Abstract: An antenna structure is provided. The antenna structure includes a conductor substrate, a coupling feed-in element and a shielding element. The conductor substrate has a slot. The coupling feed-in element, partly overlapping the slot, is disposed on the conductor substrate. The shielding element, partly overlapping the slot, is separated from the coupling feed-in element and disposed on the conductor substrate, wherein the shielding element is movable along the slot.

Abstract: A metal oxide thin film transistor (TFT) includes a gate electrode, a gate insulating layer, a metal oxide active layer, a source electrode, and a drain electrode. The gate electrode is formed on a substrate. The gate insulating layer is formed on the substrate and covers the gate electrode. The metal oxide active layer is formed on the gate insulating layer. The drain electrode and the source electrode are formed on two opposite ends of the metal oxide active layer in a spaced-apart manner, in which at least one of the orthographic projection of the source electrode and the orthographic projection of the drain electrode on the substrate does not overlap the gate electrode.

Abstract: A transistor structure disposed on a substrate includes a gate electrode, an organic semiconductor layer, a gate insulation layer and a patterned metal layer. The gate insulation layer is disposed between the gate and the organic semiconductor layer. The patterned metal layer has a conductive oxidation surface and is divided into a source electrode and a drain electrode. A portion of the organic semiconductor layer is exposed between the source electrode and the drain electrode. The conductive oxidation surface directly contacts with the organic semiconductor layer.

Abstract: A thin file transistor includes a gate electrode, a source electrode, a drain electrode, a gate-insulating layer, and an oxide semiconductor layer. The oxide semiconductor layer includes indium-gallium-zinc oxide with a formula of InxGayZnzOw, in which x, y and z satisfy the following formulas 1.5?(y/x)?2 and 1.5?(y/z)?2. The gate-insulating layer is positioned between the gate electrode and the oxide semiconductor layer. The source electrode and the drain electrode are respectively connected to two different sides of the oxide semiconductor layer.

Abstract: A metal oxide thin film transistor (TFT) includes a gate electrode, a gate insulating layer, a metal oxide active layer, a source electrode, and a drain electrode. The gate electrode is formed on a substrate. The gate insulating layer is formed on the substrate and covers the gate electrode. The metal oxide active layer is formed on the gate insulating layer. The drain electrode and the source electrode are formed on two opposite ends of the metal oxide active layer in a spaced-apart manner, in which at least one of the orthographic projection of the source electrode and the orthographic projection of the drain electrode on the substrate does not overlap the gate electrode.

Abstract: An Enterococcus faecium EF08 strain for manufacturing a feed additive is disclosed. The EF08 strain is deposited at Bioresource Collection and Research Center of Taiwan with deposit number BCRC 910525. Also, the EF08 strain is deposited at CGMCC-China General Microbiological Culture Collection with deposit number CGMCC 5549. Moreover, the EF08 strain has a 16S rDNA sequence as set forth as SEQ ID NO: 1.

Abstract: A metal oxide thin film transistor (TFT) includes a gate electrode, a gate insulating layer, a metal oxide active layer, a source electrode, and a drain electrode. The gate electrode is formed on a substrate. The gate insulating layer is formed on the substrate and covers the gate electrode. The metal oxide active layer is formed on the gate insulating layer. The drain electrode and the source electrode are formed on two opposite ends of the metal oxide active layer in a spaced-apart manner, in which at least one of the orthographic projection of the source electrode and the orthographic projection of the drain electrode on the substrate does not overlap the gate electrode.

Abstract: A display system and a data transmission method thereof are provided. When a first frame stored in a frame buffer is identical to a second frame to be output from an audio and video (AV) source, the AV source is set an AV control signal corresponding to a self-refresh mode, and a timing controller reads the first frame to output a display data controlled by the AV control signal. When the first frame is differed from the second frame, the AV source is set the AV control signal corresponding to a data update mode and a AV data signal corresponding to the second frame, and the timing controller stores the second frame in the frame buffer controlled by the AV control signal and outputs the display data corresponding to the first frame or the second frame according the timing sequences of the AV data signal and the display data.

Abstract: Disclosed herein is a thin film transistor. The thin film transistor is characterized in having a source interconnect layer and a drain interconnect layer. The source electrode and the drain electrode are respectively disposed above and in contact with the source interconnect layer and the drain interconnect layer. The semiconductor layer is in contact with both the source interconnect layer and the drain interconnect layer, but is not in contact with the source electrode and the drain electrode.

Abstract: A transistor structure disposed on a substrate includes a gate electrode, an organic semiconductor layer, a gate insulation layer and a patterned metal layer. The gate insulation layer is disposed between the gate and the organic semiconductor layer. The patterned metal layer has a conductive oxidation surface and is divided into a source electrode and a drain electrode. A portion of the organic semiconductor layer is exposed between the source electrode and the drain electrode. The conductive oxidation surface directly contacts with the organic semiconductor layer.

Abstract: An electric apparatus including a display and a process unit is provided. The display has an active area and a peripheral area. The display panel including an active device array substrate, an opposite substrate opposite to the active device array substrate and a display medium between the active device array substrate and the opposite substrate. The active device array substrate has a plurality of active devices disposed in the active area and a humidity sensor disposed in the peripheral area. The humidity sensor is a thin film transistor having a metal oxide semiconductor layer. The process unit is electrically connected to the humidity sensor. The process unit calculates a humidity value according to a sensing current from the humidity sensor.

Abstract: An adaptive tuning method comprises the steps of: obtaining a statistical result; determining whether an adaptive tuning procedure is to be performed in accordance with the statistical result; obtaining reference information of the first wireless module; and performing the adaptive tuning procedure in accordance with the reference information.

Abstract: A thin file transistor includes a gate electrode, a source electrode, a drain electrode, a gate-insulating layer, and an oxide semiconductor layer. The oxide semiconductor layer includes indium-gallium-zinc oxide with a formula of InxGayZnzOw, in which x, y and z satisfy the following formulas 1.5?(y/x)?2 and 1.5?(y/z)?2. The gate-insulating layer is positioned between the gate electrode and the oxide semiconductor layer. The source electrode and the drain electrode are respectively connected to two different sides of the oxide semiconductor.

Abstract: An organic light-emitting display device includes an active array substrate, an encapsulating layer, an organic light-emitting layer, an absorption layer and a sealant. The encapsulating layer is opposite to the active array substrate, and the encapsulating layer has an inner surface facing the active array substrate. The organic light-emitting layer is disposed on the active array substrate. The absorption layer is configured to absorb at least one of moisture and oxygen, and is positioned on the inner surface of the encapsulating layer.

Abstract: The present invention discloses a method for manufacturing home and personal care product and a method for manufacturing degreased coffee particles thereof. The home and personal care product comprises coffee particles with different sizes, in which the coffee particles are degreased by physical and chemical methods and then grinded to different sizes to meet the requirements of different products. Natural compositions from original coffee can be further added for enhancing the clean and care effects of the product.

Abstract: A display system and a data transmission method thereof are provided. When a first frame stored in a frame buffer is identical to a second frame to be output from an audio and video (AV) source, the AV source is set an AV control signal corresponding to a self-refresh mode, and a timing controller reads the first frame to output a display data controlled by the AV control signal. When the first frame is differed from the second frame, the AV source is set the AV control signal corresponding to a data update mode and a AV data signal corresponding to the second frame, and the timing controller stores the second frame in the frame buffer controlled by the AV control signal and outputs the display data corresponding to the first frame or the second frame according the timing sequences of the AV data signal and the display data.

Abstract: A method for performing serial transport communication is provided, where the method is utilized for performing communication between a plurality of devices, each of which provides a user with a plurality of wireless communication functions respectively complying with different wireless communication standards. The method includes: with regard to a first wireless communication function of the plurality of wireless communication functions, utilizing a serial transport protocol to perform communication between the plurality of devices through a transport bus; and with regard to a second wireless communication function of the plurality of wireless communication functions, utilizing the serial transport protocol to perform communication between the plurality of devices through the transport bus. An associated device is also provided.

Abstract: An active device is disposed on a substrate. The active device includes a metal layer, a semiconductor channel layer, an insulating layer, a source and a drain. The metal layer has a metal oxide surface away from the substrate. The insulating layer is disposed between the metal layer and the semiconductor channel layer. The source and the drain are disposed at one side of the semiconductor channel layer. A portion of the semiconductor channel layer is exposed between the source and the drain. An orthogonal projection of the metal layer on the substrate at least covers an orthogonal projection of the portion of the semiconductor channel layer exposed by the source and the drain on the substrate.

Abstract: A method for searching an optimum value of a memory includes the following steps. A first and a second phase delay values of the memory are sequentially set to a plurality of first values and a plurality of second values respectively. amounts of combinations of the first values combining with the second values passing a reading and writing test is recorded. A portion of the first values that the amounts of the corresponding combinations passing the reading and writing test is greater than a threshold is selected. A first value near a median of the selected first values is selected as a first optimum value for setting the first phase delay value. A portion of second values passing the reading and writing test is recorded. A second value near a median of the recording second values is selected as a second optimum value for setting the second phase delay value.

Abstract: An electric apparatus including a display and a process unit is provided. The display has an active area and a peripheral area. The display panel including an active device array substrate, an opposite substrate opposite to the active device array substrate and a display medium between the active device array substrate and the opposite substrate. The active device array substrate has a plurality of active devices disposed in the active area and a humidity sensor disposed in the peripheral area. The humidity sensor is a thin film transistor having a metal oxide semiconductor layer. The process unit is electrically connected to the humidity sensor. The process unit calculates a humidity value according to a sensing current from the humidity sensor.