Abstract: A ultra-compact coupler designed to sample the actual output power of a power amplifier and which is “VSWR insensitive”, such that reflected power is essentially not coupled to a detector circuit and only forward power is detected and processed. In a first embodiment, a coupler is situated between the final amplifier stage of a power amplifier and an output impedance matching network, and is specially configured for operation in a low impedance environment in conjunction with a detector circuit, thereby substantially reducing the areal size of the coupler. In a second embodiment, a coupler is integrated within an output impedance matching network coupled to the final amplifier stage of a power amplifier so as to share an inductor between the coupler and the output impedance matching network, thereby further substantially reducing the areal size of the coupler.

Abstract: A ultra-compact coupler designed to sample the actual output power of a power amplifier and which is “VSWR insensitive”, such that reflected power is essentially not coupled to a detector circuit and only forward power is detected and processed. In a first embodiment, a coupler is situated between the final amplifier stage of a power amplifier and an output impedance matching network, and is specially configured for operation in a low impedance environment in conjunction with a detector circuit, thereby substantially reducing the areal size of the coupler. In a second embodiment, a coupler is integrated within an output impedance matching network coupled to the final amplifier stage of a power amplifier so as to share an inductor between the coupler and the output impedance matching network, thereby further substantially reducing the areal size of the coupler.

Abstract: A flexible multi-path RF adaptive tuning network switch architecture that counteracts impedance mismatch conditions arising from various combinations of coupled RF band filters, particularly in a Carrier Aggregation-based (CA) radio system. In one version, a digitally-controlled tunable matching network is coupled to a multi-path RF switch in order to provide adaptive impedance matching for various combinations of RF band filters. Optionally, some or all RF band filters include an associated digitally-controlled filter pre-match network to further improve impedance matching. In a second version, some or all RF band filters coupled to a multi-path RF switch include a digitally-controlled phase matching network to provide necessary per-band impedance matching. Optionally, a digitally-controlled tunable matching network may be included on the common port of the multi-path RF switch to provide additional impedance matching capability.

Abstract: A switch architecture having open reflective unselected ports. Signals can be selectively coupled between a common port and at least one selectable port through series connected switches. When one or more port is selected, the remaining ports are opened. In addition, associated “shuntable” switches from each of the selectable ports to ground are always open, regardless of the ON or OFF state of the series switches; thus, there is no normally active connection of the selectable ports to ground, but the presence of the shuntable switches provides electrostatic discharge protection for all ports. Embodiments of the invention allow configurability between a traditional architecture and an open reflective unselected port architecture, and include integrated circuit and field effect transistor embodiments.

Abstract: A flexible multi-path RF adaptive tuning network switch architecture that counteracts impedance mismatch conditions arising from various combinations of coupled RF band filters, particularly in a Carrier Aggregation-based radio system. In one version, a digitally-controlled tunable matching network is coupled to a multi-path RF switch in order to provide adaptive impedance matching for various combinations of RF band filters. Optionally, some or all RF band filters also include an associated digitally-controlled filter pre-match network to further improve impedance matching. In a second version, some or all RF band filters coupled to a multi-path RF switch include a digitally-controlled phase matching network to provide necessary per-band impedance matching. Optionally, a digitally-controlled tunable matching network may also be included on the common port of the multi-path RF switch to provide additional impedance matching capability.

Abstract: An improved architecture for a radio frequency (RF) power amplifier, impedance matching network, and selector switch. One aspect of embodiments of the invention is splitting the functionality of a final stage impedance matching network (IMN) into two parts, comprising a base set of off-chip IMN components and an on-chip IMN tuning component. The on-chip IMN tuning component may be a digitally tunable capacitor (DTC). In one embodiment, an integrated circuit having a power amplifier, an on-chip IMN tuner, and a selector switch is configured to be coupled to an off-chip set of IMN components. In another embodiment, an integrated circuit having an on-chip IMN tuner and a selector switch is configured to be coupled through an off-chip set of IMN components to a separate integrated circuit having an RF power amplifier.

Abstract: A receiver front end capable of receiving and processing intraband non-contiguous carrier aggregate (CA) signals using multiple low noise amplifiers (LNAs) is disclosed herein. A cascode having a “common source” input stage and a “common gate” output stage can be turned on or off using the gate of the output stage. A first switch is provided that allows a connection to be either established or broken between the source terminal of the input stage of each cascode. Further switches used for switching degeneration inductors, gate/sources caps and gate to ground caps for each legs can be used to further improve the matching performance of the invention.

Abstract: An improved architecture for a radio frequency (RF) power amplifier, impedance matching network, and selector switch. One aspect of embodiments of the invention is splitting the functionality of a final stage impedance matching network (IMN) into two parts, comprising a base set of off-chip IMN components and an on-chip IMN tuning component. The on-chip IMN tuning component may be a digitally tunable capacitor (DTC). In one embodiment, an integrated circuit having a power amplifier, an on-chip IMN tuner, and a selector switch is configured to be coupled to an off-chip set of IMN components. In another embodiment, an integrated circuit having an on-chip IMN tuner and a selector switch is configured to be coupled through an off-chip set of IMN components to a separate integrated circuit having an RF power amplifier.

Abstract: A receiver front end capable of receiving and processing intraband non-contiguous carrier aggregate (CA) signals using multiple low noise amplifiers (LNAs) is disclosed herein. A cascode having a “common source” input stage and a “common gate” output stage can be turned on or off using the gate of the output stage. A first switch is provided that allows a connection to be either established or broken between the source terminal of the input stage of each cascode. Further switches used for switching degeneration inductors, gate/sources caps and gate to ground caps for each legs can be used to further improve the matching performance of the invention.

Abstract: A receiver front end capable of receiving and processing intraband non-contiguous carrier aggregate (CA) signals using multiple low noise amplifiers (LNAs) is disclosed herein. A cascode having a “common source” input stage and a “common gate” output stage can be turned on or off using the gate of the output stage. A first switch is provided that allows a connection to be either established or broken between the source terminal of the input stage of each cascode. Further switches used for switching degeneration inductors, gate/sources caps and gate to ground caps for each legs can be used to further improve the matching performance of the invention.

Abstract: An operation method of a memory cell includes steps of applying a pre pulse before a read pulse is applied, wherein the pre pulse is larger than a maximum threshold voltage or less than a lowest threshold voltage.

Abstract: A switch architecture having open reflective unselected ports. Signals can be selectively coupled between a common port and at least one selectable port through series connected switches. When one or more port is selected, the remaining ports are opened. In addition, associated “shuntable” switches from each of the selectable ports to ground are always open, regardless of the ON or OFF state of the series switches; thus, there is no normally active connection of the selectable ports to ground, but the presence of the shuntable switches provides electrostatic discharge protection for all ports. Embodiments of the invention allow configurability between a traditional architecture and an open reflective unselected port architecture, and include integrated circuit and field effect transistor embodiments.

Abstract: A memory structure includes a memory cell, and the memory cell includes following elements. A first gate is disposed on a substrate. A stacked structure includes a first dielectric structure, a channel layer, a second dielectric structure and a second gate disposed on the first gate, a first charge storage structure disposed in the first dielectric structure and a second charge storage structure disposed in the second dielectric structure. The first charge storage structure is a singular charge storage unit and the second charge storage structure comprises two charge storage units which are physically separated. A channel output line physically connected to the channel layer. A first dielectric layer is disposed on the first gate at two sides of the stacked structure. A first source or drain and a second source or drain are disposed on the first dielectric layer and located at two sides of the channel layer.

Abstract: A flexible multi-path RF adaptive tuning network switch architecture that counteracts impedance mismatch conditions arising from various combinations of coupled RF band filters, particularly in a Carrier Aggregation-based radio system. In one version, a digitally-controlled tunable matching network is coupled to a multi-path RF switch in order to provide adaptive impedance matching for various combinations of RF band filters. Optionally, some or all RF band filters also include an associated digitally-controlled filter pre-match network to further improve impedance matching. In a second version, some or all RF band filters coupled to a multi-path RF switch include a digitally-controlled phase matching network to provide necessary per-band impedance matching. Optionally, a digitally-controlled tunable matching network may also be included on the common port of the multi-path RF switch to provide additional impedance matching capability.

Abstract: A switch architecture having open reflective unselected ports. Signals can be selectively coupled between a common port and at least one selectable port through series connected switches. When one or more port is selected, the remaining ports are opened. In addition, associated “shuntable” switches from each of the selectable ports to ground are always open, regardless of the ON or OFF state of the series switches; thus, there is no normally active connection of the selectable ports to ground, but the presence of the shuntable switches provides electrostatic discharge protection for all ports. Embodiments of the invention allow configurability between a traditional architecture and an open reflective unselected port architecture, and include integrated circuit and field effect transistor embodiments.

Abstract: A high performance integrated tunable impedance matching network with coupled merged inductors. Embodiments include a combination of merged multiport constructively coupled spiral inductors and tunable capacitors configured to reduce insertion losses, circuit size, and optimization time while maintaining a high Q factor for the coupled spiral inductors.

Abstract: A high performance integrated tunable impedance matching network with coupled merged inductors. Embodiments include a combination of merged multiport constructively coupled spiral inductors and tunable capacitors configured to reduce insertion losses, circuit size, and optimization time while maintaining a high Q factor for the coupled spiral inductors. Some embodiments integrate one or more filter circuits with a tunable impedance matching network, useful in conjunction with such applications as radio frequency power amplifiers.

Abstract: A high performance integrated tunable impedance matching network with coupled merged inductors. Embodiments include a combination of merged multiport constructively coupled spiral inductors and tunable capacitors configured to reduce insertion losses, circuit size, and optimization time while maintaining a high Q factor for the coupled spiral inductors.

Abstract: A memory structure includes a memory cell, and the memory cell includes following elements. A first gate is disposed on a substrate. A stacked structure includes a first dielectric structure, a channel layer, a second dielectric structure and a second gate disposed on the first gate, a first charge storage structure disposed in the first dielectric structure and a second charge storage structure disposed in the second dielectric structure. The first charge storage structure is a singular charge storage unit and the second charge storage structure comprises two charge storage units which are physically separated. A channel output line physically connected to the channel layer. A first dielectric layer is disposed on the first gate at two sides of the stacked structure. A first source or drain and a second source or drain are disposed on the first dielectric layer and located at two sides of the channel layer.

Abstract: A memory device is provided. The memory device includes a substrate, a plurality of semiconductor strip structures, a first doped region, a plurality of second doped regions, a plurality of first contacts, and a plurality of second contacts. Each of the semiconductor strip structures extends along a first direction. The first doped region includes a plurality of first portions and a second portion. Each of the first portions is located on a lower part of the corresponding semiconductor strip structure. The second portion is located on a surface of the substrate, and the first portions are connected to the second portion. Each of the second doped regions is located on an upper part of the corresponding semiconductor strip structure. Each of the first contacts is electrically connected to the second portion of the first doped region. Each of the second contacts is electrically connected to the corresponding second doped region.