Patents by Inventor Chih-chieh Chen

Chih-chieh Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8796084
    Abstract: A method for removing hard masks on gates in a semiconductor manufacturing process is conducted as follows. First of all, a first gate and a second gate with hard masks are formed on a semiconductor substrate, wherein the second gate is larger than the first gate. The first gate and second gate could be associated with silicon-germanium (SiGe) source and drain regions to form p-type transistors. Next, a photoresist layer is deposited, and an opening of the photoresist layer is formed on the hard mask of the second gate. Then, the photoresist layer on the first and second gates is removed completely by etching back. Because there is no photoresist residue, the hard masks on the first and second gates can be removed completely afterwards.
    Type: Grant
    Filed: May 7, 2010
    Date of Patent: August 5, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company Ltd.
    Inventors: Hung Chih Tsai, Chih Chieh Chen, Sheng Chen Chung, Kong Beng Thei, Harry Chuang
  • Publication number: 20140137060
    Abstract: A method of inserting dummy metal and dummy via in an integrated circuit design includes inserting, by a computer, dummy metals using a place and route tool, wherein the place and route tool has timing-awareness to improve a timing performance of the integrated circuit design, and the dummy metals have a length less than or equal to a predetermined maximum length. The method further includes inserting, by the computer, dummy vias using a design-rule-checking utility separately from the inserting of the dummy metals.
    Type: Application
    Filed: January 16, 2014
    Publication date: May 15, 2014
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Hung-Yi LIU, Chung-Hsin WANG, Chih-Chieh CHEN, Jian-Yi LI
  • Patent number: 8661395
    Abstract: A method of inserting dummy metal and dummy via in an integrated circuit design. The method includes inserting, by a computer, dummy metals using a place and route tool, wherein the place and route tool has timing-awareness to improve a timing performance of the integrated circuit design. The method further includes inserting, by the computer, dummy vias using a design-rule-checking utility separately from the inserting of the dummy metals, wherein at least one of the dummy vias has a different size than at least another of the dummy vias.
    Type: Grant
    Filed: October 5, 2012
    Date of Patent: February 25, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hung-Yi Liu, Chung-Hsing Wang, Chih-Chieh Chen, Jian-Yi Li
  • Patent number: 8547131
    Abstract: A system and method for observing threshold voltage variations are provided. A ring oscillator circuit comprises a plurality of inverters arranged in a sequential loop, a plurality of test circuits having devices under test, each coupled between a respective one of the inverters and a power supply. Each test circuit has a bypass field effect transistor (FET) having a first channel coupled between the power supply and a respective one of the inverters responsive to an individual enable signal, and a FET device under test having a second channel arranged in parallel to the first channel. A method is described for determining the threshold voltage of the device under test by disabling, for one of the inverters in the ring oscillator, the first FET device such that the device under test is coupled between the power supply and the respective inverter and affects the operating frequency of the ring oscillator.
    Type: Grant
    Filed: January 15, 2010
    Date of Patent: October 1, 2013
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chung-Hsing Wang, Chih-Chieh Chen, Yi-Wei Chen
  • Patent number: 8307321
    Abstract: A method for dummy metal and dummy via insertion is provided. In one embodiment, dummy metals are inserted using a place and route tool, where the place and route tool has timing-awareness. Then, dummy vias arrays are inserted inside an overlap area of dummy metals using a design-rule-checking utility. Fine-grained dummy vias arrays are inserted in available space far away from main patterns. The dummy-patterns resulting from the inserted dummy vias are compressed using the design-rule-checking utility to reduce the size of a graphic data system file generated from the integrated circuit design. The dummy vias can be inserted with relaxed via spacing rules. The dummy metals are inserted with a constant line-end spacing between them for better process control and the maximum length of the dummy metal can be limited for smaller coupling effects. The dummy vias can have various sizes and a square or rectangular shape.
    Type: Grant
    Filed: March 22, 2010
    Date of Patent: November 6, 2012
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hung-Yi Liu, Chung-Hsing Wang, Chih-Chieh Chen, Jian-Yi Li
  • Patent number: 8232824
    Abstract: Circuits and methods for providing a pulsed clock signal for use with pulsed latch circuits are described. A variable pulse generator is coupled to form a pulsed clock output responsive to a control signal and a clock input signal. A feedback loop is provided with a pulse monitor and a pulse control circuit. Samples of the pulsed clock signal are taken by the pulse monitor and an output is formed in the form of a pattern. The pulse control circuit receives the output of the monitor and determines whether it matches a predetermined pattern. Adjustments are made to the control signal to adaptively adjust the pulsed clock signal. The feedback loop may operate continuously. In alternative embodiments the feedback loop may be powered down. Methods for adaptively controlling a pulsed clock signal are disclosed.
    Type: Grant
    Filed: January 15, 2010
    Date of Patent: July 31, 2012
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chung-Hsing Wang, Chih-Chieh Chen, Chih Sheng Tsai, Shu Yi Ying
  • Patent number: 8074460
    Abstract: A device for adjusting a temperature and a humidity using a wind power is provided. The device includes an inlet; an outlet connected to the inlet; a sprayer spraying a nebulized liquid into the device; and an airflow sensor electrically connected to the sprayer for activating the sprayer when an airflow passes through.
    Type: Grant
    Filed: July 10, 2008
    Date of Patent: December 13, 2011
    Assignee: National Taiwan University
    Inventors: An-Bang Wang, Chia-Fong Lee, Wen-Chin Tsai, I-Chun Lin, Fei-Yau Lu, Chih-Chieh Chen, Liang-Jenq Leu, Chuin-Shan Chen, Wen-Pin Shih
  • Patent number: 7995659
    Abstract: A prediction module includes a computation control unit and first to sixth processing units. The computation control unit arranges the pixels of a reference block outputted by a frame buffer appropriately according to data decoded by an entropy decoder into first and second pixel signals, and outputs the same to the first to sixth processing units in units of cycles. The processing units are controlled by the computation control unit to respectively complete corresponding computations in a cycle, and to use the computation results as values of first to sixth output signals to be correspondingly outputted in a next cycle. The computation control unit receives the first to sixth output signals, and computes the output signals so as to obtain pixel values of a macroblock to be predicted.
    Type: Grant
    Filed: January 19, 2007
    Date of Patent: August 9, 2011
    Assignee: National Cheng Kung University
    Inventors: Chih-Chieh Chen, Chih-Hung Li, Wen-Hsiao Peng, Tihao Chiang
  • Publication number: 20100295881
    Abstract: A method for simulating, fabricating, or duplicating an oil painting is provided. The oil painting digital image information is acquired by scanning or capturing an oil painting surface image, and/or digitally simulating or rendering an oil painting surface image. A white paint is daubed on a base layer. A stereoscopic oil relief model, forming a stereoscopic oil relief layer, is acquired by topographically scanning the oil painting surface in three dimensions, and simulated or duplicated onto the base layer with a white or colorless transparent composite material. An image receiving layer is daubed on the stereoscopic oil relief layer. The oil image information, forming a printed oil painting surface image, is output and printed onto the image receiving layer with an inkjet printer. A transparent resin layer is daubed on the printed oil painting surface image, protecting the printed oil painting surface image with stereoscopic oil relief layer.
    Type: Application
    Filed: May 20, 2010
    Publication date: November 25, 2010
    Applicant: NATIONAL TAIWAN UNIVERSITY OF SCIENCE & TECHNOLOGY
    Inventors: Being-Kung Yao, Ailen Li, Chih-Chieh Chen, Mei-Hwei Chang
  • Patent number: 7833848
    Abstract: A method for removing hard masks on gates in a semiconductor manufacturing process is conducted as follows. First of all, a first gate and a second gate with hard masks are formed on a semiconductor substrate, wherein the second gate is larger than the first gate. The first gate and second gate could be associated with silicon-germanium (SiGe) source and drain regions to form p-type transistors. Next, a photoresist layer is deposited, and an opening of the photoresist layer is formed on the hard mask of the second gate. Then, the photoresist layer on the first and second gates is removed completely by etching back. Because there is no photoresist residue, the hard masks on the first and second gates can be removed completely afterwards.
    Type: Grant
    Filed: September 28, 2007
    Date of Patent: November 16, 2010
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Hung Chih Tsai, Chih Chieh Chen, Sheng Chen Chung, Kong Beng Thei, Harry Chuang
  • Publication number: 20100259308
    Abstract: Circuits and methods for providing a pulsed clock signal for use with pulsed latch circuits are described. A variable pulse generator is coupled to form a pulsed clock output responsive to a control signal and a clock input signal. A feedback loop is provided with a pulse monitor and a pulse control circuit. Samples of the pulsed clock signal are taken by the pulse monitor and an output is formed in the form of a pattern. The pulse control circuit receives the output of the monitor and determines whether it matches a predetermined pattern. Adjustments are made to the control signal to adaptively adjust the pulsed clock signal. The feedback loop may operate continuously. In alternative embodiments the feedback loop may be powered down. Methods for adaptively controlling a pulsed clock signal are disclosed.
    Type: Application
    Filed: January 15, 2010
    Publication date: October 14, 2010
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chung-Hsing Wang, Chih-Chieh Chen, Chih Sheng Tsai, Shu Yi Ying
  • Publication number: 20100253382
    Abstract: A system and method for observing threshold voltage variations are provided. A ring oscillator circuit comprises a plurality of inverters arranged in a sequential loop, a plurality of test circuits having devices under test, each coupled between a respective one of the inverters and a power supply. Each test circuit has a bypass field effect transistor (FET) having a first channel coupled between the power supply and a respective one of the inverters responsive to an individual enable signal, and a FET device under test having a second channel arranged in parallel to the first channel. A method is described for determining the threshold voltage of the device under test by disabling, for one of the inverters in the ring oscillator, the first FET device such that the device under test is coupled between the power supply and the respective inverter and affects the operating frequency of the ring oscillator.
    Type: Application
    Filed: January 15, 2010
    Publication date: October 7, 2010
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chung-Hsing Wang, Chih-Chieh Chen, Yi-Wei Chen
  • Publication number: 20100242008
    Abstract: A method for dummy metal and dummy via insertion is provided. In one embodiment, dummy metals are inserted using a place and route tool, where the place and route tool has timing-awareness. Then, dummy vias arrays are inserted inside an overlap area of dummy metals using a design-rule-checking utility. Fine-grained dummy vias arrays are inserted in available space far away from main patterns. The dummy-patterns resulting from the inserted dummy vias are compressed using the design-rule-checking utility to reduce the size of a graphic data system file generated from the integrated circuit design. The dummy vias can be inserted with relaxed via spacing rules. The dummy metals are inserted with a constant line-end spacing between them for better process control and the maximum length of the dummy metal can be limited for smaller coupling effects. The dummy vias can have various sizes and a square or rectangular shape.
    Type: Application
    Filed: March 22, 2010
    Publication date: September 23, 2010
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Hung-Yi LIU, Chung-Hsing WANG, Chih-Chieh CHEN, Jian-Yi LI
  • Publication number: 20100216287
    Abstract: A method for removing hard masks on gates in a semiconductor manufacturing process is conducted as follows. First of all, a first gate and a second gate with hard masks are formed on a semiconductor substrate, wherein the second gate is larger than the first gate. The first gate and second gate could be associated with silicon-germanium (SiGe) source and drain regions to form p-type transistors. Next, a photoresist layer is deposited, and an opening of the photoresist layer is formed on the hard mask of the second gate. Then, the photoresist layer on the first and second gates is removed completely by etching back. Because there is no photoresist residue, the hard masks on the first and second gates can be removed completely afterwards.
    Type: Application
    Filed: May 7, 2010
    Publication date: August 26, 2010
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: HUNG CHIH TSAI, CHIH CHIEH CHEN, SHENG CHEN CHUNG, KONG BENG THEI, HARRY CHUANG
  • Publication number: 20090108085
    Abstract: A device for adjusting a temperature and a humidity using a wind power is provided. The device includes an inlet; an outlet connected to the inlet; a sprayer spraying a nebulized liquid into the device; and an airflow sensor electrically connected to the sprayer for activating the sprayer when an airflow passes through.
    Type: Application
    Filed: July 10, 2008
    Publication date: April 30, 2009
    Applicant: NATIONAL TAIWAN UNIVERSITY
    Inventors: An-Bang WANG, Chia-Fong LEE, Wen-Chin TSAI, I-Chun LIN, Fei-Yau LU, Chih-Chieh CHEN, Liang-Jenq LEU, Chuin-Shan CHEN, Wen-Pin SHIH
  • Publication number: 20090087955
    Abstract: A method for removing hard masks on gates in a semiconductor manufacturing process is conducted as follows. First of all, a first gate and a second gate with hard masks are formed on a semiconductor substrate, wherein the second gate is larger than the first gate. The first gate and second gate could be associated with silicon-germanium (SiGe) source and drain regions to form p-type transistors. Next, a photoresist layer is deposited, and an opening of the photoresist layer is formed on the hard mask of the second gate. Then, the photoresist layer on the first and second gates is removed completely by etching back. Because there is no photoresist residue, the hard masks on the first and second gates can be removed completely afterwards.
    Type: Application
    Filed: September 28, 2007
    Publication date: April 2, 2009
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Hung Chih Tsai, Chih Chieh Chen, Sheng Chen Chung, Kong Beng Thei, Harry Chuang
  • Patent number: 7377187
    Abstract: An aerosol size-selective impactor for reducing particle bounce includes a main structure, a buffering layer, and a dehydration preventing layer. This main structure with an inlet and an outlet has a central channel and a receiving cavity. There are many nozzles in the inlet. The buffering layer is filled in the receiving cavity. The dehydration preventing layer is coated on the buffering layer for reducing the dehydration of water contained in the buffering layer. So, this invention utilizes the design of the receiving cavity to receive both layers. Its accuracy is high. Its sampling time lasts longer. It can endure vibrations. This invention can yield the particle bounce effect with lower cost. And, its application scope is wide.
    Type: Grant
    Filed: September 14, 2005
    Date of Patent: May 27, 2008
    Assignee: Chung Shan Medical University
    Inventors: Chane-Yu Lai, Sheng-Hsiu Huang, Jia-Yun Lin, Chih-Chieh Chen
  • Patent number: 7337759
    Abstract: The invention involves an engine that the cylinder block contains a coupled piston formed by a main piston, an external piston. The external piston is sleeved outside of the main piston and uses the rods on the two sides to connect to the heart-shape groove on the two sides of the crankshaft inside the crankcase at the bottom of the cylinder block. It moves with the main piston in an upward stroke and in a downward stroke. It forms a direct fuel injection device in the cylinder without carburetor. It does not need to add lubricants in the fuels. Besides, the engine has increased compression ratio.
    Type: Grant
    Filed: October 5, 2006
    Date of Patent: March 4, 2008
    Inventors: Yung-ching Chen, Chih-chieh Chen
  • Patent number: D583366
    Type: Grant
    Filed: May 10, 2007
    Date of Patent: December 23, 2008
    Assignee: Universal Scientific Industrial Co., Ltd.
    Inventor: Chih-Chieh Chen
  • Patent number: D583367
    Type: Grant
    Filed: May 10, 2007
    Date of Patent: December 23, 2008
    Assignee: Universal Scientific Industrial Co., Ltd.
    Inventor: Chih-Chieh Chen