Abstract: A backside illuminated image sensor, including a semiconductor layer, a first gate structure, and a light sensing device, is provided. The semiconductor layer has a first surface and a second surface opposite to each other. The first gate structure is disposed on the second surface. The light sensing device is located in the semiconductor layer. The light sensing device extends from the first surface to the second surface.

Abstract: An image sensor includes a substrate, a global shutter component, a ground doped region, and a light-shielding layer. The substrate at least has a pixel array region and a border region adjacent to each other. The global shutter component is located on the pixel array region, and the global shutter component includes a storage node. The ground doped region is located on the border region. The light-shielding layer is located on the pixel array region and the border region and is electrically connected to the ground doped region. The light-shielding layer includes a first light-shielding layer and a second light-shielding layer. The first light-shielding layer is located on the pixel array region and covers the storage node, and the second light-shielding layer is located on the border region and surrounds the global shutter component. A manufacturing method of an image sensor is also provided.

Abstract: Provided are an image sensor and a manufacturing method thereof. In the image sensor, an insulating layer and a first silicon layer are sequentially on a silicon base. A first isolation structure is in the first silicon layer to define an active area (AA). A doped region is in a part of the first silicon layer in the AA and in a part of the silicon base thereunder. A second silicon layer is in a part of the first silicon layer in the AA and extends into the silicon base. An interconnection structure is on the first silicon layer and electrically connected with a transistor. A second isolation structure is in the silicon base under the first isolation structure and connected to the insulating layer. A passivation layer surrounds the silicon base and is connected to the doped region. A microlens is on the silicon base.

Abstract: A backside illuminated image sensor, including a semiconductor layer, a first gate structure, and a light sensing device, is provided. The semiconductor layer has a first surface and a second surface opposite to each other. The first gate structure is disposed on the second surface. The light sensing device is located in the semiconductor layer. The light sensing device extends from the first surface to the second surface.

Abstract: A backside illuminated image sensor, including a semiconductor layer, a first gate structure, and a light sensing device, is provided. The semiconductor layer has a first surface and a second surface opposite to each other. The first gate structure is disposed on the second surface. The light sensing device is located in the semiconductor layer. The light sensing device extends from the first surface to the second surface.

Abstract: A back side illumination (BSI) image sensor includes an epitaxial substrate, a deep trench isolation (DTI) structure from one surface to the other surface of the epitaxial substrate, a buried oxide layer on the epitaxial substrate, an epitaxial layer, a well region, a floating diffusion (FD) region, a shallow trench isolation (STI) structure, and vertical transfer gates (VTGs). The buried oxide layer has openings exposing the epitaxial substrate, and the epitaxial layer is formed on the epitaxial substrate and covers the buried oxide layer. The well region is in the epitaxial layer and the epitaxial substrate. The FD region is in the well region above the buried oxide layer, and a width of the buried oxide layer is larger than that of the FD region. The STI structure is in the epitaxial layer. The VTGs are in the epitaxial layer and through the openings of the buried oxide layer.

Abstract: An electrical connector includes: an insulating body; and a first row of terminals and a second row of terminals housed in the insulating body, each terminal in the first row of terminals having a tail portion, a contact portion, and a body portion, the first row of terminals including a signal terminal pair having a pair of signal terminals and a ground terminal arranged on one side of the signal terminal pair, wherein a first center distance between the contact portions of the signal terminal pair is different from a second center distance between the contact portion of the ground terminal and the contact portion of an adjacent signal terminal.

Abstract: An image sensor structure including a substrate, a pixel structure, and a deep trench isolation (DTI) structure is provided. The substrate includes a first side and a second side opposite to each other. The pixel structure includes a transfer transistor, a light sensing device, and a floating diffusion region. The transfer transistor includes a first gate. The first gate is disposed on the first side of the substrate. The light sensing device is disposed in the substrate and is located on one side of the first gate. The floating diffusion region is disposed in the substrate and is located on another side of the first gate. The DTI structure extends into the substrate from the second side of the substrate. The top-view pattern of the floating diffusion region does not overlap the top-view pattern of the DTI structure.

Abstract: A 3D CMOS image sensor is provided in the present invention, including a semiconductor substrate, a photodiode and a well formed in the semiconductor substrate, a shallow trench isolation (STI) layer formed on a front surface of the semiconductor substrate, a fin protruding upwardly from the semiconductor substrate through the STI layer, wherein the fin is composed of the photodiode and the well, a first gate spanning the photodiode portion and the well portion abutting the photodiode portion of the fin to constitute a transfer transistor, a second gate spanning in the middle of the well portion of the fin to constitute a reset transistor, and a floating diffusion region in the well portion of the fin between the first gate and the second gate electrically connecting the transfer transistor and the reset transistor.

Abstract: Provided are an image sensor and a manufacturing method thereof. In the image sensor, an insulating layer and a first silicon layer are sequentially on a silicon base. A first isolation structure is in the first silicon layer to define an active area (AA). A doped region is in a part of the first silicon layer in the AA and in a part of the silicon base thereunder. A second silicon layer is in a part of the first silicon layer in the AA and extends into the silicon base. An interconnection structure is on the first silicon layer and electrically connected with a transistor. A second isolation structure is in the silicon base under the first isolation structure and connected to the insulating layer. A passivation layer surrounds the silicon base and is connected to the doped region. A microlens is on the silicon base.

Abstract: A backside illuminated image sensor, including a semiconductor layer, a first gate structure, and a light sensing device, is provided. The semiconductor layer has a first surface and a second surface opposite to each other. The first gate structure is disposed on the second surface. The light sensing device is located in the semiconductor layer. The light sensing device extends from the first surface to the second surface.

Abstract: An electrical connector includes an insulating body, a first terminal group having a signal terminal pair and a ground terminal arranged on one side of the signal terminal pair, each signal terminal having a tail portion, a contact portion, and a body portion, the body portion having a covering portion and a free portion exposed to air, wherein there is a first center distance between the contact portions of the signal terminal pair, there is a second center distance between the free portions, and there is a third center distance between the covering parts, and a second terminal group forming a first mating port with the first terminal group, wherein the second center distance is smaller than the first center distance, and the third center distance is greater than the second center distance.

Abstract: An electrical connector assembly comprising: an insulative housing with a front mating slot and a rear receiving cavity; a combo contact module assembly received within the receiving cavity and including a sideband contact module sandwiched between a pair of high speed contact modules; each high speed contact module including an upper unit and a lower unit assembled with each other in a vertical direction; the upper unit and the lower unit being essentially symmetrically arranged with each other in the vertical direction with a half of pitch offset in a transverse direction; and a metallic shell; wherein each of the upper unit and the lower unit including a front subunit and a rear subunit stacked with each other in the vertical direction and retained together.

Abstract: An electrical connector includes: an insulating body; and a first row of terminals and a second row of terminals housed in the insulating body, each terminal in the first row of terminals having a tail portion, a contact portion, and a body portion, the first row of terminals including a signal terminal pair having a pair of signal terminals and a ground terminal arranged on one side of the signal terminal pair, wherein a first center distance between the contact portions of the signal terminal pair is different from a second center distance between the contact portion of the ground terminal and the contact portion of an adjacent signal terminal.

Abstract: An electrical connector assembly comprising: an insulative housing with a front mating slot and a rear receiving cavity; a combo contact module assembly received within the receiving cavity and including a sideband contact module sandwiched between a pair of high speed contact modules; each high speed contact module including an upper unit and a lower unit assembled with each other in a vertical direction; the upper unit and the lower unit being essentially symmetrically arranged with each other in the vertical direction with a half of pitch offset in a transverse direction; and a metallic shell; wherein each of the upper unit and the lower unit including a front subunit and a rear subunit stacked with each other in the vertical direction and retained together.

Abstract: An electrical connector includes an insulating body, a first terminal group having a signal terminal pair and a ground terminal arranged on one side of the signal terminal pair, each signal terminal having a tail portion, a contact portion, and a body portion, the body portion having a covering portion and a free portion exposed to air, wherein there is a first center distance between the contact portions of the signal terminal pair, there is a second center distance between the free portions, and there is a third center distance between the covering parts, and a second terminal group forming a first mating port with the first terminal group, wherein the second center distance is smaller than the first center distance, and the third center distance is greater than the second center distance.

Abstract: An image sensor includes a semiconductor substrate, a photodiode formed in the semiconductor substrate, a microlens disposed over the photodiode, a first transfer transistor, a second transfer transistor and a capacitor. The first transfer transistor and the second transfer transistor are formed on the semiconductor substrate, and a memory node is formed in the semiconductor substrate between the first transfer transistor and the second transfer transistor, wherein the first transfer transistor is coupled to the photodiode. The capacitor is formed between the first transfer transistor and the second transfer transistor, and the capacitor includes a first electrode coupled to the memory node, a second electrode on the first electrode and extending to an edge of the photodiode, and a dielectric layer between the first and the second electrodes.

Abstract: An image sensor includes a semiconductor substrate, a photodiode formed in the semiconductor substrate, a microlens disposed over the photodiode, a first transfer transistor, a second transfer transistor and a capacitor. The first transfer transistor and the second transfer transistor are formed on the semiconductor substrate, and a memory node is formed in the semiconductor substrate between the first transfer transistor and the second transfer transistor, wherein the first transfer transistor is coupled to the photodiode. The capacitor is formed between the first transfer transistor and the second transfer transistor, and the capacitor includes a first electrode coupled to the memory node, a second electrode on the first electrode and extending to an edge of the photodiode, and a dielectric layer between the first and the second electrodes.

Abstract: A connector structure includes an upper connecting component, a lower connecting component, a shielding plate, a metal housing, an upper insulating component, an upper grounding component, a lower insulating component and a lower grounding component. The upper/lower connecting component includes an upper/lower main body and a plurality of upper/lower terminals. The shielding plate is disposed between the upper connecting component and the lower connecting component. The metal housing covers the upper main body, the shielding plate and the lower main body and covers the plurality of upper/lower terminals to form a docking space. A docking opening is formed on a side of the docking space, and the metal housing includes a stopping portion disposed around the docking opening. The upper/lower insulating component is disposed in the docking space and restrained between the stopping portion and the upper/lower main body. The upper/lower grounding component is disposed on the upper/lower insulating component.

Abstract: A connector structure includes an upper connecting component, a lower connecting component, a shielding plate, a metal housing, an upper insulating component, an upper grounding component, a lower insulating component and a lower grounding component. The upper/lower connecting component includes an upper/lower main body and a plurality of upper/lower terminals. The shielding plate is disposed between the upper connecting component and the lower connecting component. The metal housing covers the upper main body, the shielding plate and the lower main body and covers the plurality of upper/lower terminals to form a docking space. A docking opening is formed on a side of the docking space, and the metal housing includes a stopping portion disposed around the docking opening. The upper/lower insulating component is disposed in the docking space and restrained between the stopping portion and the upper/lower main body. The upper/lower grounding component is disposed on the upper/lower insulating component.