Patents by Inventor Chih-Fu Chang

Chih-Fu Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20080270927
    Abstract: A spring-forming control system and its control method for a spring forming machine in which the spring-forming control system uses a host computer to provide graphical spring parameter setting, program modification, and dragline-method program modification graphical interfaces that are selectively switchable on a display monitor. After setting of spring processing parameters through the spring parameter setting interface, a trial production is done subject to a spring parameter auto-generation software built in the spring-forming control system, and then the production is started if the trial meets the requirements, or the spring processing parameters are modified through the spring parameter setting interface, program modification interface, or dragline-method program modification interface if the trial does not meet the requirements, and then a further trial production is performed till the shaped spring meets the requirements.
    Type: Application
    Filed: September 7, 2007
    Publication date: October 30, 2008
    Inventor: Chih-Fu Chang
  • Patent number: 7318792
    Abstract: An exercise machine that allows an exercise similar to push-ups to be performed safely and has a base, a lever, a pad, a leveling rod, and a resilient element. The base has at least one bracket. The lever is attached pivotally to the bracket and has a front end, a rear end and a handlebar attached to the front end. The pad is attached to the rear end of the lever. The leveling rod is connected pivotally to the bracket and the pad. The resilient element is connected to the pad and the base.
    Type: Grant
    Filed: November 10, 2006
    Date of Patent: January 15, 2008
    Inventors: Chih-Liang Chen, Chih-Fu Chang
  • Patent number: 7176081
    Abstract: A novel, low-temperature metal deposition method which is suitable for depositing a metal film on a substrate, such as in the fabrication of metal-insulator-metal (MIM) capacitors, is disclosed. The method includes depositing a metal film on a substrate using a deposition temperature of less than typically about 270 degrees C. The resulting metal film is characterized by enhanced thickness uniformity and reduced grain agglomeration which otherwise tends to reduce the operational integrity of a capacitor or other device of which the metal film is a part. Furthermore, the metal film is characterized by intrinsic breakdown voltage (Vbd) improvement.
    Type: Grant
    Filed: May 20, 2004
    Date of Patent: February 13, 2007
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Fu Chang, Yen-Hsiu Chen, Hung-Jen Lin, Ming-Chu King, Ching-Hwanq Su, Chih-Mu Huang, Yun Chang
  • Publication number: 20050260811
    Abstract: A novel, low-temperature metal deposition method which is suitable for depositing a metal film on a substrate, such as in the fabrication of metal-insulator-metal (MIM) capacitors, is disclosed. The method includes depositing a metal film on a substrate using a deposition temperature of less than typically about 270 degrees C. The resulting metal film is characterized by enhanced thickness uniformity and reduced grain agglomeration which otherwise tends to reduce the operational integrity of a capacitor or other device of which the metal film is a part. Furthermore, the metal film is characterized by intrinsic breakdown voltage (Vbd) improvement.
    Type: Application
    Filed: May 20, 2004
    Publication date: November 24, 2005
    Inventors: Chih-Fu Chang, Yen-Hsiu Chen, Hung-Jen Lin, Ming-Chu King, Ching-Hwano Su, Chih-Mu Huang, Yun Chang
  • Patent number: 6660630
    Abstract: A method for selectively anisotropically a semiconductor feature to form a tapered sidewall profile including providing a semiconductor wafer including an anisotropically etched feature formed in at least one dielectric insulating layer including a relatively larger width dimension portion overlying and encompassing at least one relatively smaller diameter dimension portion the smaller diameter dimension portion further including a bottom portion including an overlying liner; and, selectively anisotropically etching the anisotropically etched feature according to a reactive ion etching (RIE) process to form a tapered sidewall portion of the at least one relatively smaller diameter portion.
    Type: Grant
    Filed: October 10, 2002
    Date of Patent: December 9, 2003
    Assignee: Taiwan Semiconductor Manufacturing Co. Ltd.
    Inventors: Chih-Fu Chang, Yu-Chun Huang
  • Patent number: 6642153
    Abstract: A method for plasma treating an anisotropically etched semiconductor feature with improved removal of residual polymeric material including providing a semiconductor wafer having an anisotropically etched feature opening further including an edge portion defining a diameter of the anisotropically etched feature opening the anisotropically etched feature opening further comprising polymeric material disposed within the anisotropically etched feature opening; plasma treating the at least one opening with an oxygen containing plasma to substantially remove the polymeric material including removing a portion of the edge portion.
    Type: Grant
    Filed: July 31, 2002
    Date of Patent: November 4, 2003
    Assignee: Taiwan Semiconductor Manufacturing Co. Ltd
    Inventors: Chih-Fu Chang, Yu-Chun Huang