Abstract: A light touch apparatus includes a light emitting unit, an imaging unit, an optical signal processing unit, and a position processing unit. The light emitting unit emits a projection light ray. The imaging unit captures an external image, where the external image includes multiple two-dimensional pixels, and corresponding to relative positions of the two-dimensional pixels, the projection light ray of the light emitting unit forms multiple projection spots. The optical signal processing unit receives multiple pieces of reflection light information, and analyzes the pieces of reflection light information to correspondingly generate multiple pieces of analysis spot information, where the pieces of analysis spot information include touch vibration information, and the touch vibration information includes a touch vibration wave whose frequency domain is different from a frequency domain of the projection light ray.

Abstract: A semiconductor device includes a fin structure, disposed on a substrate, that horizontally extends along a direction; and a gate feature comprising a gate dielectric layer and at least a first metal gate layer overlaying the gate dielectric layer, wherein the gate dielectric layer and the first metal gate layer traverse the fin structure to overlay a central portion of the fin structure and further extend along the direction to overlay at least a side portion of the fin structure that is located outside a vertical projection of a sidewall of the gate feature.

Abstract: The present disclosure provides a semiconductor structure includes a semiconductor layer having a surface, and an interlayer dielectric (ILD) defining a metal gate over the surface of the semiconductor layer. The metal gate includes a high-k dielectric layer, a capping layer, and a work function metal layer. A thickness of the capping layer sidewall distal to a corner of the capping layer, is substantially thinner than a thickness which is around center of the capping layer bottom. The present disclosure provides a method for manufacturing a semiconductor structure. The method includes forming a metal gate recess, forming a high-k dielectric layer, forming a first capping layer, forming a second capping layer on the first capping layer, removing or thinning down the first capping layer sidewall, and removing the second capping layer.

Abstract: A method of fabricating a MOSFET with an undoped channel is disclosed. The method comprises fabricating on a substrate a semiconductor structure having a dummy poly gate, dummy interlayer (IL) oxide, and a doped channel. The method further comprises removing the dummy poly gate and the dummy IL oxide to expose the doped channel, removing the doped channel from an area on the substrate, forming an undoped channel for the semiconductor structure at the area on the substrate, and forming a metal gate for the semiconductor structure. Removing the dummy poly gate may comprise dry and wet etch operations. Removing the dummy IL oxide may comprise dry etch operations. Removing the doped channel may comprise anisotropic etch operations on the substrate. Forming an undoped channel may comprise applying an epitaxial process to grow the undoped channel. The method may further comprise growing IL oxide above the undoped channel.

Abstract: A thin plate imaging device in accordance with the present invention comprises a guide light plate, at least an imaging unit, and at least a photosensitive unit; the guide light plate and the imaging unit are utilized to allow lights to conduct total internal reflective or reflective propagation in a dimension, the photosensitive unit is placed in the path of the total internal reflective or reflective propagation and disposed at the image focus position of the imaging unit; clear images can be obtained without moving the imaging unit or the photosensitive unit back and forth, and objects with different object distances can be imaged on different spots of the photosensitive unit such that relative distances of the objects can be determined by image signals obtained via the photosensitive unit directly.

Abstract: A display apparatus for displaying a display information includes a display panel, and a plurality of gate drivers and a plurality of source drivers coupled to the display panel. When one abnormal driver exists among the plurality of gate drivers and the plurality of source drivers, the other functionally operating gate drivers and source drivers transform the display information into a transformed display information to transmit the transformed display information to the display panel for a display operation.

Abstract: An optical touch device using imaging module according the present invention includes a guide light plate, at least a light source, an imaging module, at least a photosensitive unit and a microprocessor; the imaging module has at least an image reflective curved surface to image multiple contact positions to at least a photosensitive unit conveniently to form image information corresponding to the multiple contact positions so as to allow the microprocessor to generate corresponding touch signals; the images at where an object contacts the guide light plate are utilized directly to generate the touch signals instead of detecting attenuation signal of frustrated total internal reflection resulting from the object contacting the guide light plate; due to the light in the guide light plate is employed to conduct the total internal reflection propagation to attain touch control function, components needed in the touch device is reduced and the fabrication cost is saved largely.

Abstract: The present invention provides a guide light plate touch device using imaging unit includes a guide light plate, a light source, an imaging unit, a photosensitive component and a microprocessor. The microprocessor detects the image information output by the photosensitive component, obtains coordinate information of the touch position, and outputs a corresponding control signal according to position information of at least a touch image of the object contacting the operation zone. Hence, the light being utilized to conduct total internal reflection propagation in the guide light plate to perform touch control function leads to much less components being required for the touch device with substantial savings of the fabricating cost.

Abstract: A method of fabricating a MOSFET with an undoped channel is disclosed. The method comprises fabricating on a substrate a semiconductor structure having a dummy poly gate, dummy interlayer (IL) oxide, and a doped channel. The method further comprises removing the dummy poly gate and the dummy IL oxide to expose the doped channel, removing the doped channel from an area on the substrate, forming an undoped channel for the semiconductor structure at the area on the substrate, and forming a metal gate for the semiconductor structure. Removing the dummy poly gate may comprise dry and wet etch operations. Removing the dummy IL oxide may comprise dry etch operations. Removing the doped channel may comprise anisotropic etch operations on the substrate. Forming an undoped channel may comprise applying an epitaxial process to grow the undoped channel. The method may further comprise growing IL oxide above the undoped channel.

Abstract: Some embodiments of the present disclosure provide a semiconductor device including a substrate and a gate structure on the substrate. A first well region of a first conductivity type is in the substrate, close to a first sidewall of the gate structure. A second well region of a second conductivity type is also in the substrate close to the second sidewall of the gate structure. A conductive region is disposed in the second well region. The conductive region can be an epitaxy region. A chemical composition inside the second well region between the conductive region and the gate structure is essentially homogeneous as a chemical composition throughout the second well region.

Abstract: A method of fabricating a MOSFET with an undoped channel is disclosed. The method comprises fabricating on a substrate a semiconductor structure having a dummy poly gate, dummy interlayer (IL) oxide, and a doped channel. The method further comprises removing the dummy poly gate and the dummy IL oxide to expose the doped channel, removing the doped channel from an area on the substrate, forming an undoped channel for the semiconductor structure at the area on the substrate, and forming a metal gate for the semiconductor structure. Removing the dummy poly gate may comprise dry and wet etch operations. Removing the dummy IL oxide may comprise dry etch operations. Removing the doped channel may comprise anisotropic etch operations on the substrate. Forming an undoped channel may comprise applying an epitaxial process to grow the undoped channel. The method may further comprise growing IL oxide above the undoped channel.

Abstract: A holographic image recording method is disclosed, that is realized through utilizing a holographic image fetching and recording device, including the following steps: using an image fetching device to fetch an image of a target object placed on a rotation table rotating at a fixed speed, the image thus obtained is transmitted to a display panel through a connection line; using a light emitting unit to emit coherent light to a first reflector; that reflects the coherent light to light splitter; and the light splitter splits the coherent light along a first light path and a second light path into an object light and a reference light, and transmits them onto a holographic film to interfere with each other, to form a holographic image. A holographic image reconstructing method is also disclosed, to reconstruct and form a 3D holographic image floating above the holographic film.

Abstract: A display apparatus for displaying a display information includes a display panel, and a plurality of gate drivers and a plurality of source drivers coupled to the display panel. When one abnormal driver exists among the plurality of gate drivers and the plurality of source drivers, the other functionally operating gate drivers and source drivers transform the display information into a transformed display information to transmit the transformed display information to the display panel for a display operation.

Abstract: The present disclosure provides a semiconductor structure includes a semiconductor layer having a surface, and an interlayer dielectric (ILD) defining a metal gate over the surface of the semiconductor layer. The metal gate includes a high-k dielectric layer, a capping layer, and a work function metal layer. A thickness of the capping layer sidewall distal to a corner of the capping layer, is substantially thinner than a thickness which is around center of the capping layer bottom. The present disclosure provides a method for manufacturing a semiconductor structure. The method includes forming a metal gate recess, forming a high-k dielectric layer, forming a first capping layer, forming a second capping layer on the first capping layer, removing or thinning down the first capping layer sidewall, and removing the second capping layer.

Abstract: Some embodiments of the present disclosure provide a semiconductor device including a substrate and a gate structure on the substrate. A first well region of a first conductivity type is in the substrate, close to a first sidewall of the gate structure. A second well region of a second conductivity type is also in the substrate close to the second sidewall of the gate structure. A conductive region is disposed in the second well region. The conductive region can be an epitaxy region. A chemical composition inside the second well region between the conductive region and the gate structure is essentially homogeneous as a chemical composition throughout the second well region.

Abstract: A guide light plate optical touch device comprises a guide light plate, an image capturing unit, an optical signal emitting unit, a microprocessor, and an optical signal processing unit; when the guide light plate is touched, at least two lights passing though the touch point carry newly generated low frequency vibration signals or further generate FTIR signals such that the optical signal processing unit obtains at least two unusual signal values; then the microprocessor detects the signal values sequentially output by the optical signal processing unit in a period and obtains the location information of the touch point based on the time points appearing in the period with respect to the two unusual signal values so as to output a corresponding touch signal.

Abstract: A method of fabricating a MOSFET with an undoped channel is disclosed. The method comprises fabricating on a substrate a semiconductor structure having a dummy poly gate, dummy interlayer (IL) oxide, and a doped channel. The method further comprises removing the dummy poly gate and the dummy IL oxide to expose the doped channel, removing the doped channel from an area on the substrate, forming an undoped channel for the semiconductor structure at the area on the substrate, and forming a metal gate for the semiconductor structure. Removing the dummy poly gate may comprise dry and wet etch operations. Removing the dummy IL oxide may comprise dry etch operations. Removing the doped channel may comprise anisotropic etch operations on the substrate. Forming an undoped channel may comprise applying an epitaxial process to grow the undoped channel. The method may further comprise growing IL oxide above the undoped channel.

Abstract: A light vibration touch apparatus comprises a guide light plate, at least a light sensitive unit, at least an optical signal emitting unit, a microprocessor, and an optical signal processor; the optical signal emitting unit emits light signal to propagate in the guide light plate; the stability of the signal influenced with vibration caused by the guide light plate being touched is utilized; the optical signal processor outputs vibration signals corresponding to a touch point; the microprocessor detects the vibration signals sequentially output by the optical signal processor in a period to obtain position information of the touch point in accordance with timings of at least two of the vibration signals appearing in the period and output a corresponding touch signal.

Abstract: A guide light plate touch device with total internal reflective diffraction light comprises a guide light plate, multiple light sensitive units, at least a light source, and a microprocessor; the light sensitive units sense the frustrated total internal reflective diffraction light and output a frustrated total internal reflection signal respectively; the microprocessor confirms at least two of the light sensitive units outputting the frustrated total internal reflection signal, calculates position information of the touch point based on position information of the at least two of the light sensitive lights, and outputs a corresponding touch signal; the light from the respective light sources can be irradiated to the diffraction unit or the guide light plate with a variable projecting angle such that the man hours for adjusting the projecting angle are saved greatly as well as the guide light plate without joining the optical coupler.

Abstract: A structure for guiding light into a light guide plate to conduct total internal reflection comprises a guide light plate and a prism; the prism is integrated with the guide light plate or joined to the guide light plate with an optical adhesive layer; the horizontal surface of the prism is parallel to the upper and lower surfaces of the guide light plate; the maximum angle between the horizontal surface and the slant surface of the prism is only 20 degrees to reduce the thickness of the prism greatly to meet requirements of lightness, thinness, shortness, and smallness for the electronic product; due to a special configuration of the prism and a special arrangement between the guide light plate and the prism, the most part of the light shot to the prism by the light source with any projecting angle is guided into the guide light plate to propagate the total internal reflection such that the light has an intensity capable of being sensed.