Patents by Inventor Chih-Pin TSAO

Chih-Pin TSAO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200411672
    Abstract: A finFET device and methods of forming a finFET device are provided. The method includes depositing a dummy gate over and along sidewalls of a fin extending upwards from a semiconductor substrate, forming a first gate spacer along a sidewall of the dummy gate, and plasma-doping the first gate spacer with carbon to form a carbon-doped gate spacer. The method further includes forming a source/drain region adjacent a channel region of the fin and diffusing carbon from the carbon-doped gate spacer into a first region of the fin to provide a first carbon-doped region. The first carbon-doped region is disposed between at least a portion of the source/drain region and the channel region of the fin.
    Type: Application
    Filed: September 6, 2020
    Publication date: December 31, 2020
    Inventors: Yu-Chang Lin, Chun-Feng Nieh, Huicheng Chang, Wei-Ting Chien, Chih-Pin Tsao, Hou-Ju Li, Tien-Shun Chang
  • Patent number: 10861975
    Abstract: A method of forming a FinFET with a rounded source/drain profile comprises forming a fin in a substrate, etching a source/drain recess in the fin, forming a plurality of source/drain layers in the source/drain recess; and etching at least one of the plurality of source/drain layers. The source/drain layers may be a silicon germanium compound. Etching at the source/drain layers may comprises partially etching each of the plurality of source/drain layers prior to forming subsequent layers of the plurality of source/drain layers. The source/drain layers may be formed with a thickness at a top corner of about 15 nm, and the source/drain layers may each be etched back by about 3 nm prior to forming subsequent layers of the plurality of source/drain layers. Forming the plurality of source/drain layers optionally comprises forming at least five source/drain layers.
    Type: Grant
    Filed: August 19, 2019
    Date of Patent: December 8, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ming-Hua Yu, Chih-Pin Tsao, Pei-Ren Jeng, Tze-Liang Lee
  • Publication number: 20200350416
    Abstract: A semiconductor device includes a source/drain region, a source/drain silicide layer formed on the source/drain region, and a first contact disposed over the source/drain silicide layer. The first contact includes a first metal layer, an upper surface of the first metal layer is at least covered by a silicide layer, and the silicide layer includes a same metal element as the first metal layer.
    Type: Application
    Filed: July 13, 2020
    Publication date: November 5, 2020
    Inventors: Chia-Ming HSU, Pei-Yu CHOU, Chih-Pin TSAO, Kuang-Yuan HSU, Jyh-Huei CHEN
  • Patent number: 10797164
    Abstract: A FinFET and methods for forming a FinFET are disclosed. A method includes forming a semiconductor fin on a substrate, implanting the semiconductor fin with dopants, and forming a capping layer on a top surface and sidewalls of the semiconductor fin. The method further includes forming a dielectric on the capping layer, and forming a gate electrode on the dielectric.
    Type: Grant
    Filed: December 2, 2016
    Date of Patent: October 6, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ming-Hua Yu, Chih-Pin Tsao, Hou-Yu Chen
  • Patent number: 10770570
    Abstract: A finFET device and methods of forming a finFET device are provided. The method includes depositing a dummy gate over and along sidewalls of a fin extending upwards from a semiconductor substrate, forming a first gate spacer along a sidewall of the dummy gate, and plasma-doping the first gate spacer with carbon to form a carbon-doped gate spacer. The method further includes forming a source/drain region adjacent a channel region of the fin and diffusing carbon from the carbon-doped gate spacer into a first region of the fin to provide a first carbon-doped region. The first carbon-doped region is disposed between at least a portion of the source/drain region and the channel region of the fin.
    Type: Grant
    Filed: October 29, 2018
    Date of Patent: September 8, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yu-Chang Lin, Chun-Feng Nieh, Huicheng Chang, Wei-Ting Chien, Chih-Pin Tsao, Hou-Ju Li, Tien-Shun Chang
  • Patent number: 10714586
    Abstract: A semiconductor device includes a source/drain region, a source/drain silicide layer formed on the source/drain region, and a first contact disposed over the source/drain silicide layer. The first contact includes a first metal layer, an upper surface of the first metal layer is at least covered by a silicide layer, and the silicide layer includes a same metal element as the first metal layer.
    Type: Grant
    Filed: July 30, 2018
    Date of Patent: July 14, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chia-Ming Hsu, Pei-Yu Chou, Chih-Pin Tsao, Kuang-Yuan Hsu, Jyh-Huei Chen
  • Publication number: 20200105533
    Abstract: A method includes removing a dummy gate to form a gate trench. A gate dielectric layer is deposited over a bottom and sidewalls of the gate trench. A first work function metal layer is deposited over the gate dielectric layer. A dummy layer is deposited over the first work function metal layer. An impurity is introduced into the dummy layer and the first work function metal layer after the dummy layer is deposited. The dummy layer is removed after the impurity is introduced into the dummy layer and the first work function metal layer. The gate trench is filled with a conductive material after the dummy layer is removed.
    Type: Application
    Filed: December 2, 2019
    Publication date: April 2, 2020
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yen-Yu CHEN, Yu-Chi LU, Chih-Pin TSAO, Shih-Hsun CHANG
  • Publication number: 20200091146
    Abstract: A FinFET device structure is provided. The FinFET device structure includes a fin structure formed over a substrate, and the substrate includes a first region and a second region. A gate structure is formed over a fin structure and a first S/D structure has a first volume. A second S/D structure has a second volume, and the second volume is lower than the first volume. A first contact structure is formed over the first S/D structure and a first conductive via is formed over the first contact structure. A power line is formed over the first conductive via, and the power line is electrically connected to the first S/D structure by the first conductive via and the first contact structure.
    Type: Application
    Filed: September 5, 2019
    Publication date: March 19, 2020
    Inventors: Chih-Pin TSAO, Jeng-Ya YEH, Chia-Wei SOONG
  • Publication number: 20200027970
    Abstract: A FinFET and methods for forming a FinFET are disclosed. A method includes forming a semiconductor fin on a substrate, implanting the semiconductor fin with dopants, and forming a capping layer on a top surface and sidewalls of the semiconductor fin. The method further includes forming a dielectric on the capping layer, and forming a gate electrode on the dielectric.
    Type: Application
    Filed: September 13, 2019
    Publication date: January 23, 2020
    Inventors: Ming-Hua Yu, Chih-Pin Tsao, Hou-Yu Chen
  • Publication number: 20190371934
    Abstract: A method of forming a FinFET with a rounded source/drain profile comprises forming a fin in a substrate, etching a source/drain recess in the fin, forming a plurality of source/drain layers in the source/drain recess; and etching at least one of the plurality of source/drain layers. The source/drain layers may be a silicon germanium compound. Etching at the source/drain layers may comprises partially etching each of the plurality of source/drain layers prior to forming subsequent layers of the plurality of source/drain layers. The source/drain layers may be formed with a thickness at a top corner of about 15 nm, and the source/drain layers may each be etched back by about 3 nm prior to forming subsequent layers of the plurality of source/drain layers. Forming the plurality of source/drain layers optionally comprises forming at least five source/drain layers.
    Type: Application
    Filed: August 19, 2019
    Publication date: December 5, 2019
    Inventors: Ming-Hua Yu, Chih-Pin Tsao, Pei-Ren Jeng, Tze-Liang Lee
  • Patent number: 10497571
    Abstract: A method is provided. The method includes the following operations. A dielectric layer is deposited over a substrate. Then, a first work function metal layer is deposited over the dielectric layer. Next, a dummy layer is deposited over the first work function metal layer. Afterwards, an impurity is introduced into the first work function metal layer. Then, the dummy layer is etched. Next, a second work function metal layer is deposited over the first work function metal layer.
    Type: Grant
    Filed: April 27, 2018
    Date of Patent: December 3, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yen-Yu Chen, Yu-Chi Lu, Chih-Pin Tsao, Shih-Hsun Chang
  • Publication number: 20190333769
    Abstract: A method is provided. The method includes the following operations. A dielectric layer is deposited over a substrate. Then, a first work function metal layer is deposited over the dielectric layer. Next, a dummy layer is deposited over the first work function metal layer. Afterwards, an impurity is introduced into the first work function metal layer. Then, the dummy layer is etched. Next, a second work function metal layer is deposited over the first work function metal layer.
    Type: Application
    Filed: April 27, 2018
    Publication date: October 31, 2019
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yen-Yu CHEN, Yu-Chi LU, Chih-Pin TSAO, Shih-Hsun CHANG
  • Patent number: 10388792
    Abstract: A method of forming a FinFET with a rounded source/drain profile comprises forming a fin in a substrate, etching a source/drain recess in the fin, forming a plurality of source/drain layers in the source/drain recess; and etching at least one of the plurality of source/drain layers. The source/drain layers may be a silicon germanium compound. Etching at the source/drain layers may comprises partially etching each of the plurality of source/drain layers prior to forming subsequent layers of the plurality of source/drain layers. The source/drain layers may be formed with a thickness at a top corner of about 15 nm, and the source/drain layers may each be etched back by about 3 nm prior to forming subsequent layers of the plurality of source/drain layers. Forming the plurality of source/drain layers optionally comprises forming at least five source/drain layers.
    Type: Grant
    Filed: November 27, 2017
    Date of Patent: August 20, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ming-Hua Yu, Chih-Pin Tsao, Pei-Ren Jeng, Tze-Liang Lee
  • Patent number: 10276568
    Abstract: In a method for manufacturing a semiconductor device, a doped layer doped with a first dopant is formed in a substrate. A semiconductor layer is formed on the doped layer. A fin structure is formed by patterning at least the semiconductor layer and the doped layer such that the fin structure comprises a channel region including the semiconductor layer, and a well region including the doped layer. An isolation insulating layer is formed such that the channel region of the fin structure protrudes from the isolation insulating layer and the well region of the fin structure is embedded in the isolation insulating layer. A gate structure is formed over a part of the fin structure and the isolation insulating layer. The semiconductor layer is at least one of a doped silicon layer or a non-doped silicon layer.
    Type: Grant
    Filed: February 27, 2018
    Date of Patent: April 30, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yu-Sheng Wu, Chen Hua Tsai, Hou-Yu Chen, Chia-Wei Soong, Chih-Pin Tsao
  • Patent number: 10262878
    Abstract: A method of forming a semiconductor device includes forming a fin over a substrate, forming a polysilicon gate structure over the fin, and replacing the polysilicon gate structure with a metal gate structure. Replacing of the polysilicon gate structure includes depositing a work function metal layer over the fin, performing a sublimation process on a non-fluorine based metal precursor to produce a gaseous non-fluorine based metal precursor, and depositing a substantially fluorine-free metal layer over the work function metal layer based on the gaseous non-fluorine based metal precursor. The substantially fluorine-free metal layer includes an amount of fluorine less than about 5 atomic percent.
    Type: Grant
    Filed: October 9, 2018
    Date of Patent: April 16, 2019
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Li-Jung Liu, Chih-Pin Tsao, Chia-Wei Soong, Jyh-Huei Chen, Shu-Hui Wang, Shih-Hsun Chang
  • Publication number: 20190067458
    Abstract: A finFET device and methods of forming a finFET device are provided. The method includes depositing a dummy gate over and along sidewalls of a fin extending upwards from a semiconductor substrate, forming a first gate spacer along a sidewall of the dummy gate, and plasma-doping the first gate spacer with carbon to form a carbon-doped gate spacer. The method further includes forming a source/drain region adjacent a channel region of the fin and diffusing carbon from the carbon-doped gate spacer into a first region of the fin to provide a first carbon-doped region. The first carbon-doped region is disposed between at least a portion of the source/drain region and the channel region of the fin.
    Type: Application
    Filed: October 29, 2018
    Publication date: February 28, 2019
    Inventors: Yu-Chang Lin, Chun-Feng Nieh, Huicheng Chang, Wei-Ting Chien, Chih-Pin Tsao, Hou-Ju Li, Tien-Shun Chang
  • Publication number: 20190051542
    Abstract: A method of forming a semiconductor device includes forming a fin over a substrate, forming a polysilicon gate structure over the fin, and replacing the polysilicon gate structure with a metal gate structure. Replacing of the polysilicon gate structure includes depositing a work function metal layer over the fin, performing a sublimation process on a non-fluorine based metal precursor to produce a gaseous non-fluorine based metal precursor, and depositing a substantially fluorine-free metal layer over the work function metal layer based on the gaseous non-fluorine based metal precursor. The substantially fluorine-free metal layer includes an amount of fluorine less than about 5 atomic percent.
    Type: Application
    Filed: October 9, 2018
    Publication date: February 14, 2019
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Li-Jung LIU, Chih-Pin Tsao, Chia-Wei Soong, Jyh-Huei Chen, Shu-Hui Wang, Shih-Hsun Chang
  • Patent number: 10163626
    Abstract: An NMOS transistor gate structure includes at least one spacer defining a gate region over a semiconductor substrate, a gate dielectric layer disposed on the gate region and lining an inner sidewall of the spacer, a bottom barrier layer conformally disposed on the gate dielectric layer, a work function metal layer disposed on the bottom barrier layer, and a filling metal partially wrapped by the work function metal layer. The bottom barrier layer has an oxygen concentration higher than a nitrogen concentration. The bottom barrier layer is in direct contact with the gate dielectric layer. The bottom barrier layer includes a material selected from Ta, TaN, TaTi, TaTiN and a combination thereof.
    Type: Grant
    Filed: December 12, 2016
    Date of Patent: December 25, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ming-Huei Lin, Yen-Yu Chen, Chih-Pin Tsao, Shih-Hsun Chang
  • Patent number: 10157844
    Abstract: A semiconductor device includes a semiconductor substrate having a fin structure. A gate structure is disposed over the fin structure. A first dielectric layer is disposed on the gate structure and the fin structure. A contact plug is disposed in the first dielectric layer and electrically connected to source/drain region in the fin structure. A second dielectric layer is disposed on the first dielectric layer. the second dielectric layer has a first nitride layer and a first etch stop layer, and the first nitride layer is disposed on the first etch stop layer. A via goes through the second dielectric layer and electrically connected to the contact plug. A metal layer is disposed on the second dielectric layer.
    Type: Grant
    Filed: October 12, 2017
    Date of Patent: December 18, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chih-Pin Tsao, Wei-Fang Chen
  • Patent number: 10153351
    Abstract: In a method of manufacturing a semiconductor device, a first contact hole is formed in one or more dielectric layers disposed over a source/drain region or a gate electrode. An adhesive layer is formed in the first contact hole. A first metal layer is formed on the adhesive layer in the first contact hole. A silicide layer is formed on an upper surface of the first metal layer. The silicide layer includes a same metal element as the first metal layer.
    Type: Grant
    Filed: December 14, 2016
    Date of Patent: December 11, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chia-Ming Hsu, Chih-Pin Tsao, Jyh-Huei Chen, Kuang-Yuan Hsu, Pei-Yu Chou