Abstract: An integrated circuit includes a first semiconductor wafer, a second semiconductor wafer, a first interconnect structure, a first through substrate via, and an under bump metallurgy (UBM) layer. The first semiconductor wafer has a first side of the first semiconductor wafer. The second semiconductor wafer is coupled to the first semiconductor wafer, and is over the first semiconductor wafer. The second semiconductor wafer has a first device in a first side of the second semiconductor wafer. The first interconnect structure is on a second side of the first semiconductor wafer opposite from the first side of the first semiconductor wafer. The first interconnect structure includes an inductor below the first semiconductor wafer. The first through substrate via extends through the first semiconductor wafer. The first through substrate via electrically couples the inductor to at least the first device. The UBM layer is on a surface of the first interconnect structure.

Abstract: The present disclosure provides a voltage monitor and a semiconductor device including the voltage monitor. The voltage monitor includes a first voltage-to-digital converter (VDC), a second VDC, a first digital-to-binary converter (DBC), a second DBC, and an adder. The first VDC is configured to generate a first digital signal in response to a clock signal, and the second VDC is configured to generate a second digital signal in response to the clock signal. The first DBC is connected to the first VDC, and configured to convert the first digital signal to a first binary signal. The second DBC is connected to the second VDC, and configured to convert the second digital signal to a second binary signal. The adder is connected to the first DBC and the second DBC, and configured to combine the first binary signal and the second binary signal into an output signal.

Abstract: An integrated circuit includes a first semiconductor wafer, a second semiconductor wafer, a first interconnect structure, a first through substrate via, and an under bump metallurgy (UBM) layer. The first semiconductor wafer has a first side of the first semiconductor wafer. The second semiconductor wafer is coupled to the first semiconductor wafer, and is over the first semiconductor wafer. The second semiconductor wafer has a first device in a first side of the second semiconductor wafer. The first interconnect structure is on a second side of the first semiconductor wafer opposite from the first side of the first semiconductor wafer. The first interconnect structure includes an inductor below the first semiconductor wafer. The first through substrate via extends through the first semiconductor wafer. The first through substrate via electrically couples the inductor to at least the first device. The UBM layer is on a surface of the first interconnect structure.

Abstract: An integrated circuit includes a first semiconductor wafer, a second semiconductor wafer, a first interconnect structure, an inductor, and a through substrate via. The first semiconductor wafer has a first device in a first side of the first semiconductor wafer. The second semiconductor wafer is over the first semiconductor wafer. The first interconnect structure is on a second side of the first semiconductor wafer opposite from the first side of the first semiconductor wafer. The inductor is below the first semiconductor wafer, and at least a portion of the inductor is within the first interconnect structure. The through substrate via extends through the first semiconductor wafer. The inductor is coupled to at least the first device by at least the through substrate via.

Abstract: A method of forming a package structure includes: forming an inductor comprising a through-via over a carrier; placing a semiconductor device over the carrier; molding the semiconductor device and the through-via in a molding material; and forming a first redistribution layer on the molding material, wherein the inductor and the semiconductor device are electrically connected by the first redistribution layer.

Abstract: An integrated circuit includes a first semiconductor wafer, a second semiconductor wafer, a first interconnect structure, an inductor, and a through substrate via. The first semiconductor wafer has a first device in a first side of the first semiconductor wafer. The second semiconductor wafer is over the first semiconductor wafer. The first interconnect structure is on a second side of the first semiconductor wafer opposite from the first side of the first semiconductor wafer. The inductor is below the first semiconductor wafer, and at least a portion of the inductor is within the first interconnect structure. The through substrate via extends through the first semiconductor wafer. The inductor is coupled to at least the first device by at least the through substrate via.

Abstract: A method of transferring heat in a package includes conducting heat from a first device to a second device by a low thermal resistance substrate path in a chip layer of the package, conducting heat from an integrated circuit (IC) to a first package layer of the package, conducting heat from the first package layer of the package to at least a first set of through-vias positioned in the chip layer, and conducting heat from the first set of through-vias to a surface of a second package layer opposite the chip layer. The first device and the second device is part of the IC chip. The first package layer is adjacent to the chip layer.

Abstract: An integrated circuit includes a first and second semiconductor wafer, a bonding layer, a first and second interconnect structure, an inductor, and a through substrate via. The first semiconductor wafer has a first device in a first side of the first semiconductor wafer. The second semiconductor wafer is over the first semiconductor wafer. The bonding layer is between the first and the second semiconductor wafer. The first interconnect structure is on a second side of the first semiconductor wafer. The inductor is below the first semiconductor wafer. At least a portion of the inductor is within the first interconnect structure. The second interconnect structure is on the first side of the first semiconductor wafer. The through substrate via extends through the first semiconductor wafer. The inductor is coupled to at least the first device by the second interconnect structure and the through substrate via.

Abstract: A method of forming a package structure includes: forming an inductor comprising a through-via over a carrier; placing a semiconductor device over the carrier; molding the semiconductor device and the through-via in a molding material; and forming a first redistribution layer on the molding material, wherein the inductor and the semiconductor device are electrically connected by the first redistribution layer.

Abstract: A package structure includes a first redistribution layer, a molding material, a semiconductor device and an inductor. The molding material is located on the first redistribution layer. The semiconductor device is molded in the molding material. The inductor penetrates through the molding material and electrically connected to the semiconductor device.

Abstract: A method of transferring heat in a package includes conducting heat from a first device to a second device by a low thermal resistance substrate path in a chip layer of the package, conducting heat from an integrated circuit (IC) to a first package layer of the package, conducting heat from the first package layer of the package to at least a first set of through-vias positioned in the chip layer, and conducting heat from the first set of through-vias to a surface of a second package layer opposite the chip layer. The first device and the second device is part of the IC chip. The first package layer is adjacent to the chip layer.

Abstract: An integrated circuit includes a first and second semiconductor wafer, a bonding layer, a first and second interconnect structure, an inductor, and a through substrate via. The first semiconductor wafer has a first device in a first side of the first semiconductor wafer. The second semiconductor wafer is over the first semiconductor wafer. The bonding layer is between the first and the second semiconductor wafer. The first interconnect structure is on a second side of the first semiconductor wafer. The inductor is below the first semiconductor wafer. At least a portion of the inductor is within the first interconnect structure. The second interconnect structure is on the first side of the first semiconductor wafer. The through substrate via extends through the first semiconductor wafer. The inductor is coupled to at least the first device by the second interconnect structure and the through substrate via.

Abstract: An integrated circuit (IC) package structure includes an electrical signal path, a low thermal resistance path and a substrate that includes a first device and a second device. The first device and the second device are part of an IC chip. The electrical signal path is from the first device to a top surface of the IC chip. The low thermal resistance path extends from the second device to the top surface of the IC chip. The low thermal resistance path is electrically isolated from the electrical signal path. The second device is thermally coupled to the first device by a low thermal resistance substrate path.

Abstract: An integrated circuit includes a first semiconductor wafer, a second semiconductor wafer, a first interconnect structure, an inductor, a second interconnect structure and a through substrate via. The first semiconductor wafer has a first device in a front side of the first semiconductor wafer. The second semiconductor wafer is bonded to the first semiconductor wafer. The first interconnect structure is below a backside of the first semiconductor wafer. The inductor is below the first semiconductor wafer, and at least a portion of the inductor is within the first interconnect structure. The second interconnect structure is on the front side of the first semiconductor wafer. The through substrate via extends through the first semiconductor wafer. The inductor is coupled to at least the first device by the second interconnect structure and the through substrate via.

Abstract: An integrated circuit includes a first semiconductor wafer, a second semiconductor wafer, a first interconnect structure, an inductor, a second interconnect structure and a through substrate via. The first semiconductor wafer has a first device in a front side of the first semiconductor wafer. The second semiconductor wafer is bonded to the first semiconductor wafer. The first interconnect structure is below a backside of the first semiconductor wafer. The inductor is below the first semiconductor wafer, and at least a portion of the inductor is within the first interconnect structure. The second interconnect structure is on the front side of the first semiconductor wafer. The through substrate via extends through the first semiconductor wafer. The inductor is coupled to at least the first device by the second interconnect structure and the through substrate via.

Abstract: An integrated circuit (IC) package structure includes an electrical signal path, a low thermal resistance path and a substrate that includes a first device and a second device. The first device and the second device are part of an IC chip. The electrical signal path is from the first device to a top surface of the IC chip. The low thermal resistance path extends from the second device to the top surface of the IC chip. The low thermal resistance path is electrically isolated from the electrical signal path. The second device is thermally coupled to the first device by a low thermal resistance substrate path.

Abstract: A package structure includes a first package layer, a second package layer, and a chip layer positioned between the first package layer and the second package layer. The first package layer includes an electrical signal structure electrically isolated from a first thermal conduction structure. The chip layer includes an integrated circuit (IC) chip electrically connected to the electrical signal structure, a molding material, and a through-via positioned in the molding material. The first thermal conduction structure, the through-via, and the second thermal conduction structure are configured as a low thermal resistance path from the IC chip to a surface of the second package layer opposite the chip layer.

Abstract: A box-type laser processing machine capable of vacuum dedusting includes a chassis; a laser processing area is provided inside the chassis for processing work of a laser output apparatus, and the box-type laser processing machine capable of vacuum dedusting is characterized in that: a plurality of air inlet holes is provided above the laser processing area in the periphery of the chassis, and an air exhaust hole is provided opposite to the laser processing area on the chassis; in this way, when air extraction is performed in the laser processing area inside the chassis by using an air extraction device, air outside the chassis may be guided into the chassis via the plurality of air inlet holes to extract dust generated by processing work out of the chassis via the air exhaust hole.

Abstract: A package structure includes a first package layer, a second package layer, and a chip layer positioned between the first package layer and the second package layer. The first package layer includes an electrical signal structure electrically isolated from a first thermal conduction structure. The chip layer includes an integrated circuit (IC) chip electrically connected to the electrical signal structure, a molding material, and a through-via positioned in the molding material. The first thermal conduction structure, the through-via, and the second thermal conduction structure are configured as a low thermal resistance path from the IC chip to a surface of the second package layer opposite the chip layer.

Abstract: A package structure includes a first redistribution layer, a molding material, a semiconductor device and an inductor. The molding material is located on the first redistribution layer. The semiconductor device is molded in the molding material. The inductor penetrates through the molding material and electrically connected to the semiconductor device.