Abstract: A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above-mentioned memory device is also provided.

Abstract: A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above- mentioned memory device is also provided.

Abstract: A semiconductor device includes a substrate, a shallow trench isolation structure, two epitaxial structures, one or more semiconductor channel layers, a gate metal layer and a gate spacer. The shallow trench isolation structure is disposed over the substrate. The epitaxial structures are disposed over the shallow trench isolation structure. The one or more semiconductor channel layers connect the two epitaxial structures. The gate metal layer is located between the epitaxial structures and engages the one or more semiconductor channel layers. The gate spacer is in contact with a sidewall of the gate metal layer. From a cross-section view, a neck portion of the gate metal layer adjacent to and along the one or more semiconductor channel layers, and one side of the neck portion is retracted by a distance relative to the gate spacer, and the distance is greater than 0 and less than or equal to 2 nanometers.

Abstract: A semiconductor device according to the present disclosure includes a first gate structure and a second gate structure aligned along a direction, a first metal layer disposed over the first gate structure, a second metal layer disposed over the second gate structure, and a gate isolation structure extending between the first gate structure and the second gate structure as well as between the first metal layer and the second metal layer.

Abstract: Semiconductor device and the manufacturing method thereof are disclosed. An exemplary semiconductor device comprises a dielectric layer formed over a conductive feature; a semiconductor stack formed over the dielectric layer, wherein the semiconductor stack including semiconductor layers stacked up and separated from each other; a first metal gate structure and a second metal gate structure formed over a channel region of the semiconductor stack, wherein the first metal gate structure and the second metal gate structure wrap each of the semiconductor layers of the semiconductor stack; and a first epitaxial feature disposed between the first metal gate structure and the second metal gate structure over a first source/drain region of the semiconductor stack, wherein the first epitaxial feature extends through the dielectric layer and contacts the conductive feature.

Abstract: A flip-chip bonding structure includes a substrate and a chip. A lead of the substrate includes a body, a hollow opening, a bonding island and at least one connecting bridge. The hollow opening is in the body and surrounded by the body. The bonding island is located in the hollow opening such that there is a hollow space in the hollow opening and located between the body and the bonding island. The connecting bridge is located in the hollow space to connect the body and the bonding island. A bump of the chip is bonded to the bonding island by a solder. The solder is restricted on the bonding island and separated from the body by the hollow space so as to avoid the solder from overflowing to the body and avoid the chip from shifting.

Abstract: Provided is a method for synthesizing a perovskite quantum dot film, including: preparing a cellulose nanocrystal (CNC) solution, wherein the CNC solution includes a plurality of CNCs with sulfate groups; preparing a precursor solution; mixing the CNC solution and the precursor solution to form a mixed solution; and filtering and drying the mixed solution to form a perovskite quantum dot film.

Abstract: Provided is a method for synthesizing a perovskite quantum dot film, including: preparing a cellulose nanocrystal (CNC) solution, wherein the CNC solution includes a plurality of CNCs with sulfate groups; preparing a precursor solution; mixing the CNC solution and the precursor solution to form a mixed solution; and filtering and drying the mixed solution to form a perovskite quantum dot film.

Abstract: A package structure with conformal shielding includes a substrate providing electrically connected inner grounding structures, a chip module mounted on the substrate, a molding compound covering the chip module and one surface of the substrate, and a conductive shielding layer covering the molding compound and the lateral sides of the substrate, and electrically connected with a part of the inner grounding structures. The substrate further provides one or multiple independent conductive structures electrically connected with the conductive shielding layer and exposed to the outside. By measuring the resistance value between one independent conductive structure and the conductive shielding layer or another independent conductive structure or one ground contact and then comparing the measured resistance value with a predetermined reference value, the EMI shielding performance of the package structure is determined.

Abstract: A package structure with conformal shielding includes a substrate providing electrically connected inner grounding structures, a chip module mounted on the substrate, a molding compound covering the chip module and one surface of the substrate, and a conductive shielding layer covering the molding compound and the lateral sides of the substrate, and electrically connected with a part of the inner grounding structures. The substrate further provides one or multiple independent conductive structures electrically connected with the conductive shielding layer and exposed to the outside. By measuring the resistance value between one independent conductive structure and the conductive shielding layer or another independent conductive structure or one ground contact and then comparing the measured resistance value with a predetermined reference value, the EMI shielding performance of the package structure is determined.

Abstract: A lens device includes: a housing formed with a module-mounting hole that has a hole axis, and provided with a mounting surface that is disposed radially and outwardly of the module-mounting hole; a lens module having a lens axis; and an alignment correction unit for mounting the lens module on the housing at the module-mounting hole. The alignment correction unit includes a module barrel coupled to the lens module, an elastically deformable component clamped by the module barrel toward the mounting surface of the housing, and a set of screw fasteners for fastening the module barrel onto the mounting surface at angularly spaced apart locations relative to the hole axis. Depths of threaded engagement of the screw fasteners with the mounting surface are independently adjustable to permit adjustment of the lens axis of the lens module relative to the hole axis of the module-mounting hole.

Abstract: A lens device includes: a housing formed with a module-mounting hole that has a hole axis, and provided with a mounting surface that is disposed radially and outwardly of the module-mounting hole; a lens module having a lens axis; and an alignment correction unit for mounting the lens module on the housing at the module-mounting hole. The alignment correction unit includes a module barrel coupled to the lens module, an elastically deformable component clamped by the module barrel toward the mounting surface of the housing, and a set of screw fasteners for fastening the module barrel onto the mounting surface at angularly spaced apart locations relative to the hole axis. Depths of threaded engagement of the screw fasteners with the mounting surface are independently adjustable to permit adjustment of the lens axis of the lens module relative to the hole axis of the module-mounting hole.