Abstract: Disclosed is a wireless transmission system, including a mobile electronic device with first screen information, a computer with second screen information, and a docking station coupled to the computer. When accommodating the mobile electronic device, the docking station transmits an electrical signal to the mobile electronic device, wherein the computer confirms that the mobile electronic device is located on the docking station according to a Bluetooth Low Energy signal sent by the mobile electronic device, the computer transmits Wi-Fi service set identification information to the mobile electronic device through a Bluetooth Low Energy protocol, the computer and the mobile electronic device are connected to the same Wi-Fi access point, and the mobile electronic device sends the first screen information back to the computer. Accordingly, the problem that the computer and the mobile electronic device cannot transmit data or screen information to each other through a transmission line is solved.

Abstract: In a method of manufacturing a semiconductor device, a fin structure is formed by patterning a semiconductor layer, and an annealing operation is performed on the fin structure. In the patterning of the semiconductor layer, a damaged area is formed on a sidewall of the fin structure, and the annealing operation eliminates the damaged area.

Abstract: A device includes an active region, a gate structure, a source/drain epitaxial structure, an epitaxial layer, a metal alloy layer, a contact, and a contact etch stop layer. The gate structure is across the active region. The source/drain epitaxial structure is over the active region and adjacent the gate structure. The epitaxial layer is over the source/drain epitaxial structure. The metal alloy layer is over the epitaxial layer. The contact is over the metal alloy layer. The contact etch stop layer lines sidewalls of the source/drain epitaxial structure. The metal alloy layer is spaced apart from the contact etch stop layer.

Abstract: A semiconductor device and methods of forming the same are disclosed. The semiconductor device includes a substrate, first and second source/drain (S/D) regions, a channel between the first and second S/D regions, a gate engaging the channel, and a contact feature connecting to the first S/D region. The contact feature includes first and second contact layers. The first contact layer has a conformal cross-sectional profile and is in contact with the first S/D region on at least two sides thereof. In embodiments, the first contact layer is in direct contact with three or four sides of the first S/D region so as to increase the contact area. The first contact layer includes one of a semiconductor-metal alloy, an III-V semiconductor, and germanium.

Abstract: Systems and methods for natural language generation by an edge computing device are disclosed. In one embodiments, a method comprises: receiving, by an edge computing device, event data from an edge event; determining, by the edge computing device, that a network connection to a cloud server is not available; extracting, by the edge computing device, features of the event data; predicting, by a local neural network of the edge computing device, an action for the edge computing device to take based on the features of the event data, wherein the action is associated with a confidence level; and determining, by the edge computing device, whether the confidence level meets a predetermined threshold value.

Abstract: An anti-peep light source module includes a light source module and a viewing angle switching module. The light source module has a light source and a light guide plate (LGP) and has light emitting elements arranged along a first direction. The viewing angle switching module is located on a transmission path of an illumination beam of the light source module and includes a viewing angle limiting element and a viewing angle adjusting element configured to change a viewing angle of the illumination beam. The viewing angle limiting element has a grating structure and is located between the viewing angle adjusting element and the light source module. an included angle between an extension direction of the grating structure and the first direction is within a range from 88 degrees to 92 degrees. The anti-peep light source module and A display device achieve favorable optical performance, user experience, and production yield.

Abstract: A semiconductor device and methods of forming the same are disclosed. The semiconductor device includes a substrate, first and second source/drain (S/D) regions, a channel between the first and second S/D regions, a gate engaging the channel, and a contact feature connecting to the first S/D region. The contact feature includes first and second contact layers. The first contact layer has a conformal cross-sectional profile and is in contact with the first S/D region on at least two sides thereof. In embodiments, the first contact layer is in direct contact with three or four sides of the first S/D region so as to increase the contact area. The first contact layer includes one of a semiconductor-metal alloy, an III-V semiconductor, and germanium.

Abstract: A moiré pattern imaging device includes a light-transmissive film and a light-shielding film. The light-transmissive film includes a plurality of imaging units and a light-incident surface and a light-emergent surface opposite to each other. The plurality of imaging units are disposed on the light-incident surface, the light-emergent surface, or a combination thereof and are arranged in two dimensions to form an imaging unit array. The light-shielding film includes a plurality of light-transmissive regions. The light-transmissive regions are arranged in two dimensions to form a light-transmissive array, and the light-shielding film is overlaid on the light-incident surface or the light-emergent surface. The light-transmissive array corresponds to the imaging unit array. The imaging unit array and the light-transmissive array together form a moiré pattern effect to generate an image magnification effect.

Abstract: A semiconductor device includes a substrate; a fin structure formed on a substrate; and a gate feature formed over the fin structure, the gate feature comprising a gate dielectric layer, wherein the gate dielectric layer traverses the fin structure to overlay a central portion of the fin structure and opposite side portions of the fin structure that are located in respective undercuts formed in respective portions of a dielectric layer located adjacent to opposite sidewalls of the gate feature, wherein the undercuts extend beyond respective sidewalls of the gate feature and away from the central portion of the fin structure.

Abstract: A semiconductor device includes a substrate; a fin structure formed on a substrate; and a gate feature formed over the fin structure, the gate feature comprising a gate dielectric layer, wherein the gate dielectric layer traverses the fin structure to overlay a central portion of the fin structure and opposite side portions of the fin structure that are located in respective undercuts formed in respective portions of a dielectric layer located adjacent to opposite sidewalls of the gate feature, wherein the undercuts extend beyond respective sidewalls of the gate feature and away from the central portion of the fin structure.

Abstract: A moiré image processing device is provided, including a light-transmitting film, a light sensor, and an image processor. The light-transmitting film includes a plurality of microlenses, and a light-incident surface and a light-exit surface, where the microlenses are disposed on the light-incident surface, the light-exit surface, or a combination thereof according to a distribution pattern. The light sensor includes a photosensitive surface, where the photosensitive surface faces the light-exit surface, there are a plurality of pixels on the photosensitive surface, and the pixels sense the microlenses to obtain a photosensitive image corresponding to the distribution pattern. The image processor is coupled to the light sensor, where the image processor performs, according to a virtual image and the photosensitive image, image processing of simulating a moiré effect to generate a moiré image, where the virtual image corresponds to the distribution pattern and is similar to the photosensitive image.

Abstract: A moiré pattern imaging device includes a light-transmitting film and an optical sensor. The light-transmitting film includes a plurality of microlenses, and a light-incident surface and a light-exit surface opposite to each other. The plurality of microlenses are disposed on the light-incident surface, the light-exit surface or a combination thereof, and the plurality of microlenses are arranged in two dimensions to form a microlens array. The optical sensor includes a photosurface. The photosurface faces the light-exit surface of the light-transmitting film, the photosurface is provided with a plurality of pixels, and the plurality of pixels are arranged in two dimensions to form a pixel array. The microlens array and the pixel array correspondingly form a moiré pattern effect to produce an imaging magnification effect, and the photosurface of the optical sensor senses light and forms a moiré pattern magnification image.

Abstract: A data processing method and circuit based on convolution computation are provided. In the data processing method, a shared memory structure is provided, convolution computation of data in batches or duplicated data is provided, an allocation mechanism for storing data into multiple memories is provided, and a signed padding mechanism is provided. Therefore, a flexible and efficient convolution computation mechanism and structure are provided.

Abstract: A data processing method and circuit based on convolution computation are provided. In the data processing method, a shared memory structure is provided, convolution computation of data in batches or duplicated data is provided, an allocation mechanism for storing data into multiple memories is provided, and a signed padding mechanism is provided. Therefore, a flexible and efficient convolution computation mechanism and structure are provided.

Abstract: A data processing method and circuit based on convolution computation are provided. In the data processing method, a shared memory structure is provided, convolution computation of data in batches or duplicated data is provided, an allocation mechanism for storing data into multiple memories is provided, and a signed padding mechanism is provided. Therefore, a flexible and efficient convolution computation mechanism and structure are provided.

Abstract: A moiré pattern imaging device includes a light-transmissive film and a light-shielding film. The light-transmissive film includes a plurality of imaging units and a light-incident surface and a light-emergent surface opposite to each other. The plurality of imaging units are disposed on the light-incident surface, the light-emergent surface, or a combination thereof and are arranged in two dimensions to form an imaging unit array. The light-shielding film includes a plurality of light-transmissive regions. The light-transmissive regions are arranged in two dimensions to form a light-transmissive array, and the light-shielding film is overlaid on the light-incident surface or the light-emergent surface. The light-transmissive array corresponds to the imaging unit array. The imaging unit array and the light-transmissive array together form a moiré pattern effect to generate an image magnification effect.

Abstract: A holographic image film, and a holographic image recording method and reconstruction method are provided. The holographic image recording method includes a preparation step, an irradiation step and a recording step. The preparation step includes stacking a holographic negative film on a transparent substrate. The irradiation step includes emitting object light and reference light. The reference light is emitted into the transparent substrate and undergoes multiple times of total reflections in a thickness of the transparent substrate to form total internal reflected light. The recording step includes generating a holographic image interference line by a mutual interference between the total internal reflected light and the object light, and recording the holographic image interference line on the holographic negative film in a photosensitive manner.

Abstract: A thin proximity sensing device includes a transparent plate and a light sensor. The transparent plate includes a first surface and a second surface. The first surface is provided with a light source and a light entering area. The light source is arranged on the first surface. The second surface is provided with a reflector. The light sensor includes a light receiving area. The light sensor is arranged on the transparent plate. The reflector is capable of correspondingly reflecting specific incident light. The specific incident light refers to light that enters the transparent plate through the light entering area on the first surface after the light emitted by the light source is reflected externally, and is incident to the reflector. After reflected by the reflector, the specific incident light is reflected one or more times within the thickness of the transparent plate and is transmitted to the light sensor.

Abstract: The present invention discloses a video data display device including a plurality of driving circuit. Each driving circuit includes a status controller, a data receiver, an output data generation unit, and an output buffer. The status controller couples with the data receiver, the output data generation unit, and the output buffer. The status controller generates a status signal based on the operation information of the data receiver, the output data generation unit, or the output buffer. The status controller transmits the status signal to the status controller of other driving circuits.

Abstract: A semiconductor device includes a substrate; a fin structure formed on a substrate; and a gate feature formed over the fin structure, the gate feature comprising a gate dielectric layer, wherein the gate dielectric layer traverses the fin structure to overlay a central portion of the fin structure and opposite side portions of the fin structure that are located in respective undercuts formed in respective portions of a dielectric layer located adjacent to opposite sidewalls of the gate feature, wherein the undercuts extend beyond respective sidewalls of the gate feature and away from the central portion of the fin structure.