Patents by Inventor Chih-Hung Pan
Chih-Hung Pan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20240120337Abstract: A semiconductor device structure includes a first dielectric wall, a plurality of first semiconductor layers vertically stacked and extending outwardly from a first side of the first dielectric wall, each first semiconductor layer has a first width, a plurality of second semiconductor layers vertically stacked and extending outwardly from a second side of the first dielectric wall, each second semiconductor layer has a second width, a plurality of third semiconductor layers disposed adjacent the second side of the first dielectric wall, each third semiconductor layer has a third width greater than the second width, a first gate electrode layer surrounding at least three surfaces of each of the first semiconductor layers, the first gate electrode layer having a first conductivity type, and a second gate electrode layer surrounding at least three surfaces of each of the second semiconductor layers, the second gate electrode layer having a second conductivity type opposite the first conductivity type.Type: ApplicationFiled: January 15, 2023Publication date: April 11, 2024Inventors: Ta-Chun LIN, Chih-Hung HSIEH, Chun-Sheng LIANG, Wen-Chiang HONG, Chun-Wing YEUNG, Kuo-Hua PAN, Chih-Hao CHANG, Jhon Jhy LIAW
-
Patent number: 11950016Abstract: The present invention provides a control method of a receiver. The control method includes the steps of: when the receiver enters a sleep/standby mode, continually detecting an auxiliary signal from an auxiliary channel to generate a detection result; and if the detection result indicates that the auxiliary signal has a preamble or a specific pattern, generating a wake-up control signal to wake up the receiver before successfully receiving the auxiliary signal having a wake-up command.Type: GrantFiled: April 15, 2020Date of Patent: April 2, 2024Assignee: MEDIATEK INC.Inventors: Chun-Chia Chen, Chih-Hung Pan, Chia-Chi Liu, Shun-Fang Liu, Meng-Kun Li, Chao-An Chen
-
Publication number: 20230329128Abstract: A memory device includes a bottom electrode, a buffer element, a metal-containing oxide portion, a resistance switch element, and a top electrode. The buffer element is over the bottom electrode. The metal-containing oxide portion is over the buffer element, in which the metal-containing oxide portion has a same metal material as that of the buffer element. The resistance switch element is over the metal-containing oxide portion. The top electrode is over the resistance switch element.Type: ApplicationFiled: June 12, 2023Publication date: October 12, 2023Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Hsia-Wei CHEN, Chih-Hung PAN, Chih-Hsiang CHANG, Yu-Wen LIAO, Wen-Ting CHU
-
Patent number: 11723294Abstract: A method for fabricating a memory device is provided. The method includes forming a bottom electrode layer over a substrate; forming a buffer layer over the bottom electrode layer; performing a surface treatment to a top surface of the buffer layer; depositing a resistance switch layer over the top surface of the buffer layer after performing the surface treatment; forming a top electrode over the resistance switch layer; and patterning the resistance switch layer into a resistance switch element below the top electrode.Type: GrantFiled: June 25, 2020Date of Patent: August 8, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Hsia-Wei Chen, Chih-Hung Pan, Chih-Hsiang Chang, Yu-Wen Liao, Wen-Ting Chu
-
Publication number: 20210408373Abstract: A method for fabricating a memory device is provided. The method includes forming a bottom electrode layer over a substrate; forming a buffer layer over the bottom electrode layer; performing a surface treatment to a top surface of the buffer layer; depositing a resistance switch layer over the top surface of the buffer layer after performing the surface treatment; forming a top electrode over the resistance switch layer; and patterning the resistance switch layer into a resistance switch element below the top electrode.Type: ApplicationFiled: June 25, 2020Publication date: December 30, 2021Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Hsia-Wei CHEN, Chih-Hung PAN, Chih-Hsiang CHANG, Yu-Wen LIAO, Wen-Ting CHU
-
Patent number: 11191873Abstract: A method for processing a biomedical material using a supercritical fluid includes introducing the supercritical fluid into a cavity. The supercritical fluid is doped with a hydrogen isotope-labeled compound, an organic metal compound, an element selecting from a halogen element, oxygen, sulfur, selenium, phosphorus or arsenic, or a compound containing the element. The biomedical material in the cavity is modified by the supercritical fluid at a temperature above a critical temperature of the supercritical fluid and a pressure above a critical pressure of the supercritical fluid.Type: GrantFiled: November 21, 2017Date of Patent: December 7, 2021Assignee: NATIONAL SUN YAT-SEN UNIVERSITYInventors: Ting-Chang Chang, Kuan-Chang Chang, Chih-Cheng Shih, Chih-Hung Pan, Chih-Yang Lin
-
Publication number: 20210329191Abstract: The present invention provides a control method of a receiver. The control method includes the steps of: when the receiver enters a sleep/standby mode, continually detecting an auxiliary signal from an auxiliary channel to generate a detection result; and if the detection result indicates that the auxiliary signal has a preamble or a specific pattern, generating a wake-up control signal to wake up the receiver before successfully receiving the auxiliary signal having a wake-up command.Type: ApplicationFiled: April 15, 2020Publication date: October 21, 2021Inventors: Chun-Chia Chen, Chih-Hung Pan, Chia-Chi Liu, Shun-Fang Liu, Meng-Kun Li, Chao-An Chen
-
Patent number: 11101141Abstract: A method for reducing defects of an electronic component using a supercritical fluid includes recrystallizing and rearranging grains in the electronic component by introducing the supercritical fluid doped with H2S together with an electromagnetic wave into a cavity. The cavity has a temperature above a critical temperature of the supercritical fluid and a pressure above a critical pressure of the supercritical fluid.Type: GrantFiled: July 15, 2019Date of Patent: August 24, 2021Assignee: NATIONAL SUN YAT-SEN UNIVERSITY KZInventors: Ting-Chang Chang, Kuan-Chang Chang, Chih-Cheng Shih, Chih-Hung Pan
-
Publication number: 20190341267Abstract: A method for reducing defects of an electronic component using a supercritical fluid includes recrystallizing and rearranging grains in the electronic component by introducing the supercritical fluid doped with H2S together with an electromagnetic wave into a cavity. The cavity has a temperature above a critical temperature of the supercritical fluid and a pressure above a critical pressure of the supercritical fluid.Type: ApplicationFiled: July 15, 2019Publication date: November 7, 2019Inventors: Ting-Chang Chang, Kuan-Chang Chang, Chih-Cheng Shih, Chih-Hung Pan
-
Patent number: 10461252Abstract: A resistive random access memory overcomes the low durability of the conventional resistive random access memory. The resistive random access memory includes a first electrode, a second electrode, an enclosing layer and an oxygen-containing resistance changing layer. The first and second electrodes are separate from each other. The enclosing layer forms a first via-hole. The oxygen-containing resistance changing layer is arranged for the first via-hole. The first and second electrodes and the enclosing layer jointly enclose the oxygen-containing resistance changing layer. Each of the first electrode, the second electrode and the enclosing layer is made of an element not containing oxygen.Type: GrantFiled: July 19, 2016Date of Patent: October 29, 2019Assignee: National Sun Yat-Sen UniversityInventors: Ting-Chang Chang, Kuan-Chang Chang, Tsung-Ming Tsai, Chih-Cheng Shih, Chih-Hung Pan
-
Publication number: 20180195200Abstract: A method for processing an electronic component using a supercritical fluid includes introducing the supercritical fluid into a cavity. The supercritical fluid is doped with a hydrogen isotope-labeled compound, an organic metal compound, an element selecting from a halogen element, oxygen, sulfur, selenium, phosphorus or arsenic, or a compound containing the element. An electronic component in the cavity is modified by the supercritical fluid at a temperature above a critical temperature of the supercritical fluid and a pressure above a critical pressure of the supercritical fluid.Type: ApplicationFiled: September 22, 2017Publication date: July 12, 2018Inventors: TING-CHANG CHANG, KUAN-CHANG CHANG, CHIH-CHENG SHIH, CHIH-HUNG PAN
-
Publication number: 20180193525Abstract: A method for processing a biomedical material using a supercritical fluid includes introducing the supercritical fluid into a cavity. The supercritical fluid is doped with a hydrogen isotope-labeled compound, an organic metal compound, an element selecting from a halogen element, oxygen, sulfur, selenium, phosphorus or arsenic, or a compound containing the element. The biomedical material in the cavity is modified by the supercritical fluid at a temperature above a critical temperature of the supercritical fluid and a pressure above a critical pressure of the supercritical fluid.Type: ApplicationFiled: November 21, 2017Publication date: July 12, 2018Inventors: Ting-Chang Chang, Kuan-Chang Chang, Chih-Cheng Shih, Chih-Hung Pan, Chih-Yang Lin
-
Patent number: 9935265Abstract: A resistive random access memory overcomes the low reliability of the conventional resistive random access memory. The resistive random access memory includes a resistance changing layer and two electrode layers. The two electrode layers are coupled with the resistance changing layer. Each of the two electrode layers includes a doping area containing a heavy element. In such an arrangement, the above deficiency can be overcome.Type: GrantFiled: October 12, 2016Date of Patent: April 3, 2018Assignee: National Sun Yat-Sen UniversityInventors: Ting-Chang Chang, Kuan-Chang Chang, Tsung-Ming Tsai, Chih-Hung Pan, Po-Hsun Chen
-
Patent number: 9853214Abstract: A resistive random access memory includes a first electrode, a separating medium, a resistance changing layer and a second electrode. The first electrode has a mounting face. The separating medium has a first face in contact with the mounting face, a second face opposite to the first face, and an inner face extending between the first and second faces. The separating medium forms a through hole extending from the first to second face. A part of the mounting face is not covered by the separating medium. The separating medium has a first dielectric. The resistance changing layer extends along the part of the mounting face as well as the inner and second faces. The resistance changing layer has a second dielectric having a dielectric constant larger than a dielectric constant of the first dielectric by 2 or less. The second electrode is arranged on the resistance changing layer.Type: GrantFiled: December 29, 2016Date of Patent: December 26, 2017Assignee: National Sun Yat-Sen UniversityInventors: Ting-Chang Chang, Kuan-Chang Chang, Tsung-Ming Tsai, Tian-Jian Chu, Chih-Hung Pan
-
Publication number: 20170346004Abstract: A resistive random access memory overcomes the low reliability of the conventional resistive random access memory. The resistive random access memory includes a resistance changing layer and two electrode layers. The two electrode layers are coupled with the resistance changing layer. Each of the two electrode layers includes a doping area containing a heavy element. In such an arrangement, the above deficiency can be overcome.Type: ApplicationFiled: October 12, 2016Publication date: November 30, 2017Inventors: Ting-Chang Chang, Kuan-Chang Chang, Tsung-Ming Tsai, Chih-Hung Pan, Po-Hsun Chen
-
Publication number: 20170341050Abstract: The present disclosure provides a reaction method with homogeneous-phase supercritical fluid, including: preparing a supercritical fluid and a solute; supplying the supercritical fluid and the solute into a molecular sieve component to uniformly mix the supercritical fluid and the solute in the molecular sieve component, forming a homogeneous-phase supercritical fluid; and supplying the homogeneous-phase supercritical fluid into a reaction chamber for conducting a reaction.Type: ApplicationFiled: October 12, 2016Publication date: November 30, 2017Inventors: Ting-Chang Chang, Kuan-Chang Chang, Tsung-Ming Tsai, Chih-Cheng Shih, Chih-Hung Pan
-
Publication number: 20170317281Abstract: A resistive random access memory overcomes the low durability of the conventional resistive random access memory. The resistive random access memory includes a first electrode, a second electrode, an enclosing layer and an oxygen-containing resistance changing layer. The first and second electrodes are separate from each other. The enclosing layer forms a first via-hole. The oxygen-containing resistance changing layer is arranged for the first via-hole. The first and second electrodes and the enclosing layer jointly enclose the oxygen-containing resistance changing layer. Each of the first electrode, the second electrode and the enclosing layer is made of an element not containing oxygen.Type: ApplicationFiled: July 19, 2016Publication date: November 2, 2017Inventors: Ting-Chang Chang, Kuan-Chang Chang, Tsung-Ming Tsai, Chih-Cheng Shih, Chih-Hung Pan
-
Publication number: 20170222143Abstract: A resistive random access memory is provided to solve the problem of low switching speed of the conventional resistive random access memory. The resistive random access memory may include a thermally conductive layer, a first electrode layer, a heat preserving element, a resistance changing layer and a second electrode layer. The first electrode layer is arranged on the thermally conductive layer. The heat preserving element is arranged on the first electrode layer and forms a through-hole. A part of a surface of the first electrode layer is exposed to the through-hole. The resistance changing layer extends from the part of the surface of the first electrode layer to a surface of the heat preserving element that is located outside the through-hole. The second electrode layer is arranged on the resistance changing layer.Type: ApplicationFiled: May 17, 2016Publication date: August 3, 2017Inventors: Ting-Chang Chang, Kuan-Chang Chang, Tsung-Ming Tsai, Tian-Jian Chu, Chih-Hung Pan
-
Patent number: 9711720Abstract: A resistive random access memory including a first electrode, a separating medium, a resistance changing layer and a second electrode is disclosed. The first electrode has a mounting face. The separating medium is arranged on the first electrode and forms a through hole. A part of the first electrode is not covered by the separating medium. The separating medium has a first dielectric. The resistance changing layer extends along the part of the first electrode as well as along an inner face and the second face of the separating medium. The resistance changing layer has a second dielectric having a dielectric constant larger than a dielectric constant of the first dielectric by 2 or less. The second electrode is arranged on the resistance changing layer. In this arrangement, the problem of unstable forming voltage of the conventional resistive random access memory can be solved.Type: GrantFiled: June 9, 2015Date of Patent: July 18, 2017Assignee: National Sun Yat-Sen UniversityInventors: Ting-Chang Chang, Kuan-Chang Chang, Tsung-Ming Tsai, Tian-Jian Chu, Chih-Hung Pan
-
Patent number: 9685610Abstract: A method for producing a resistive random access memory includes preparing a first metal layer and sputtering a resistive switching layer on the first metal layer. Surface treatment is conducted on the resistive switching layer by using a plasma containing mobile ions to dope the mobile ions into the resistive switching layer. The polarity of the mobile ions is opposite to the polarity of oxygen ions. Then, a second metal layer is sputtered on the resistive switching layer.Type: GrantFiled: October 7, 2016Date of Patent: June 20, 2017Assignee: NATIONAL SUN YAT-SEN UNIVERSITYInventors: Ting-Chang Chang, Kuan-Chang Chang, Tsung-Ming Tsai, Tian-Jian Chu, Chih-Hung Pan