Abstract: An organic light emitting device including a first substrate, at least an organic light emitting unit, a plurality of first electrode contacts and a plurality of second electrode contacts. The organic light emitting unit is disposed on the first substrate. The first electrode contacts are disposed on the first substrate at a margin of the organic light emitting unit, wherein adjacent two first electrode contacts are spaced by a first interval, and an end of each first electrode contact is electrically connected to the organic light emitting unit. The second electrode contacts are disposed on the first substrate at a margin of the organic light emitting unit, wherein adjacent two second electrodes are spaced by a second interval, an end of each second electrode contact is electrically connected to the organic light emitting unit, and the second interval is different from the first interval.

Abstract: A method for producing an organic light emitting diode (OLED) unit includes: (a) forming an electrode pad on a substrate; (b) forming an insulating layer to cover and to partially expose the electrode pad; (c) forming an electrically conductive oxide layer on the insulating layer in such a manner that the exposed electrode pad is covered by and electrically coupled to the electrically conductive oxide layer; and (d) forming an organic illuminating multilayer structure on the substrate, the organic illuminating multilayer structure including an inner electrode that is electrically coupled to the electrode pad.

Abstract: A light emitting device includes a main body that defines an inner space therein and that includes a light-transmissive part, a light emitting unit disposed in the inner space, and an electrode. The electrode has a device-connecting portion electrically connected to and extending from the light emitting unit, a power-connecting portion disposed outwardly of the main body and electrically connected to an electric power source, and a resistance-configurable portion that extends between and that interconnects electrically the device-connecting portion and the power-connecting portion and that is configurable to set resistance of the electrode.

Abstract: An organic light emitting diode (OLED) illuminating device includes a substrate, first and second electrode units and a light emitting structure. The first electrode unit is disposed on the substrate, the light emitting structure is disposed on the first electrode unit, and the second electrode unit is disposed on the light emitting structure. The light emitting structure includes a patterned organic light emitting layer having blue light emitting zones and yellow light emitting zones that are spaced apart from each other, that are arranged on the same plane and that are electrically insulated from each other. An area of the blue light emitting zones is larger than that of the yellow light emitting zones.

Abstract: An electroluminescent display device includes an active matrix organic light emitting diode (AMOLED). A pixel array is formed on a light transmissive substrate and electrically coupled to a common power transmission line and conductive material that substantially fills a channel formed between a cover and the substrate. The channel and the conductive may include a cross-sectional area of about 0.5 to 5 mm2. The conductive material may be a gel, fluid, powder or conductive epoxy and assists the common power transmission line in transmitting power. The substantial cross-sectional area makes the common power transmission line resistant to burn out and is capable of carrying large currents such as needed for display devices having a length or width of 30 inches.

Abstract: A conducting device for a display device is disclosed. It comprises one or more non-conducting base lines formed in predetermined locations on a substrate layer, and one or more conducting line structures formed over the non-conducting base lines on the substrate layer, wherein the non-conducting base lines raise the conducting line structures in height for increasing a cross-sectional area thereof for reducing a resistance of the conducting line structures.

Abstract: An active matrix organic light-emitting diode (OLED) display and pixel structure thereof. The pixel structure comprises a first transistor, a storage capacitor, a second transistor, and an OLED. The first transistor has a gate terminal coupled to a scan signal and a drain terminal coupled to a data signal. The storage capacitor has two terminals coupled to a source terminal of the first transistor and a reference node with a second voltage. The second transistor has a gate terminal coupled to the source terminal of the first transistor and a source terminal coupled to the reference node. The OLED has a cathode coupled to a drain terminal of the second transistor and an anode coupled to a first voltage, higher than the second voltage. The second transistor is an amorphous silicon thin film transistor (a-Si TFT), and an equivalent channel width/length (W/L) ratio of the second transistor exceeds 10.

Abstract: An active matrix organic light emitting display (AM-OLED) and a method of forming the same. The AM-OLED has a plurality of pixel areas arranged in a matrix form. Each pixel area has at least two amorphous silicon TFTs, a display area and a light-shielding layer. The amorphous silicon TFT has an amorphous silicon layer serving as a channel region. The display area is formed by a transparent-conductive layer. The light-shielding layer covers at least the amorphous silicon layer of the amorphous silicon TFT and exposes the display area.

Abstract: An emissive circuit capable of adaptively adjusting brightness is as follows. A brightness adjusting circuit is for receiving the incident ray and is adapted to adjust the power of the driving device according to the intensity of the incident ray. Thus, the driving device, for driving and controlling the brightness of the emissive device according to the intensity of the incident ray, and automatically adjusted itself for having proper brightness and contrast.

Abstract: An electroluminescent display device includes an active matrix organic light emitting diode (AMOLED). A pixel array is formed on a light transmissive substrate and electrically coupled to a common power transmission line and conductive material that substantially fills a channel formed between a cover and the substrate. The channel and the conductive may include a cross-sectional area of about 0.5 to 5 mm2. The conductive material may be a gel, fluid, powder or conductive epoxy and assists the common power transmission line in transmitting power. The substantial cross-sectional area makes the common power transmission line resistant to burn out and is capable of carrying large currents such as needed for display devices having a length or width of 30 inches.

Abstract: An organic electroluminescent display including a plurality of red pixels, each of the red pixels includes a first driving thin film transistor and a red organic light emitting diode, wherein the first driving thin film transistor has a first width/length ratio (W/L)R; a plurality of green pixels, each of the green pixels includes a second driving thin film transistor and a green organic light emitting diode, wherein the second driving thin film transistor has a second width/length ratio (W/L)G; and a plurality of blue pixels, each of the blue pixels includes a third driving thin film transistor and a blue organic light emitting diode, wherein the third driving thin film transistor has a third width/length ratio (W/L)B. In particular, the ratio of the third width/length ratio to the second width/length ratio ((W/L)B/(W/L)G) is from 1.1 to 5.3.

Abstract: A pixel array comprises a plurality of display areas where light is irradiated to achieve image display. The display areas of one row of pixels form a nonuniform distribution along the corresponding scan line so as to reduce the visual appearance of the dark lines created by dark areas between two adjacent rows of pixels.

Abstract: A display driving circuit. The circuit comprises a first electrode from which a data signal is output, a second electrode from which a scan signal is output, a capacitor having a first and second end with a voltage difference therebetween, a light emitting diode having an anode and cathode coupled to a first power supply providing a first voltage(Vss), a first switch having a first end coupled to the first electrode to receive the data signal and a second end coupled to the first end of the capacitor, a second switch having a first end coupled to a second power supply providing a second voltage(VDD) and a second end coupled to the anode of the light emitting diode, and a third switch having a first end coupled to a third power supply providing a third voltage(Vref) and a second end coupled to the second end of the capacitor.

Abstract: A conducting device for a display device is disclosed. It comprises one or more non-conducting base lines formed in predetermined locations on a substrate layer, and one or more conducting line structures formed over the non-conducting base lines on the substrate layer, wherein the non-conducting base lines raise the conducting line structures in height for increasing a cross-sectional area thereof for reducing a resistance of the conducting line structures.

Abstract: An active matrix organic light-emitting diode (OLED) display and pixel structure thereof. The pixel structure comprises a first transistor, a storage capacitor, a second transistor, and an OLED. The first transistor has a gate terminal coupled to a scan signal and a drain terminal coupled to a data signal. The storage capacitor has two terminals coupled to a source terminal of the first transistor and a reference node with a second voltage. The second transistor has a gate terminal coupled to the source terminal of the first transistor and a source terminal coupled to the reference node. The OLED has a cathode coupled to a drain terminal of the second transistor and an anode coupled to a first voltage, higher than the second voltage. The second transistor is an amorphous silicon thin film transistor (a-Si TFT), and an equivalent channel width/length (W/L) ratio of the second transistor exceeds 10.

Abstract: An OLED display and pixel structure thereof. The pixel structure comprises a first transistor, a storage capacitor, a second transistor and an OLED. The first transistor has a gate terminal coupled to a scan signal and a drain terminal coupled to a data signal. The storage capacitor has two terminals coupled to a source terminal of the first transistor and a reference node, which has a second voltage. The second transistor has a gate terminal coupled to the source terminal of the first transistor and a source terminal coupled to the reference node. The OLED has a cathode coupled to a drain terminal of the second transistor and an anode coupled to a first voltage, higher than the second voltage. The first transistor or the second transistor is an amorphous silicon thin film transistor (a-Si TFT), and a light efficiency of the OLED is no less than 11 cd/A.

Abstract: An active matrix organic light emitting display (AM-OLED) and a method of forming the same. The AM-OLED has a plurality of pixel areas arranged in a matrix form. Each pixel area has at least two amorphous silicon TFTs, a display area and a light-shielding layer. The amorphous silicon TFT has an amorphous silicon layer serving as a channel region. The display area is formed by a transparent-conductive layer. The light-shielding layer covers at least the amorphous silicon layer of the amorphous silicon TFT and exposes the display area.

Abstract: A method of fabricating an active matrix organic light emitting diode display is described. A substrate having a light-emitting region and a non-light-emitting region thereon is provided, and pixel structures have been formed in the light-emitting region. A driving IC is formed on the substrate in the non-emitting region and electrically coupled with the pixel structures. A packaging cap is disposed over the substrate and adhered to the substrate. The packaging cap covers the emitting region of the substrate and the driving IC remains being exposed. Since the driving IC is exposed from the packaging cap, the driving IC can be tested or repaired directly when the driving IC is abnormal.

Abstract: An encapsulation of an organic electro-luminescence element is provided. A luminescent body is formed on the inner surface of a first substrate. A second substrate serves as a planar sealing case. A sealing agent is formed on the rims of the first substrate and the second substrate to bond the first substrate and the second substrate and form an airtight space. A first drying layer is formed on the inner surface of the second substrate within the airtight space.

Abstract: n active matrix organic light emitting diode display and a fabrication method of the same. A substrate having a display area and a non-display area is provided. A plurality of pixel structures is formed in the display area, and a plurality of transparent conductive lines to electrically connect the pixel structures are formed on the substrate. The transparent conductive lines extend from the display area to the non-display area. A photosensitive glue is formed at a periphery of the display area, and a cap is formed to cover the display area. The cap is adhered to the substrate using the photosensitive glue. A radiation step is performed on a rear surface of the substrate to cure the photosensitive glue. A driving chip electrically connected to the pixel structures via the transparent conductive lines is formed in the non-display area.