Abstract: A semiconductor processing device includes a first etching chamber, a second etching chamber, and an etching module. The etching module is adapted to interchangeably contain the first etching chamber or the second etching chamber for wafer etching. A semiconductor process using the semiconductor processing device is also provided.

Abstract: An optical sensor assembly is provided. The optical sensor assembly includes a circuit board, an optical sensor positioned on the circuit board, and a front cover attached to the circuit board and covering the optical sensor. The front cover includes an optical element configured to guide or condense an incident light of a predetermined wavelength onto the optical sensor. The front cover is made of polypropylene or polyethylene. The predetermined wavelength is in a range from 8 micrometers to 12 micrometers.

Abstract: There is provided a smoke detector including a light source, a reflective surface, a light sensor and a processor. The light sensor receives reflected light when the light source emits light toward the reflective surface, and generates a reference detection signal when there is no smoke. The processor receives the detection signal from the light sensor, and automatically selects a set of predetermined condition thresholds according to a profile of the detection signal to be compared with the detection signal thereby determining whether to generate an alarm according to the comparison result.

Abstract: There is provided an auto detection system including a thermal detection device and a host. The host controls an indication device to indicate a prompt message or detection results according to a slope variation of voltage values or 2D distribution of temperature values detected by the thermal detection device, wherein the voltage values include the detected voltage of a single pixel or the sum of detected voltages of multiple pixels of a thermal sensor.

Abstract: A wearable device includes a case and a far infrared temperature sensing device. The case has a first opening. The far infrared temperature sensing device is disposed inside the case of the wearable device. The far infrared temperature sensing device includes an assembly structure, a sensor chip, a filter structure, and a metal shielding structure. The assembly structure has an accommodating space and a top opening. The sensor chip is disposed in the accommodating space of the assembly structure. The filter structure is disposed above the sensor chip. The metal shielding structure is disposed above the sensor chip, and has a second opening to expose the filter structure. The first and second openings are communicated to cooperatively define a through hole.

Abstract: There is provided a temperature measurement system including an image sensor, a thermal sensor and a processor. The image sensor captures an image frame. The thermal sensor captures a thermal image. The processor calibrates measured temperatures of the thermal sensor and calibrates offset pixels between the image frame and the thermal image corresponding to different operating distances.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a first metal gate stack and a second metal gate stack over the semiconductor substrate. The first metal gate stack and the second metal gate stack are electrically isolated from each other, and the first metal gate stack has a curved edge facing the second metal gate stack. The semiconductor device structure also includes a dielectric layer surrounding the first metal gate stack and the second metal gate stack.

Abstract: There is provided an auto detection system including a thermal detection device and a host. The host controls an indication device to indicate a prompt message or detection results according to a slope variation of voltage values or 2D distribution of temperature values detected by the thermal detection device, wherein the voltage values include the detected voltage of a single pixel or the sum of detected voltages of multiple pixels of a thermal sensor.

Abstract: An optical sensor assembly is provided. The optical sensor assembly includes a circuit board, an optical sensor positioned on the circuit board, and a front cover attached to the circuit board and covering the optical sensor. The front cover includes an optical element configured to guide or condense an incident light of a predetermined wavelength onto the optical sensor. The front cover is made of polypropylene or polyethylene. The predetermined wavelength is in a range from 8 micrometers to 12 micrometers.

Abstract: A wearable device includes a case and a far infrared temperature sensing device. The case has a first opening. The far infrared temperature sensing device is disposed inside the case of the wearable device. The far infrared temperature sensing device includes an assembly structure, a sensor chip, a filter structure, and a metal shielding structure. The assembly structure has an accommodating space and a top opening. The sensor chip is disposed in the accommodating space of the assembly structure. The filter structure is disposed above the sensor chip. The metal shielding structure is disposed above the sensor chip, and has a second opening to expose the filter structure. The first and second openings are communicated to cooperatively define a through hole.

Abstract: There is provided a forehead temperature measurement system including an image sensor, a thermal sensor and a processor. The image sensor is used to output an image frame. The thermal sensor is used to output a thermal image. The processor is used to determine a forehead region in the image frame, map the forehead region to the thermal image and identify a forehead temperature according to a forehead mapped region in the thermal image. The processor further calibrates or compensates the forehead temperature according to an area. of the forehead region.

Abstract: Gate cutting techniques for integrated circuit devices, particularly for fin-like field effect transistor devices, are disclosed herein. An exemplary method includes receiving an integrated circuit device that includes a gate structure and performing a gate cut process to separate the gate structure into a first gate structure and a second gate structure. The gate cut process includes selectively removing a portion of the gate structure, such that a residual gate dielectric layer extends between the first gate structure and the second gate structure. In some implementations, the residual gate dielectric includes a high-k dielectric material. The method further includes forming a gate isolation region between the first gate structure and the second gate structure.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a first metal gate stack and a second metal gate stack over a semiconductor substrate. The semiconductor device structure also includes a dielectric layer surrounding the first metal gate stack and the second metal gate stack. The semiconductor device structure further includes an insulating structure between the first metal gate stack and the second metal gate stack. The insulating structure has a first convex surface facing towards the first metal gate stack.

Abstract: Gate cutting techniques for integrated circuit devices, particularly for fin-like field effect transistor devices, are disclosed herein. An exemplary method includes receiving an integrated circuit device that includes a gate structure and performing a gate cut process to separate the gate structure into a first gate structure and a second gate structure. The gate cut process includes selectively removing a portion of the gate structure, such that a residual gate dielectric layer extends between the first gate structure and the second gate structure. In some implementations, the residual gate dielectric includes a high-k dielectric material. The method further includes forming a gate isolation region between the first gate structure and the second gate structure.

Abstract: Gate cutting techniques for integrated circuit devices, particularly for fin-like field effect transistor devices, are disclosed herein. An exemplary method includes receiving an integrated circuit device that includes a gate structure and performing a gate cut process to separate the gate structure into a first gate structure and a second gate structure. The gate cut process includes selectively removing a portion of the gate structure, such that a residual gate dielectric layer extends between the first gate structure and the second gate structure. In some implementations, the residual gate dielectric includes a high-k dielectric material. The method further includes forming a gate isolation region between the first gate structure and the second gate structure.

Abstract: An optical medical detection device includes a first physiological sensor and a processor. The first physiological sensor is adapted to continuously output a first photoplethysmography (PPG) signal generated by a first skin area of an object, and further to optionally and continuously output a second photoplethysmography (PPG) signal generated by a second skin area of the object. The second skin area is different from the first skin area. The processor is electrically connected to the first physiological sensor. The processor is adapted to convert the first PPG signal and the second PPG signal into a physiological feature, and the physiological feature is at least one of a blood pressure ratio and a blood flow velocity.

Abstract: There is provided a force sensor including a substrate and a polymer material layer. The substrate has a circuit layout that includes a first electrode and a second electrode configured to form a capacitor therebetween. The polymer material layer covers at least on a space between the first electrode and the second electrode, and is used to change capacitance of the capacitor while being pressed. The force sensor is arranged inside a stem of an earphone for detecting the user input.

Abstract: A sprayer includes: a container arranged to contain liquid; a passage including a transparent window, a first opening, a second opening and a resonator, wherein when the liquid in the container is passed through the resonator via the first opening, the liquid is emitted as a gas via the second opening; and a detection unit disposed outside of the passage. The detection unit includes: a light source disposed to emit light through the light transparent window for illuminating the gas in the passage such that the gas will reflect the emitted light; an optical sensor disposed to detect a parameter of the reflected light through the transparent window; and a processor coupled to the optical sensor for stopping the resonator from generating the gas when the parameter of the reflected light is below a first threshold corresponding to a specific level of liquid within the container.

Abstract: A far infrared sensor package includes a package body and a plurality of far infrared sensor array integrated circuits. The plurality of far infrared sensor array integrated circuits are disposed on a same plane and inside the package body. Each of the far infrared sensor array integrated circuits includes a far infrared sensing element array of a same size.

Abstract: An electronic device includes an outer case, a circuit substrate, a thermopile sensor chip, a filter structure, and a waterproof structure. The outer case has an opening. The circuit substrate is disposed inside the outer case. The thermopile sensor chip is disposed on the circuit substrate. The filter structure is disposed above the thermopile sensor chip. The waterproof structure is surroundingly connected between the filter structure and the outer case, wherein the waterproof structure has a through hole for exposing the filter structure and communicated with the opening of the outer case.