025Assignee: INNOLUX CORPORATIONInventors: En-Hsiang Chen, Chih-Chin Kuo, Mao-Shiang Lin, Hsu-Kuan Hsu, WenQi Lin, Tzu-Chieh Lai
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Publication number: 20250006475Abstract: A surface processing equipment using energy beam including a multi-axis platform, a surface profile measuring device, an energy beam generator and a computing device is provided. The multi-axis platform is configured to carry a workpiece and move the workpiece to the first position or the second position. The surface profile measuring device has a working area, and the first position is located on the working area. The surface profile measuring device is configured to measure the workpiece to obtain surface profile. The energy beam generator is configured to provide an energy beam to the workpiece for processing, and the second position is located on a transmission path of the energy beam. The computing device is connected to the surface profile measuring device and the energy beam generator. The computing device adjusts the energy beam generator according to the error profile.Type: ApplicationFiled: September 13, 2024Publication date: January 2, 2025Applicant: Industrial Technology Research InstituteInventors: Chih-Chieh Chen, Chih-Chiang Weng, Yo-Sung Lee
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Patent number: 12154768Abstract: A surface processing equipment using energy beam including a multi-axis platform, a surface profile measuring device, an energy beam generator and a computing device is provided. The multi-axis platform is configured to carry a workpiece and move the workpiece to the first position or the second position. The surface profile measuring device has a working area, and the first position is located on the working area. The surface profile measuring device is configured to measure the workpiece to obtain surface profile. The energy beam generator is configured to provide an energy beam to the workpiece for processing, and the second position is located on a transmission path of the energy beam. The computing device is connected to the surface profile measuring device and the energy beam generator. The computing device adjusts the energy beam generator according to the error profile.Type: GrantFiled: December 26, 2020Date of Patent: November 26, 2024Assignee: Industrial Technology Research InstituteInventors: Chih-Chieh Chen, Chih-Chiang Weng, Yo-Sung Lee
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Publication number: 20240169236Abstract: The purpose of the present invention is to provide a method for calculating a VC dimension boundary in a quantum circuit, the method comprising: a step in which a computer acquires the depth L of the quantum circuit; a step in which the computer acquires the width n of the quantum circuit; and a step in which the computer identifies the VC dimension boundary in the quantum circuit on the basis of the depth L and the width n.Type: ApplicationFiled: February 28, 2022Publication date: May 23, 2024Inventors: Masaru Sogabe, Chih-chieh Chen, Kodai Shiba
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Publication number: 20230334356Abstract: Provided is a quantum circuit for solving a problem in a partially observable Markov decision process, which includes a plurality of first unitary gates U0, U1, ..., Uq applied to an initial state including n qubits in order, and a plurality of second unitary gates ?0, ?1, ..., aq+1 applied to one qubit in a |0>state in order, wherein Uq is controlled by a qubit output from ?q, and after computation by the first unitary gates and the second unitary gates is performed, the states of the n qubits are observed to confirm the state of each qubit in order to set a final state.Type: ApplicationFiled: May 19, 2021Publication date: October 19, 2023Inventors: Masaru Sogabe, Chih-chieh Chen, Kodai Shiba
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Publication number: 20230191534Abstract: A surface processing equipment using an energy beam including a measuring device, a gas source, an energy beam supply device, a multi-axis platform, and a processing device is provided. The measuring device measures a workpiece to obtain surface form information. The energy beam supply device receives a processing gas to form an energy beam. The energy beam supply device includes a rotating sleeve. Openings are on a bottom surface of the rotating sleeve. The rotating sleeve rotates along a rotation axis and supplies the energy beam from one of the openings to the workpiece. The processing device controls the gas source, the energy beam supply device, and the multi-axis platform according to the surface form information. Distances from each opening to the rotation axis are all different. The energy beam is formed into a beam shape or rings having different radii via a rotation of the energy beam supply device.Type: ApplicationFiled: September 27, 2022Publication date: June 22, 2023Applicant: Industrial Technology Research InstituteInventors: Chih-Chieh Chen, Kao-Der Chang, Chih-Chiang Weng, Yo-Sung Lee
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Publication number: 20230073231Abstract: The purpose of the present invention is to provide an information processing device capable of executing a quantum program, including: a support vector decision unit that decides a support vector from among a plurality of pieces of teacher data; and a classification execution unit that classifies target data into a plurality of classes on the basis of the support vector, wherein the classification execution unit classifies the target data on the basis of results of time evolution computation of an energy level in the case where the target data is treated as an Ising model.Type: ApplicationFiled: January 22, 2021Publication date: March 9, 2023Inventors: Masaru Sogabe, Tomah Sogabe, Chih-chieh Chen, Kodai Shiba
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Publication number: 20220208533Abstract: A surface processing equipment using energy beam including a multi-axis platform, a surface profile measuring device, an energy beam generator and a computing device is provided. The multi-axis platform is configured to carry a workpiece and move the workpiece to the first position or the second position. The surface profile measuring device has a working area, and the first position is located on the working area. The surface profile measuring device is configured to measure the workpiece to obtain surface profile. The energy beam generator is configured to provide an energy beam to the workpiece for processing, and the second position is located on a transmission path of the energy beam. The computing device is connected to the surface profile measuring device and the energy beam generator. The computing device adjusts the energy beam generator according to the error profile.Type: ApplicationFiled: December 26, 2020Publication date: June 30, 2022Applicant: Industrial Technology Research InstituteInventors: Chih-Chieh Chen, Chih-Chiang Weng, Yo-Sung Lee
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Patent number: 11324899Abstract: A nebulizer with orientation independent operation is provided. The nebulizer includes an outer tube, an inner tube provided in the outer tube, and a mesh structure disposed above an end of the outer tube. A first channel, a main channel, and a second channel are formed between the outer tube and the inner tube. When in use, capillary force is created in the main channel, such that a liquid contained in the inner tube can be transported sequentially through the second channel, the main channel, and the first channel to the mesh structure. The liquid is nebulized and dispersed into the air through vibrations of the mesh structure actuated by an annular vibration source.Type: GrantFiled: October 19, 2018Date of Patent: May 10, 2022Assignee: National Taiwan UniversityInventors: Chih-Chieh Chen, Sheng-Hsiu Huang, Chih-Wei Lin, Yu-Mei Kuo, Wei-Ren Ke
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Publication number: 20200031561Abstract: A bag structure includes a packaging bag, a plurality of cooked tapioca pearls and an impregnated liquid. The packaging bag has an interior provided with a receiving space. The packaging bag has a top end provided with an air draining section connected to the receiving space. The air draining section has an outer end provided with an adhering strip and a diaphragm. The diaphragm is located above the adhering strip and forms an air vent hole to drain hot air and to prevent the packaging bag from being exploded. The cooked tapioca pearls and the impregnated liquid are filled into the packaging bag, and the packaging bag is heated by microwaves or boiling water for diet.Type: ApplicationFiled: July 24, 2018Publication date: January 30, 2020Inventor: Chih-Chieh Chen
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Publication number: 20190374730Abstract: A nebulizer with orientation independent operation is provided. The nebulizer includes an outer tube, an inner tube provided in the outer tube, and a mesh structure disposed above an end of the outer tube. A first channel, a main channel, and a second channel are formed between the outer tube and the inner tube. When in use, capillary force is created in the main channel, such that a liquid contained in the inner tube can be transported sequentially through the second channel, the main channel, and the first channel to the mesh structure. The liquid is nebulized and dispersed into the air through vibrations of the mesh structure actuated by an annular vibration source.Type: ApplicationFiled: October 19, 2018Publication date: December 12, 2019Inventors: Chih-Chieh Chen, Sheng-Hsiu Huang, Chih-Wei Lin, Yu-Mei Kuo, Wei-Ren Ke
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Publication number: 20190357625Abstract: A motorcycle helmet providing cool and cleaning air may comprise a helmet body, having a window opening and a wearing opening, wherein two sides of the window opening pivotally connect to a goggle; the goggle can pivot to the window opening and seals it; the wearing opening is installed a first connecting device around; there is a ventilation hole on an opening position on the helmet body or the goggle; an ventilation tube with one end connected to the ventilation hole; a PAPR-typed air supplier connected to the other end of the ventilation tube, for providing external air which has been screened to remove particulate matters to the helmet body through the ventilation tube; and a guiding towel made of wind-proof materials, wherein a top end of the guiding towel has a second connecting device and the second connecting device is removably connected to the first connecting device.Type: ApplicationFiled: May 23, 2018Publication date: November 28, 2019Inventors: CHIH-CHIEH CHEN, AI-LUN JIAN, SHENG-HSIU HUANG, CHIH-WEI LIN