Abstract: An integrated circuit having high performance CMOS devices with good short channel effects may be made by forming a gate structure over a substrate; forming pocket implant regions and source/drain extensions in the substrate; forming spacers along sides of the gate structure; and thermal annealing the substrate when forming the spacers, the thermal annealing performed at an ultra-low temperature. An integrated circuit having high performance CMOS devices with low parasitic junction capacitance may be made by forming a gate structure over a substrate; forming pocket implant regions and source/drain extensions in the substrate; forming spacers along sides of the gate structure; performing a low dosage source/drain implant; and performing a high dosage source/drain implant.